Afin de réduire la consommation de puissance des futures générations de systèmesélectroniques, une solution est d’intégrer de la non-volatilité au sein même des cellulesmémoires. Dans cette optique, l’utilisation du retournement de l’aimantation d’un matériauferromagnétique comme support de l’information a été utilisée initialement dans un conceptde mémoire, la MRAM. La dernière évolution de cette technologie, la SOT-RAM, utilise desphénomènes nouveaux appelés SOTs afin de contrôler la direction de l’aimantation. Parrapport aux générations précédentes (STT-MRAM notamment), elle devrait permettred’améliorer la vitesse d’écriture en conservant une endurance adaptée pour des utilisations enmémoires cache où en mémoire centrale. Le terme SOTs est une dénomination généraledésignant l’ensemble des effets, encore mal connus, liés au couplage spin-orbite et permettantle retournement de l’aimantation d’une cellule mémoire.Ce travail de thèse a eu pour objectif d’étudier les SOTs via un système expérimental demesure quasi-statique basé sur les effets Hall extraordinaires et planaires. Sonimplémentation et la méthode d’analyse associée, ainsi que les considérations théoriquesnécessaires à l’interprétation des résultats sont détaillées dans ce manuscrit. Il a été montréque le retournement de l’aimantation dans des systèmes à aimantation perpendiculaire à basede cobalt-platine ne peut être expliqué par les modèles simples considérés jusqu’à présentdans la littérature. En effet, il a été mis en évidence qu’au moins deux effets simultanés doiventêtre pris en compte pour expliquer les phénomènes observés. Par ailleurs, ceux-ci présententune sensibilité différente à la fois à une altération de la structure cristalline et à une variationde température. / In order to reduce power consumption in next generations’ electronic devices, one potentialsolution is to implement non-volatility in memory cells. In this goal, the magnetizationswitching of a ferromagnetic material has been used in a memory concept: the MRAM. Thelatest development of this technology, called SOT-RAM, is based on new phenomena calledSOTs (Spin-Orbit Torques) in order to control magnetization direction. Contrary to precedentgenerations (STT-MRAM), it should achieve a higher operating speed and an enduranceadapted for cache and main memories applications. SOTs is a generic term referring to all theeffects, linked to the spin-orbit interaction, and that enable magnetization reversal. They areyet not perfectly understood.The main objective of this Ph.D. was then to study these SOTs through a quasi-staticexperimental measurement setup based on anomalous and planar Hall effects. Itsimplementation and the associated analysis method, as well as the required theoreticalconsiderations for data interpretation are detailed in this manuscript. It has been highlightedthat magnetization switching in perpendicularly magnetization cobalt-platinum systemscannot be explained by the simple models considered thus far in the literature. As a matter offact it has been evidenced that at least two effects have to be considered in order to explainobserved phenomena. In addition, they present different susceptibility both to a modificationof the crystal structure and to a temperature change.

Asymmetrically sandwiched ferromagnetic thin films display a large number of spin-orbit effects, including the Dzyaloschinsii-Moriya interaction (DMI), spin-orbit torques (SOT) and magnetoresistance (MR) effects. Their concurrence promises the implementation of interesting magnetic structures like skyrmions in future memory and logic devices. The complex interplay of various effects originating from the spin-orbit coupling and their dependencies on the microstructural details of the material system mandates a holistic characterization of its properties. In this PhD thesis, a comprehensive study of the spin-orbit effects in a chromium oxide/cobalt/platinum trilayer sample series is presented. The determination of the complete micromagnetic parameter set is based on a developed measurement routine that utilizes quasistatic methods. The unambiguous quantification of all relevant constants is crucial for the modeling of the details of magnetic structures in the system. In this context the necessity of a strict distinction of magnetic objects, that are stabilized by magnetostatics or the DMI, was revealed. Furthermore, a sample layout was developed to allow for the simultaneous quantification of the magnitudes of SOTs and MR effects from nonlinear magnetotransport measurements. In conjunction with a structural characterization, the dominating dependence of the effect magnitudes on microstructural details of the systems is concluded. Precisely characterized systems establish a solid groundwork for further investigations that are needed for viable skyrmion-based devices.

Asymmetrically sandwiched ferromagnetic thin films display a large number of spin-orbit effects, including the Dzyaloschinsii-Moriya interaction (DMI), spin-orbit torques (SOT) and magnetoresistance (MR) effects. Their concurrence promises the implementation of interesting magnetic structures like skyrmions in future memory and logic devices. The complex interplay of various effects originating from the spin-orbit coupling and their dependencies on the microstructural details of the material system mandates a holistic characterization of its properties. In this PhD thesis, a comprehensive study of the spin-orbit effects in a chromium oxide/cobalt/platinum trilayer sample series is presented. The determination of the complete micromagnetic parameter set is based on a developed measurement routine that utilizes quasistatic methods. The unambiguous quantification of all relevant constants is crucial for the modeling of the details of magnetic structures in the system. In this context the necessity of a strict distinction of magnetic objects, that are stabilized by magnetostatics or the DMI, was revealed. Furthermore, a sample layout was developed to allow for the simultaneous quantification of the magnitudes of SOTs and MR effects from nonlinear magnetotransport measurements. In conjunction with a structural characterization, the dominating dependence of the effect magnitudes on microstructural details of the systems is concluded. Precisely characterized systems establish a solid groundwork for further investigations that are needed for viable skyrmion-based devices.:1 Introduction 2 Fundamentals 2.1 Towards new devices 2.2 Spin-orbit effects 2.2.1 Spin-current sources 2.2.2 Magnetoresistanceeffects 2.2.3 Spin-orbit torques 2.2.4 Harmonic analysis 2.3 Micromagnetic model 2.3.1 Dzyaloshinskii-Moriya interaction (DMI) 2.3.2 Consequences of the DMI for magnetic structures 2.3.3 Interface-induced DMI in asymmetrically stacked ferromagnets 2.3.4 Quantification of the interface-induced DMI 2.3.5 Levy-Fert three-site model including roughness 3 The CrOx/Co/Pt sample system 3.1 Experimental techniques 3.2 Structural characterization 4 Complete micromagnetic characterization 4.1 Magnetometry 4.1.1 Static investigation 4.1.2 Ferromagnetic resonance 4.2 DMI quantification 4.2.1 Field-driven domain wall creep motion 4.2.2 Asymmetric domain growth 4.2.3 Winding pair stability 4.3 Determination of the exchange parameter 4.3.1 Generation of circular magnetic objects 4.3.2 Homochiral magnetic bubble domains 4.4 Results 5 Magnetotransport measurements 5.1 Measurement setup 5.2 Magnetoresistance effects 5.3 Spin-orbit torque quantification 5.4 Results 6 Discussion 6.1 Structural predomination of the DMI strength 6.2 Ultra-thin limit exchange parameter reduction 6.3 Magnetotransport properties 6.4 Magneticstructures in //CrOx/Co/Pttrilayers 7 Conclusion and Outlook A Appendix A.1 Calculation of the skyrmion diameter A.2 Micromagnetic simulation of the winding pair stability Bibliography Acknowledgements