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京都大学 / 新制・課程博士 / 博士(理学) / 甲第23696号 / 理博第4786号 / 新制||理||1685(附属図書館) / 京都大学大学院理学研究科物理学・宇宙物理学専攻 / (主査)教授 松田 祐司, 教授 柳瀬 陽一, 教授 石田 憲二 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DFAM

We present studies of edge states induced by the Aharonov-Casher vector potential or Rashba-type spin-orbit interaction using quantum transport in InGaAs/InAlAs herterostructures. The Aharonov-Casher effect is electromagnetically dual to the Aharonov-Bohm effect and is predicted to lead to edge states in a parabolic confinement at two-dimensional sample edges. As a narrow gap material, InGaAs has a low effective mass, high mobility, and strong spin-orbit interaction, which indicate that it can be used as a good material to detect the Aharonov-Casher effect or SOI interaction. Using InGaAs, we measured the magnetoresistance in a quantum antidot in narrow short channels in a tilted magnetic field. The fine structure (mT spacing) observed in the magnetoresistance indicate a probable energy spacing between AC edge states. We also fabricated side-gate channel structures in InGaAs/InAlAs quantum wells and investigated the values of the Rashba spin-orbit coupling constant α using the weak antilocalization analysis as a function of the side-gate voltage. We take the effect of the finite width into account and find the corrected values. With the simulation of electric fields in the wide channel and narrow channel, we found that the electric field components can be changed using side-gate voltages. While our results do not indicate which electric field component is responsible, the data indicate that the deduced spin-orbit strength values in a narrow channel are tunable by the side-gate voltage. / Ph. D.

In this thesis a reduced dimensionality quantum scattering model is applied to the study of polyatomic reactions of type X + CH4 <--> XH + CH3. Two dimensional quantum scattering of the symmetric hydrogen exchange reaction CH3+CH4 <--> CH4+CH3 is performed on an 18-parameter double-Morse analytical function derived from ab initio calculations at the CCSD(T)/cc-pVTZ//MP2/cc-pVTZ level of theory. Spectator mode motion is approximately treated via inclusion of curvilinear or rectilinear projected zero-point energies in the potential surface. The close-coupled equations are solved using R-matrix propagation. The state-to-state probabilities and integral and differential cross sections show the reaction to be primarily vibrationally adiabatic and backwards scattered. Quantum properties such as heavy-light-heavy oscillating reactivity and resonance features significantly influence the reaction dynamics. Deuterium substitution at the primary site is the dominant kinetic isotope effect. Thermal rate constants are in excellent agreement with experiment. The method is also applied to the study of electronically nonadiabatic transitions in the CH3 + HCl <--> CH4 + Cl(2PJ) reaction. Electrovibrational basis sets are used to construct the close-coupled equations, which are solved via Rmatrix propagation using a system of three potential energy surfaces coupled by spin-orbit interaction. Ground and excited electronic surfaces are developed using a 29-parameter double-Morse function with ab initio data at the CCSD(T)/ccpV( Q+d)Z-dk//MP2/cc-pV(T+d)Z-dk level of theory, and with basis set extrapolated data, both corrected via curvilinear projected spectator zero-point energies. Coupling surfaces are developed by fitting MCSCF/cc-pV(T+d)Z-dk ab initio spin orbit constants to 8-parameter functions. Scattering calculations are performed for the ground adiabatic and coupled surface models, and reaction probabilities, thermal rate constants and integral and differential cross sections are presented. Thermal rate constants on the basis set extrapolated surface are in excellent agreement with experiment. Characterisation of electronically nonadiabatic nonreactive and reactive transitions indicate the close correlation between vibrational excitation and nonadiabatic transition. A model for comparing the nonadiabatic cross section branching ratio to experiment is discussed.

The effect of spin-orbit coupling had once been thought to be a minor perturbation to the low energy band structure that could be ignored. Instead, a surge in recent theoretical and experimental efforts have shown spin-orbit interactions to have significant consequences. The main objective of this thesis is to investigate the role of the orbital sector and crystal symmetries in governing the spin texture in materials that have strong spin- orbit interactions. This can be accessed through a combination of spin- and angle-resolved photoemission spectroscopy (ARPES and spin-ARPES), both of which are powerful techniques for probing the one-electron band structure plus interactions, and supported by density functional theory calculations (DFT). We focus first on a globally inversion asymmetric material, the layered semiconductor BiTeI, which hosts a giant spin-splitting of its bulk bands. We show that these spin-split bands develop a previously undiscovered, momentum-space ordering of the atomic orbitals. We demonstrate this orbital texture to be atomic element specific by exploiting resonant enhancements in ARPES. These orbital textures drive a hierarchy of spin textures that are then tied to the constituent atomic layers. This opens routes to controlling the spin-splitting through manipulation of the atomic orbitals. This is contrasted against a material where inversion symmetry is globally upheld but locally broken within each monolayer of a two layer unit cell. Through our ARPES and spin-ARPES measurements of 2H-NbSe2, we discover the first experimental evidence for a strong out-of-plane spin polarisation that persists up to the Fermi surface in this globally inversion sym- metric material. This is found to be intrinsically linked to the orbital character and dimensionality of the underlying bands. So far, previous theories underpinning this (and related) materials' collective phases assume a spin- degenerate Fermi sea. We therefore expect this spin-polarisation to play a role in determining the underlying mechanism for the charge density wave phase and superconductivity. Through these studies, this thesis then develops the importance of global versus local inversion symmetry breaking and uncovers how this is intricately tied to the underlying atomic orbital configuration.

La dynamique des parois de domaine magnétiques (DW) soulève actuellement un très fort intérêt à la fois du point de vue fondamental mais aussi en lien avec ses applications dans des dispositifs logique et mémoire. Des dispositifs nouveaux basés sur les DW ont déjà été proposés, par exemple présentant des très fortes densités de stockage et des taux de transfert élevés pour un remplacement des disques durs. De plus dans les Mémoires Magnétiques à Accès Aléatoire (MRAM), identifiées comme l'une des solutions les plus prometteuses pour le remplacement des DRAM et SRAM, le retournement de l'aimantation implique une propagation des DW. Le contrôle de la dynamique des DW sous courant est longtemps resté un challenge, principalement à cause d'imperfections dans les matériaux utilisés. Des déplacements rapides et contrôlé des DW au moyen d'un courant ont été reportés il y a quelques années seulement dans des multicouches présentant une asymétrie d'inversion (SIA). Plus récemment un mécanisme a été proposé basé sur la présence de couple de spin orbite (SOT) et de l'interaction Dzyaloshinskii-Moriya (DMI), tout deux trouvant leur origine dans l'interaction spin-orbite et nécessitant une SIA.Mon objectif initial était de tester ce modèle dans deux systèmes présentant différents SIA. Dans des multicouches Pt/Co/Pt à faible SIA, j'ai étudié la propagation des DW sous courant et sous champ et j'ai mis en évidence l'existence d'un amortissement chiral. Ce phénomène nouveau, pendant de DMI pour les mécanismes dissipatifs, influence à la fois la dynamique sous courant et sous champ et doit être pris en compte pour avoir une description complète des mécanismes. Dans des multicouches Pt/Co/AlOx à fort SIA, j'ai étudié de nouvelles géométries pour lesquelles le mouvement de la paroi de domaine et la direction du courant ne sont pas colinéaires. J'ai mis en évidence un déplacement asymétrique des DW en fonction de cette non-colinéarité qui ne peut pas être expliquée avec un modèle simple DMI+SOT. En se basant sur ces résultats expérimentaux, j'ai introduit un nouveau concept de dispositifs, appelé « origami magnétique » : la forme du dispositif gouverne le mécanisme de retournement. Ce concept apporte une grande flexibilité dans la construction de mémoires magnétiques non volatiles, rapides et peu gourmandes en énergie : des fonctionnalités différentes peuvent être obtenues sur un même wafer simplement par la maîtrise de la forme des différents éléments. Je montre la preuve de concept de deux dispositifs. / Magnetic domain wall (DW) dynamics is currently attracting tremendous interest both from a fundamental point of view as well as in relation with emerging magnetic memory and logic devices. New DW-based devices were recently proposed, for example to replace hard drive disks with higher density and faster date transfer. Moreover, in Magnetic Random Access Memory (MRAM), identified as one of the most promising candidate for DRAM and SRAM replacement, switching occurs through DW propagation. Control of current induced DW dynamics has long been a challenge mainly due to material imperfections. Only some years ago, fast and controllable motions were reported in multilayers presenting structural inversion asymmetry (SIA). More recently, a mechanism was proposed based on the presence of spin orbit torques and Dzyaloshinskii-Moriya interaction (DMI), both phenomena originating from the spin orbit interaction and needing (SIA).My initial objective was to test this model in two systems presenting different SIA. In Pt/Co/Pt multilayers with weak SIA, I studied both current and field induced DW motion and evidenced a chiral damping. This new phenomena, counterpart of the DMI for the dissipative aspects, influences both current and field induced dynamics and has to be taken into account for a complete picture of the mechanism. In Pt/Co/AlOx multilayers with strong SIA, I studied new geometries where the DW motion the and current flow are not collinear. I evidenced asymmetric DW motion as a function of this non-collinearity that cannot be explained with a simple SOT+DMI model. Based on these experimental results I introduce a new device concept named “magnetic origami”: the shape of the device governs the switching mechanism. This concept provides large flexibility to construct fast, low power non-volatile magnetic memory: different functionalities can be achieved on a wafer by simply mastering the shape of the different elements. I show the proof of concept of two such devices.