Résumé : Au cours de cette thèse nous nous sommes intéressés à différentes propriétés de transport électrique, thermique et thermoélectrique. En particulier, nous avons mis en évidence les effets Righi-Leduc anomal et planaire qui sont les équivalents thermiques des effets Hall anomal et planaire. Ces effets doivent impérativement être considérés dans l’interprétation des mesures d’effet Seebeck de Spin.Nous avons mis à profit les techniques développées dans le cadre de cette étude pour étudier l’effet Nernst dans InSb. Nous avons utilsé un modèle de distribution de porteur pour expliquer les non-linéarités de celui-ci à des champs magnétiques proches de 1T.Nous avons construit une expérience de résonance ferromagnétique dont le but sera d’étudier les implications des effets thermique et thermoélectrique dans les expérience de pompage de spin. Enfin, nous nous sommes intéréssés au transport électrique en géométrie Corbino. La géométrie Corbino est celle d’un disque dans laquelle il n’existe aucun bord libre ou des charges peuvent s’accumuler. Cela se traduit par l’apparition d’un courant de Hall ortho-radial dont la conséquence est l’augmentation de la résistance du disque. Nous avons mis en évidence une augmentation de résistance en géométrie Corbino dans CoGd et CoTb dont l’origine est l’effet Hall anomale. Bien que cet effet ne soit pas dissipatif, il a donné naissance à un courant dissipatif transverse. Nous avons également vu que cet effet entre en compétition avec la magnétorésistance anisotrope dans le permalloy.Du fait de la similitude entre l’effet Hall anomal et l’effet Hall de spin, on s’attend dans le platine à l’existence d’un fort courant de spin orthoradial sans possibilités d’accumulations dont la mise en évidence expérimentale fera l’objet de travaux futurs. / Abstract: During this PhD we studied different electric, thermal and thermoelectric properties. For instance, we characterized the anomalous and planar Righi-Leduc effects which are the thermal equivalent of the anomalous and planar Hall effects. These effect have to be taken into account when interpreting spin Seebeck measurements.We used the technics that we developped during this study to look at the Nernst effect in InSb. We developped, a carrier mobility distribution model to explain its non-linearity at fields around 1T.We built a ferromagnetic resonance experiment in order to study the impact of thermal and thermoelectric properties in spin pumping effect.Lastly, we studied electric transport in the Corbino geometry. Corbino geometry is the one of a disc where there are no free boundaries where electric charges can accumulate. This causes the apparition of an orthoradial Hall current which consequence is the increase of resistance of the disc. We showed an increase of resistance in the Corbino geometry in CoGd and CoTb originating from anomalous Hall effect. Despite the anomalous Hall effect does not dissipate, it produces an orthoradial current which dissipates. We also found in permalloy that this increase of resistance is counterbalanced by a decrease of resistance due to the anisotropic magnetoresistance.The similarity between anomalous Hall effect and spin Hall effect which share a common microscopic origin implies that we expect in platinum the apparition of an orthoradial spin current without possibility for the charges to accumulateition. This current should dissipate just the way it does for the anomalous Hall effect.The study of this spin current will be the topic of a futur study.

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As CMOS technology scaling is fast approaching its fundamental limits, several new nano-electronic devices have been proposed as possible alternatives to MOSFETs. Research on emerging devices mainly focusses on improving the intrinsic characteristics of these single devices keeping the overall integration approach fairly conventional. However, due to high logic complexity and wiring requirements, the overall system-level power, performance and area do not scale proportional to that of individual devices. Thereby, we propose a fundamental shift in mindset, to make the devices themselves more functional than simple switches. Our goal in this thesis is to develop a new nanoscale fabric paradigm that enables realization of arbitrary logic functions (with high fan-in/fan-out) more efficiently. We leverage on non-equilibrium spin wave physical phenomenon and wave interference to realize these elementary functions called Spin Wave Functions (SPWFs). In the proposed fabric, computation is based on the principle of wave superposition. Information is encoded both in the phase and amplitude of spin waves; thereby providing an opportunity for compressed data representation. Moreover, spin wave propagation does not involve any physical movement of charge particles. This provides a fundamental advantage over conventional charge based electronics and opens new horizons for novel nano-scale architectures. We show several variants of the SPWFs based on topology, signal weights, control inputs and wave frequencies. SPWF based designs of arithmetic circuits like adders and parallel counters are presented. Our efforts towards developing new architectures using SPWFs places strong emphasis on integrated fabric-circuit exploration methodology. With different topologies and circuit styles we have explored how capabilities at individual fabric components level can affect design and vice versa. Our estimates on benefits vs. 45nm CMOS implementation show that, for a 1-bit adder, up to 40x reduction in area and 228x reduction in power is possible. For the 2-bit adder, results show that up to 33x area reduction and 222x reduction in power may be possible. Building large scale SPWF-based systems, requires mechanisms for synchronization and data streaming. In this thesis, we present data streaming approaches based on Asynchronous SPWFs (A-SPWFs). As an example, a 32-bit Carry Completion Sensing Adder (CCSA) is shown based on the A-SPWF approach with preliminary power, performance and area evaluations.

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<p>Some molecular complexes exhibiting bistability between two different spin states have been subject to vast investigations. Spin crossover and valence tautomerism interconversion molecular compounds are such examples showing this dynamic switching behavior and are a route toward designing molecular devices with a facile readout due to the change in the spin state that accompanies the change in conductance. Due to their extensive potential applications in industry and research, they are among the most interesting topics in spintronics. Spin state switching processes provide the foundation for applications in molecule-based devices. The main goal is to study the parameters that affect the intramolecular electron transfer between different spin states in spin crossover molecular thin films and the electron transfer between the metal center and redox-active ligands in valence tautomer thin films. </p> <p>Because substrate effects are important for any molecular-based device, there are increasing efforts to study the influence of the substrate on spin state transition. While some non-metallic substrates like graphite seem to be promising from experimental measurements, theoretical and experimental studies indicate that 2D semiconductor surfaces will have minimum interaction with spin crossover molecules.</p> <p>In this work, the functionality of two different spin crossover molecules sublimated on the ferroelectric Polyvinylidene Fluoride Hexafluoropropylene (PVDF-HFP) layer and 2D Ti3C2 MXene thin film is studied. We report the temperature-dependent spin state transition of spin crossover molecules, [Fe{H2B(pz)2}2 (bipy)], thin films, and valance tautomer [Co(sq)(cat)(3-tpp)2] thin films. Using a UV-Vis spectrometer and a specific lab-built sample holder we were able to perform the measurement at temperatures as low as 90 K and as high as 440 K. Temperature-dependent UV-Vis data show that the transition temperature from the high spin state to the low spin state and vice versa is well below the room temperature. However, for isothermal switching purposes, we designed and fabricated a bilayer device with PVDF-HFP thin films as the substrate to facilitate isothermal switching close to room temperature. The retention of voltage-controlled nonvolatile changes to the electronic structure in bilayers of PVDF-HFP/[Fe{H2B(pz)2}2(bipy)] and PVDF-HFP/[Co(sq)(cat)(3-tpp)2] strongly depends on the thickness of the PVDF-HFP layer. </p> <p>While the electric transport measurement revealed that doping the SCO layer with Ti3C2 MXene flakes can significantly improve the conductivity of the spin crossover molecular thin films, the temperature-dependent UV-Vis measurements represent that the adjacent MXene layer can cause a lock in the given spin state or a change in the transition temperature dramatically.</p> <p><br></p>

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