by Kwok-fung Kan = 低能量氬離子濺射於表面淸潔及高解像深度剖析時所產生的損傷及離子混合的硏究 / 簡國豐. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Kwok-fung Kan = Di neng liang ya li zi jian she yu biao mian qing jie ji gao jie xiang shen du pou xi shi suo chan sheng de sun shang ji li zi hun he de yan jiu / Jian Guofeng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- Background and Goals of the Thesis Work --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.1.1 --- Surface contamination of semiconductors --- p.1 / Chapter 1.1.2 --- Common surface cleaning methods --- p.2 / Chapter 1.1.3 --- Quality control in ultrathin gate dielectrics --- p.3 / Chapter 1.1.4 --- High-resolution depth profiling --- p.5 / Chapter 1.2 --- Energy range limitation in sputtering --- p.5 / Chapter 1.3 --- Goals of this thesis study --- p.6 / References for Chapter1 --- p.7 / Chapter Chapter 2 --- Theoretical Background and Instrumentation --- p.9 / Chapter 2.1 --- Ion Bombardment --- p.9 / Chapter 2.1.1 --- Bombardment mechanism --- p.9 / Chapter 2.1.2 --- Ion beam induced damage --- p.10 / Chapter 2.1.2.1 --- Region of damage --- p.10 / Chapter 2.1.2.2 --- Structural changes --- p.11 / Chapter 2.1.3 --- Assessment methods on ion beam damage and ion mixing --- p.12 / Chapter 2.1.3.1 --- Assessment methods on ion beam damage --- p.12 / Chapter 2.1.3.2 --- Assessment of ion mixing in the sample --- p.13 / Chapter 2.1.4 --- Minimizing the sputtered damage and ion mixing --- p.14 / Chapter 2.1.5 --- Ion gun --- p.15 / Chapter 2.1.5.1 --- Mechanism of the generation of an argon ion beam --- p.15 / Chapter 2.1.5.2 --- Description of ion gun --- p.16 / Chapter 2.1.5.3 --- Calibration of current density provided by the ion gun --- p.16 / Chapter 2.1.5.4 --- Sputtering time --- p.16 / Chapter 2.2 --- X-ray photoelectron spectroscopy(XPS) --- p.18 / Chapter 2.2.1 --- Principle of XPS --- p.18 / Chapter 2.2.1.1 --- Qualitative analysis of XPS --- p.18 / Chapter 2.2.1.2 --- Quantitative analysis of XPS --- p.20 / Chapter 2.2.2 --- Angle-resolved XPS --- p.24 / Chapter 2.2.3 --- Set-up --- p.25 / Chapter 2.2.3.1 --- UHV system --- p.27 / Chapter 2.2.3.2 --- X-ray source --- p.27 / Chapter 2.2.3.3 --- Electron energy analyser --- p.27 / Chapter 2.2.3.4 --- Detector --- p.28 / Chapter 2.2.4 --- Calibration of XPS --- p.28 / References for Chapter2 --- p.29 / Chapter Chapter 3 --- Damages induced by ion sputtering --- p.31 / Chapter 3.1 --- Introduction --- p.31 / Chapter 3.2 --- Experimental --- p.31 / Chapter 3.2.1 --- Sample preparation --- p.31 / Chapter a. --- Surface cleaning and oxidization --- p.31 / Chapter b. --- HF etching --- p.32 / Chapter c. --- Indium back contact --- p.32 / Chapter 3.2.2 --- XPS analysis --- p.33 / Chapter 3.2.2.1 --- Data acquisition --- p.33 / Chapter 3.2.2.2 --- Peak deconvolution --- p.33 / Chapter 3.2.3 --- Ion sputtering --- p.34 / Chapter 3.3 --- Results and discussion --- p.34 / Chapter 3.3.1 --- Spectral width of In3d and P2p peak --- p.34 / Chapter 3.3.2 --- Deconvolution of In3d signal at take-off angle of 90° --- p.37 / Chapter 3.3.2.1 --- In in bulk InP --- p.37 / Chapter 3.3.2.2 --- In metal --- p.37 / Chapter 3.3.2.3 --- In in damaged InP region --- p.37 / Chapter 3.3.3 --- Deconvolution of P2p signal at take off angle of 45° --- p.37 / Chapter 3.3.3.1 --- P in bulk InP --- p.37 / Chapter 3.3.3.2 --- P in damaged InP region --- p.37 / Chapter 3.3.4 --- Relative composition of deconvoluted components --- p.38 / Chapter 3.3.5 --- Fermi level shift --- p.39 / Chapter 3.3.6 --- Analysis at take-off angle of 45° --- p.40 / Chapter 3.3.7 --- Stoichiometry in sputtered InP --- p.43 / Chapter 3.4 --- Conclusions --- p.45 / References for Chapter3 --- p.46 / Chapter Chapter 4 --- Ion mixing in sputtered depth profiling --- p.47 / Chapter 4.1 --- Introduction --- p.47 / Chapter 4.2 --- Experimental --- p.47 / Chapter 4.2.1 --- Sample description --- p.47 / Chapter 4.2.2 --- Acquisition conditions --- p.47 / Chapter 4.2.3 --- Raw data --- p.48 / Chapter 4.2.4 --- Data treatments --- p.48 / Chapter 4.2.4.1 --- Depth calibration --- p.48 / Chapter 4.2.4.2 --- Calibration procedure --- p.55 / Chapter A. --- Overlayer region --- p.55 / Chapter B. --- Substrate region --- p.56 / Chapter 4.3 --- Results and discussions --- p.57 / Chapter 4.3.1 --- Study of ion mixing using depth profile --- p.57 / Chapter A. --- Comparing the carbon profiles at two ion sputtering energies --- p.59 / Chapter B. --- Comparing the nitrogen profiles at two ion sputtering energies --- p.59 / Chapter C. --- Comparing the oxygen profiles at two ion sputtering energies --- p.59 / Chapter 4.3.2 --- Study of ion mixing from a change in sputtering rate --- p.60 / Chapter 4.3.3 --- Approximation on ion mixing --- p.64 / Chapter 4.3.4 --- Conclusions --- p.66 / References for Chapter4 --- p.67 / Chapter Chapter 5 --- Conclusions --- p.68

by Leung Kit Sum = 透過X光電子譜研究射頻濺射之銅復合物石英 / 梁潔心. / Thesis submitted in: August 2002. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2003. / Includes bibliographical references (leaves 77-78). / Text in English; abstracts in English and Chinese. / by Leung Kit Sum = Tou guo X guang dian zi pu yan jiu she pin jian she zhi tong fu he wu shi ying / Liang Jiexin. / Abstract --- p.i / 論文摘要 --- p.iii / Acknowledgement --- p.iv / Table of Content --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter CHAPTER 1 --- INTRODUCTION / Chapter 1.1 --- Nanoparticles and Nanophase Materials --- p.1 / Chapter 1.2 --- Nonlinear Optical Phenomena and Their Physical Origin --- p.4 / Chapter 1.2.1 --- Dielectric Confinement --- p.6 / Chapter 1.2.2 --- Quantum Confinement --- p.8 / Chapter 1.2.2.1 --- Intraband Transition --- p.9 / Chapter 1.2.2.2 --- Interband Transition --- p.9 / Chapter 1.2.2.3 --- Hot-electron Transition --- p.11 / Chapter 1.3 --- Importance of Optical Nonlinearity --- p.11 / Chapter 1.3.1 --- Self-Phase Modulation --- p.11 / Chapter 1.3.2 --- Self-Focusing/Defocusing --- p.12 / Chapter 1.4 --- Sample Preparation --- p.12 / Chapter 1.4.1 --- Sputtering --- p.13 / Chapter 1.5 --- Characterization of Nanocomposites --- p.15 / Chapter 1.6 --- Aim of the Project --- p.15 / References --- p.17 / Chapter CHAPTER 2 --- INSTRUMENTATION / Chapter 2.1 --- Introduction --- p.20 / Chapter 2.2 --- Sputter Deposition --- p.20 / Chapter 2.2.1 --- Glow Discharge --- p.21 / Chapter 2.2.2 --- Radio-Frequency Sputtering (RF Sputtering) --- p.24 / Chapter 2.2.3 --- Magnetically Enhanced Sputtering --- p.24 / Chapter 2.2.4 --- Instrumentation --- p.25 / Chapter 2.2.4.1 --- Target Assemblies --- p.27 / Chapter 2.2.4.2 --- Shutter --- p.28 / Chapter 2.2.4.3 --- Substrate Holder --- p.28 / Chapter 2.2.4.4 --- Power Supply --- p.28 / Chapter 2.2.5 --- Experimental --- p.29 / Chapter 2.3 --- X-ray Photoelectron Spectroscopy (XPS) --- p.29 / Chapter 2.3.1 --- Instrumentation --- p.31 / Chapter 2.3.2 --- Application to metal nanoclusters composite glass --- p.33 / Chapter 2.3.2.1 --- Compositional Analysis --- p.33 / Chapter 2.3.2.2 --- Depth Profiling --- p.33 / Chapter 2.3.3.3 --- Auger Parameters --- p.33 / Chapter 2.4 --- Transmission Electron Microscopy (TEM) --- p.34 / Chapter 2.4.1 --- Sample Preparation --- p.35 / Chapter 2.4.1.1 --- Sample Thickness Determination --- p.35 / Chapter 2.4.1.2 --- Ion Milling --- p.36 / Chapter 2.4.2 --- Instrumentation --- p.36 / Chapter 2.4.3 --- Contrast and Image Formation --- p.38 / Chapter 2.4.3.1 --- Bright and Dark Field Image --- p.38 / Chapter 2.4.3.2 --- Mass and Thickness Contrast --- p.40 / Chapter 2.4.3.3 --- Diffraction Contrast --- p.40 / References --- p.42 / Chapter CHAPTER 3 --- COMPOSITION AND NANUSTRUCTURE OF COPPER DOPED FUSED SILICA / Chapter 3.1 --- Introduction --- p.44 / Chapter 3.2 --- Experiment --- p.45 / Chapter 3.3 --- Results and Discussion --- p.47 / Chapter 3.3.1 --- Effect of Input RF Power on the Growth of Film --- p.47 / Chapter 3.3.2 --- Theoretical Calculation of Cluster Size by Ratio of Surface to Total Amount of Copper --- p.55 / Chapter 3.3.3 --- TEM Studies of Copper Nanoclusters --- p.57 / Chapter 3.3.4 --- Further Discussion: Effect of Current and Voltage on the Determination of Deposition Rate --- p.60 / Chapter 3.3.5 --- Atomic Distribution and Chemical State of Copper Nanocluster --- p.60 / Chapter 3.3.6 --- Effect of Pressure on the Growth of Film --- p.66 / Chapter 3.3.6.1 --- How Pressure Affects Cluster Growth --- p.70 / Chapter 3.3.7 --- Effect of Deposition time on the Growth of Film --- p.71 / Chapter 3.3.7.1 --- How Film thickness Affects Cluster Growth --- p.75 / Chapter 3.4 --- Summary --- p.75 / References --- p.77 / Chapter Chapter 4 --- CONCLUSION AND FUTURE DIRECTIONS / Chapter 4.1 --- Conclusion --- p.79 / Chapter 4.2 --- Future Directions --- p.79 / Chapter 4.2.1 --- Generation of Active Matrix Nanocomposite --- p.79

by Xianting Zeng. / Publication date from spine. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references (leaves 165-173). / ABSTRACT --- p.iii / ACKNOWLEDGEMENT --- p.v / TABLE OF CONTENTS --- p.vii / LIST OF FIGURES --- p.x / LIST OF TABLES --- p.xiv / Chapter I. --- Introduction --- p.1 / Chapter 1.1 --- Previous research on magnetoresistance --- p.1 / Chapter 1.2 --- Preparation methods --- p.12 / Chapter 1.3 --- Application prospects and existing problems of GMR materials --- p.15 / Chapter 1.4 --- Main contents in this thesis --- p.17 / Chapter II. --- The facing-target sputtering technique --- p.20 / Chapter 2.1 --- Brief description of FTS method --- p.20 / Chapter 2.2 --- Considerations and studies about the deposition conditions of La-Ca-Mn-O thin films --- p.26 / Chapter 2.2.1 --- Substrate materials --- p.26 / Chapter 2.2.1.1 --- Mismatch of lattice constant --- p.26 / Chapter 2.2.1.2 --- Thermal expansion coefficient --- p.31 / Chapter 2.2.1.3 --- Cleaning and surface treatment --- p.33 / Chapter 2.2.2 --- Substrate temperature --- p.35 / Chapter 2.2.3 --- Discharge pressure and sputtering power --- p.36 / Chapter 2.2.4 --- Oxygen content and critical thickness --- p.36 / Chapter 2.3 --- Fabrication and characteristics of La-Ca-Mn-O target materials --- p.42 / Chapter 3.2.1 --- Fabrication process --- p.42 / Chapter 2.3.2 --- Characterizations --- p.46 / Chapter 2.3.2.1 --- Structural parameters --- p.46 / Chapter 2.3.2.2 --- Electrical and magnetic properties --- p.51 / Chapter III. --- Growth of La-Ca-Mn-O thin films with c-axis orientation --- p.53 / Chapter 3.1 --- Thin film deposition --- p.53 / Chapter 3.2 --- Characterization methods --- p.53 / Chapter 3.2.1 --- XRD --- p.54 / Chapter 3.2.2 --- SEM/EDX --- p.54 / Chapter 3.2.3 --- VSM --- p.57 / Chapter 3.3 --- Results and discussions --- p.58 / Chapter 3.3.1 --- Structures of the films grown on (100) MgO --- p.58 / Chapter 3.3.2 --- Resistance and magnetoresistance --- p.62 / Chapter 3.3.3 --- Annealing effect --- p.69 / Chapter 3.4.3.4 --- Magnetization --- p.71 / Chapter 3.4 --- Conclusion --- p.75 / Chapter IV. --- Epitaxial growth of single crystal LCMO thin films with a-axis orientation --- p.77 / Chapter 4.1 --- Motivation and thin film deposition --- p.77 / Chapter 4.2 --- Characterizations --- p.79 / Chapter 4.2.1 --- DCD/GID --- p.79 / Chapter 4.2.2 --- Laue diffractometry --- p.84 / Chapter 4.3 --- Results and discussions --- p.85 / Chapter 4.4 --- Conclusion --- p.91 / Chapter V. --- Crystal growth mechanisms in the deposition of LCMO thin films --- p.93 / Chapter 5.1 --- Introduction --- p.93 / Chapter 5.2 --- AFM/STM --- p.96 / Chapter 5.3 --- Step-flow growth --- p.100 / Chapter 5.4 --- Roughening growth --- p.107 / Chapter 5.5 --- 3-D growth --- p.111 / Chapter 5.6 --- Conclusion --- p.119 / Chapter VI. --- Anisotropy properties of epitaxial LCMO thin films and colossal low field magnetoresistance --- p.122 / Chapter 6.1 --- Introduction --- p.122 / Chapter 6.2 --- Experiments --- p.124 / Chapter 6.3 --- Results and discussions --- p.125 / Chapter 6.3.1 --- Morphology --- p.125 / Chapter 6.3.2 --- Transport properties --- p.125 / Chapter 6.4 --- Conclusion --- p.134 / Chapter VII. --- Optical response of epitaxial LCMO thin films --- p.135 / Chapter 7.1 --- Introduction --- p.135 / Chapter 7.2 --- Experimental procedures --- p.138 / Chapter 7.2.1 --- Sample preparation --- p.138 / Chapter 7.2.2 --- Measurements of the optical spectra --- p.140 / Chapter 7.2.3 --- Measurements of the optical response --- p.140 / Chapter 7.3 --- Experimental results and discussions --- p.142 / Chapter 7.3.1 --- Optical spectra --- p.142 / Chapter 7.3.2 --- Optical response characteristics --- p.145 / Chapter 7.3.3 --- 1/f noise in LCMO materials --- p.148 / Chapter 7.4 --- Potential applications --- p.154 / Chapter 7.5 --- Conclusion --- p.156 / Chapter VIII. --- Conclusion and further studies --- p.158 / Chapter 8.1 --- Conclusion --- p.158 / Chapter 8.2 --- Further studies --- p.161 / References --- p.165

Orientador: Elidiane Cipriano Rangel / Banca: José Humberto Dias da Silva / Banca: Adriana de Oliveira Delgado Silva / Resumo: Filmes de alumina foram depositados a partir de um nova metodologia de deposição a plasma, utilizando o pó de acetilacetonato de alumínio (AAA) como precursor. Em trabalho prévio do grupo, foi demonstrada a viabilidade do sputterring do AAA em plasma de argônio para deposição de filmes finos. Os bons resultados obtidos estimularam o desenvolvimento do presente trabalho, visando a aperfeiçoamento da metodologia de deposição. Para isso, primeiramente foram investigados os efeitos da alteração da composição química da atmosfera do plasma, por meio da incorporação de diferentes proporções de oxigênio (02%) ao argônio, tornando o processo em sputtering reativo. As deposições foram realizadas espalhando-se o pó do AAA no eletrodo inferior de uma sistema de plasma acoplado capacitivamente. Argônio, oxigênio ou mistura de ambos foram admitidos até a pressão de 11,0 Pa. O plasma foi gerado pela aplicação de sinal de radiofrequêcia (13,56 MHz, 150 W) ao eletrodo contendo o pó, mantendo-se o eletrodo superior, também utilizando como porta-amostras, aterrado. O tempo de deposição foi de 90 minutos. Investigou-se o efeito da O2%, variada de 0 a 100% nas propriedades dos filmes. Na etapa subsequente, filmes foram depositada por sputtering reativo utilizando-se a condição considerada ótima na última etapa do trabalho (02% = 25%) e mantendo-se as condições de pressão, potência e tempo de tratamento constantes. Todavia, ao invés de aterrar o porta-amostras, pulsos retangulares negativos (600 V, 2 kHz, 1-100% de ciclo dos trabalho) foram aplicados, promovendo bombardeamento iônico durante a deposição por sputtering reativo. O efeito de ciclo de trabalho dos pulsos nas propriedades dos filmes foi avaliado. Na última etapa do trabalho, filmes foram depositadas pelo sputtering reativo a partir de atmosferas contendo 25% de O2 e 75% de Ar e em condições mais... (Resumo completo, clicar acesso eletrônio abaixo) / Abstract: Alumina films were deposited by a new plasma deposition method using aluminum acetylacetonate (AAA) powder as precursor. In a previous study by our group, the feasibility of AAA sputtering in argon plasmas for thin films deposition was demonstrated. The good results stimulated the development of this work, aiming at the improvement of the deposition methodology. For this, the effects of modification in the chemical composition of the plasma atmosphere were first investigated, through the use of different oxygen to argon proportions (O2%), making the process a reactive sputtering. The deposition were performed by spreading the AAA powder on the lower electrode of a capacitively coupled plasma system. Argon, oxygen or a mixture of both were admitted up to a pressure of 11.0 Pa. Application of radiofrequency power (13.56 MHz, 150 W) to the powder covered electrode generated the plasma, keeping the upper electrode, also used as a sample holder, grounded. Deposition times of 90 minutes were used. The effects of varying the oxygen proportion from 0 to 100% on the film properties were studied. In the subsequent stage, films were deposited by reactive sputtering using the condition considered best in the stage of the work (O2%=25%) and keeping the pressures, power and treatment time constant. Instead of grounding the sample holder, however, negative rectangular pulses (600 V, 2 KHz, 1-100% duty cycle) were appliedm promoting ion bombardment during the deposition by reactive sputerring. The influence of the pulse duty cycle on the properties of the films was evaluated. In the last study stage, films were deposited by reactive sputtering from atmspheres containing 25% O2 and 75% Ar and with more energetic conditions than those used in previous cycles. For such, a first samples set was prepared by resistive heating of the sample holder (410ºC) in a lower plasma pressure (4,0 Pa) than that previously used... (Complete abstract electronic access below) / Mestre

Graduation date: 1993

Thesis--M. Phil., University of Hong Kong.

published_or_final_version / Physics / Master / Master of Philosophy

Graduation date: 1993

Thesis (Ph.D.)--Auburn University, 2007. / Abstract. Vita. Includes bibliographic references.

Thesis (Ph. D.)--University of Hong Kong, 2008. / Also available in print.