Thesis(M.S.)--Auburn University, 2007. / Abstract. Vita. Includes bibliographic references.

Thesis (M.S.)--University of North Texas, Aug., 2009. / Title from title page display. Includes bibliographical references.

Thesis (M.S.)--Rochester Institute of Technology, 2006. / Typescript. Includes bibliographical references (leaves 70-72).

Orientador: José Humberto Dias da Silva / Banca: Luis Augusto Sousa Marques da Rocha / Banca: Marcelo Mulato / O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem carater institucional e integra as atividades de pesquisa em materiais de diversos campi / Resumo: Os efeitos causados por tratamentos térmicos em filmes de TiO2 preparados pela técnica de sputtering reativo foram investigados. Foram realizadas duas deposições, variando somente a temperatura de substrato, com aquecimento de 450ºC e sem aquecimento e foram obtidos filmes com espessura entre 330 e 450 nm. Os tratamentos térmicos foram realizados em temperaturas de 300 a 900ºC, intervalos de 100Cº e durações de 20 minutos e 300 minutos. As atmosferas utilizadas foram ambiente e vácuo (10-4torr). Foram focos da pesquisa as mudanças da fase anatase para rutila, variações na energia do gap e modificações na morfologia e na superfície. Tais mudanças foram identificadas por meio de espectros de transmitância óptica e medidas estruturais de raios X e Raman. Como principais resultados, obteve-se que todos os filmes cresceram na fase anatase com uma morfologia colunar, a temperatura de transição de fase depende da atmosfera de tratamento térmico (900ºC para atmosfera ambiente e 800ºC para vácuo), a presença da fase rutila está relacionada com o espalhamento de luz e o tempo de tratamento não teve influência nos resultados / Abstract: Not available / Mestre

Made available in DSpace on 2014-06-11T19:30:18Z (GMT). No. of bitstreams: 0 Previous issue date: 2013-12-09Bitstream added on 2014-06-13T20:40:12Z : No. of bitstreams: 1 toniato_rg_me_bauru.pdf: 3295671 bytes, checksum: aa55e3de92e3cc1fb12d050f6db7af42 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Os efeitos causados por tratamentos térmicos em filmes de TiO2 preparados pela técnica de sputtering reativo foram investigados. Foram realizadas duas deposições, variando somente a temperatura de substrato, com aquecimento de 450ºC e sem aquecimento e foram obtidos filmes com espessura entre 330 e 450 nm. Os tratamentos térmicos foram realizados em temperaturas de 300 a 900ºC, intervalos de 100Cº e durações de 20 minutos e 300 minutos. As atmosferas utilizadas foram ambiente e vácuo (10-4torr). Foram focos da pesquisa as mudanças da fase anatase para rutila, variações na energia do gap e modificações na morfologia e na superfície. Tais mudanças foram identificadas por meio de espectros de transmitância óptica e medidas estruturais de raios X e Raman. Como principais resultados, obteve-se que todos os filmes cresceram na fase anatase com uma morfologia colunar, a temperatura de transição de fase depende da atmosfera de tratamento térmico (900ºC para atmosfera ambiente e 800ºC para vácuo), a presença da fase rutila está relacionada com o espalhamento de luz e o tempo de tratamento não teve influência nos resultados / Not available

>Magister Scientiae - MSc / Vanadium dioxide (VO2) films have been known as the most feasible thermochromic nano-coatings for smart windows which self control the solar radiation and heat transfer for energy saving and comfort in houses and automotives. Such an attractive technological application is due to the fact that VO2 crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature TM of about 68°C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated to the nature of the microstructure, stoichiometry and some other surrounding parameters of the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of VO2 thin films synthesized by inverted cylindrical magnetron sputtering. Vanadium dioxide thin films were deposited on glass substrate, at various temperatures between 350 to 600 0C, deposition time kept constant at 1 hour. Prior the experiment, deposition conditions such as base pressure, oxygen pressure, rf power and target-substrate distance were carefully optimized for the quality of VO2 thin films. The reports results are based on AFM, XRD, RBS, ERDA and UV-VIS. The atomic force microscopy (AFM) was used to study the surface roughness of the thin films. Microstructures and orientation of grain size within the VO2 thin films were investigated by the use of X-ray diffraction technique. The stoichiometry and depth profiles of the films were all confirmed by RBS and ERDA respectively. The optical properties of VO2 were observed using the UV-Vis spectrophotometer.

Ph.D. / The reaction of direct current (DC) magnetron sputtered metallic CuIn and CuInGa alloys to a reactive H2Se/Ar/H2S gaseous atmosphere is an attractive industrial production process to produce Cu-based chalcopyrite absorber films for applications in high efficiency photovoltaic modules. This deposition process is generally referred to as a two-step deposition technology. However, the obvious technological advantages of this deposition technology are overshadowed by growth-related anomalies, such as the separation or at least partial separation of the ternary phases (i.e. CuInSe2, CuGaSe2 and CuInS2) during the high temperature chalcogenization. This in turn prevents the effective band-gap widening of the semiconductor alloys in order to achieve open-circuit voltages in excess of 600mV, which is a critical prerequisite for the optimal performance of thin film solar modules. Against this background, a detailed study was undertaken in order to understand the formation kinetics of quaternary CuIn(Se,S)2 and pentenary Cu(In,Ga)(Se,S)2 alloys deposited with a reproducible two-step growth technology. The main objective of this study was to optimize a complex set of experimental parameters in order to deposit homogenous alloys in which the band-gap value of the resulting semiconductor film could be modified in order to maximize the operating parameters of photovoltaic devices. This was achieved by the homogenous incorporation of S and/or Ga into the chalcopyrite lattice, resulting in shrinkage of the lattice parameters and hence increase in band-gap value Eg. However, the substitution of In with Ga and Se with S proved to be a complex process. It was, for example, observed that separation or at least partial separation of the ternary phases already occurs during the chemical reaction between the hydrogen selenides (H2Se) gas and the metallic precursors. Detailed studies indicated that this phenomenon was strongly related to the selenization parameters (e.g. reactive gas concentration, and reaction temperature and time) as well as the Cu/(In + Ga) atomic ratio. In optimized processes, the metallic precursor films were partially selenized in order to produce at least one partially reacted Cu-III-VI2 ternary alloy and group Cu-VI and III-VI binary phases. The partially selenized alloys were subsequently sulphurized under optimal thermal conditions in a H2S:Ar gas mixture to produce homogeneous single-phase quaternary and pentenary chalcopyrite alloys. X-ray diffraction (XRD) studies revealed that the lattice parameters of the chalcopyrite lattice decreased linearly with the incorporation of S and/or Ga, according to the predictions of Vegard’s law. Gracing incidence x-ray diffraction (GIXRD) studies on the compound semiconductors revealed that the lattice parameters remained virtually constant through the entire depth of the layer. Optical studies revealed a shift in the band-gap value of the absorber films as function of the S concentration. The band-gap of the absorber films could be varied between 0.99 and 1.35eV by controlling the S/Se anion ratio during the diffusion process, while maintaining the Ga/III atomic ratio constant at 0.25. Solar cells were completed by chemical bath deposition (CBD) of CdS and radio frequency (RF) sputtered intrinsic and highly conductive ZnO films onto the absorber films. The cells were evaluated under standard A.M. 1.5 conditions. Devices manufactured from CuIn(Se,S)2 and Cu(In,Ga)(Se,S)2 based alloys demonstrated average open-circuit voltages (Voc) and short-circuit current densities (Jsc) values of 470 and 650 mV and 20 and 33 mA.cm-2, respectively. A plot of the open-circuit voltage as function of the band-gap revealed an experimental relationship of: Voc = (Eg/q – 0.6) mV for Eg < 1.3 eV. The fill factor (FF) values varied between 35 and 56% and device efficiencies () between 4 and 13%, depending on the S/Se anion ratio and Ga incorporation. The findings from the studies clearly indicated that a better understanding of the CuIn(Se,S)2 and Cu(In,Ga)(Se,S)2 formation process led to absorber material with improved material properties. It was also demonstrated that it is possible to produce a homogenous CuIn(Se,S)2 and Cu(In,Ga)(Se,S)2 absorber films with the scalable two-step deposition process.

No description available.

The fabrication of bilayer and multilayer Mo/Al thin films using a conventional multi-target rf-diode sputter deposition system was studied. The films were deposited on glass and Si( 100) substrates. The as-deposited films were characterized with respect to their structure and composition profiles using X-Ray diffraction, AES, SEM, TEM, and RBS techniques. The as-deposited bilayer films were of good quality with an interface thickness of about 200 Ã . They were annealed at different temperatures in the range of 300-600°C for different times. Diffusional intermixing and phase changes were monitored and diffusivity measurements were made. The growth characteristics of intermetallic compounds were analysed. Mo/Al multilayer thin films with layer thicknesses less than 200 Ã were also deposited. An assessment of structural and compositional modulations in these multilayer films revealed the need for the conversion of the conventional diode sources to magnetron sources for improvement of film quality. Also presented are a few preliminary theoretical calculations for high-energy ion-beam mixing of the Mo/Al bilayer thin films. / Master of Science

No description available.