Die vorliegende Arbeit beschaeftigt sich mit dem strukturellen Aufbau von (1-100) M-plane GaN, das mit plasmaunterstuetzter Molekularstrahlepitaxie auf gamma-LiAlO2(100) Substraten gewachsen wurde. Die heteroepitaktische Ausrichtung einerseits, sowie die Mikrostruktur und die Erzeugungsmechanismen der Defekte andererseits, wurde mit der Transmissionselektronenemikroskopie (TEM) systematisch untersucht. Das gamma-LiAlO2 Substrat reagiert heftig im Mikroskop unter Bestrahlung mit hochenergetischen Elektronen. Waehrend dieser Strahlenschaedigung verliert das Material seine urspruengliche kristalline Struktur und vollzieht eine Phasentransformation, die anhand einer Serie von Feinbereichsbeugungsdiagrammen nachgewiesen werden konnte. Die atomare Grenzflaechenstruktur zwischen epitaktisch gewachsenem alpha-GaN(1-100) und tetragonalem gamma-LiAlO2 Substrat ist mittels HRTEM untersucht worden. Die neuartige Epitaxiebeziehung ist mit Elektronenbeugung bestaetigt worden und lautet folgendermassen: (1-100)GaN liegt parallel zu (100)gamma-LiAlO2 und [11-20]GaN ist parallel zu [001]gamma-LiAlO2. Die Realstruktur der M-plane GaN Schichten, die auf (100)gamma-LiAlO2 gewachsen werden, unterscheidet sich erheblich von der in C-plane Orientierung hergestellten Epischichten. Ausfuehrliche TEM Untersuchungen zeigen, dass die M-plane Schichten vor allem intrinsische (I1 und I2) und extrinsische (E) Stapelfehler in der Basalebene enthalten. Der vorherrschende I2 Stapelfehler besitzt keine Komponente des Verschiebungsvektors senkrecht zur Ebene und ist damit nicht geeignet, epitaktische Dehnung entlang der [11-20] Richtung abzubauen. Darueberhinaus ist eine komplexe Grenze in der (10-10) Prismen- flaeche entdeckt worden, die zur Grenzflaeche geneigt verlaeuft. Die Defekte in den M-plane GaN Epischichten werden waehrend der anfaenglichen Keimbildungsphase erzeugt. Atomare Stufen entlang der [001] Richtung auf dem LiAlO2 Substrat fuehren zur Bildung von Stapelfehlern vom Typ I2. / In this work the structure of (1-100)M-plane GaN epitaxially grown on gamma-LiAlO2(100) by using plasmaassisted molecular beam epitaxy (PAMBE) is studied. The heteroepitaxial alignment and the microstructure of M-plane GaN as well as the defect formation in the layer are systematically investigated by using transmission electron microscopy (TEM). The gamma-LiALO2 substrate reacts under irradiation of high-energy electrons in the TEM (200-300 keV).The material looses its original crystalline structure during this process undergoing irradiation damage followed by a phase transformation as it is verified by a series of selected area diffraction patterns taken under constant electron dose. The result is a structural phase transformation from the tetragonal gamma to the trigonal alpha phase. The atomic interface structure of epitaxially grown hexagonal alpha-GaN(1-100) layers on tetragonal gamma-LiAlO2 (100) substrates is investigated by means of HRTEM. The novel epitaxial orientation relationship verified by electron diffraction is given by (1-100)GaN parallel to (100)gamma-LiAlO2 and [11-20]GaN parallel to [001]gamma-LiAlO2. The defect structure of M-plane GaN epilayers grown on gamma-LiAlO2(100) substrates is different to that of C-plane GaN. Our detailed TEM studies reveal that the M-plane layers mainly contain intrinsic I1 and I2 and extrinsic E basal plane stacking faults. The dominant I2 stacking fault has no out-of-plane displacement vector component and is thus not qualified for epitaxial strain relief along the [11-20] axis. Beyond this, a complex type of planar defect is detected in the (10-10) prism plane which is inclined with respect to the interface. The study of nucleation samples shows that the surface morphology is directly correlated to the generation of the dominant planar defects. Atomic steps along the [001] direction in the gamma-LiAlO2 substrate result in the formation of basal plane stacking faults I2.

Within the collaborative research center SFB 920 “Multifunctional Filters for Metal Melt Filtration”, the thermally induced formation of metastable aluminum oxides and related microstructural changes were investigated. It was confirmed that the γ-Al₂O₃ phase possesses a defective spinel structure containing Al vacancies that preserve the stoichiometry of this phase. The presence of vacancies fragments apparently the γ-Al₂O₃ crystallites into nanocrystalline domains, which are separated by non-conservative antiphase boundaries (APBs) of the type {100} ¼<110>. These APBs form a 3D network that is randomly distributed over all crystallographically equivalent lattice planes. This phenomenon causes a starlike (and hkl-dependent) broadening of the reciprocal lattice points that correspond to the aluminum sublattice. It was shown that the extent of the broadening of the reciprocal lattice points can be predicted by employing the phase shift factors. With increasing degree of the APBs ordering, the initial streaks representing the broadened reflections start to split, forming superstructure reflections. This superstructure of γ-Al₂O₃ is commonly known as δ-Al₂O₃. Between the ordered APBs, the crystal structure of δ-Al₂O₃ is closely related to the crystal structure of monoclinic θ-Al₂O₃. The phase transition of γ-Al₂O₃/δ-Al₂O₃ to θ-Al₂O₃ proceeds via migration of just three Al³⁺ cations to the neighboring tetrahedral and octahedral sites in the cubic close packed (ccp) oxygen sublattice. The general migration vector is ⅛<111> (γ-Al₂O₃). Diffraction effects associated with different intermediate states can be explained by an improper long-range ordering of equivalent APBs or certain Al³⁺ cations and the local formation of θ-Al₂O₃ within the δ-Al₂O₃ superstructure. The formation of θ-Al₂O₃ is accompanied by an increase of the occupancy of the tetrahedral sites in the oxygen sublattice by the Al³⁺ cations. In surrounding local γ-Al₂O₃ domains, however, some cations migrate from the tetrahedral to the octahedral sites. Thus, the local formation of θ-Al₂O₃ is nearly invisible for the ²⁷Al 1D magic angle spinning nuclear magnetic resonance (MAS NMR) spectroscopy. Still, it was recognized by the 2D multiple quantum (MQ) MAS NMR spectroscopy. A continuous formation of the θ-Al₂O₃ domains was confirmed by the Raman spectroscopy, X-ray diffraction (XRD) and selected area electron diffraction (SAED). The proposed microstructure and transformation models helped to explain the thermal stabilization of the metastable alumina phases by Si-doping. For investigation of the thermally induced phase transitions in metastable alumina phases, boehmite (γ-AlO(OH)) was chosen as the starting compound. However, the metastable alumina phases were also observed in endogenous inclusions present in solidified steel melts. For identification of these phases, a procedure for reconstruction of spherical Kikuchi maps from recorded EBSD patterns was developed.