This study uses high resolution satellite measurements from the Tropical Rainfall Measuring Mission (TRMM), Quick Scatterometer (QuikSCAT) and Special Sensor Mi¬crowave Imager (SSM/I) to investigate the variability of sea surface temperature (SST), surface wind velocity, water vapor, cloud liquid water and precipitation associated with westward moving tropical instability waves (TIWs) in the Atlantic Ocean from 1998 to 2005. On interannual scales, TIWs in the Pacific Ocean are strongest during the cold phase of El Ni¨ no Southern Oscillation (ENSO), when the cold tongue is most pronounced. The waves are weak during the warm phase of ENSO. A low-frequency Atlantic air-sea cou-pled mode influences the TIW activity in the Atlantic Ocean as ENSO does in the Pacific Ocean. The characteristics of TIWs are largely associated with the background oceano-graphic states. Coherent ocean-atmosphere patterns are shown in the Atlantic Ocean during eight years. Southeasterly trades strengthen and water vapor increases over warm SST anomalies associated with TIWs. The opposite is true over cold TIW SST anomalies. The cloud liquid water and rain response to the SST follows a very similar pattern, appearing to be roughly in phase with wind convergence and divergence in the central tropical Atlantic. The atmospheric response to the TIW SST anomalies extends north of the TIW active region, suggesting a remote response to the TIWs. The atmospheric response to the Atlantic TIWs shows interannual variability. In 1999, the rainfall response to the TIW SST anomalies is much larger than in other years, which is due to the southward movement of Atlantic ITCZ (Intertropical Convergence Zone). When the Atlantic ITCZ moves south, it is more susceptible to TIW influence. One regional climate model and one global climate model are applied to study the mechanism of atmospheric response to the Atlantic TIWs with daily TMI satellite SST forcing. Both models successfully simulated the wind velocity, wind convergence and pre-cipitation as observed. While the satellite observations support the vertical mixing mech-anism for the surface wind response to TIWs, both models show the pressure gradient mechanism is dominant in the Atlantic.

Avec le développement de nouveaux dispositifs apparait le besoin d’être capable de contrôler la chimique de surfaces de substrats multi-échelle et multi-matériaux. Plusieurs techniques font appel à de la chimie localisée via différentes technologies. Une approche consiste à exploiter les différences de réactivités chimiques entre les différents matériaux du substrat et différents groupements chimiques de manière à fonctionnaliser sélectivement chaque matériaux pour former des couches minces organiques de type « Self Assembled Monolayer »: Ce principe proposée par Pr. G. M. Whitesides est appelé chimie orthogonale. Dans le cadre de cette thèse, le but ultime était de réaliser la fonctionnalisation chimique orthogonale de substrats dont la surface était composée de SiO2/Au/TiW La première étape de ce travail a été de déterminer pour la première fois la fonction chimique la plus adaptée pour la fonctionnalisation de TiW. Pour se faire nous avons comparé la chimie des silanes, des acides phosphoniques et des catéchols. Après caractérisations (XPS, ToF-SIMS, IR) des différentes couches, la voie des acides phosphoniques semblait être celle donnant lieu à la couche la plus stable. Ensuite nous avons étudié l’orthogonalité sur de substrats bi-matériaux (SiO2/TiW ou Au/TiW), et enfin sur substrat dont la surface était constituée de Au/SiO2/TiW. / The development of nanotechnologies makes it possible to manufacture the micro or nanometric-sized patterns with various materials (dielectrics, metals, semiconductors). These heterogeneous surfaces are commonly used in the electronics industry for the production of nanoelectronic structures and components: transistors, memories or sensors. The concept of orthogonal chemical functionalization was first proposed by George M. Whitesides to modify the surfaces composed of different materials at the macroscopic scale. In this context, this PhD work aimed at exploring the orthogonal chemical functionalization approach on a predefined patterned titanium tungsten (TiW) surface by lithography producing. Pattern materials (Au, SiO2) are chosen to have different chemical properties, which can be functionalized with completely independent reactions. To achieve this aim, we have studied three different chemical groups for the formation of organolayers (silane, catechol, phosphonic acid) on TiW for the first time. The three layers were characterized (XPS, IR, ToF-SIMS) and the stability of the formed organolayers was also addressed. Then we developed and ascertained the orthogonal chemical functionalization of patterned Au/TiW and Au/SiO2/TiW surfaces. It proposes a novel strategy for the orthogonal functionalization on a triple-material patterned surface. In addition, the capture of nanoparticles by electrostatic interaction at specific location on Au/TiW patterned substrate was successfully implemented to prove the interest of such method for colloids trapping.

<p>As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. One disadvantage of the BJT compared with MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) is that the BJT requires a more complex drive circuit with higher power capability. For the SiC BJT to become competitive with field effect transistors, it is important to achieve high current gains to reduce the power required by the drive circuit. Although much progress in SiC BJTs has been made, SiC BJTs still have low common emitter current gain typically in the range 10-50. In this work, a record high current gain exceeding 60 has been demonstrated for a SiC BJT with a breakdown voltage of 1100 V. This result is attributed to an optimized device design, a stable device process and state-of-the-art epitaxial base and emitter layers.</p><p>A new technique to fabricate the extrinsic base using epitaxial regrowth of the extrinsic base layer was proposed. This technique allows fabrication of the highly doped region of the extrinsic base a few hundred nanometers from the intrinsic region. An important factor that made removal of the regrowth difficult was that epitaxial growth of very highly doped layers has a faster lateral than vertical growth rate and the thickness of the p+ layer therefore has a maximum close to the base-emitter sidewall. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain the low current gain.</p><p>Under high power operation, the SiC BJTs were strongly influenced by self-heating, which significantly limits the performance of device. The DC I-V characteristics of 4H-SiC BJTs have also been studied in the temperature range 25 °C to 300 °C. The DC current gain at 300 °C decreased 56 % compared to its value at 25 °C. Selfheating effects were quantified by extracting the junction temperature from DC measurements.</p><p>To form good ohmic contacts to both n-type and p-type SiC using the same metal is one important challenge for simplifying SiC Bipolar Junction Transistor (BJT) fabrication. Ohmic contact formation in the SiC BJT process was investigated using sputter deposition of titanium tungsten to both n-type and p-type followed by annealing at 950 oC. The contacts were characterized with linear transmission line method (LTLM) structures. The n+ emitter structure and the p+ base structure contact resistivity after 30 min annealing was 1.4 x 10-4 Ωcm2 and 3.7 x 10-4 Ωcm2, respectively. Results from high-resolution transmission electron microscopy (HRTEM), suggest that diffusion of Si and C atoms into the TiW layer and a reaction at the interface forming (Ti,W)C1-x are key factors for formation of ohmic contacts.</p>

As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. One disadvantage of the BJT compared with MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) is that the BJT requires a more complex drive circuit with higher power capability. For the SiC BJT to become competitive with field effect transistors, it is important to achieve high current gains to reduce the power required by the drive circuit. Although much progress in SiC BJTs has been made, SiC BJTs still have low common emitter current gain typically in the range 10-50. In this work, a record high current gain exceeding 60 has been demonstrated for a SiC BJT with a breakdown voltage of 1100 V. This result is attributed to an optimized device design, a stable device process and state-of-the-art epitaxial base and emitter layers. A new technique to fabricate the extrinsic base using epitaxial regrowth of the extrinsic base layer was proposed. This technique allows fabrication of the highly doped region of the extrinsic base a few hundred nanometers from the intrinsic region. An important factor that made removal of the regrowth difficult was that epitaxial growth of very highly doped layers has a faster lateral than vertical growth rate and the thickness of the p+ layer therefore has a maximum close to the base-emitter sidewall. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain the low current gain. Under high power operation, the SiC BJTs were strongly influenced by self-heating, which significantly limits the performance of device. The DC I-V characteristics of 4H-SiC BJTs have also been studied in the temperature range 25 °C to 300 °C. The DC current gain at 300 °C decreased 56 % compared to its value at 25 °C. Selfheating effects were quantified by extracting the junction temperature from DC measurements. To form good ohmic contacts to both n-type and p-type SiC using the same metal is one important challenge for simplifying SiC Bipolar Junction Transistor (BJT) fabrication. Ohmic contact formation in the SiC BJT process was investigated using sputter deposition of titanium tungsten to both n-type and p-type followed by annealing at 950 oC. The contacts were characterized with linear transmission line method (LTLM) structures. The n+ emitter structure and the p+ base structure contact resistivity after 30 min annealing was 1.4 x 10-4 Ωcm2 and 3.7 x 10-4 Ωcm2, respectively. Results from high-resolution transmission electron microscopy (HRTEM), suggest that diffusion of Si and C atoms into the TiW layer and a reaction at the interface forming (Ti,W)C1-x are key factors for formation of ohmic contacts. / QC 20101208

Práce je zaměřena na výzkum struktur založených na vlnovodu integrovaném do textilu (TIW). Pozornost je věnována elektrické charakterizaci textilních materiálů (textilní substráty, nitě), které jsou využívány při implementaci antén, rekonfigurovatelných a aktivních obvodů integrovaných do textilu. Práce se zabývá návrhem vícevrstvých přechodů mezi mikropáskovým vedením na konvenčním substrátu a vedeními integrovanými do textilu. Dále je prezentován koncept přepínače integrovaného do textilu. Přepínač je řízen vodivými sloupky, které vytvářejí otevřenou či zavřenou stěnu prostřednictvím stejnosměrně ovládaných PIN diod. Na závěr je formulována metodika návrhu kruhově polarizovaných antén integrovaných do textilu, jež jsou určeny pro práci v ISM pásmech až do 24 GHz. Všechny postupy návrhu byly ověřeny simulacemi a měřeními reálných vzorků, které byly vyrobeny sítotiskem stříbrnou polymerovou pastou. Polovodičové komponenty byly k obvodům přilepeny vodivým stříbrným lepidlem. Komponenty vyrobené sítotiskem byly porovnávány s referenčními strukturami, které byly realizovány pomocí samolepicí měděné fólie.