Orientador: Ioshiaki Doi / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-20T21:32:16Z (GMT). No. of bitstreams: 1 Neli_RobertoRibeiro_D.pdf: 20995056 bytes, checksum: 0072f9af377dc8c222632b4d9608b5b0 (MD5) Previous issue date: 2012 / Resumo: Este trabalho tem como objetivo a fabricação e caracterização de sensores térmicos descritos como bolométricos, que são dedicados a detecção da radiação infravermelha distante. Estes sensores são construídos a partir de técnicas de microfabricação, utilizando filmes finos seletivos a corrosão úmida. Estas microestruturas mecânicas são formadas sobre laminas de silício a partir de um ataque químico úmido sobre a superfície da mesma. Como estas estruturas são obtidas utilizando-se técnicas convencionais de fabricação de circuitos integrados, torna-se possível a integração monolítica de circuitos eletrônicos e dispositivos mecânicos, permitindo o desenvolvimento de microssistemas integrados. O ouro poroso ou "ouro negro" foi estudado e caracterizado, sendo utilizado como absorvedor de radiação e apresentou neste trabalho índices de absorção superiores a 80%. Foi desenvolvido também um processo para integrar este filme ao dispositivo. O silício policristalino, submetido a dopagem de boro, foi desenvolvido para se obter valores de TCR próximos a -2%K-1 e resistências abaixo de 1k'ômega'. Finalmente, foram desenvolvidos os layouts, fabricadas e testadas as microestruturas de diversas geometrias, como pontes, vigas, membranas, espiras, entre outras. Os dispositivos bolométricos testados apresentaram TCR de -2,54%K-1 , um tempo de resposta de aproximadamente 2 ms, uma responsividade de 0,35 V/W e uma detectividade específica de 6,04.109 mHz1/2W-1, quando submetido a uma radiação de 0,85 THz / Abstract: This work has as a main goal the fabrication and characterization of thermal sensors, described as bolometrics, which are dedicated to detection of far infrared radiation. These sensors are fabricated using microfabrication techniques and the thin films are selectives to wet etching. These mechanical microstructures are formed on silicon wafers using a surface wet etching. As these structures are obtained using conventional techniques for CI's manufacturing, it becomes possible perform a monolithic integration of electronics and mechanical devices, allowing the integrated microsystems development. The porous gold or "gold black" used as a radiation absorber, was studied and characterized, and this study showed absorption index greater than 80%. Was developed a process to integrate this film to device. The doped polycrystalline silicon was performed to obtain TCR values near to -2% K-1 and resistance less than 1k'omega'. Finally, the layouts are designed, performed and tested the microstructure of various geometries such as bridges, beams, membranes, coils, among others. The devices tested presented TCR about -2.54% K-1, a response time of approximately 2 ms, responsivity about 0.35 V / W and specific detectivity about 6.04x109 mHz1/2W-1 when subjected to a 0,85 THz radiation / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor em Engenharia Elétrica

The development of wide band gap semiconductors for power and RF electronics as well as high power silicon microelectronics has pushed the need for advanced thermal management techniques to ensure device reliability. While many techniques to remove large heat fluxes from devices have been developed, fewer advancements have been made in the development of new materials which can be integrated into the packaging architecture. This is especially true in the development of thermal interface materials. Conventional solders are currently being used for interface materials in the most demanding applications, but have issues of high cost, long term reliability and inducing negative thermomechanical effects in active die. Carbon nanotubes have been suggested as a possible thermal interface material which can challenge solders because of their good thermal properties and 1-D structure which can enhance mechanical compliance between surfaces. In this work, we have developed a novel growth and transfer printing method to manufacture vertically aligned CNTs for thermal interface applications. This method follows the nanomaterial transfer printing methods pioneered at Georgia Tech over the past several years. This process is attractive as it separates the high growth synthesis temperatures from the lower temperatures needed during device integration. For this thesis, CNTs were grown on oxidized Si substrates which allowed us to produce high quality vertically aligned CNTs with specific lengths. Through the development of a water vapor assisted etch process, which takes place immediately after CNT synthesis, control over the adhesion of the nanotubes to the growth surface was achieved. By controlling the adhesion we demonstrated the capability to transfer arrays of vertically aligned CNTs to polyimide tape. The CNTs were then printed onto substrates like Si and Cu using a unique gold bonding process. The thermal resistances of the CNTs and the bonded interfaces were measured using the photoacoustic method, and the strength of the CNT interface was measured through tensile tests. Finally, the heat dissipation capabilities of the vertically aligned CNTs were demonstrated through incorporation with high brightness LEDs. A comparison of LED junction temperatures for devices using a CNT and lead free solder thermal interface was made.

Trois techniques de mesure différentes ont été utilisées pour étudier la distribution des fluides dans un lit fixe : la tomographie à fils, le collecteur de liquide et un ensemble de thermistances. La tomographie à fils, dont la première application dans le cadre des lits fixes est décrite ici, a permis, tout comme le collecteur de liquide, d’obtenir des résultats intéressants concernant l’influence de paramètres tels que la distribution initiale, le type de chargement et les débits de fluides sur la distribution du liquide. L’étude a notamment montré l’importance de bien définir la maldistribution de liquide en termes de la grandeur mesurée et a apporté un regard critique vis-à-vis des consensus généraux concernant l’effet sur la distribution de liquide de paramètres tels que le débit de gaz (dont les expériences ont montré qu’elle dépend du distributeur utilisé) et le type de chargement (l’hypothèse selon laquelle le chargement dense disperse mieux le liquide dans la direction radiale par rapport au chargement lâche n’a pas été vérifié). Une étude réalisée en régime à haute interaction a permis aussi d’observer la relation étroite qui existe entre la distribution initiale et le régime d’écoulement / Three different measuring techniques were used to study the fluid distribution inside a trickle-bed reactor: the wire mesh tomography, the liquid collector and a set of thermistors. The liquid collector and specially the wire mesh tomography, whose first application in trickle bed reactors is described here, yielded interesting results concerning the influence of variables such as the initial liquid distribution, the loading method and the fluid flow rates on liquid maldistribution. Among the main observations, the study illustrates the importance of well defining liquid maldistribution in terms of the measured quantity and prompts to some caution when referring to some “normally accepted facts” like the advantages in terms of liquid distribution obtained when increasing the gas flow rate (which depends, according to this study, on the quality of initial liquid distribution) or when using a dense loading of the catalyst (the hypothesis according to which, compared with a sock loading, dense loading favors radial dispersion was not verified by the study). Also, a study performed under high interaction conditions showed the intimate relationship between the inlet distribution and the flow regime observed inside the reactor

Thesis (Ph.D.)--Harvard-Massachusetts Institute of Technology Division of Health Sciences and Technology Program in Medical Engineering and Medical Physics, 1981. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE / Vita. / Includes bibliographical references. / by Jonathan Walker Valvano. / Ph.D.

La technologie des microbolomètres est à ce jour la plus avancée pour l'imagerie IR non refroidie. Le LETI développe une technologie basée sur l'utilisation du silicium amorphe comme matériau thermistor. L'introduction d'un matériau alternatif doit permettre de poursuivre l'amélioration des performances. Cette étude considère une solution alternative à base de films minces d'oxydes nanocristallins. Deux procédés sont envisagés : le dépôt IBS et le dépôt MOCVD. L'étude des procédés ainsi que la caractérisation des matériaux ont permis la maîtrise et la compréhension des évolutions structurales et fonctionnelles mises en jeux. Des caractérisations électriques (résistivité, TCR, bruit en 1/f) sur dispositifs ont permis de débattre de l'intérêt de ces nouveaux matériaux. Une réflexion a été menée sur les relations microstructure-propriétés. / Microbolometers FPAs are nowadays the most advanced technology for uncooled IR imaging. Developments at CEA-LETI are based on the use of amorphous silicon as thermistor material. Introduction of an alternative material is necessary to keep on improving detectors performances. This study considersnanocrystalline oxides thin films as an alternative material. Two deposition techniques have been studied : IBS and MOCVD. Process studies as well as materials characterizations allowed us to control and understand the involved micro-structural evolutions. Electrical characterizations (resistivity, TCR, 1/f noise) on integrated devices were achievedin order to estimate the potential of these new materials. Microstructure-property relationships are also discussed.

Currently, the concept of multipurpose spacecrafts is being transformed into many small spacecrafts each of them performing specific tasks and thus leading to the realization of pico and nano satellites. No matter what is the application or size, demand for more number of IR channels for earth observation is ever increasing which necessitates significant reduction in the mass, power requirement and cost of the IR detectors. In this scenario, several order of magnitude mass and power savings associated with uncooled IR arrays are advantageous compared to cooled photon detectors. However the poor speed of response of uncooled microbolometer array devices obstruct the total replacement of cooled detectors in thermal imaging applications. This is especially true when the mission requires 50 m to 100 m ground resolution, in which even the "fastest" micro bolometer arrays turns "too slow" to follow the ground trace when looked from low earth orbit (LEO). Hence there is a great and unfulfilled requirement of faster uncooled detector arrays for meeting the demand for future micro and mini satellite projects for advanced missions. The present thesis describes the systematic studies carried out in development of high performance IR and THz detectors for space applications. Ge-Si-O thin films are prepared by ion beam sputtering technique with argon (Ar) alone and argon and oxygen as sputtering species, using sputtering targets of different compositions of Ge and SiO2. The deposited thin films are amorphous in nature and have chemical compositions close to that of the target. The study of electrical properties has shown that the activation energy and hence the thermistor constant (β) and electrical resistivity (ρ) are sensitive to oxygen flow rate, and they are the least for thin films prepared with Ar alone as the sputtering species. Different thermal isolation structures (TIS), consisting of silicon nitride (Si3N4) membrane of different thicknesses, Ge-Si-O thin film and, chromium coating on the rear side of the membrane, are prepared by bulk micro-machining technique, whose thermal conductance (Gth) properties are evaluated from the experimentally determined current-voltage (I-V) characteristics. Gth shows non-linear dependence with respect to raise in temperature of thin film thermistor due to Joule heating. The infrared micro-bolometer detectors, fabricated using one of the TIS structures have shown responsivity (<v) close to 115 V W−1 at a bias voltage of 1.5 V and chopping frequency of 10 Hz, thermal time constant (τth) of 2.5 ms and noise voltage of 255 nV Hz−1⁄2 against the corresponding thermal properties of Gth and thermal capacitance Cth equal to 9.0 × 10−5 W K−1 and 1.95 × 10−7 J K−1 respectively. The detectors are found to have uniform spectral response in the infrared region from 2 µm to 20 µm, and NEDT in the range from 108 mK to 574 mK when used with an F/1 optical system. The detector, in an infrared earth sensor system, is tested before an extended black body which simulates the earth disc in the laboratory and the results are discussed. As an extension of the single element detector to array device, design of a microbolometer array for earth sensor dispensing of scanning mechanisms is presented. It makes use of four microbolometer arrays with in-line staggered configuration that stare at the earth horizons, perceiving IR radiation in the spectral band of 14 µm to 16 µm. Design of the microbolometer has been carried out keeping in mind low power, lightweight, without compromising on the performance. An array configuration of 16 × 2 pixels is designed and developed for this purpose. Finite elemental analysis is carried out for design optimization to yield best thermal properties and thus high performance of the detectors. Suitable optical design configuration was arrived to image the earth horizon on to array. Using this optimum design, prototype arrays have been fabricated, packaged and tested in front of the black body radiation source and found to have Responsivity, NEP, and D∗ of 120 V W−1, 5.0 W Hz−1⁄2, 1.10 × 107 cm Hz1⁄2 W−1 respectively. The pixels show a uniform response within a spread of ±6 % and the pixel resistances are within a range of ±5 %. Optically Immersed Bolometer IR detectors are fabricated using electron beam evaporated Vanadium Oxide as the sensing material. Spin coated polyimide is used as medium to optically immerse the sensing element to the flat surface of a hemispherical germanium lens. This optical immersion layer also serves as the thermal impedance control layer and decides the performance of the devices in terms of responsivity and noise parameters. The devices have been packaged in suitable electro-optical packages and the detector parameters are studied in detail. Thermal time constant varies from 0.57 ms to 6.1 ms and responsivity from 75VW−1 to 757VW−1 corresponding to polyimide thickness in the range 2.0 μm to 70 μm for a detector bias of 9V. Highest D obtained was 1.28 × 108 cm Hz1⁄2W−1. Noise Equivalent Temperature Difference (NETD) of 20mK is achieved for devices with polyimide thickness of 32 μm, whereas the NETD × th product is the lowest for devices with moderate thickness of thermal impedance layer. Bolometric THz detectors were fabricated using V2O5 as sensing element immersed onto germanium hemispherical lens using polyimide as immersion media. These detectors were characterized for their efficiency in detection of THz radiation in the range 10 THz to 35 THz emitted by a black body radiator. The responsivity of the devices determined in four different frequency bands covering the spectrum of interest and a maximum responsivity of 398VW−1 was observed. A variation in the responsivity is observed which is due to the characteristics absorption of polyimide in the THz region of interest and can be avoided by replacing with HDPE which has less attenuation. NEP of 6.8 × 10−10WHz−1⁄2 was observed which is very close to the state of art in the case of uncooled detectors which entitles the detectors for spectroscopic applications. Specific Detectivity D* was observed to be much higher than the conventional detectors thanks to the benefits of immersion. NETD of 26mK was observed which is advantageous of application of these detectors in imaging applications These studies have lead to development of a new technology for fabrication of high performance IR and THz detectors which can be used for spectroscopic and imaging applications. Further, this technology can be scaled for development of linear and area arrays finding applications where the speed of respnose as well as sensitivity are of equal importance. from 0.57 ms to 6.1 ms and responsivity from 75 V W−1 to 757 V W−1 corresponding to polyimide thickness in the range 2.0 µm to 70 µm for a detector bias of 9 V. Highest D∗ obtained was 1.28 × 108 cm Hz1⁄2 W−1. Noise Equivalent Temperature Difference (NETD) of 20 mK is achieved for devices with polyimide thickness of 32 µm, whereas the NETD × τth product is the lowest for devices with moderate thickness of thermal impedance layer. Bolometric THz detectors were fabricated using V2O5 as sensing element immersed onto germanium hemispherical lens using polyimide as immersion media. These detectors were characterized for their efficiency in detection of THz radiation in the range 10 THz to 35 THz emitted by a black body radiator. The responsivity of the devices determined in four different frequency bands covering the spectrum of interest and a maximum responsivity of 398 V W−1 was observed. A variation in the responsivity is observed which is due to the characteristics absorption of polyimide in the THz region of interest and can be avoided by replacing with HDPE which has less attenuation. NEP of 6.8 × 10−10 W Hz−1⁄2 was observed which is very close to the state of art in the case of uncooled detectors which entitles the detectors for spectroscopic applications. Specific Detectivity D* was observed to be much higher than the conventional detectors thanks to the benefits of immersion. NETD of 26 mK was observed which is advantageous of application of these detectors in imaging applications These studies have lead to development of a new technology for fabrication of high performance IR and THz detectors which can be used for spectroscopic and imaging applications. Further, this technology can be scaled for development of linear and area arrays finding applications where the speed of respnose as well as sensitivity are of equal importance.