In this study, new compositions of Tsai-type 1/1 quasicrystal approximants Gd(14)Au(70)Si(16), Gd(14)Au(67)Ge(19), Tb(14)Au(70)Si(16) and Yb(16)Au(65)Ge(19)are synthesized using both self-flux and arc-melting-annealing techniques. Both syntheses routes resulted single phase samples. The crystal structures of the compounds are determined by collecting single crystal X-ray and/or powder X-ray and powder neutron diffraction intensities.  The atomic structure refinements indicated that the compounds are essentially iso-structural with the prototype Tsai-type 1/1 approximant crystal, YbCd6. However, there are subtle structural variations at their cluster centers and in the so-called cubic interstices which affects some of their physical properties. Thermoelectric and magnetic properties of the compounds are investigated. Significant differences are observed in the thermoelectric properties of Gd(14)Au(70)Si(16), Gd(14)Au(67)Ge(19) and Yb(16)Au(65)Ge(19) compounds which are explained on the bases of their crystal structures and chemical compositions. Magnetic susceptibility and specific heat measurements revealed ferromagnetic transitions at low temperatures, Tc ≈ 22.5 K for Gd(14)Au(70)Si(16) and Tc ≈ 13.1 K for Gd(14)Au(67)Ge(19), whereas, for the Tb(14)Au(70)Si(16) compound a ferrimagnetic-like transition is observed at Tc ≈ 9 K. Moreover, a re-entrant spin-glass transition is observed at TRSG ≈ 3.3 K for Gd(14)Au(67)Ge(19) compound. Finally, the magnetic structure of the Tb(14)Au(70)Si(16) compound was determined from powder neutron diffraction data which is to our knowledge the first magnetic structure refinement report in the family of quasicrystals and approximants.

The Cu-Sb-S compounds (Cu12Sb4S13, CuSbS2, Cu3SbS3 and Cu3SbS4) have the advantages of earth-abundance, low-toxicity and low-cost, compared with conventional thermoelectric materials. This work provides a comprehensive study on the synthesis methods, crystal structures and thermoelectric properties of Cu-Sb-S compounds. All of the samples were prepared by mechanical alloying combined with SPS, which had high density, high purity and very fine microstructure. The lone-pair electrons of Sb and the [CuS3] plane play important roles in realizing very low lattice thermal conductivity of these compounds. Except for Cu12Sb4S13, which is known as a good thermoelectric material, the other three compounds showed very poor thermoelectric performance due to their high electrical resistivities. A phase transition at 398 K was found in Cu3SbS3, which makes it unsuitable for applications and attempts to optimize electrical properties of CuSbS2 failed. Different p-type dopants were studied to improve the electrical properties of Cu3SbS4. Both Ge-doping and Sn-doping on Sb sites increased the carrier concentration of Cu3SbS4 significantly. The electrical transport properties were analyzed using SPB model, and a large effective mass of 3.0 me was found for all of the samples. A maximum zT value of 0.69 was obtained at 623 K in 5 mol. % Sn-doped sample which was about 6 times higher than that of undoped sample. The solid-solutions of Cu3SbS4(1-y)Se4y were studied to further improve the thermoelectric properties. The lattice thermal conductivity was reduced in solid-solution due to the local mass contrast and alloying scattering, but there was no further improvement in zT value due to the decrease in Seebeck coefficient. Another solid solution of Cu3Sb1-xBixS4 was studied, but Bi had very low solubility and a second phase was formed instead of forming the solid solution. Future work should focus on reducing the lattice thermal conductivity of Cu3SbS4 without impacting its electrical properties.

This dissertation presents the development of methods based on microfabricated devices for combined structure and thermoelectric characterizations of individual nanowire and thin film materials. These nanostructured materials are being investigated for improving the thermoelectric figure of merit defined as ZT=S²[sigma]T/K, where S is the Seebeck coefficient, [sigma] is the electrical conductivity, K is the thermal conductivity, and T is the absolute temperature. The objective of the work presented in this dissertation is to address the challenges in the measurements of all the three intrinsic thermoelectric properties on the same individual nanowire sample or along the in plane direction of a thin film, and in correlating the measured properties with the crystal structure of the same nanowire or thin film sample. This objective is accomplished by the development of a four-probe thermoelectric measurement procedure based on a micro-device to measure the intrinsic K, [sigma], and S of the same nanowire or thin film and eliminate the contact thermal and electrical resistances from the measured properties. Additionally the device has an etched through hole that facilitates the structural characterization of the sample using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). This measurement method is employed to characterize individual electrodeposited Bi[subscript 1-x]Te[subscript x] nanowires. A method based on annealing the nanowire sample in a forming gas is demonstrated for making electrical contact between the nanowire and the underlying electrodes. The measurement results show that the thermoelectric propertied of the nanowires are sensitive to the crystal quality and impurity doping concentration. The highest ZT found in three nanowires is about 0.3, which is still lower than that of bulk single crystals at the optimum carrier concentration. The lower ZT found in the nanowires is attributed to the high impurity or carrier concentration and defects in the nanowires. The micro-device is further modified to extend its use to characterization of the in-plane thermoelectric properties of thin films. Existing practice for thermoelectric characterization of thin films is obtaining K in the cross plane direction using techniques such as the 3[omega] method or time domain laser thermal reflectance technique whereas the [sigma] and S are usually obtained in the in-plane direction. However, transport properties of nanostructured thin films can be highly anisotropic, making this combination of measurements along different directions unsuitable for obtaining the actual ZT value. Here, the micro-device is used to measure all three thermoelectric properties in the in-plane direction, thus obtaining the in-plane ZT. A procedure based on a nano-manipulator is developed to assemble etched thin film segments on the micro-device. Measurement results of two different types of thin films are presented in this dissertation. The first type is mis-oriented, layered thin films grown by the Modulated Elemental Reactant Technique (MERT). Three different structures of such thin films are characterized, namely WSe₂, W[subscript x](WSe₂)[subscript y] and (PbSe₀.₉₉)[subscript x](WSe₂)[subscript x] superlattice films. All three structures exhibit in-plane K values much higher than their cross-plane K values, with an increased anisotropy compared to bulk single crystals for the case of the WSe₂ film. The increased anisotropy is attributed to the in-plane ordered, cross-plane disordered nature of the mis-oriented, layered structure. While the WSe₂ film is semi-insulating and the W[subscript x](WSe₂)[subscript y] films are metallic, the (PbSe₀.₉₉)[subscript x](WSe₂)[subscript x] films are semiconducting with its power factor (S²[sigma]) greatly improved upon annealing in a Se vapor environment. The second type of thin films is semiconducting InGaAlAs films with and without embedded metallic ErAs nanoparticles. These nanoparticles are used to filter out low energy electrons with the introduction of Schottky barriers so as to increase the power factor and scatter long to mid range phonons and thus suppress K. The in-plane measurements show that both the S and [sigma] increase with increasing temperature because of the electron filtering effect. The films with the nanoparticles exhibited an increase in [sigma] by three orders of magnitude and a decrease in S by only fifty percent compared to the films without, suggesting that the nanoparticles act as dopants within the film. On the other hand, the measured in-plane K shows little difference between the films with and without nanoparticles. This finding is different from those based on published cross-plane thermal conductivity results. / text

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The synthesis of NaxCoO2 by Pechini method (with initial sodium stoichiometry x = 1.0, 0.9, 0.8, and 0.7) was studied for the samples heat-treated in the temperature range from 550 řC to 750 řC. The structure characterization and phase composition was carried out by the powder X-ray diffraction (XRD) analysis. The elementary analysis was done using atomic absorption spectroscopy. From the thermoelectric properties, the Seebeck coefficient was measured for both α- and γ- phase. The Weiss constant was determined for α- and γ- phase by linear regression of 1/χ. The real sodium content in sodium cobaltate phase was found to be independent on initial sodium precursor weight and measurement by PXRD and Seebeck coefficient showed that the sodium content in NaxCoO2 falls in the range from x = 0.65 to 0.75. The magnetization measurements showed presence of spinel Co3O4 impurities in the samples and the analysis of magnetic susceptibility showed unusual high values of the Weiss constant for α- phase in comparison with structurally similar γ- NaxCoO2. Thin film of NaxCoO2 with initial sodium stoichiometry x = 1.0, 0.52, 0.32, and 0.175 was deposited by chemical solution deposition method using spin-coating deposition on a 00l-oriented α-Al2O3 single crystal substrate. The formation and structure characterization of...

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L'incertitude de l'énergie mondiale avec l'augmentation constante de la demande d'énergie déclenche la recherche de technologies de conversion d'énergie à haut rendement. Les dispositifs thermoélectriques (TE) peuvent jouer un rôle très important dans la collecte et la valorisation de l'énergie car ils peuvent être employés pour récupérer la chaleur résiduelle. Par exemple, la quantité de chaleur émise sous forme de déchets par les différents moteurs thermiques est évaluée en centaines de millions de MWh /an.Cette thèse vise à démontrer la faisabilité de fabrication des systèmes de récupération de la chaleur issue des déchets à l'échelle industrielle en utilisant des générateurs thermoélectriques (TE). Les techniques de fabrication proposées sont basées sur l'utilisation de technologies avancées comme le frittage par spark plasma, le broyage, la fusion laser sélective et la technologie de projection thermique. Ces techniques rendent possible l'élaboration de revêtements de matériau thermoélectrique avec des performances thermoélectriques supérieures et une flexibilité forte liées aux choix multiples de tailles, de formes et de matériaux.Nous nous sommes intéressés à l'étude du matériau semi-conducteur ß-FeSi2 car il présente un coefficient de mérite fort dans une plage de température de 300-800oC qui est la température des gaz en sortie de moteur voiture.Les techniques de SLM (Selective Laser Melting), de broyage, de frittage et de frittage flash (SPS) ont été successivement utilisées pour aboutir à l'élaboration de l'alliage ¿-FeSi2. Les revêtements ont ensuite été obtenus par la technique de projection plasma sous basse pression.Concernant le revêtement formé à partir de l'alliage par procédé LPPS, la transformation de phase de la phase cubique -ferrosilicium et de la phase quadratique ¿-Fe2Si5 en phase orthorhombique ß-FeSi2 se produit en obéissant aux réactions péritectique et eutectique. Après recuit sous température et temps appropriés, les revêtements présentent une phase complète ß-FeSi2 sur le substrat céramique.En outre pour une application à grande échelle, il est nécessaire de déposer ce type de revêtement sur un substrat en acier inoxydable et il convient dans ce cas d'utiliser un masque approprié pour fabriquer le dispositif thermoélectrique. / The uncertainty in the global energy with the constant increase in energy demand triggers the search for energyconversion technologies with high efficiency. The thermoeletrical devices (TE) can play a relevant role in thecollection and recovery of energy because they can be used to recover waste heat. For example, the amount of heatemitted as waste by different ombustion engines is evaluated hundreds of millions of MWh / year.This thesis aims to demonstrate the feasibility of anufacturing heat recovery systems from waste on an industrialscale using thermoelectric generators (TE). The proposed manufacturing techniques are based on the use ofadvanced technologies such as spark plasma sintering, crushing, selective laser melting and thermal spraytechnology. These techniques make possible the development of thermoelectric material coatings with superiorthermoelectric performance and high flexibility related to multiple choices of sizes, shapes and materials.The study of semiconductor ß-FeSi2 material was conducted in this goal because it has a strong merit coefficient(ZT) in the temperature range of 300-800°C which is the temperature of the output gas of the cars.Selective Laser Melting, sintering and spark plasma sintering (SPS) were successively used to lead to themanufacture of ¿-FeSi2 alloy. The coatings were then obtained by low pressure plasma spraying.Concerning the coating formed from the alloy, the phase transformation of the cubic phase ¿-ferro-silicon and thetetragonal phase ¿-Fe2Si5 in the orthorhombic phase ß-FeSi2 is produced by obeying the eritectic and eutecticreactions. After annealing under suitable temperature and time, the coatings sprayed on the ceramic bstratepresent a complete phase ß-FeSi2.In view of a large-scale application, it is necessary to spray this type of coating on a stainless steel substrate and inthis case to use a suitable mask for making the appropriate thermoelectric device.

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