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The Magnetic Properties of Permalloy Antidot ArraysNeal, Jeremy R. 07 August 2003 (has links)
No description available.
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Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect MetallizationYu, Lu 12 June 2014 (has links)
No description available.
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Investigating the Effects of Grafting and Chain Stiffness on Nanoconfined Polymers from Molecular Dynamics SimulationWu, Zhenghao 05 June 2018 (has links)
No description available.
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Island nucleation and growth in epitaxial, amorphous, and nanoparticle thin-filmsKryukov, Yevgen A. 19 September 2011 (has links)
No description available.
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GPU Enhanced Simulations of Glancing Angle Deposition of Metal Thin-FilmsLiu, Xuejing 09 July 2012 (has links)
No description available.
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Structure Property Relationships in Multilayered Thin Films: Mechanical and Gas Barrier ApplicationsHerbert, Matthew January 2015 (has links)
No description available.
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Chemical and Electronic Characterization of Copper Indium Gallium Diselenide Thin Film Solar Cells and Correlation of these Characteristics to Solar Cell OperationHetzer, Michael 27 August 2009 (has links)
No description available.
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Specific property analysis of thin-film semiconductors for effective optical logical operationsLiyanage, Chinthaka 30 September 2008 (has links)
No description available.
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Control of Supramolecular Structures of Porphyrin Derivatives in Thin Films / 薄膜中のポルフィリン超分子構造の制御Tomita, Kazutaka 23 March 2022 (has links)
京都大学 / 新制・課程博士 / 博士(理学) / 甲第23729号 / 理博第4819号 / 新制||理||1689(附属図書館) / 京都大学大学院理学研究科化学専攻 / (主査)教授 長谷川 健, 教授 若宮 淳志, 教授 渡邊 一也 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM
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Enhanced Optical/Electrical Conversion in Indium-doped Silicon Thin Films for Applications in Photovoltaic Cells and UV-A DetectorsPaez Capacho, Dixon Javier January 2018 (has links)
Efficient optical-to-electrical conversion is a fundamental requirement of a range of silicon devices such as those which employ photodetection, solid-state-imaging and photovoltaic power generation. This thesis investigates the effects of using indium, a deep-level acceptor in silicon, as a dopant for thin film single crystalline silicon solar cells and UV-A detectors. Indium acts as a p-type dopant in silicon and has been proposed previously as a substitutional lattice defect that would enable sub-band gap transitions as described by the so-called impurity photovoltaic (IPV) effect. The physical mechanisms responsible for operation of the devices presented in this work are described. Models for electrical performance, optical absorbance and device fabrication are used as methods to interpret data and optimize device parameters. Specifically, a two-diode model is used to account for the electrical loss mechanisms within a device, while modeling optical absorption by a multilayer structure consisting of Silicon-On-Insulator (SOI) is approached using a novel multi-wavelength numerical model that describes the reflections and transmissions at each of the device’s layers. Additionally, Technology Computer Aided Design (TCAD) simulations were used to optimize the critical fabrication parameters associated with the ion implantation and thermal annealing techniques used during the device fabrication process.
Selected from multiple devices fabricated during the course of this work, the most efficient solar cells in SOI (2.5 μm thick active layer) exhibited a maximum conversion efficiency of 4.74 % for indium-doped and 4.16 % for boron-doped layers. The most efficient UV-A detector fabricated in SOI (100 nm thick) exhibited a maximum responsivity to 365 nm light of 20 mA/W for indium-doped and 16 mA/W for boron-doped devices. In both types of devices, indium doping consistently resulted in a relative increase in efficiency when compared to equivalently fabricated, boron doped devices, despite experimental carrier decay measurements confirming the action of the indium as a recombination centre. External and internal quantum efficiency measurements confirm a relative enhancement in absorption, for solar cells and detectors doped with indium, which is correlated with the p-type dopant concentration and the ratio of n-type to p-type concentrations. The origin of the enhancement is postulated to be caused by a relaxation of the momentum-space restrictions associated with undoped silicon, a postulate supported by previously reported absorption data. This thesis presents the first comprehensive data from indium doped silicon devices designed for optical-to-electrical conversion. The implications for a range of widely deployed devices may be significant. / Thesis / Doctor of Philosophy (PhD)
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