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Devices, materials and fabrication processes for integrated micro-systems /Karnik, Sooraj V., January 2002 (has links)
Thesis (Ph. D.)--Lehigh University, 2003. / Includes vita. Includes bibliographical references (leaves 110-117).
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Formation of low temperature silicon dioxide films using chemical vapor deposition /Chen, Hsiao-Hui. January 1991 (has links)
Thesis (M.S.)--Rochester Institute of Technology, 1991. / Typescript. Includes bibliographical references (leaves 165-168).
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Development of bulk-scale and thin-film magnetostrictive sensorLiang, Cai, Prorok, Barton Charles. January 2007 (has links) (PDF)
Dissertation (Ph.D.)--Auburn University, 2007. / Abstract. Vita. Includes bibliographic references (p.202-231).
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Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices /Lee, Jinwoo, January 2008 (has links)
Thesis (Ph. D.)--University of Oregon, 2008. / Typescript. Includes vita and abstract. Includes bibliographical references (leaves 112-117). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
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Optimization of the structural properties of selenized metallic alloys28 October 2008 (has links)
M.Sc. / CuInSe2/CdS/ZnO heterojunction solar cells are currently one of the most promising technologies for the production of economically viable energy in the form of electricity. The key component of this thin film solar cell device is the chalcopyrite absorber film. CuInSe2 and its related alloys such as Cu(In,Ga)Se2 have been deposited by a number of techniques, including methods which have been demonstrated to be scalable to mass production volumes. In this study attention was focused on (i) developing a relatively simple deposition technology for the production of chalcopyrite absorber films, (ii) detailed characterization of the semiconductor thin films in terms of the experimental parameters and (iii) fabrication of completed CuInSe2/CdS/ZnO solar cell devices. Metallic precursors comprising of copper and indium were deposited with electron-beam evaporation. The number of elemental layers in the precursor stack as well as the substrate temperature was optimized in order to produce metallic alloys with optimum structural properties. These precursors were subsequently reacted in vacuum to elemental Se vapour or to H2Se/Ar at atmospheric pressure in a separate diffusion reactor. In order to investigate the growth kinetics of the respective processes, the precursors were reacted to the Se in the temperature range between 350°C and 450°C. The structural features (morphology, presence of crystalline phases and bulk compositional properties) of the respective films were compared and correlated against the growth parameters. From this systematic study, optimum growth parameters were determined for the production of completed solar cell devices. / Professor V. Alberts
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Structural and composition analysis of high Tc superconducting YBa2Cu3O7-x thin films on spinel.January 1992 (has links)
by Siu Wing Hon. / On t.p. T"c", "2", "3", and "7-x" are subscripts following "superconducting" in the title. / Parallel title in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1992. / Includes bibliographical references (leaves [79]-[80]). / Acknowledgement --- p.i / Abstract --- p.ii / Table of Content --- p.iii / Chapter Chapter 1 : --- Introduction / Chapter Chapter 2 : --- Growth of YBCO on Spinel / Chapter 2-1. --- Why Spinel --- p.2-1 / Chapter 2-2. --- Film Deposition Technique --- p.2-3 / Chapter 2-2.1 --- Magnetron Sputtering Technique --- p.2-3 / Chapter 2-2.2 --- Pulsed Laser Ablation --- p.2-4 / Chapter Chapter 3 : --- Composition Analysis by XRF / Chapter 3-1. --- Introduction --- p.3-1 / Chapter 3-2. --- Minimum Penetration Depth of EDX for YBCO film --- p.3-5 / Chapter 3-3. --- Thin Film Method and Thin Film Limit --- p.3-9 / Chapter 3-4. --- XRF Setup --- p.3-14 / Chapter 3-5. --- Calibration --- p.3-14 / Chapter 3-5.1 --- Chemical method --- p.3-18 / Chapter 3-5.2 --- Absorption Factor --- p.3-18 / Chapter 3-5.3 --- Diffusion Rate --- p.3-22 / Chapter 3-5.4 --- Justification of Thin Film Method --- p.3-22 / Chapter 3-5.5 --- Result of Calibration by Chemical Method --- p.3-24 / Chapter 3-5.6 --- Calibration by Rutherford Backscattering --- p.3-28 / Chapter 3-6. --- Discussion on XRF --- p.3-31 / Chapter 3-6.1 --- Effect of diffraction line by substrate on X-ray spectrum --- p.3-31 / Chapter 3-6.2 --- Stability of X-ray power supply and its influence on spectrum --- p.3-34 / Chapter Chapter 4 : --- Structural Analysis and Rapid Thermal Annealing / Chapter 4-1. --- XRD Setup --- p.4-1 / Chapter 4-2. --- XRD Analysis --- p.4-2 / Chapter 4-2.1 --- θ-2θ Scan --- p.4-1 / Chapter 4-2.2 --- Phi Scan --- p.4-3 / Chapter 4-2.3 --- Study of Diffraction Peak --- p.4-9 / Chapter 4-3. --- RTA and its influence on structure --- p.4-11 / Chapter 4-3.1 --- RTA Setup --- p.4-13 / Chapter 4-3.2 --- Structural Improvement by RTA --- p.4-13 / Chapter Chapter 5 : --- Conclusion --- p.5-1 / Chapter Appendix : A. --- Mathematical Derivation of Thin Film Limit / Chapter B. --- Powder Diffraction Patterns of YBCO system / Reference
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Studies of (La,Ca)MnO[sigma] thin film with giant magnetoresistance prepared by facing target sputtering technique.January 1996 (has links)
by Xianting Zeng. / Publication date from spine. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references (leaves 165-173). / ABSTRACT --- p.iii / ACKNOWLEDGEMENT --- p.v / TABLE OF CONTENTS --- p.vii / LIST OF FIGURES --- p.x / LIST OF TABLES --- p.xiv / Chapter I. --- Introduction --- p.1 / Chapter 1.1 --- Previous research on magnetoresistance --- p.1 / Chapter 1.2 --- Preparation methods --- p.12 / Chapter 1.3 --- Application prospects and existing problems of GMR materials --- p.15 / Chapter 1.4 --- Main contents in this thesis --- p.17 / Chapter II. --- The facing-target sputtering technique --- p.20 / Chapter 2.1 --- Brief description of FTS method --- p.20 / Chapter 2.2 --- Considerations and studies about the deposition conditions of La-Ca-Mn-O thin films --- p.26 / Chapter 2.2.1 --- Substrate materials --- p.26 / Chapter 2.2.1.1 --- Mismatch of lattice constant --- p.26 / Chapter 2.2.1.2 --- Thermal expansion coefficient --- p.31 / Chapter 2.2.1.3 --- Cleaning and surface treatment --- p.33 / Chapter 2.2.2 --- Substrate temperature --- p.35 / Chapter 2.2.3 --- Discharge pressure and sputtering power --- p.36 / Chapter 2.2.4 --- Oxygen content and critical thickness --- p.36 / Chapter 2.3 --- Fabrication and characteristics of La-Ca-Mn-O target materials --- p.42 / Chapter 3.2.1 --- Fabrication process --- p.42 / Chapter 2.3.2 --- Characterizations --- p.46 / Chapter 2.3.2.1 --- Structural parameters --- p.46 / Chapter 2.3.2.2 --- Electrical and magnetic properties --- p.51 / Chapter III. --- Growth of La-Ca-Mn-O thin films with c-axis orientation --- p.53 / Chapter 3.1 --- Thin film deposition --- p.53 / Chapter 3.2 --- Characterization methods --- p.53 / Chapter 3.2.1 --- XRD --- p.54 / Chapter 3.2.2 --- SEM/EDX --- p.54 / Chapter 3.2.3 --- VSM --- p.57 / Chapter 3.3 --- Results and discussions --- p.58 / Chapter 3.3.1 --- Structures of the films grown on (100) MgO --- p.58 / Chapter 3.3.2 --- Resistance and magnetoresistance --- p.62 / Chapter 3.3.3 --- Annealing effect --- p.69 / Chapter 3.4.3.4 --- Magnetization --- p.71 / Chapter 3.4 --- Conclusion --- p.75 / Chapter IV. --- Epitaxial growth of single crystal LCMO thin films with a-axis orientation --- p.77 / Chapter 4.1 --- Motivation and thin film deposition --- p.77 / Chapter 4.2 --- Characterizations --- p.79 / Chapter 4.2.1 --- DCD/GID --- p.79 / Chapter 4.2.2 --- Laue diffractometry --- p.84 / Chapter 4.3 --- Results and discussions --- p.85 / Chapter 4.4 --- Conclusion --- p.91 / Chapter V. --- Crystal growth mechanisms in the deposition of LCMO thin films --- p.93 / Chapter 5.1 --- Introduction --- p.93 / Chapter 5.2 --- AFM/STM --- p.96 / Chapter 5.3 --- Step-flow growth --- p.100 / Chapter 5.4 --- Roughening growth --- p.107 / Chapter 5.5 --- 3-D growth --- p.111 / Chapter 5.6 --- Conclusion --- p.119 / Chapter VI. --- Anisotropy properties of epitaxial LCMO thin films and colossal low field magnetoresistance --- p.122 / Chapter 6.1 --- Introduction --- p.122 / Chapter 6.2 --- Experiments --- p.124 / Chapter 6.3 --- Results and discussions --- p.125 / Chapter 6.3.1 --- Morphology --- p.125 / Chapter 6.3.2 --- Transport properties --- p.125 / Chapter 6.4 --- Conclusion --- p.134 / Chapter VII. --- Optical response of epitaxial LCMO thin films --- p.135 / Chapter 7.1 --- Introduction --- p.135 / Chapter 7.2 --- Experimental procedures --- p.138 / Chapter 7.2.1 --- Sample preparation --- p.138 / Chapter 7.2.2 --- Measurements of the optical spectra --- p.140 / Chapter 7.2.3 --- Measurements of the optical response --- p.140 / Chapter 7.3 --- Experimental results and discussions --- p.142 / Chapter 7.3.1 --- Optical spectra --- p.142 / Chapter 7.3.2 --- Optical response characteristics --- p.145 / Chapter 7.3.3 --- 1/f noise in LCMO materials --- p.148 / Chapter 7.4 --- Potential applications --- p.154 / Chapter 7.5 --- Conclusion --- p.156 / Chapter VIII. --- Conclusion and further studies --- p.158 / Chapter 8.1 --- Conclusion --- p.158 / Chapter 8.2 --- Further studies --- p.161 / References --- p.165
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Investigation of the dimensional stability of an ultra-thin film gas/liquid contactorPeterson, Jerrod P. 10 June 2004 (has links)
Graduation date: 2005
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Manufacture and characterization of novel ACTFEL materials and devicesBender, Jeffrey P. 28 July 2003 (has links)
Graduation date: 2004
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Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devicesHitt, John C. 15 August 1997 (has links)
Graduation date: 1998
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