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The objective of the current work has been to develop a system which will allow continuous monitoring of areal mass density, lateral stress, and temperature during a process with real time presentation of results making possible either manual or automated control of the process. The system uses three quartz resonators of different crystallographic cuts (AT cut, BT cut and SC cut) in the same environment. The development of an algorithm to solve a system of equations representing a complete representation of the temperature characteristics of the three resonators is presented. This is followed by an analysis of the potential accuracy of the system and the limitations imposed by the assumptions made in the mathematical models of the system. Sputtering yields were verified using Rutherford backscattering analysis. Experimental apparatus including the physical mounting of the resonators in an experimental environment, details of the oscillator circuitry and frequency counter, and use of a personal computer for data acquisition and control are described. The results presented show, in addition to the mass change and lateral stress build-up which occur when sputtering a gold film with an argon ion beam, the radiation induced temperature rise and the radiation induced stress caused by temperature gradients. An experiment using beams of Sb+ at 50keV and Sb2+ at 100keV has been used to demonstrate the enhancement of sputtering yield that occurs when Au films are bombarded with monomers and dimers of Sb at the same energy per atom. Results are compared with simulations using both the TRIM program and molecular dynamics code.

Characterization of local boiling trends, in addition to the typically reported area-averaged trends, is essential for the robust design and implementation of phase change technologies to sensitive heat transfer applications such as electronics cooling. Obtaining the values of heat fluxes corresponding to locally varying surface temperatures has been a challenge limiting most investigations to area-averaged results. This thesis illustrates the importance of a spatially local heat transfer analysis during boiling. Pool and submerged jet impingement boiling scenarios on a silicon surface are considered at the macroscale (27.5 mm heater with multiple nucleation sites) and microscale (1000 ��m heater for isolated bubble generation), by the use of two thin film serpentine heater geometries. The macroscale heater highlights the effect of spatial variations in imposed heat flux on boiling heat transfer with a circumferentially uniform but radially non-uniform heat flux distribution. The microscale heater simulates a local hot-spot for spot cooling on an electronic device. Spatial variation in boiling heat transfer and bubble dynamics with and without a jet flow are documented using thin film voltage sensors along with qualitative and quantitative high speed imaging and infra-red thermography. Unique to this study is the documentation of local boiling curves for different radial locations on the heat transfer surface and their comparison with the corresponding area-averaged representations. It is shown here that sectionally averaged representations of boiling curves over regions of like-imposed heat flux can substantially simplify the interpretation of data while retaining important information of the local variations in heat transfer. The radial influence of the convective jet flow on the bubble dynamics and boiling heat transfer is assessed for a single circular submerged jet configuration. Varied parameters include jet exit Reynolds numbers, nozzle geometry, test fluid (deionized water and FC-72), fluid subcooling and the supplied heat flux. Distinct modifications of the surface temperature distribution imposed by the impinging jet flow are highlighted by comparing radial temperature profiles during pool and jet impingement boiling. It is demonstrated that in contrast with pool boiling, thermal overshoots during jet impingement boiling for a highly wetting fluid like FC-72 are highest in regions farthest from the impingement point. The effect of jet inertia on bubble departure characteristics are compared with pool boiling under subcooled conditions for FC-72. Qualitative high speed visualization indicates the presence of two modes of bubble generation during jet impingement boiling (a) bubble departure from the surface and (b) bubble separation from the source resulting in sliding bubbles over the surface. The effect of jet flow on bubble entrainment is depicted. Quantitative results indicate that in general departure diameters for pool and jet impingement boiling increase and plateau at a maximum value with increasing power input while no notable trends were observed in the corresponding departure frequencies. The largest departure diameters for jet impingement boiling at fixed fluid subcoolings of 10��C and 20��C were found to be smaller than that for the corresponding pool boiling test by a factor of 1.6 and 2.3, respectively. / Graduation date: 2013

The behaviour of a free-standing thin film differs from that of a film surface-bonded or embedded due to the boundary constraints. A general dearth of analytical models, in regard to prediction of the operational competence of a constrained Piezoelectric thin film, prevails. In conventional design of miniaturized thin film devices, several non classical effects, for instance the effect of boundary constraints, are not considered. To warrant the design and performance optimisation of thin film sensors, such effect must be taken into account in a forethoughtful manner. This thesis is an attempt to achieve such optimisation through modeling of thin films. The coupled problem of a film on a substrate is solved semi-analytically in theoretical cases; and by finite element analysis in realistic cases for damage identification in the host structure. We first propose a two-dimensional analytical model of a constrained Piezoelectric thin film embedded in a host. Analytical expressions of capacitance and voltage across the electrodes are obtained by assuming first order shear deformation across the film thickness. The bonding layer between the film and the substrate, which is assumed to be an equivalent single layer including electrodes, insulation layer, adhesive layer etc., is modeled by taking into account its viscoelastic property. Residual stress is incorporated in the constitutive model through equivalent residual strain. Simulations on 10 m thick PVDF and 100 mPZT films are conducted. They illustrate the dependence of voltage response and capacitance on the applied stress, as well as on the residual stress. A maximum percentage variation in capacitance, as compared to the conventional estimate, is about 2% in a PVDF film and +75% to-65% in a PZT film for various combinations of tensile stresses applied at the ends of the film. Effect of residual stress is also exemplified via comparative response of a 1 m PZT film deposited on Pt/Ti/Si(0 0 1), with and without residual stress. For this case, an almost +50% increase in the voltage and an equivalent drop in the capacitance is observed. Next, we look into the voltage response profile of this model by employing it as a sensor to identify a finite mode I and mode II sub-surface cracks in a finite size host. To model the embedded crack, additional perturbation functions in the displacement field due to linear elastic crack tips in an infinite solid under plane strain condition are introduced to accommodate the stress free conditions at its surfaces. The film model requires the interfacial displacement and traction conditions, which are obtained from the analysis of the host. The combined analysis of the film and crack models brings forth the voltage gradient along the film span as a direct indicator of the location of crack in the axial direction, whereas the voltage magnitude represents the size of the crack. Following this analysis, a quasi three-dimensional(3-D) model of a Piezoelectric thin film surface-bonded to the host structure is proposed. With due consideration of restriction on the thickness of the film, here the model is based on a reduced 3-D continuum mechanics approach. The displacement field in the film is assumed to vary according to the third-order shear deformation theory; and the electrical and mechanical boundary conditions on the surfaces of the film are accommodated in a consistent manner. The formulation yields a governing inhomogeneous system of second-order Partial Differential Equations(PDEs), which is dependent on the displacement field at the film-host interface through force terms. Semi-analytical expressions of potential difference and capacitance are obtained. This system is solved numerically for two unknown rotations about X and Y axes of the film by finite element method. A maximum variation of about 2.5% is obtained in the capacitance of a 10 m PVDF film, as compared to its conventional estimate. The operational performance of this model is assessed in terms of its voltage response over the film area for various displacement fields. Conformation of this response to the input displacement field attests to its mathematical integrity. Next, we ascertain the versatility of this model in its role as a sensor for Structural Health Monitoring. To deal with cracks in the host plate, finite size rectangular surfaces are introduced as crack faces. The film domain and the host domain are discretized with an a posteriori h-refinement strategy and compatible interfacial nodes at the film-host interface via finite element interpolation. The resulting coupled problem is solved by static finite element analysis. The nature of the voltage pattern over the film surface is peculiar to the mode of crack, and is a qualitative portrayal of its presence. To correlate the electric potential(voltage) –a distributed parameter – to the geometry and orientation of the crack, as well as to quantify it, electrostatic measures in terms of integrated potential difference and its spatial gradients on the film surface are proffered. The numerical implications of these measures are elicited through simulation results of various crack sizes in damaged and healthy hosts under identical conditions of stress and boundary. The pattern of these measures in a damaged host becomes oscillatory as compared to straight lines observed in a healthy host. Furthermore, the reduced 3-D model is extended to perform dynamic analysis with the inclusion of inertial terms in the governing equilibrium equations. Subsequently, the acceleration terms appear in the governing inhomogeneous system of PDEs in the force terms. Finite element analyses of this extended film model on an isotropic beam with surface and sub-surface cracks, and on a composite plate with delamination, are then performed in the time domain. In all cases, an excellent conformation of the voltage profile at any point in the film domain to the velocity profile at the corresponding point in the film-host interface is observed. Again, to quantify the extent of damage in the host, we proffer electrical measures based on the Lpnorm, of second order, of the voltage and its directional derivatives. We exemplify the numerical implications of these measures in the time domain through sensitivity analysis in regard to the defected areas, and their region of occurrence relative to the film sensor. The response of the film model educes that the relatively flat curves after the first incident pulse in a healthy structure shoots off to a monotonic pattern in damaged hosts. The measures depict high degree of sensitivity in regard to the variation in the area of damage of any nature. An apposition of the static and dynamic analyses is elaborated towards the end of this dissertation. It proves to be very insightful in the damage assessment of the host structure, for it shows the utility of the dynamic model to sense the location of the damage occurrence, whereas a more in-depth assessment on its nature and mode of the crack would demand a static analysis in its proximal regions. To sum up, in light of these models and the proposed measures, this thesis establishes salient justifications pertaining to their pragmatic significance. We believe that these results represent an important contribution towards the ongoing research on understanding the role of boundary constraints in mechanically thin Piezoelectric films.

Sensors is one of the major areas of current research. Thin film micro/nano sensors are gaining attention worldwide, as there is necessity of miniaturization. There are varieties of sensors available by utilizing different materials in bulk and thin film form for measuring parameters like temperature, pressure, flow, humidity etc. Apart from these, there are various sensors available to measure impact force. Impact sensor offers potential application possibilities in robotics, aerospace, structural & mechanical engineering and related areas. Many physical principles have been explored for the realization of impact sensor. The present thesis reports the efforts made in developing impact sensor using piezoelectric thin film. The necessary brief background information on impact sensors is presented in Chapter 1. This includes the description of available literature on impact sensors and their probable applications. In Chapter 2, a review of the various techniques such as thin film deposition techniques, film thickness measurement techniques, thin film characterization techniques, used in our work are explained in detail. Chapter 3 explains the direct and indirect methods of characterization used for confirming the piezoelectric property of zinc oxide thin films. The detailed experimental work carried out in realizing the impact sensor using piezoelectric thin films is presented in chapter 4. This includes design of the sensor, calibration setup used & the procedure followed and results obtained. Finally, we present the summary of the work carried out in the thesis, conclusions arrived at and the scope for carrying out further work in the direction of making the sensor more efficient.