Zhou Wenli. / "October 2003." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2003. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

This thesis investigates performance, identity, representation and shame in documentary filmmaking. Identities that are performed and mediated through a relationship between filmmaker and participant are examined with detailed reference to two decades of my own practice. A reflexive, feminist approach engages my own films - and the relationships that produced them - in analysis of the ethical potholes and emotional challenges in representing others on TV. The trigger for this research was the furiously angry reaction of the One Direction fandom to my representation of them in Crazy About One Direction (Channel 4, 2013). This offered an opportunity to investigate the potential for shame in documentary; a loud and clear case study of filmed participants using social media to contest their image on screen. In the space between documentary confession and the reception of a story by the audience, a dangerous moment comes, in which shame can be received, perceived, projected, internalised or imagined. The point of this research is to offer to existing documentary theory a practitioner's understanding of the processes which produce shame and to establish for documentary filmmakers some practical ways to resist and prepare against the rupture in identity that representation can cause those they film. Engaging both theory and practice in pursuit of the same research questions, I make a self-reflexive investigation into the ethics, affect and impact of representing others, employing the mediums and methods of fans to answer their complaints. All the films, artwork, documentation of the installation, sources, written work, appendices and past documentaries referred to in this thesis can be best experienced online at https://daisy-asquith-xdrf.squarespace.com, the website hosting this PhD, but are also provided on the accompanying USB drive.

by Man Wah-Kit. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 177-180). / LIST OF FIGURES / LIST OF TABLES / abstract --- p.1 / Chapter 1. --- introduction --- p.3 / Chapter 2. --- fabrication process / Chapter 2-1 --- INTRODUCTION --- p.7 / Chapter 2-2 --- PROCESS DEVELOPMENT --- p.8 / Chapter 2-3 --- FABRICATION PROCEDURES FOR TIN FILMS --- p.10 / Chapter 2-4 --- FABRICATION PROCEDURES FOR TIN OXIDE FILMS --- p.14 / Chapter 2-5 --- FABRICATION THEORY --- p.21 / Chapter 2-6 --- OXYGEN ION IMPLANTATION OF TIN FILMS --- p.24 / Chapter 3. --- structural characterization / Chapter 3-1 --- INTRODUCTION --- p.30 / Chapter 3-2 --- MICROSTRUCTURE / Chapter 3-2-1 --- SOME RELATED THEORIES OF GRAIN GROWTH / Chapter (1) --- Classical Theory of Grain Growth --- p.30 / Chapter (2) --- Hillock Growth --- p.31 / Chapter (3) --- Dislocation Creep Theory --- p.33 / Chapter (4) --- Biaxial Stress in Thin Films --- p.35 / Chapter (5) --- Surface Cluster Growth --- p.37 / Chapter 3-3 --- EXPERIMENTATION AND RESULTS / Chapter 3-3-1 --- MICROSTRUCTURAL ANALYSIS UNDER OPTICAL MICROSCOPE --- p.39 / Chapter 3-3-2 --- THE STRESS AND HILLOCK HEIGHT ANALYSIS OF TIN OXIDE FILMS --- p.48 / Chapter 3-3-3 --- MICROSTRUCTURAL ANALYSIS BY MEANS OF ATOMIC FORCE MICROSCOPE (AFM) --- p.52 / Chapter 3-3-4 --- MICROSTRUCTURAL ANALYSIS BY X-RAY DIFFRACTION --- p.69 / Chapter 3-3-5 --- SURFACE ANALYSIS BY MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY / Chapter (1) --- Introduction --- p.73 / Chapter (2) --- Basic Theory --- p.73 / Chapter (3) --- Experimentation And Results --- p.75 / Chapter 3-3-6 --- SURFACE STUDY OF ION IMPLANTED TIN OXIDE FILMS / Chapter (1) --- Experimental Results --- p.82 / Chapter 3-4 --- DISCUSSION / Chapter 3-4-1 --- QUALITATIVE ANALYSIS OF MICROSTRUCTURE WITH THE OPTICAL MICROSCOPE --- p.88 / Chapter 3-4-2 --- QUALITATIVE ANALYSIS OF MICROSTRUCTURE WITH SEM AND AFM / Chapter (1) --- Grain Growth of Tin Oxide Films --- p.89 / Chapter (2) --- Dependence of Grain Size on Deposition Rate --- p.91 / Chapter (3) --- Dependence of Grain Size on Film Thickness --- p.92 / Chapter (4) --- Dependence of Grain Size on Substrate Temperature --- p.92 / Chapter (5) --- Origin of Hillock Growth of Tin Oxide Films --- p.93 / Chapter 3-4-3 --- FILM COMPOSITIONAL ANALYSIS WITH X-RAY DIFFRACTION --- p.95 / Chapter 3-4-4 --- SURFACE ANALYSIS WITH X-RAY PHOTOELECTRON SPECTROSCOPY …… --- p.95 / Chapter 3-4-5 --- SURFACE ANALYSIS OF OXYGEN IMPLANTED TIN FILMS --- p.96 / Chapter 4. --- OPTICAL CHARACTERIZATION / Chapter 4-1 --- INTRODUCTION --- p.98 / Chapter 4-2 --- THEORY / Chapter (1) --- Free Electron Model --- p.99 / Chapter (2) --- Effect of Film Thickness --- p.100 / Chapter (3) --- Effect of Oxygen Contents --- p.101 / Chapter (4) --- Electron-Lattice Interaction and Bandgap Studies --- p.102 / Chapter 4-3 --- EXPERIMENTATION AND RESULTS --- p.105 / Chapter 4-4 --- DISCUSSION / Chapter 4-4-1 --- BANDGAP STUDIES FOR TIN OXIDE FILMS WITH DIFFERENT DEPOSITION CONDITIONS / Chapter (1) --- Variation of Film Thickness --- p.122 / Chapter (2) --- Film Appearance --- p.123 / Chapter (3) --- Variation of Substrate Temperature --- p.123 / Chapter (4) --- Variation of Oxidation Conditions --- p.123 / Chapter 5. --- ELECTRICAL CHARACTERIZATION / Chapter 5-1 --- INTRODUCTION --- p.126 / Chapter 5-2 --- RELATED THEORY / Chapter 5-2-1 --- CURRENT-VOLTAGE (I-V) CHARACTERISTICS --- p.127 / Chapter 5-2-2 --- CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS --- p.131 / Chapter 5-2-3 --- RELATION OF ELECTRICAL TO STRUCTURAL PROPERTIES / Chapter (A) --- Effects of Deposition Conditions --- p.133 / Chapter (B) --- Effects of Grain Boundaries --- p.133 / Chapter (C) --- Effects of Ionic Impurities --- p.134 / Chapter (D) --- Effects of The Interface Properties --- p.134 / Chapter 5-2-4 --- MEASURING TECHNIQUES / Chapter (A) --- I-V Measurment of Tin Oxide on a Silicon Substrate --- p.136 / Chapter (B) --- C-V Measurement of Tin Oxide Films on Silicon Substrates --- p.137 / Chapter (C) --- Electrical Measurement of Tin Oxide Films on a Quartz Substrate --- p.137 / Chapter 5-3 --- EXPERIMENTATION --- p.138 / Chapter 5-4 --- RESULTS --- p.141 / Chapter 5-5 --- DISCUSSION / Chapter 5-5-1 --- Analysis of the Conduction Mechanism for Sn02/Si n-p Heterojunctions --- p.161 / Chapter 5-5-2 --- Analysis of the Conduction Mechanism for Sn02/Si n-n Heterojunctions --- p.162 / Chapter 5-5-3 --- Effect on the Conduction Mechanisms of Film Thickness --- p.164 / Chapter 5-5-4 --- Effect on the Conduction Mechanisms of Oxidation Time --- p.166 / Chapter 5-5-5 --- Interfacial Properties of SnOx/Si Heterojunctions --- p.166 / Chapter 5-5-6 --- Electrical Properties of SnOx Films on Quartz / Chapter (1) --- Dependence of Film Conductivity on Measuring Temperatures --- p.168 / Chapter (2) --- Dependence of Film Conductivity on Oxidation Time --- p.168 / Chapter (3) --- Dependence of Film Conductivity on Oxidation Temperature --- p.169 / Chapter (4) --- Invariance of Film Conductivity at Some Certain Measuring Temperatures --- p.170 / Chapter (5) --- Activation Energy of Sn02 Films on Quartz --- p.170 / Chapter 6. --- CONCLUSIONS --- p.172 / Chapter 7. --- FUTURE WORKS --- p.175 / Chapter 8. --- REFERENCES --- p.177 / Chapter 9. --- APPENDICES / Chapter 9-1 --- APPENDIX A List of photos --- p.181 / Chapter 9-2 --- APPENDIX B (1) ED AX results for some selected regions on samples with hillocks --- p.182 / Chapter (2) --- Relations between mean surface roughness and oxidation conditions --- p.185 / Chapter (3) --- XPS original data and typical XPS spectra for vacuum- evaporated SnO2 thin film --- p.186 / Chapter 9-3 --- "APPENDIX C Variations of optical parameters, refractive index n and extinction coefficient k in visible region with different oxidation conditions" --- p.189 / Chapter 9-4 --- APPENDIX D Electrical results for Sn02/Si heterojunction s --- p.191 / Chapter 9-5 --- APPENDIX E Calculations of band diagram for Sn02/Si heterojunctions --- p.194 / Chapter 9-6 --- APPENDIX F Resistivity versus impurity concentration for silicon at 300K --- p.196

Thesis (M.S.V.S.)--Massachusetts Institute of Technology, Dept. of Architecture, 1979. / Includes index. / The considerations, potential and limit ations of very short films as exemplified by the production of thirty- eight Mini-Documentaries for the Aspen Movie Map Project. The films are included on videotape. / by Marek Zalewski. / M.S.V.S.

Thesis (M.S.V.S.)--Massachusetts Institute of Technology, Dept. of Architecture, 1980. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ROTCH. / Includes bibliographical references. / Making an unscripted documentary (cinema verite) film is a kind of exploration into uncharted territory. It was my experience in making "Marv Cutler and the Little Prince of Rock" that preconceptions in shooting a scene were rarely realized. The footage returned by the lab, having been shot by me in a state of instant surprise, often had a puzzle quality which would then be reworked into a logical scene which was usually a restructuring, rather than a reporting of the event. Thus the film acquired a shape molded by feasibility, logistics, and accessibility in shooting. Conclusions are avoided; I strive instead for evocative scenes which suggest the complexity of real life. / by Carolyn Swartz. / M.S.V.S.

Lee, Kin Hang = (La₀.₆₇Sr₀.₃₃MnO₃/La₀.₄₀Ca₀.₆₀MnO₃)多層薄膜的磁致電阻特性 / 李建恆. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references. / Abstracts in English and Chinese. / Lee, Kin Hang = (La₀.₆₇Sr₀.₃₃MnO₃/La₀.₄₀Ca₀.₆₀MnO₃) duo ceng bo mo de ci zhi dian zu te xing / Li Jianheng. / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Review of Magnetoresistance --- p.1 / Chapter 1.2 --- Giant magnetoresistance (GMR) --- p.4 / Chapter 1.3 --- Colossal magnetoresistance (CMR) and rare earth manganites --- p.6 / Chapter 1.3.1 --- Tolerance factor in perovskite structure --- p.8 / Chapter 1.3.2 --- Electronic structure and magnetic exchange mechanism --- p.10 / Chapter 1.3.3 --- Jahn-Teller (JT) distortion --- p.13 / Chapter 1.3.4 --- Magnetic and electronic phase diagram --- p.15 / Chapter 1.3.5 --- Charge ordering (CO) effect --- p.18 / Chapter 1.3.6 --- Percolation in a phase-separated state --- p.19 / Chapter 1.4 --- Phase separation at the interfaces in thin films --- p.24 / Chapter 1.5 --- Our motivation --- p.26 / Chapter 1.6 --- Review of manganite multilayer system --- p.27 / Chapter 1.7 --- Scope of this thesis --- p.34 / References --- p.35 / Chapter Chapter 2 --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.39 / Chapter 2.1.1 --- Facing target sputtering (FTS) --- p.40 / Chapter 2.1.2 --- Vacuum system --- p.43 / Chapter 2.2 --- Characterization --- p.45 / Chapter 2.2.1 --- α-step profilometer --- p.45 / Chapter 2.2.2 --- X-ray diffraction (XRD) --- p.45 / Chapter 2.2.3 --- Resistance measurement --- p.48 / Reference --- p.50 / Chapter Chapter 3 --- Epitaxial growth and characterization of single layer thin films / Chapter 3.1 --- Introduction --- p.51 / Chapter 3.2 --- Fabrication of the sputtering targets --- p.51 / Chapter 3.3 --- Epitaxial growth of single layer thin films --- p.52 / Chapter 3.3.1 --- Substrate materials --- p.52 / Chapter 3.3.2 --- Review of deposition conditions of our group with FTS system --- p.54 / Chapter 3.3.3 --- Substrate temperature --- p.57 / Chapter 3.3.4. --- Target-to-target distance and sputtering power --- p.58 / Chapter 3.3.5 --- Deposition procedures --- p.59 / Chapter 3.3 --- Characterization of single layer thin films --- p.60 / References --- p.64 / Chapter Chapter 4 --- La0.67Sr0.33MnO3/La0.40Ca0.60MnO3 multilayers / Chapter 4.1 --- Sample preparation --- p.65 / Chapter 4.2 --- As-grown multilayers --- p.69 / Chapter 4.2.1 --- Structural characterization of as-grown samples --- p.69 / Chapter 4.2.2 --- Transport properties of as-grown samples --- p.80 / Chapter 4.2.2.1 --- The effect of ts for fixed tc and the effect of tc for fixed ts --- p.83 / Chapter 4.2.2.2 --- The effect of thin La0.40Ca0.60MnO3 spacer layers --- p.92 / Chapter 4.2.2.3 --- The effect of fixed bilayer thickness --- p.94 / Chapter 4.2.2.4 --- The effect of ts for fixed volume fraction (tc / ts) --- p.97 / Chapter 4.2.2.5 --- The sample without M-I transition --- p.101 / Chapter 4.3 --- Discussion --- p.103 / References --- p.108 / Chapter Chapter 5 --- Conclusion --- p.110 / Chapter 5.1 --- Conclusion --- p.110 / Chapter 5.2 --- Future outlook --- p.112 / References --- p.114

A Langmuir film is a molecularly thin fluid layer on the surface of a subfluid. When dipole dipole forces are negligible, bounded films relax to energy minimizing circular domains. We investigate numerically the case where dipole dipole interactions are strong enough to deform the domain into highly distorted labyrinth type patterns. Our numerical method is designed to achieve higher accuracy and better stability than previous work and exploits an analytic formulation that removes a singularity in the dipole dipole forces without resorting to a small cutoff parameter. We calculate the relaxation rates for a linearly perturbed circular domain, and we verify them numerically. We are also able to numerically reproduce experimentally observed circle to dogbone transitions with minimal area loss.

Thin layer deposits of cadmium sulfide (CdS) for photovoltaic purposes can be made by cathodic deposition from a nonaqueous solution. There were numerous parameters that were controlled in this electro-deposition. Several of these parameters, including temperature, current density, reactant concentrations and impurity level doping, were studied and optimized. The mechanism of this deposition process is not fully understood, mainly due to the complex chemistry of sulfur. Part of this complexity is the presence of S(,6) and S(,7) along with the major component of S(,8) in sulfur solutions. At 90(DEGREES), these minor species constitute 2% of the total sulfur. Electrochemical studies were made on these species with gold, porous carbon and CdS single crystal electrodes. These showed that S(,6) and S(,7) are electrochemically more reactive than S(,8). Furthermore, they may be the main reacting species in CdS formation, even though they are present at such low levels. Adsorption of all species of sulfur was noted at room temperature and this adsorption may be causing excess sulfur to be incorporated into the CdS deposits. There has been an important development in the measurement of impurity levels of semiconductors called electrochemical photocapacitance spectroscopy. It can be used to analyze impurity levels in a wide variety of semiconductors by shining subband gap light on the semiconductor in a photoelectrochemical cell while measuring the capacitance on the surface. Interpretation of these spectra has previously been qualitative. A quantitative model was developed here along with a computer program utilizing this interpretation. Several types of semiconductors were analyzed by this technique, including these CdS deposits which showed impurity levels that may be due to excess sulfur. Other types of compound semiconductors can also be made by this cathodic deposition. It is hoped that the information gathered here can be used to improve these other semiconductor depositions as well as CdS.

No description available.

Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs, the abundance and the non-toxic character of Si, and the properties of pc-Si like long-term stability and lateral conductance. Glass as supporting material significantly complicates the fabrication process as it limits the thermal budget and the maximum temperature. In this work, the feasibility of forming large-grained pc-Si thin-film solar cells on glass by ion-assisted deposition (IAD) on aluminium-induced crystallisation (AIC) seed layers (ALICIA solar cells) is investigated. IAD allows epitaxial growth at high rate, and being based on evaporation, is of low cost (high source material usage, no toxic gases involved). High-quality epitaxy on (100)-oriented Si wafer substrates is demonstrated in a non{UHV environment, to further increase its industrial appli- cability. High{rate growth and a sacrificial protective layer control contamination problems associated with the non-UHV environment. The process is then trans- ferred to AIC-seeded glass and optimised, with particular focus on the influence of the glass. Using high-temperature rapid thermal annealing and hydrogenation as post-deposition treatments, ALICIA solar cells with a 1-Sun open-circuit voltage of 420 mV are achieved. Moreover, two novel characterisation techniques are presented. One allows the fast and non-destructive assessment of the structural quality of pc-Si films using opti- cal measurements. Furthermore, `impedance analysis', a novel capacitance-voltage measurement technique based on impedance spectroscopy, is presented. It allows the reliable determination of the absorber layer doping density and the built{in potential of non-ideal p-n junction solar cells. The latter is used to investigate the influence of post{deposition treatments on the n-type absorber layer doping of ALICIA solar cells. It is found, using temperature dependent impedance analysis, that unintentional doping and defects have a strong influence on the absorber layer doping. A maximum in the short-circuit current density of ALICIA solar cells is found for phosphorus concentrations in the absorber of 1??1017 cm??3. For such ALI- CIA cells a base difusion length in the range 600 - 950nm, a short{circuit current density in the range 10 - 13.5 mA/cm2 and an energy conversion efficiency of 2.2% are obtained.