Three types of electrodes: carbon paste electrodes modified with nanoparticles of metallophthalocyanines (MPcNP-CPEs, M = Mn, Fe, Ni, Co), basal plane pyrolytic graphite electrodes modified with iron or nickel phthalocyanine nanoparticles and multiwalled carbon nanotube composites (FePcNP/MWCNT-BPPGE or NiPcNP/MWCNT-BPPGE),and basal plane pyrolytic graphite electrodes modified with multiwalled carbon nanotubes and electropolymerized metal tetra-aminophthalocyanines (poly-MTAPc-MWCNT-BPPGE), where M is Mn, Fe, Ni or Co, were prepared. Electrochemical characterizations showed that faster electron transfer kinetics occurred at the NiPcNP/MWCNT-BPPGE than at the FePcNP/MWCNT-BPPGE surface. SEM and electrochemical characterizations of poly-MTAPc-MWCNT-BPPGE showed that MTAPc had been deposited on the MWCNTBPPGE surface, and that the poly-CoTAPc-MWCNT-BPPGE exhibited the fastest electron transfer kinetics of all the poly-MTAPc-MWCNT-BPPGEs. Using amitrole and asulam as test analytes, electrochemical experiments showed that, amongst the CPEs, the FePcNP-CPE and NiPcNP-CPE displayed the most electrocatalytic behavior towards amitrole and asulam oxidation, respectively, and further experiments were done to obtain the electrochemical parameters associated with these electrodes and the corresponding analytes. Although, the FePcNP/MWCNT- BPPGE displayed electrocatalytic behavior towards amitrole oxidation in comparison with the bare BPPGE, it was less electrocatalytic than the FePcNP-CPE in terms of detection potential. The NiPcNP/MWCNT-BPPGE displayed the same detection potential as the NiPcNP-CPE. The poly-FeTAPc-MWCNT-BPPGE exhibited the most electrocatalytic behavior towards amitrole, of all the electrodes investigated, and the poly-CoTAPc-MWCNT-BPPGE displayed the best electrocatalytic behavior towards asulam, amongst the poly-MTAPc-MWCNT-BPPGEs.

abstract: The remarkable conservation of molecular and intra-/inter-cellular pathways underpinning the fundamental aspects of sugar partitioning in two evolutionarily divergent organisms – a non-vascular moss Physcomitrella patens and a vascular cereal crop Oryza sativa (rice) – forms the basis of this manuscript. Much of our current knowledge pertaining to sugar partitioning in plants mainly comes from studies in thale cress, Arabidopsis thaliana, but how photosynthetic sugar is loaded into the phloem in a crop as important as rice is still debated. Even less is known about the mechanistic aspects of sugar movement in mosses. In plants, sugar either moves passively via intercellular channels called plasmodesmata, or through the cell wall spaces in an energy-consuming process. As such, I first investigated the structure of plasmodesmata in rice leaf minor vein using electron tomography to create as of yet unreported 3D models of these channels in both simple and branched conformations. Contrary to generally held belief, I report two different 3D morphotypes of simple plasmodesmata in rice. Furthermore, the complementary body of evidence in arabidopsis implicates plasma membrane localized Proton Pyrophosphatase (H+-PPase) in the energy-dependent movement of sugar. Within this wider purview, I studied the in situ ultrastructural localization patterns of H+-PPase orthologs in high-pressure frozen tissues of rice and physcomitrella. Were H+-PPases neo-functionalized in the vascular tissues of higher plants? Or are there evolutionarily conserved roles of this protein that transcend the phylogenetic diversity of land plants? I show that H+-PPases are distinctly expressed in the actively growing regions of both rice and physcomitrella. As expected, H+-PPases were also localized in the vascular tissues of rice. But surprisingly, H+-PPase orthologs were also prominently expressed at the gametophyte-sporophyte junction of physcomitrella. Upon immunogold labeling, H+-PPases were found to be predominantly localized at the plasma membrane of the phloem complexes of rice source leaves, and both the vacuoles and plasma membrane of the transfer cells in the physcomitrella haustorium, linking H+-PPases in active sucrose loading in both plants. As such, these findings suggest that the localization and presumably the function of H+-PPases are conserved throughout the evolutionary history of land plants. / Dissertation/Thesis / 3D MODEL OF SIMPLE PLASMODESMATA / 3D MODEL OF COMPLEX PLASMODESMATA / MODELING SIMPLE PLASMODESMATA IN IMOD / MODELING COMPLEX PLASMODESMATA IN IMOD / Doctoral Dissertation Biology 2016

abstract: Operando transmission electron microscopy (TEM) is an extension of in-situ TEM in which the performance of the material being observed is measured simultaneously. This is of great value, since structure-performance relationships lie at the heart of materials science. For catalyst materials, like the SiO2-supported Ru nanoparticles studied, the important performance metric, catalyst activity, is measured inside the microscope by determining the gas composition during imaging. This is accomplished by acquisition of electron energy loss spectra (EELS) of the gas in the environmental TEM while catalysis is taking place. In this work, automated methods for rapidly quantifying low-loss and core-loss EELS of gases were developed. A new sample preparation method was also established to increase catalytic conversion inside a differentially-pumped environmental TEM, and the maximum CO conversion observed was about 80%. A system for mixing gases and delivering them to the environmental TEM was designed and built, and a method for locating and imaging nanoparticles in zone axis orientations while minimizing electron dose rate was determined. After atomic resolution images of Ru nanoparticles observed during CO oxidation were obtained, the shape and surface structures of these particles was investigated. A Wulff model structure for Ru particles was compared to experimental images both by manually rotating the model, and by automatically determining a matching orientation using cross-correlation of shape signatures. From this analysis, it was determined that most Ru particles are close to Wulff-shaped during CO oxidation. While thick oxide layers were not observed to form on Ru during CO oxidation, thin RuO2 layers on the surface of Ru nanoparticles were imaged with atomic resolution for the first time. The activity of these layers is discussed in the context of the literature on the subject, which has thus far been inconclusive. We conclude that disordered oxidized ruthenium, rather than crystalline RuO2 is the most active species. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2016

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Since the scotch-tape isolation of graphene, two-dimensional (2D) materials have been studied with increasing enthusiasm. Two-dimensional transition-metal dichalcogenides are of particular interest as atomically thin semiconductors. These materials are naturally transparent in their few-layer form, have direct band gaps in their monolayer form, exhibit extraordinary absorption, and demonstrate unique physics, making them promising for efficient and novel optical devices. Due to the two-dimensional nature of the materials, their properties are highly susceptible to the environment above and below the 2D films. It is critical to understand the influences of this environment on the properties of 2D materials and on the performance parameters of devices made with the materials. For transparent optical devices requiring electrical contacts and gates, the effect of transparent conducting oxides on the optical properties of 2D semiconductors is of particular importance. The ability to tune the optical properties of 2D transition-metal dichalcogenides could allow for improved control of the emission or absorption wavelength of optical devices made with the materials. Continuously tuning the optical properties of these materials would be advantageous for variable wavelength devices such as photodetectors or light emitters. This thesis systematically investigates the intrinsic structural and optical properties of two-dimensional transition-metal dichalcogenide films, the effect of substrate-based optical interference on the optical emission properties of the materials, and demonstrates methods to controllably tune the luminescence emission of the materials for future optical applications. This thesis advances the study of these materials toward integration in future efficient and novel optical devices. The specific transition metal dichalcogenides investigated here are molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2). The thickness-dependence of the intrinsic in-plane crystal structure of these materials is elucidated with high-resolution transmission electron microscopy; thickness-dependent optical properties are studied using Raman and photoluminescence spectroscopies. This thesis investigates the optical interference effects from substrates with transparent conducting oxide layers on the optical properties of few-layer MoS2 films. An understanding of these effects is critical for integrating MoS2 into efficient optical devices. We predict contributions of optical interference effects to the luminescence emission of few-layer MoS2 films. The predictions are experimentally verified. We also demonstrate the use of optical interference effects to tune the wavelength and intensity of the luminescence emission of few-layer MoS2. This thesis explores the use of electric fields applied perpendicular to the films to continuously and reversibly tune the band gap of few-layer MoS2 for future variable wavelength devices. To facilitate integration into devices, we demonstrate electric fieldinduced band gap tuning by applying electric fields with a pair of transparent or semitransparent conducting layers, and without the need for direct electrical contact to the MoS2 films. The observed band gap tuning is attributed to the Stark Effect. We discuss challenges to maximizing the effect of electric field-induced band gap tuning. We demonstrate that optical interference effects do not prevent observation of band gap tuning via applied electric fields. We successfully combine two luminescence emission tuning methods: optical interference effects and electric field effects.

abstract: In this dissertation, various characterization techniques have been used to investigate many aspects of the properties of III-nitride materials and devices for optoelectronic applications. The first part of this work is focused on the evolution of microstructures of BAlN thin films. The films were grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09, while Rutherford backscattering spectrometry (RBS) measures x = 0.06 to 0.16. Transmission electron microscopy indicates the sole presence of the wurtzite crystal structure in the BAlN films, and a tendency towards twin formation and finer microstructure for B/(B+Al) gas-flow ratios greater than 0.15. The RBS data suggest that the incorporation of B is highly efficient, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films. It has also located point defects in the films with nanometer resolution. The defects are identified as B and Al interstitials and N vacancies by comparison of the observed energy thresholds with results of density functional theory calculations. The second part of this work investigates dislocation clusters observed in thick InxGa1-xN films with 0.07 ≤ x ≤ 0.12. The clusters resemble baskets with a higher indium content at their interior. Threading dislocations at the basket boundaries are of the misfit edge type, and their separation is consistent with misfit strain relaxation due the difference in indium content between the baskets and the surrounding matrix. The base of the baskets exhibits no observable misfit dislocations connected to the threading dislocations, and often no net displacements like those due to stacking faults. It is argued that the origin of these threading dislocation arrays is associated with misfit dislocations at the basal plane that dissociate, forming stacking faults. When the stacking faults form simultaneously satisfying the crystal symmetry, the sum of their translation vectors does add up to zero, consistent with our experimental observations. / Dissertation/Thesis / Doctoral Dissertation Physics 2018