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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
31

CMOS radio-frequency power amplifiers for multi-standard wireless communications

Kim, Hyungwook 23 May 2011 (has links)
The development of multi-standard wireless communication systems with low cost and high integration is continuously requested and accompanied by the explosive growth of the wireless communication market. Although CMOS technology can provide most building blocks in RF transceivers, the implementation of CMOS RF power amplifiers is still a challenging task. The objective of this research is to develop design techniques to implement fully-integrated multi-mode power amplifiers using CMOS technology. In this dissertation, a load modulation technique with tunable matching networks and a pre-distortion technique in a multi-stage PA are proposed to support multi-communication standards with a single PA. A fully-integrated dual-mode GSM/EDGE PA was designed and implemented in a 0.18 um CMOS technology to achieve high output power for the GSM application and high linearity for the EDGE application. With the suggested power amplifier design techniques, fully-integrated PAs have been successfully demonstrated in GSM and EDGE applications. In Addition to the proposed techniques, a body-switched cascode PA core is also proposed to utilize a single PA in multi-mode applications without hurting the performance. With the proposed techniques, a fully-integrated multi-mode PA has been implemented in a 0.18 um CMOS technology, and the power amplifier has been demonstrated successfully for GSM/EDGE/WCDMA applications. In conclusion, the research in this dissertation provides CMOS RF power amplifier solutions for multiple standards in mobile wireless communications with low cost and high integration.
32

Design of integrated frequency synthesizers and clock-data recovery for 60 GHz wireless communications

Barale, Francesco 26 August 2010 (has links)
In this dissertation, the development of the first 60 GHz-standard compatible fully integrated 4-channel phase-locked loop (PLL) frequency synthesizer has been presented. The frequency synthesizer features third-order single loop architecture with completely integrated passive loop filter that does not require any additional external passive component. Two possible realizations of fully integrated clock and data recovery (CDR) circuits suitable for 60 GHz-standard compliant base band signal processing have been presented for the first time as well. The two CDRs have been optimized for either high data rate (3.456 Gb/s) or very low power consumption (5 mW) and they both work with a single 1 V supply. The frequency synthesizer is intended to generate a variable LO frequency in a fixed-IF heterodyne transceiver architecture. In such configuration the channel selection is implemented by changing the LO frequency by the required frequency step. This method avoids quadrature 50 GHz up/down-conversion thereby lowering the LO mixer design complexity and simplifying the LO distribution network. The measurement results show the PLL locking correctly on each of the four channels while consuming 60 mW from a 1 V power supply. The worst case phase noise is measured to be -80.1 dBc/Hz at 1 MHz offset from the highest frequency carrier (56.16 GHz). The output spectrum shows a reference spur attenuation of -32 dBc. The high data rate CDR features a maximum operating data rate in excess of 3.456 Gb/s while consuming 30 mW of power. The low power CDR consumes only 5 mW and operates at a maximum data rate of 1.728 Gb/s. Over a 1.5 m 60 GHz wireless link, both CDRs allow 95% reduction of the pulse shaping generated input peak-to-peak jitter from 450 ps down to 50 ps.
33

Multiple antenna downlink: feedback reduction, interference suppression and relay transmission

Tang, Taiwen 28 August 2008 (has links)
Not available / text
34

A wide dynamic range high-q high-frequency bandpass filter with an automatic quality factor tuning scheme

Kumar, Ajay 09 January 2009 (has links)
An 80 MHz bandpass filter with a tunable quality factor of 16∼44 using an improved transconductor circuit is presented. A noise optimized biquad structure for high-Q, high- frequency bandpass filter is proposed. The quality factor of the filter is tuned using a new quality factor locked loop algorithm. It was shown that a second-order quality factor locked loop is necessary and sufficient to tune the quality factor of a bandpass filter with zero steady state error. The accuracy, mismatch, and sensitivty analysis of the new tuning scheme was performed and analyzed. Based on the proposed noise optimized filter structure and new quality factor tuning scheme, a biquad filter was designed and fabricated in 0.25 μm BiCMOS process. The measured results show that the biquad filter achieves a SNR of 45 dB at IMD of 40 dB. The P-1dB compression point and IIP3 of the filter are -10 dBm and -2.68 dBm, respectively. The proposed biquad filter and quality factor tuning scheme consumes 58mW and 13 mW of power at 3.3 V supply.
35

Design and implementation of HTS technology for cellular base stations : an investigation into improving cellular communication : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Electrical Engineering at Massey University, Palmerston North, New Zealand, and James Cook University, Townsville, Australia

Knack, Adrian Unknown Date (has links)
When placed between the antenna and receiver electronics of a cellular base transceiver station, a Cryogenic Receiver Front End (CRFE), consisting of a High Temperature Superconducting (HTS) filter and modern Low Noise Amplifier (LNA), can significantly improve the base stations' coverage and capacity. Due to CRFEs being hurried to the telecommunications industry in a competitive market, the development of CRFEs and their performance have been classified. This left it to be pondered whether HTS filters could really have been beneficial or if they were always just of academic interest. It is the main objective of this thesis to investigate if and under what circumstances high temperature RF-superconductivity can prove to be an important technological contribution to current and future wireless communications. This dissertation presents the analysis of an existing CRFE developed by Cryoelectra GmbH and its performance characteristics measured in a field trial held in rural China. With the aid of a CDMA Uplink Model developed by the author, the data was analysed and several novel engineering improvements were made to create an advanced CRFE which was economical to deploy. The analysis of results from a field trial in Beijing city using the CDMA Uplink Model led to the exploration of alternative filter technologies which could achieve similar results to the HTS filter technology. This culminated in the development of dielectric resonators filters which could be used as an alternative and as a supplement to the HTS filters used in the CRFE. The design of two novel dielectric resonator duplexers and two advanced multioperator combiner antenna sharing solutions followed the successful implementation of a high performance dielectric resonator filter. The performed investigation and development described in this thesis suggest that HTS filter technology for terrestrial wireless communications can be beneficial in current cellular networks, but due to its high cost is economical for use only under certain conditions. However, HTS filter technology may be of great importance in the design and implementation of spectrum friendly wireless communications systems in the future.
36

Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers

Grens, Curtis Morrow 04 May 2009 (has links)
This work investigates the fundamental device limits related to operational voltage constraints and linearity in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in order to support the design of robust next-generation high-frequency transceivers. This objective requires a broad understanding of how much "usable" voltage exists compared to conventionally defined breakdown voltage specifications, so the role of avalanche-induced current-crowding (or "pinch-in") effects on transistor performance and reliability are carefully studied. Also, the effects of intermodulation distortion are examined at the transistor-level for new and better understanding of the limits and trade-offs associated with achieving enhanced dynamic range and linearity performance on existing and future SiGe HBT technology platforms. Based on these investigations, circuits designed for superior dynamic range performance are presented.

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