Modern semiconductor fabrication techniques allow for the fabrication of semiconductor heterostructures which host electron transport with a minimum of scattering sites. In such devices, electrons populate a two-dimensional electron gas (2DEG) in which electrons propagate in exactly two dimensions, and may be further confined by potential barriers to form electron billiards. At sub-Kelvin temperatures, electron trajectories are determined largely by reflections from the billiard walls, while net conduction through the device depends on quantum mechanical wave interference. Measurements of magnetoconductance fluctuations (MCF) serve as a probe of dynamics within the electron billiard. Many prior studies have utilized heterostructures employing the modulation doping architecture, in which the 2DEG is spatially removed from the donor atoms to minimize electron scattering. Theoretical studies have claimed that MCF will be fractal when the confinement potential defining the billiard is soft-walled, regardless of the presence of smooth potentials within the billiard such as those introduced by remote ionized donors. The small-angle scattering sites resulting from these potentials are often disregarded as negligible; we use MCF measurements to investigate such claims. To probe the effect of remote ionized donor scattering on the phase space in electron billiards, we compare MCF measured on billiards in a modulation-doped heterostructure to those measured on billiards in an undoped heterostructure, in which this potential landscape is believed to be absent. Fractal studies are performed on these MCF traces, and we find that MCF measured on the undoped billiards do not exhibit measurably different fractal characteristics than those measured on the modulation-doped billiards. Having confirmed that the potential landscapes in modulation-doped heterostructures do not affect the electron phase space, we then investigate the effect of these impurities on the distribution of electron trajectories through the billiards. By employing thermal cycling experiments, we demonstrate that this distribution is highly sensitive to the precise potential landscape within the billiard, suggesting that modulation-doped heterostructures do not support fully ballistic electron transport. We compare our MCF correlation data with the dynamics of charge transfer within heterostructure systems to make qualitative conclusions regarding these dynamics.

The non-interacting, nonuniform electron gas exhibits simplifications in two dimensions, that are of particular interest in the application of density functional theory. The results of linear response theory for an attractive impurity in a two-dimensional gas have been shown to be surprisingly accurate even though there are bound states, and were shown to be exact in the high density limit (Zaremba et al. Phys. Rev. B, 71:125323, 2005 and Zaremba et al. Phys. Rev. Lett., 90(4):046801, 2003). The density resulting from linear response theory and the Thomas-Fermi approximation coincide in the high density limit. As an alternative to linear response theory, the Kirzhnits gradient expansion gives corrections to Thomas-Fermi in gradients of the potential. In two dimensions, all of the gradient corrections vanish at zero temperature, which is a new result presented in this work. We have performed numerical calculations which show that while Thomas-Fermi appears to be a surprisingly accurate approximation in two dimensions, it is not exact. The differences between two and three dimensions that lead to the vanishing of the gradient corrections, however, are of great interest since these may lead to better understanding and simplifications of the corresponding three-dimensional problem. / Thesis (Master, Physics, Engineering Physics and Astronomy) -- Queen's University, 2007-11-07 09:47:00.316

Oxide heterostructures are attracting huge interest in recent years due to the special functionalities of quasi two-dimensional quantum gases. In this thesis, the electronic states at the interface between perovskite oxides and pyrite compounds have been studied by first-principles calculations based on density functional theory. Optimization of the atomic positions are taken into account, which is considered very important at interfaces, as observed in the case of LaAlO3/SrTiO3. The creation of metallic states at the interfaces thus is explained in terms of charge transfer between the transition metal and oxygen atoms near the interface. It is observed that with typical thicknesses of at least 10-12 °A the gases still extend considerably in the third dimension, which essentially determines the magnitude of quantum mechanical effects. To overcome this problem, we propose incorporation of highly electronegative cations (such as Ag) in the oxides. A fundamental interest is also the thermodynamic stability of the interfaces due to the possibility of atomic intermixing in the interface region. Therefore, different cation intermixed configurations are taken into account for the interfaces aiming at the energetically stable state. The effect of O vacancies is also discussed for both polar and non-polar heterostructures. The interface metallicity is enhanced for the polar system with the creation of O vacancies, while the clean interface at the non-polar heterostructure exhibits an insulating state and becomes metallic in presence of O vacancy. The O vacancy formation energies are calculated and explained in terms of the increasing electronegativity and effective volume of A the side cation. Along with these, the electronic and magnetic properties of an interface between the ferromagnetic metal CoS2 and the non-magnetic semiconductor FeS2 is investigated. We find that this contact shows a metallic character. The CoS2 stays quasi half metallic at the interface, while the FeS2 becomes metallic. At the interface, ferromagnetic ordering is found to be energetically favorable as compared to antiferromagnetic ordering. Furthermore, tensile strain is shown to strongly enhance the spin polarization so that a virtually half-metallic interface can be achieved, for comparably moderate strain. Our detailed study is aimed at complementing experiments on various oxide interfaces and obtaining a general picture how factors like cations, anions, their atomic weights and elecronegativities, O vacancies, lattice mismatch, lattice relaxation, magnetism etc play a combined role in device design.

No description available.

We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov¡Vde Haas(SdH) measurement. Two SdH oscillations were detected on the samples of x=0.35 and 0.31, due to the population of the first two subbands with the energy separations of 128 and 109 meV, respectively. For the sample of x=0.25, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energy is equal to 9.0 meV. The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode. For the part of experiment , we installed a "Regulator" on low temperature and high magnetic field system, in order to control the temperature of sample from 0.3K to 10K accurately. For the convenience of SdH measurements at different tempertures.

Title of dissertation: GROWTH OF Zn POLAR BeMgZnO/ZnO HETEROSTRUCTURE WITH TWO DIMENSIONAL ELECTRON GAS (2DEG) AND FABRICATION OF SILVER SCHOTTKY DIODE ON BeMgZnO/ZnO HETEROSTRUCTURE By Md Barkat Ullah, Ph.D A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering at Virginia Commonwealth University. Virginia Commonwealth University,2017 Major Director: Dr. Hadis Morkoç, Professor, Electrical and Computer Engineering This thesis focuses on growth of Zn polar BeMgZnO/ZnO heterostructure on GaN/sapphire template with two dimensional electron gas (2DEG) for the application of UV photodetector/emitter and high speed electronics. The motivation of using BeMgZnO as a barrier layer originates from the need to reach plasmon-LO phonon resonance in order to obtain minimum longitudinal optical (LO) phonon lifetime. Presence of 2DEG was realized in BeMgZnO/ZnO heterostructure only when the Zn polarity was achieved during the nucleation growth of ZnO on GaN/sapphire template. It was found that, polarity of ZnO on (0001) GaN/sapphire template can be controlled by the oxygen to Zn ratio used during the nucleation growth. To obtain high structural and optical quality of BeMgZnO quaternary alloy, growth kinetics of BeMgZnO layer has been studied at the temperature range from 450°C-500°C. We have achieved the growth of single crystal Be.03Mg00.15ZnO alloy at 500 °C, more than 100°C higher compared to what reported in literature, on the (0001) GaN/sapphire template through the control of Zn/(Be+Mg) flux ratio. We have also observed a thermodynamic limitation of Mg incorporation into the wurtzite BeMgZnO alloy where the excess Mg adatom accumulated in the growing surface as a MgO rich cluster. Two dimensional electron gas with high (1.2×1013cm-2) sheet carrier density was achieved at the Be0.03Mg0.41ZnO/ZnO interface through strain engineering by incorporating Be into MgZnO ternary alloy. To obtain the similar sheet carrier density it would require above 60% of Mg in MgZnO/ZnO heterostructure with reduced structural quality. A systematic comparison of sheet carrier density has been made with the already reported results from Zn polar MgZnO/ZnO heterostructure as well as with the theoretical calculation. Silver Schottky diode on Be0.02Mg0.26ZnO/ZnO heterostructure with barrier height 1.07 eV and ideality factor 1.22 was obtained with 8 order of rectification ratio. The temperature-dependent electrical characteristics were studied by using temperature dependent current-voltage (I-V) measurements. Richardson constant value of 34.8 Acm-2K-2 was found experimentally which was close to the theoretical value of 36 Acm-2K-2 known for Be0.02Mg0.26ZnO alloy.

Dans la gamme de fréquence térahertz (THz), les sources et les détecteurs couramment utilisés en optique et en électronique présentent une chute de performances. Mon travail de thèse s’inscrit dans le cadre de la recherche de composants THz peu onéreux, compacts, accordables en fréquence et facile à intégrer. Le premier volet de mon travail de thèse concerne la détection THz et met à profit le couplage entre une onde incidente THz et des plasmons d’un gaz bidimensionnel d’électrons (2DEG) via des réseaux métalliques déposés au-dessus d’hétérostructures. Quatre puits quantiques à base de semi-conducteurs III/V(AlGaN/GaN, AlGaAs/GaAs, InAlN/GaN) et IV/IV (SiGe/Si/SiGe) ont été étudiés. Parmi les hétérostructures envisagées, celles réalisées à partir de matériaux III-N présentent les plus fortes résonances. Des mesures de spectre de transmission ont été effectuées avec un spectromètre à transformée de Fourier (FTIR) à température ambiante et cryogénique. Les modélisations numériques sont en bon accord avec les résultats expérimentaux. Une étude sur l’influence de la distribution homogène ou inhomogène du gaz d’électrons 2D est présentée. Le deuxième volet de la thèse concerne l’optimisation de la transmission THz. Les performances (dipsersions et les pertes) des guides d'onde planaires sont mal connues au THz. Nous avons choisi d’étudier des guides d’onde couramment utilisés en hyperfréquence. Dans un premier temps, la dispersion et les pertes (rayonnement, conduction et diélectrique) de lignes coplanaires (CPW) sur substrat polymère (BCB = benzocyclobutène) et substrat semiconducteur (InP) obtenues grâce à des modélisations numériques (Ansoft HFSS) entre 20 GHz et 1 THz sont présentées. Puis d’autres types de guides ont été envisagés tels que les lignes micro-ruban, à fente et triplaques sur substrat BCB avec HFSS et CST MWS. Leurs performances ont été comparées afin de dégager la structure la plus performante au THz. Des mesures entre 340 et 500 GHz ont pu aussi être réalisées pour les guides CPW. La comparaison avec les données numériques a montré un bon accord. / In the THz frequency gap between electronics and optics, the development of compact, tunable, less costly and room temperature operating sources, detectors, amplifiers and passive devices is growing. Electronic devices based on two dimensional (2D) plasmons in heterostructures open up the possibility of tunable emission and detection of THz radiation. For short distance THz transmission, the increased radiation loss as well as other types of loss (dielectric and ohmic loss) may handicap the applications of conventional planar waveguides well studied in the microwave band. Reevaluation of their propagation properties and comprehension of the physical nature of each kind of loss are necessary.This work is divided into two main sections. The first part deals with the optimization of THz resonant detection by quasi 2D plasmons-polaritons (PP) in the quantum wells (QW) among four heterostructures: III-V (AlGaN/GaN, InAlN/GaN, AlGaAs/GaAs) and IV-IV (SiGe/Si/SiGe). With the aid of metallic grating coupler, both ANSOFT HFSS and an indigenously developed program are used to investigate quantitatively the influences of structural parameters (grating period, metal strip width and thickness of barrier layer) and natural properties of 2D plasmons (electron concentration and mobility) on the PP resonances (frequency and amplitude) up to 5 THz. Transmission spectra of sample AlGaN/GaN have been measured by Fourier Transform Infrared Spectroscopy (FTIR) in 0.6-1.8 THz for various metal widths and at different temperatures to compare with the simulated results. At last, two types of modulated 2D electron gas in AlGaAs/GaAs are analyzed. One is the natural electron variation below and between metal fingers due to the difference between the barrier height at the interface metal/semiconductor and Fermi level pinning at the interface air/semiconductor. The other type is the forced modulated 2DEG by biasing voltage on metal fingers. These two parametric studies allow us to analyze and tune the frequency and amplitude of the THz detection. The second part separately studies the dispersions and attenuations of four waveguides (CPW, Microstrip, Stripline and Slotline) with the variation of geometric dimensions and properties of dielectric and metal by ANSOFT HFSS and CST MWS. Their performances are compared until 1 THz based on the same characteristic impedance. The advantages and the limitations of each waveguide are outlined and an optimal THz transmission line is proposed. Furthermore, preliminary measured attenuation of CPW in the frequency range 340-500 GHz are demonstrated and compared with numerical results. The design of transitions for adapting experimental probes by HFSS and the de-embedding method for extracting scattering and attenuation parameters of CPW by ADS are also presented..

This thesis studies electron spin phenomena in lateral semi-conductor quantum dots/anti-dots and electron conductance in graphene nanoribbons by numerical modelling. In paper I we have investigated spin-dependent transport through open quantum dots, i.e., dots strongly coupled to their leads, within the Hubbard model. Results in this model were found consistent with experimental data and suggest that spin-degeneracy is lifted inside the dot – even at zero magnetic field. Similar systems were also studied with electron-electron effects incorporated via Density Functional Theory (DFT) in the Local Spin Density Approximation (LSDA) in paper II and III. In paper II we found a significant spin-polarisation in the dot at low electron densities. As the electron density increases the spin polarisation in the dot gradually diminishes. These findings are consistent with available experimental observations. Notably, the polarisation is qualitatively different from the one found in the Hubbard model. Paper III investigates spin polarisation in a quantum wire with a realistic external potential due to split gates and a random distribution of charged donors. At low electron densities we recover spin polarisation and a metalinsulator transition when electrons are localised to electron lakes due to ragged potential profile from the donors. In paper IV we propose a spin-filter device based on resonant backscattering of edge states against a quantum anti-dot embedded in a quantum wire. A magnetic field is applied and the spin up/spin down states are separated through Zeeman splitting. Their respective resonant states may be tuned so that the device can be used to filter either spin in a controlled way. Paper V analyses the details of low energy electron transport through a magnetic barrier in a quantum wire. At sufficiently large magnetisation of the barrier the conductance is pinched off completely. Furthermore, if the barrier is sharp we find a resonant reflection close to the pinch off point. This feature is due to interference between a propagating edge state and quasibond state inside the magnetic barrier. Paper VI adapts an efficient numerical method for computing the surface Green’s function in photonic crystals to graphene nanoribbons (GNR). The method is used to investigate magnetic barriers in GNR. In contrast to quantum wires, magnetic barriers in GNRs cannot pinch-off the lowest propagating state. The method is further applied to study edge dislocation defects for realistically sized GNRs in paper VII. In this study we conclude that even modest edge dislocations are sufficient to explain both the energy gap in narrow GNRs, and the lack of dependance on the edge structure for electronic properties in the GNRs.

No description available.

The electrical and thermal conductance and the Seebeck coefficient are calculated for one-dimensional systems, and their behavior as a function of temperature and chemical potential is investigated. It is shown that the conductances are proportional to an average of the transmission probability around the Fermi level with the average taken for the thermal conductance being over a wider range. This has the effect of creating less well-defined plateaus for thermal-conductance quantization experiments. For weak non-linearities, the charge and entropy currents across a quantum point contact are expanded as a series in powers of the applied bias voltage and the temperature difference. After that, the expansions of the Seebeck voltage in temperature difference and the Peltier heat in current are obtained. Also, it is shown that the linear thermal conductance of a quantum point contact displays a half-plateau structure, almost flat regions appearing around half-integer multiples of the conductance quantum. This structure is investigated for the saddle-potential model.