Stuttgart, Univ., Diss., 2007.

Techn. Universiẗat, Diss., 2003--Berlin.

University, Diss., 2005--Kassel.

Compared to single-mode VCSELs, multimode VCSELs have not received much attention in models and characterizations for functional parameters, despite making up the majority of commercially available VCSELs [1]. In particular, the extraction of the linewidth enhancement factor for multimode VCSELs has been overlooked, likely due to difficulties in measurement. Additionally, multimode models for VCSELs have, until recently, omitted spectral characteristics such as linewidth [2]. This is the first work to report a measured linewidth enhancement factor value (lower bound) for a multimode VCSEL. A characterization for the functional parameters of a red multimode vertical-cavity surface-emitting laser (VCSEL) is shown herein. The extracted values form a complete working set of parameters for the laser rate equations. The techniques employed for extracting values include frequency responses, power versus current fittings, and optical spectral measurements. From the frequency responses at various bias currents, the relaxation oscillation frequency and damping factor are found. The power versus current curve is fitted to find parameters including the modal spontaneous emission rate and carrier density at threshold. The spectral measurements are used for evaluating the linewidth enhancement factor (LEF) also known as the alpha factor or Henry factor. These 5 methods have been applied previously to characterizing single-mode VCSELs [3]–[5]. The experimentally extracted parameters herein are important for creating accurate models and simulations for multimode VCSELs. Improved multimode VCSEL models are necessary for improving optical communication, especially for short-range optical interconnects [2]. The measured parameters for the characterized VCSEL are comparable to similar single-mode VCSELs characterized in other works. This is promising because multi-mode VCSELs have higher output power than their single-mode counterparts, thus these results may aid in improving short-range optical interconnects.

The objective of this work is to develop a near-infrared laser device capable of emitting orbital angular momentum (OAM) light. The prototyped device must be suitable for compact, energy-saving optical communication applications. Integrated OAM lasers will revolutionize high-capacity data transmission over any telecommuni- cation network environment, as OAM light can be guided and transmitted through kilometers of optical fibers and propagated in free space and underwater. Several methods for generating OAM light employing various complex monolithic and hybrid integration methods have been demonstrated. In this work, microscale integrated spiral phase plates (SPPs) are chosen to convert the laser beam output into an OAM mode. The concept and design fundamentals of SPPs are discussed, followed by the SPP fabrication process and their implementation in a high-speed communication setup and then integration with a semiconductor laser. SPPs are fabricated by a novel direct laser writing that provides the possibility to rapidly prototype 3D photonic structures via a two-photon polymerization pro- cess. After fabrication, SPPs are used in a fine-tuned free-space optical experimental setup that requires high-precision intercomponent alignment to test the high-speed OAM communication system and analyze the quality of OAM modes, resulting in high-purity OAM signals at data rates up to 1.8 Gbit/s – limited by the avalanche photodetector (APD) frequency response. The fabricated 20-μm-diameter SPPs were the smallest reported in the literature to date for optical characterization. A proof-of-concept monolithic light-emitting array, as a highly integrated OAM laser source, is further proposed for telecommunications and other applications. SPP-integrated 940-nm vertical-cavity surface-emitting laser (VCSEL) array chips that are relatively low-cost, have a small footprint, and are manufacturable in high volumes are developed. SPPs with topological charge modulus values from 1 to 3 are fabricated on the VCSEL arrays, demonstrating OAM modal purities up to ∼65%. The experimentally evaluated data rates in the OAM setup showed consistently sta- ble links up to 2.0 Gbit/s with a bit error ratio of ∼ 1.6 × 10−8 (APD-limited). The challenges of SPP-laser integration are summarized, with the conclusion that the widespread adoption of OAM is limited by the availability of practical integrated solutions for OAM generation and detection.

This dissertation details the work has been done on a novel resonant cavity linear interferometric modulator and a direct phase detector with channel filtering capability using injection-locked semiconductor lasers for applications in RF photonics. First, examples of optical systems whose performance can be greatly enhanced by using a linear intensity modulator are presented and existing linearized modulator designs are reviewed. The novel linear interferometric optical intensity modulator based on an injection-locked laser as an arcsine phase modulator is introduced and followed by numerical simulations of the phase and amplitude response of an injection-locked semiconductor laser. The numerical model is then extended to study the effects of the injection ratio, nonlinear cavity response, depth of phase and amplitude modulation on the spur-free dynamic range of a semiconductor resonant cavity linear modulator. Experimental results of the performance of the linear modulator implemented with a multi-mode Fabry-Perot semiconductor laser as the resonant cavity are shown and compared with the theoretical model. The modulator performance using a vertical cavity surface emitting laser as the resonant cavity is investigated as well. Very low Vπ in the order of 1 mV, multi-gigahertz bandwidth (-10 dB bandwidth of 5 GHz) and a spur-free dynamic range of 120 dB.Hz2/3 were measured directly after the modulator. The performance of the modulator in an analog link is experimentally investigated and the results show no degradation of the modulator linearity after a 1 km of SMF. The focus of the work then shifts to applications of an injection-locked semiconductor laser as a direct phase detector and channel filter. This phase detection technique does not iv require a local oscillator. Experimental results showing the detection and channel filtering capability of an injection-locked semiconductor diode laser in a three channel system are shown. The detected electrical signal has a signal-to-noise ratio better than 60 dB/Hz. In chapter 4, the phase noise added by an injection-locked vertical cavity surface emitting laser is studied using a self-heterodyne technique. The results show the dependency of the added phase noise on the injection ratio and detuning frequency. The final chapter outlines the future works on the linear interferometric intensity modulator including integration of the modulator on a semiconductor chip and the design of the modulator for input pulsed light.

Long-wavelength (1.3-μm) vertical-cavity surface-emitting lasers (VCSELs) are of great interest as low-cost, high performance light sources for fiber-optic metro and access networks. During recent years the main development effort in this field has been directed towards all epitaxial GaAs-based structures by employing novel active materials. Different active region candidates for GaAs-based 1.3-μm VCSELs such as GaInNAs/GaAs QWs, GaAsSb QWs or InAs/InGaAs QDs have been investigated. However, the difficult growth and materials properties of these systems have so far hampered any real deployment of the technology. More recently, a new variety of VCSELs have been developed at KTH as based on highly strained InGaAs QWs and negative gain cavity detuning to reach the 1.3-μm wavelength window. The great benefit of this approach is that it is fully compatible with standard materials and processing methods. The aim of this thesis is to investigate long-wavelength (1.3-μm) VCSELs using ~1.2-μm In0.4GaAs/GaAs Multiple Quantum Wells (MQWs). A series of QW structures, DBR structures and laser structures, including VCSELs and Broad Area lasers (BALs) were grown by metal-organic vapor phase epitaxy (MOVPE) and characterized by various techniques: Photoluminescence (PL), high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM), high accuracy reflectance measurements as well as static and dynamic device characterization. The work can be divided into three parts. The first part is dedicated to the optimization and characterization of InGaAs/GaAs QWs growth for long wavelength and strong luminescence. A strong sensitivity to the detailed growth conditions, such as V/III ratio and substrate misorientation is noted. Dislocations in highly strained InGaAs QW structure and Sb as surfactant assisted in InGaAs QW growth are also discussed here. The second part is related to the AlGaAs/GaAs DBR structures. It is shown that the InGaAs VCSELs with doped bottom DBRs have significantly lower slope efficiency, output power and higher threshold current. By a direct study of buried AlGaAs/GaAs interfaces, this is suggested to be due to doping-enhanced Al-Ga hetero-interdiffusion. In the third part, singlemode, high-performance 1.3-μm VCSELs based on highly strained InGaAs QWs are demonstrated. Temperature stable singlemode performance, including mW-range output power and 10 Gbps data transmission, is obtained by an inverted surface relief technique. / QC 20101126

Dagvatten transporteras via dagvattenbrunnar in i ledningsnät och bort från betongytor. Problem uppstår då dessa sätter igen vilket leder till att vägar och bostäder kan översvämmas. Detta medför ett behov att övervaka när dagvattenbrunnarna sätter igen. Sundsvalls kommun har tillsammans med Mittuniversitet använt sig av differentiella tryckgivare för att mäta vattennivåer i syfte att detektera när dagvattenbrunnarna sätter igen. Tryckgivaren fungera bra under sommartid men ger felaktiga utslag under vintern. Det har därmed föreslagits en kontakt fri lösningsmetod som omfattar ToF LiDAR sensorn VL53L1X. ToF LiDAR sensorer används för att bestämma avstånd till objekt, eftersom dessa inte vanligtvis appliceras inom vattennivåmätningar är detta en ny metod i det området. Syftet med arbetet var att utreda ifall ToF LiDAR sensorn VL53L1X kunde användas för att mäta vattennivåer samt avgöra om den kan tillämpas för övervakning av dagvatten under sommar- och vintertid. Övergripande mål var att utreda ifall sensorn kunde implementeras i en nod. Ett flertal förstudier gjordes för att utreda vilka faktorer som påverkade mätresultatet och för att karakterisera sensorns konfigurering för att anpassa sensorn för vattennivåmätningar i avsikt att effektivisera mätmetoden. Det framgick av förstudierna att faktorerna vattengrumlighet, solljus och avstånd till mätobjektet påverkade mätningarna så att mätresultatet försämrades. Det har konstaterats med arbetet som underlag att sensorn kan mäta vattennivåer och kan tillämpas för att övervaka dagvattennivåer. Mätresultat vid vattennivåmätningar kan åstadkommas med en mätnoggrannhet på ca 28 mm och ett mätfel på ca 46 mm. Mätresultatet gäller under omständigheterna att vattnet är rent, under påverkan av solljus samt att sensorns höjdposition är maximalt 90 cm. / Stormwater is transported through stormwater wells into a passage system and away from concrete surfaces. Problem emerges when these clog and causes flooding on roads and housings. These convey a necessity for monitoring the wells so that they do not clog. Sundsvall municipality has together with Mittuniversitet, used differential pressure sensors to measure water levels to detect when the stormwater wells clog. The differential pressure sensor operates well under summer season but during winter, it gives inadequate readings. Therefore, a contact free method has been suggested, that comprises the ToF LiDAR sensor VL53L1X. ToF LiDAR sensors are applied to determine distances, and are not usually used to measure water levels, therefore the suggested method is novice method for these types of applications. The purpose of the study was to investigate if the ToF LiDAR sensor VL53L1X could be used to measure water levels and to decide if it can be applied for monitoring of stormwater during summer- and winter season. The overall purpose was to investigate if the sensor could be implemented in a node. Various pre-studies were done to examine what factors could influence the measurement results and to characterize the sensor configuration to adapt the sensor for water level measurements to increase the effectiveness of the measuring method. The outcome of the pre-studies was that the factors water turbidity, sunlight, and distance to measuring object influenced the measurements so that the measuring results became inferior. It has been established with the studies as ground that the sensor can measure water levels and that it can be applied to monitor stormwater levels. The measuring result when applied to water level measuring could be obtained with an accuracy of approximately 28 mm and an error of approximately 46 mm. The measuring result apply during the conditions that the water is clean, with influence of sunlight and given that the sensor height position is maximum 90 cm.

Les oscillateurs sont présents dans tous les systèmes de communications que nous utilisons. Ils nous permettent de faire la synchronisation entre l’émetteur et le récepteur d’un message. La qualité de cette synchronisation dépend de la stabilité de l’oscillateur. Afin de caractériser cette stabilité dans le domaine fréquentiel, le bruit de phase est utilisé comme paramètre de référence. Un oscillateur qui délivre un signal avec une faible valeur de bruit de phase est un oscillateur de grande pureté spectrale. Les oscillateurs électroniques ont une bonne performance à basse fréquence. En mesure de la demande des systèmes de très haut débit, les oscillateurs électroniques ne sont pas capables de produire signaux qu’avec l’utilisation de multiplicateurs de fréquence qui ajoutent plusieurs éléments à la chaine de communication. Les systèmes hybrides permettent de prendre d’avantage la bonne performance de composants optiques en haute fréquence afin de les intégrer dans les systèmes électroniques et surmonter de cette façon-là les limitations fréquentielles des systèmes électroniques. Ce travail vise l’utilisation de la technique de verrouillage optique par injection du faisceau d’un laser maître vers la cavité d’un VCSEL sous modulation directe dans la boucle d’oscillation. La technique du verrouillage optique du VCSEL permets d’élargir la bande passante de modulation directe du VCSEL et réduire son bruit d’intensité (Relative Intensity Noise - RIN). La réduction du RIN a comme effet secondaire la réduction de la contribution du bruit additif dans l’oscillateur et, en conséquence, la réduction du bruit de phase de l’oscillateur. / Oscillators are present in all telecommunication systems. They synchronize the emitter and receiver of a message. The quality of the synchronization depends on the oscillator stability. To characterize the frequency domain oscillator stability, the phase noise of the carrier is used as figure of merit. An oscillator delivering a low phase noise carrier is a high spectral purity oscillator. Electronic oscillators are high performing at low frequencies. As communications systems require high data rate transmission, the electronic oscillators uses frequency multipliers that degrades the spectral purity of the carrier. The hybrid systems take advantage of the good performance of optical components at high frequency with the goal to be integrated in the electronic systems to overcome frequency limitation issues. This work use the optical injection locking technique by injecting the laser beam of a master laser inside the cavity of a VCSEL under direct modulation. The optical injection locking technique enlarges the direct modulation bandwidth of the VCSEL and reduces the Relative Intensity noise of the laser (RIN). The RIN reduction has as side effect the reduction of the additive noise inside the oscillator and, in consequence, reducing the oscillator phase noise.

Ce travail de thèse est axé sur l'utilisation de modes de Bloch lents à pertes rayonnées verticales, dans des cristaux photoniques membranaires 1D (réseau de fentes) et 2D (réseaux de trous) en InP, pour la réalisation de réflecteurs en espace libre. L'intérêt premier de tels réflecteurs réside dans leur compacité verticale (une seule couche épitaxiée), comparés aux miroirs de Bragg traditionnels, mais également dans le contrôle de la polarisation qu'ils autorisent. Les règles de conception de ces réflecteurs, ainsi que leurs procédés de fabrication et de caractérisation sont présentés. Les résultats expérimentaux obtenus sont en bon accord avec la théorie.<br /><br />Ces réflecteurs membranaires à cristaux photoniques ont ensuite été intégrés dans des cavités Fabry-Pérot verticales, où ils remplacent le miroir de Bragg supérieur. Un dispositif passif (filtre MOEMS accordable électriquement, compact et polarisé) et un dispositif actif (VCSEL à puits quantiques, émettant à 1.55µm, compact et polarisé) ont été réalisés.<br /><br />Enfin, des cavités Fabry-Pérot ultimes, uniquement à base de ces réflecteurs à CP, sont étudiées. Le concept est validé en utilisant deux échantillons différents placés en vis-à-vis à l'aide d'un montage piézo-électrique. Ensuite, un démonstrateur passif monolithique, montrant une sélectivité et une compacité verticale sans précédents.<br />En outre, une étude théorique démontre la capacité des miroirs à CP à influer très fortement sur la vitesse d'expansion latérale de la lumière dans les cavités Fabry-Pérot, ce qui ouvre la voie à de toutes nouvelles applications.