We have fabricated a high brightness and color purity white light organic light emitting diode based on a multi-emission-layer. There were several methods to achieve white light OLEDs, including multi-emission- layer device, single emission layer device, and so on. We use RGB triple -emission-layer device to obtain white light, because its EL spectrum is broader than that of the dual-emission-layer device. Frequent problems that showed be faced in a multi-layer structure are the complicate device structure and the color various with different operation voltage. Our work includes five parts. First, we optimized the red light device by controlling the concentration of DCJTB with the configuration of ITO/NPB/Alq3: DCJTB/Alq3/LiF/Al. Second, we optimized the blue light device by controlling the concentration of TC-1753 based on a device structure of ITO/ NPB/ TC-1558: TC-1753/ Alq3/ LiF/ Al. Third, we fabricated green light device by using TPB3 as an emission layer with the configuration of ITO/NPB/TPB3/Alq3/LiF/Al. Then we optimized the dual-emission-layer white light OLED by adjusting the thickness of blue and red emission layers. Finally, we added a green emission layer into the dual emission layer device with the device structure of ITO(1300Å)/NPB(500Å)/ TPB3(500-2xÅ)/ TC-1558(xÅ): TC-1753(2%)/ Alq3(xÅ): DCJTB(2%)/ Alq3(350Å)/ LiF(8Å)/Al(2000Å). By controlling the thickness of each emission layer, a stable white OLED was achieved. The thickness of emission layer were TPB3(200Å)/ TC-1558(150Å):TC-1753(2%)/ Alq3(150Å):DCJTB(2%). The maximum luminance reached 48200 cd/m2 at 13.5V, the maximum current efficiency and power efficiency were 4.06 cd/A at 13V and 1.9 lm/W at 20mA/cm2, respectively. The CIE coordinate varied from (0.339, 0.317) to (0.339, 0.327) with an applied voltage from 9V to 13.5V. We have overcome the problem of instable color purity which was the critical disadvantage of multi-emission-layer white light OLEDs. Our study performed a high brightness and color purity white light device.

Tandem structure for OLED application with HAT-CN:Alq3 interlayer is studied. It has been found that tandem cell with such interlayer structure has a low turn-on voltage as comparing to other types of interlayer structure. Three research topics are included in this research: (1) Study of carrier generation , carrier transport , and other optoelectronic properties for tandem cells with HAT-CN:Alq3 interlayer. (2) Study of white OLED device with single emitting layer and HAT-CN:Alq3 interlayer. (3) Study of electroluminescence property of top and bottom device of a tandem cell with HAT-CN:Alq3 interlayer. Experimental results show that electron transport is slowing down with increasing Alq3 concentration in the HAT-CN:Alq3 interlayer. However concentration of Alq3 in the interlayer does not affect transport property of hole. A white OLED with HAT-CN:Alq3 interlayer can reach 40,500 cd/m2 at 2180 mA/cm2 with a power efficiency of 1.96 lm/W and CIE coordicate of (0.34,0.32).

We report that the tandem OLEDs made of two electroluminescent (EL) units connected by the interconnecting layer. If It is compared wih the traditional OLEDs. The tandem OLEDs have higher efficiency and well lifetime. We not only used the single emitting layer WOLEDs as EL unit but also studied the effect of the interconnecting layer for whole device. First, we designed the interconnecting layer with Alq3¡GLi (1%) (n-doping layer)/MoO3 (p-doping layer), and we optimized the thickness of the interconnecting layer by using green unit cell (Alq3 for EML), ITO/NPB(65 nm)/Alq3(30 nm)/Alq3(30 nm)/Alq3(x nm)¡GLi (1%)/MoO3(y nm)/NPB(65 nm)/Alq3(30 nm)/Alq3(30 nm)/LiF(0.8 nm)/Al(200 nm) x=10¡A20¡A30¡A40¡Fy=1¡A3¡A5¡A7¡A10 We found that the best thickness of Alq3¡GLi (1%) and MoO3 are 20 nm and 5 nm. In our study, we concluded that there are the best thickness to each interconnecting layer, and it keeps the charge balance between two units. Finally, we used our single emitting layer WOLEDs as unit cell, which used 1,3,5-Tri(1-pyrenyl)benzene (TPB3) as the host, and 4-(dicyanomethylene)-2-tert-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as the guest, unit cell was ITO(130 nm)/NPB(65 nm)/ TPB3(30 nm)¡GDCJTB(0.05%)/ Alq3(30 nm)/LiF(8 nm)/Al(200 nm) Whole device was ITO(130 nm)/NPB(65 nm)/ TPB3(30 nm)¡GDCJTB(0.05%)/ Alq3(30 nm)/Alq3(20 nm)¡GLi(1%)/MoO3(5 nm)/NPB(65 nm)/TPB3(30 nm)¡GDCJTB(0.05%)/Alq3(30 nm)/ LiF(0.8 nm)/Al(200 nm) We got almost three times luminance from the tandem one at the same current density (670 cd/m2 for 2360 cd/m2 at 20 mA/cm2) and efficiency as high as 9.7 cd/A ( at 24 mA/cm2). It¡¦s a excellent contribution for device lifetime. But the operation voltage and the power efficiency didn¡¦t reach to our expectancy. In order to improve the disadvantage, we changed the concentration of n-doping layer Alq3¡GLi (z %)¡Az=1%¡A2%¡A3%. It was actually improved the turn-on voltage from 10 V to 7 V. But the luminescent characteristics also degenerated. Although we enhanced the charge mobility of the n-doping layer, it also caused the degeneration of luminescent characteristics because of the unbalance of the charge transference.We got the efficiency 8.1 cd/A ( at 14 V) and almost two times luminance from the tandem one at the same current density (670 cd/m2 for 1760 cd/m2 at 20 mA/cm2), most close to the white area of CIE coordinates was (0.30 , 0.37) at 15 V. Its range of CIE coordinates was (0.35 , 0.46)~(0.28 , 0.33) at 8 V~20 V. We have already developed the tandem WOLEDs using single white emitting layer as EL units that have never be reported. It not only maintained the advantages of the tandem structure, but also had excellent stability of luminescent characteristics at wide range operation voltage. We reached our goal to improve the WOLEDs and make it more suitable for commercial applications, especially for the development of light sources.

Trivalent rare earth cations (RE3+) activated nanometre-sized Y2O2S and Gd2O2S phosphors were prepared by converting hydroxycarbonate precursor powders during a firing process. The precursors were prepared using the urea homoprecipitation method. The choice of host crystal and dopant were optimised to meet the specific requirements for practical applications in the field of lighting, X-ray detection, and displays. Parameters that affect the luminescent properties of the resulting phosphors, such as doping concentration, excitation mechanism, firing temperature, and host lattice were investigated. Tb3+ and Er3+ co-doped Y2O2S and Gd2O2S were studied for their upconversion properties under 632.8 nm red laser excitation. The intensities of UC emission were affected by both doping concentration and host lattices. Tb3+ and Er3+ co-doped Y2O2S was found to show strong downconversion from Tb3+ and upconversion from Er3+. The presence of the Er3+ cations directly affects the Tb3+ down-converting properties by acting as centres for energy transfer. The possible energy transfer between Gd3+ and Er3+ should be responsible for the different trend of Er3+ upconversion intensity in Y2O2S and Gd2O2S. It has been established that the Tb3+ and Er3+ co-doped system is superior than the Yb3+ and Er3+ co-doped one. In the latter system the presence of Yb3+ reduces the efficiency of both upconversion and downconversion emission under red laser excitation. These phosphors show potential applications in the security and anti-fraud field. The novel ZnS:Mn QDs were prepared and successfully incorporated into GaN based photonic crystal (PC) holes to efficiently produce white light. The crystal structure and luminescent properties of the ZnS:Mn QDs were investigated as well as the factors affecting the filling rate. Zn1-xCdxS:Mn QDs were also investigated. The addition of Cd cations leads to a red shift in the PL excitation spectra of the Zn1-xCdxS:Mn QDs. The crystal structures and surface properties were also affected by the presence of Cd. Monodisperse PbS QDs with particle size of ~5 nm has been obtained using a similar aqueous reaction method.

Visible-light communication (VLC) has several advantages over the commonly used radio frequency (RF) spectrum, including high bandwidth and low crosstalk. These features have become of more significance, especially as the proliferation of wireless devices increases and causes spectrum crowding. The white light in VLC systems is typically obtained from blue/violet light-emitting diodes (LEDs) and phosphors partially converting blue light into longer wavelength colors spanning the visible-light band. One phosphor that is frequently used is cerium-doped yttrium aluminum garnet (YAG). However, YAG suffers from a low color-rendering index (CRI) and high correlated color temperature (CCT). Lead halide perovskites provide an alternative to YAG and have been extensively utilized for optoelectronic devices owing to their tunable bandgap and high photoluminescence quantum yield (PLQY). However, their drawbacks, e.g., lead toxicity and instability, hinder their widespread application. Herein, in order to take advantage of a high-performance lead-free tin-based halide perovskite phosphor that has a high absolute PLQY of near unity and a wide spectral emission ranging from 500 to 700 nm, we fabricated ultraviolet (UV) micro light-emitting diodes (micro-LEDs) with a peak wavelength at 365 nm to match the peak of the photoluminescence excitation (PLE) spectra of the material to obtain strong yellow-spectrum emission. Together with a blue LED, white light was obtained with a CRI of 84.9 and 4115-K CCT. Despite the long PL lifetime of the perovskite material, which is in the order of μs, a net data rate of 1.5 Mb/s was achieved using orthogonal frequency-division multiplexing (OFDM) with adaptive bit and power loading to take advantage of the exceptionally high PLQY of the phosphor to improve the data throughput of the VLC system using higher modulation orders. Furthermore, through improvements to the nanostructure of lead-free tin-based halide perovskite phosphor and the use of excitation sources with a higher power, the data rate is expected to be even higher. The lead-free nature of this material, along with its wide spectrum and high conversion efficiency, makes it a promising alternative to conventional toxic perovskite-based phosphors. As the first demonstration of VLC links using lead-free perovskite, this study paves the way for safer, more sustainable VLC systems.

Art and optics are inseparable. Though seemingly opposite disciplines, the combination of art and optics has significantly impacted both culture and science as they are now known. As history has run its course, in the sciences, arts, and their fruitful combinations, optical aberrations have proved to be a problematic hindrance to progress. In an effort to eradicate aberrations the simple beauty of these aberrational forms has been labeled as undesirable and discarded. Here, rather than approach aberrations as erroneous, these beautiful forms are elevated to be the photographic subject in a new body of work, On the Bright Side. Though many recording methods could be utilized, this work was composed on classic, medium-format, photographic film using white-light, Michelson interferometry. The resulting images are both a representation of the true light rays that interacted on the distorted mirror surfaces (data) and the artist’s compositional eye for what parts of the interferogram are chosen and displayed. A detailed description of the captivating interdisciplinary procedure is documented and presented alongside the final artwork, CCD digital reference images, and deformable mirror contour maps. This alluring marriage between the arts and sciences opens up a heretofore minimally explored aspect of the inextricable art-optics connection. It additionally provides a fascinating new conversation on the importance of light and optics in photographic composition.

High thermal stability and humidity resistance of phosphor-converted white-light-emitting diodes (PC-WLEDs) using Ce:YAG doped glass, instead of conventional Ce:YAG doped silicone, as a phosphor-converted layer is proposed and fabricated. The glass has five times higher glass transition temperature (Tg) of 750¢J compare with silicone of 150¢J, that could exhibited better performance than silicone, including lumen loss, chromaticity shift, transmittance loss, and peak emission intensity undergoing three industry-standard reliability tests at either high (8wt%) or low (2wt%) doping concentrations of Ce:YAG. The proposed glass phosphor possesses host stability as glass and retains desired fluorescence as Ce:YAG. In thermal aging, thermal shock, and damp heat reliability results, the thermal aging has the largest degradation of lumen loss, but the results showed better thermal stability that the glass phosphor with 22~30% lumen loss improvement for 2~8 wt% Ce:YAG doping than silicone phosphor. The damp heat test has the largest degradation of chromaticity shift, but the results showed excellent humidity resistance that the glass phosphor with highest 49~65% chromaticity shift improvement for 2~8 wt% Ce:YAG doping than silicone phosphor. But under thermal shock test, there isn¡¦t a large difference between glass and silicone phosphor. In this study, we demonstrate the feasibility of adapting glass as a phosphor-converted layer in PC-WLED module that can potentially provide higher reliability and better performance for high-power LEDs, particularly in the area where strict reliability is highly required and in the environment where silicone does not stand for long.

InGaN is a promising semiconductor for solid state lighting thanks to its bandgap which spans the entire visible regime of the electromagnetic spectrum. InGaN is grown heteroepitaxially due to the absence of a native substrate; however, this results in a strained film and a high dislocation density—two effects that have been associated with efficiency droop, which is the disastrous drop in efficiency of a light-emitting diode (LED) as the input current increases. Heteroepitaxially grown nanowires have recently attracted great interest due to their property of eliminating the detrimental effects of the lattice mismatch and the corollary efficiency droop. In this study, InGaN nanowires were grown on a low-cost Si (111) substrate via molecular beam epitaxy. Unique nanostructures, taking the form of mushrooms, have been observed in localized regions on the samples. These nanomushrooms consist of a nanowire body with a wide cap on top. Photoluminescence characterization revealed that the nanowires emit violet-blue, whilst the nanomushrooms emit a broad yellow-orange-red luminescence. The simultaneous emission from the nanowires and nanomushrooms forms white light. Structural characterization of a single nanomushroom via transmission electron microscopy revealed a simultaneous increase in indium and decrease in gallium at the interface between the body and the cap. Furthermore, the cap itself was found to be indium-rich, confirming it as the source of the longer wavelength yellow-orange-red luminescence. It is believed that the nanomushroom cap formed as a consequence of the saturation of growth on the c-plane of the nanowire. It is proposed that the formation of an indium droplet on the tip of the nanowire saturated growth on the c-plane, forcing the indium and gallium adatoms to incorporate on the sidewall m-planes instead, but only at the nanowire tip. This resulted in the formation of a mushroom-like cap on the tip. How and why the indium droplets formed is not entirely clear, but a localized temperature dip may have been the cause. Ultimately, the simultaneous growth of nanowires and nanomushrooms on the same substrate may pave the way to the development of a phosphor-free, efficient, inherent white LED.

This dissertation addresses several theoretical issues in low-finesse fiber optic Fabry-Perot Interferometric (FPI) sensors. The work is divided into two levels: modeling of the sensors, and signal processing based on White-Light-Interferometry (WLI). In the first chapter, the technical background of the low-finesse FPI sensor is briefly reviewed and the problems to be solved are highlighted. A model for low finesse Extrinsic FPI (EFPI) is developed in Chapter 2. The theory is experimentally proven using both single-mode and multimode fiber based EFPIs. The fringe visibility and the additional phase in the spectrum are found to be strongly influenced by the optical path difference (OPD), the output spatial power distribution and the working wavelength; however they are not directly related to the light coherence. In Chapter 3, the Single-Multi-Single-mode Intrinsic FPI (SMS-IFPI) is theoretically and experimentally studied. Reflectivity, cavity refocusing, and the additional phase in the sensor spectrum are modeled. The multiplexing capacity of the sensor is dramatically increased by promoting light refocusing. Similar to EFPIs, wave-front distortion generates an additional phase in the interference spectrogram. The resultant non-constant phase plays an important role in causing abrupt jumps in the demodulated OPD. WLI-based signal processing of the low-finesse FP sensor is studied in Chapter 4. The lower bounds of the OPD estimation are calculated, the bounds are applied to evaluate OPD demodulation algorithms. Two types of algorithms (TYPE I & II) are studied and compared. The TYPE I estimations suffice if the requirement for resolution is relatively low. TYPE II estimation has dramatically reduced error, however, at the expense of potential demodulation jumps. If the additional phase is reliably dependent on OPD, it can be calibrated to minimize the occurrence of such jumps. In Chapter 5, the work is summarized and suggestions for future studies are given. / Ph. D.

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