The rapid growth of the microelectronics industry in the last decades made it possible to produce structures in the sub-micrometer scale on silicon chips and to reach an integration scale under 100 nm. Decreasing the size and increasing the complexity of these structures make a control of quality and defects investigation more difficult. During a long time ultrasound devices are being used for nondestructive investigation of materials, like ultrasound microscopes, scanning photo-acoustic microscopes or scanning electron-acoustic microscopes, where acoustic waves are generated by acoustic transducers, focused laser or electron beams, respectively. The aim of this work is to investigate more precisely the acoustic wave generation by pulsed and periodically modulated ion beams in different solid materials depending on the beam parameters and to demonstrate the possibility to apply an intensity modulated focused ion beam (FIB) for acoustic emission and for nondestructive investigation of the internal structure of materials on a microscopic scale. The combination of a FIB and an ultrasound microscope in one device can provide the opportunity of nondestructive investigation, production and modification of micro- and nanostructures simultaneously. The FIB spot size in modern systems is comparable with that of a focused electron beam and the penetration depth of ions with energy of 20-60 keV is lower than 100 nm. This makes it possible to reach a sub-micrometer resolution of a scanning ion acoustic microscope. On the other hand side a FIB with energy of 20-60 keV is a good tool which can be used for the fabrication of nanostructures using ion milling, implantation or ion beam assisted deposition techniques. The bulk ultrasound emission in a solid was investigated using a pulsed high energy ion beam focused on aluminum, copper, iron and silicon samples. Oxygen, silicon and gold ion beams were applied in charge states from 1+ to 4+ with the pulse duration of 0.5 - 4 µs and an energy of 1.5 - 10 MeV. Intensity of the detected acoustic waves shows a linear dependence on the energy of the incident ions, on the ion flux as well as on the pulse duration. No influence of the ion charge and ion mass to the emission of acoustic waves was observed. The ion acoustic effect was applied for a nondestructive material inspection using intensity modulated FIB providing by the IMSA-100 FIB system with an accelerating potential of 30-35 kV. The achieved lateral resolution of this scanning ion acoustic microscope is in the micrometer range depending on the sample material and the beam modulation frequency. The resolution can be improved by increasing the frequency. The maximal modulation frequency which was obtained at IMSA-100 is about 2 MHz corresponding to lateral resolution of 4-5 µm on silicon. Using this microscope, some images of integrated microstructures on a silicon chip were obtained using the lock-in technique for filtering of the signal from the noise and increasing of the total imaging time. The possibility to visualize near sub-surface structure was demonstrated. Due to the strong sputtering effect and the long time of irradiation the imaged structures were significantly damaged. Si2+, Ge2+, Ga+ and Au+ ions were used. All these ions are quite heavy and have high sputtering coefficients. Long-time imaging improves the quality of acoustic images, i. e. the signal-to-noise ratio is reduced with the square root from the pixel time, but leads to significant erosion of the imaged structure.

Abstract not available.

The rapid growth of the microelectronics industry in the last decades made it possible to produce structures in the sub-micrometer scale on silicon chips and to reach an integration scale under 100 nm. Decreasing the size and increasing the complexity of these structures make a control of quality and defects investigation more difficult. During a long time ultrasound devices are being used for nondestructive investigation of materials, like ultrasound microscopes, scanning photo-acoustic microscopes or scanning electron-acoustic microscopes, where acoustic waves are generated by acoustic transducers, focused laser or electron beams, respectively. The aim of this work is to investigate more precisely the acoustic wave generation by pulsed and periodically modulated ion beams in different solid materials depending on the beam parameters and to demonstrate the possibility to apply an intensity modulated focused ion beam (FIB) for acoustic emission and for nondestructive investigation of the internal structure of materials on a microscopic scale. The combination of a FIB and an ultrasound microscope in one device can provide the opportunity of nondestructive investigation, production and modification of micro- and nanostructures simultaneously. The FIB spot size in modern systems is comparable with that of a focused electron beam and the penetration depth of ions with energy of 20-60 keV is lower than 100 nm. This makes it possible to reach a sub-micrometer resolution of a scanning ion acoustic microscope. On the other hand side a FIB with energy of 20-60 keV is a good tool which can be used for the fabrication of nanostructures using ion milling, implantation or ion beam assisted deposition techniques. The bulk ultrasound emission in a solid was investigated using a pulsed high energy ion beam focused on aluminum, copper, iron and silicon samples. Oxygen, silicon and gold ion beams were applied in charge states from 1+ to 4+ with the pulse duration of 0.5 - 4 µs and an energy of 1.5 - 10 MeV. Intensity of the detected acoustic waves shows a linear dependence on the energy of the incident ions, on the ion flux as well as on the pulse duration. No influence of the ion charge and ion mass to the emission of acoustic waves was observed. The ion acoustic effect was applied for a nondestructive material inspection using intensity modulated FIB providing by the IMSA-100 FIB system with an accelerating potential of 30-35 kV. The achieved lateral resolution of this scanning ion acoustic microscope is in the micrometer range depending on the sample material and the beam modulation frequency. The resolution can be improved by increasing the frequency. The maximal modulation frequency which was obtained at IMSA-100 is about 2 MHz corresponding to lateral resolution of 4-5 µm on silicon. Using this microscope, some images of integrated microstructures on a silicon chip were obtained using the lock-in technique for filtering of the signal from the noise and increasing of the total imaging time. The possibility to visualize near sub-surface structure was demonstrated. Due to the strong sputtering effect and the long time of irradiation the imaged structures were significantly damaged. Si2+, Ge2+, Ga+ and Au+ ions were used. All these ions are quite heavy and have high sputtering coefficients. Long-time imaging improves the quality of acoustic images, i. e. the signal-to-noise ratio is reduced with the square root from the pixel time, but leads to significant erosion of the imaged structure.

Elektro-ultrazvuková spektroskopie je založena na interakci dvou signálů, elektrického střídavého signálu s frekvencí fE a ultrazvukového signálu s frekvencí fU. Ultrazvukový signál mění vzdálenost mezi vodivými zrny ve vzorku a tím mění jeho celkový elektrický odpor R. Změna odporu R je proměnná s frekvencí ultrazvukového signálu fU. Vzorek, který obsahuje mnoho defektů ve své struktuře, vykazuje vysokou změnu odporu R v porovnání se vzorkem bez defektů při stejné hodnotě ultrazvukového a elektrického signálu. V disertační práci je popsána elektro-ultrazvuková metoda na tlustovrstvých rezistorech, hořčíkových slitinách, monokrystalech Si a CdTe, varistorech a také jeden z prvních pokusů aplikace elektro-ultrazvukové spektroskopie na horninové vzorky a tak diagnostikovat jejich stav poškození. V našem případě byl proměřen vzorek žuly. Jelikož se jedná o nedestruktivní metodu testování, tak má tato metoda velmi perspektivní budoucnost. Tato metoda je citlivá na všechny defekty ve vzorku. Její výhodou je, že se měří velikost signálu ne frekvenci danou rozdílem nebo součtem budících frekvencí fE a fU a tím se dá dosáhnout vysoké citlivosti. V mém případě byl vždy měřen signál na rozdílové frekvenci fi = fE-fU.