No description available.

No description available.

Complexos contendo íons de terras raras são de grande interesse na fabricação de dispositivos eletroluminescentes como é o caso do diodo emissor de luz construído com compostos orgânicos (OLED). Esses dispositivos, utilizando íons de terras raras trivalentes (TR3+) como centros emissores, exibem alta luminescência com bandas espectrais extremamente finas devido à estrutura dos seus níveis de energia, tempos de vida longos e a alta eficiência quântica. Este trabalho relata a preparação de complexos de β-dicetonatos (tta - tenoiltrifluoroacetonato e acac - acetilacetonato) de terras raras (Tb3+, Eu3+ e Gd3+) contendo ligante macrocíclico éter coroa (DB18C6 - dibenzo18coroa6) e de filmes poliméricos de UO22+. Os materiais obtidos foram caracterizados por titulação complexométrica com EDTA, análise elementar de CH, espectroscopia de absorção na região do infravermelho, análise termogravimétrica, difratometria de raios X (método do pó) e espectroscopia de luminescência. Na manufatura do dispositivo OLED construído neste trabalho utilizou-se a técnica de deposição física de filmes finos por fase vapor (PVD, Physical Vapor Deposition). / Complexes containing Rare Earth ions are of great interest in the manufacture of electroluminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR3+) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth β-diketonate complexes (Tb3+, Eu3+, Gd3+) and (tta - tenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO22+. The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition).

Complexos contendo íons de terras raras são de grande interesse na fabricação de dispositivos eletroluminescentes como é o caso do diodo emissor de luz construído com compostos orgânicos (OLED). Esses dispositivos, utilizando íons de terras raras trivalentes (TR3+) como centros emissores, exibem alta luminescência com bandas espectrais extremamente finas devido à estrutura dos seus níveis de energia, tempos de vida longos e a alta eficiência quântica. Este trabalho relata a preparação de complexos de β-dicetonatos (tta - tenoiltrifluoroacetonato e acac - acetilacetonato) de terras raras (Tb3+, Eu3+ e Gd3+) contendo ligante macrocíclico éter coroa (DB18C6 - dibenzo18coroa6) e de filmes poliméricos de UO22+. Os materiais obtidos foram caracterizados por titulação complexométrica com EDTA, análise elementar de CH, espectroscopia de absorção na região do infravermelho, análise termogravimétrica, difratometria de raios X (método do pó) e espectroscopia de luminescência. Na manufatura do dispositivo OLED construído neste trabalho utilizou-se a técnica de deposição física de filmes finos por fase vapor (PVD, Physical Vapor Deposition). / Complexes containing Rare Earth ions are of great interest in the manufacture of electroluminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR3+) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth β-diketonate complexes (Tb3+, Eu3+, Gd3+) and (tta - tenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO22+. The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition).

No description available.

No description available.

Copper (Cu) interconnects have been widely used to replace aluminum in ultra-large-scale integration due to low resistivity and superior resistance to electromigration. Current processes for the fabrication of interconnects require thin Cu seed layers before the subsequent Cu filling by electrochemical deposition (ECD). It is crucial that these seed layers are coated conformally and smoothly in vias and trenches, ensuring that the ECD Cu films are free of voids. With the continuous scaling down of device dimensions, atomic layer deposition (ALD) has been considered as the most promising technology for making the Cu seed layers, because of its excellent conformality and precise thickness control. This dissertation is dedicated to the multiscale simulation of Cu ALD using the Cu beta-diketonate precursors (nBu3P)2Cu(acac) and Cu(acac)2. Different co-reactants (H, H2, H2O, O3 and wet O2) were investigated with respect to their application for the ALD of metallic Cu and Cu oxides. While Cu beta-diketonates have been widely applied in ALD, the mechanistic details of the surface reactions are still largely unknown. Ab initio calculations were performed to obtain the input data for reactive molecular dynamics (RMD) simulations and thermodynamic modeling, which were realized at the molecular-scale and macroscale, respectively. / Kupferleitbahnen werden in höchstintegrierten Schaltkreisen aufgrund des niedrigen spezifischen Widerstands und der sehr guten Beständigkeit gegen Elektromigration verwenden. Aktuelle Verfahren zur Leitbahnherstellung erfordern dünne Cu Keimschichten vor der anschließenden Cu Füllung durch die elektrochemische Abscheidung (ECD). Dabei ist es entscheidend, dass diese Keimschichten konform und glatt in den Vias und Gräben abgeschieden werden können, so dass die ECD Cu-Filme frei von Hohlräumen sind. Mit der weiteren Skalierung wird die Atomlagenabscheidung (ALD) mit ihrer hohen Konformalität und der ausgezeichneten Dickensteuerung als die vielversprechendste Technik zur Herstellung der Cu Keimschichten betrachtet. Die vorliegende Dissertation ist der Multiskalensimulation der ALD von metallischem Kupfer und Kupferoxiden aus Cu-beta-Diketonat Präkursoren (nBu3P)2Cu(acac) und Cu(acac)2 gewidmet. Verschiedene Koreaktanden H, H2, H2O, O3 und feuchtes O2 werden hinsichtlich ihrer Anwendung für die ALD von metallischem Kupfer oder Kupferoxid untersucht. Die Mechanismen der Oberflächenreaktionen dieser Präkursoren sind noch weitgehend unbekannt, obwohl die Cu Beta-Diketonate in der ALD bereits breite Verwendung finden. Ab-initio-Rechnungen wurden durchgeführt, um die Eingangsdaten für die reaktive Molekulardynamiksimulation und die thermodynamische Modellierung zu erhalten, die sowohl auf molekularer wie auch auf makroskopischer Ebene durchgeführt wurden.