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1	Lattice defects in beta-silicon carbide grown on (001) silicon by CVD Cheng, Tai-Tsui January 1990 (has links) No description available. Engineering, Materials Science Beta-silicon carbide defects Chemical vapor deposit
2	HeT-SiC-05International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor DevicesApril 26 to May 1, 2005,Hotel Erbgericht Krippen / Germany- Selected Contributions - Skorupa, Wolfgang, Brauer, Gerhard 31 March 2010 (has links) (PDF) This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too. beta-silicon carbide biocompatibility biosensor doped metal oxide epitaxy flash lamp annealing heterostructure high-temperature device hotplate ion implantation luminescence magnetic ion misfit defect pulsed laser deposition resonator sensor silicon carbide simulation stress surface melting zinc oxide
3	HeT-SiC-05International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor DevicesApril 26 to May 1, 2005,Hotel Erbgericht Krippen / Germany- Selected Contributions - Skorupa, Wolfgang, Brauer, Gerhard January 2005 (has links) This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too.

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