In this work the electrical insulating properties of the nanocomposite materials based on poly(ethylene-co-butyl acrylate) filled with alumina nanoparticles are studied. The dielectric properties chosen for the evaluation are the dielectric permittivity and loss as well as the breakdown strength and the pre-breakdown currents. The reason for choosing these particular properties is partly due to the importance of these for the general electrical applications and partly due to the uncertainties involved for these particular properties of the nanocomposite materials. The importance of moisture absorption for the dielectric properties is outlined in this work. All measurements were performed in both dry conditions and after conditioning of the materials in humid environment until saturation. The data for moisture absorption was taken from the water absorption study performed at the Department of Fibre and Polymer Technology, KTH. The dielectric spectroscopy in frequency domain was employed for measuring dielectric permittivity and loss. Havriliak-Negami approximation was used for characterization of the measurement data and at the same time ensuring the fulfillment of the Kramers-Kronig relations. Results from the dielectric spectroscopy study in dry conditions suggest that dielectric spectroscopy can be used for evaluating nanoparticle dispersion in the host matrix, based on correlation between the morphology data obtained from SEM investigation and the scatter in the dielectric loss. The dielectric spectroscopy study performed on the nanocomposites after conditioning in humid environment showed that absorbed moisture has a distinct impact on the dielectric loss. Especially pronounced is its’ influence on the frequency behavior, when the dielectric loss peaks are shifted towards higher frequencies with increased moisture content. The nanocomposite materials characterized by higher specific surface area generally exhibit higher dielectric losses. Surface functionalization of the nanoparticles does not seem to have much influence on the dielectric loss in dry conditions. After conditioning in humid environment, however, the surface modification was shown to have a significant impact. Temperature is another significant factor for the frequency behavior of the dielectric loss: it was found that the studied nanocomposites can be characterized by Arrhenius activation. The breakdown strength and pre-breakdown currents study outlined the influence of moisture as well. The study indicated that surface treatment of the nanoparticles can enhance properties of the nanocomposite materials, namely aminopropyltriethoxy silane was an especially successful choice: • The highest breakdown strength was determined by the study for NDA6 material formulation in dry conditions. • After conditioning in humid environment the NDA6 material continued showing the best breakdown strength among the nanocomposite mate rials, as well as this value was close to the breakdown strength of the reference unfilled material. This study confirms the existence of the optimal nanofiller content or rather optimal specific surface area of the dispersed nanoparticles in the host matrix. The latter is supported by the comparison between the nanocomposites based on nanoparticles with two different specific surface areas, which shows that the dielectric properties worsen, i.e. the dielectric losses increase and the influence of absorbed moisture on the breakdown strength becomes more pronounced, for nanomaterials with larger specific surface area. The pre-breakdown currents were found to follow space-charge limited conduction mechanism reasonably well. The following conduction regimes were identified: constant region (likely due to measurement difficulties at low field strengths), Ohm’s regime, trap-filled-limit regime and trapfree dielectric regime. The breakdown usually occurred either during the trap-filled-limit regime, when the current increased dramatically for the small change in electric field, or during the trapfree dielectric regime. The threshold values between different conduction regimes seem to correlate well with the oxidation induction times (OIT), which in turn depend on the total specific surface area. The pre-breakdown currents tend to be highest for the materials filled with the untreated nanoparticles. Increased absorbed moisture content causes higher pre-breakdown currents for the nanocomposite materials, while for the reference unfilled material the pre-breakdown currents do not show such tendency. Generally it can be said that the repeatability in the measured data is higher for the nanocomposite materials in comparison to the unfilled host material, as was demonstrated by both dielectric spectroscopy and breakdown studies. / <p>QC 20130207</p>

To study electron emissions and dark currents in the accelerating structures in particle colliders, a test facility with a spectrometer has been constructed at CERN. This spectrometer has been simulated in the C++ toolkit GEANT4 and in this project the simulation has been improved to handle new realistic input data of the emitted electrons. The goal was to find relations between where the electrons are emitted inside the accelerating structure and the energy or position of the particles measured by the spectrometer. The result was that there is a linear relation between the initial position of the electrons and the width in the positions of the particles measured by the spectrometer. It also appears to be a relations between energy the emitted electrons get in the accelerating structure, which is related to the position, and the energy they deposit in the spectrometer. Further studies where the simulations are compared with real measurement data are required to determine whether these relations are true or not, find better reliability in the relations and get a better understanding of the phenomena.

In the last three decades, the electronic industry has registered a tremendous progress. The continuous and aggressive downsizing of the transistor feature sizes (CMOS scaling) has been the main driver of the astonishing growth and advancement of microelectronic industry. Currently, the CMOS scaling is almost reaching its limits. The gate oxide is now only a few atomic layers thick, and this extremely thin oxide causes a huge leakage current through the oxide. Therefore, a further reduction of the gate oxide thickness is extremely difficult and new materials with higher dielectric constant are being explored. However, the phenomena of oxide breakdown and reliability are still serious issues in these thin oxides. Oxide breakdown exhibits a soft breakdown behavior at low voltages, and this is posing as one of the most crucial reliability issues for scaling of the ultra-thin oxides. In addition, the stress-induced leakage current (SILC) due to oxide has emerged as a scaling problem for the non-volatile memory technologies. In this dissertation, a percolation modeling approach is introduced to study and understand the dramatic changes in the conductivity of a disordered medium. Two different simulation methods of percolative conduction, the site and bond percolation, are studied here. These are used in simulating the post-breakdown conduction inside the oxide. Adopting a Monte-Carlo method, oxide breakdown is modeled using a 2-D percolation theory. The breakdown statistics and post-breakdown characteristics of the oxide are computed using this model. In this work, the effects of different physical parameters, such as dimension and the applied stress are studied. The simulation results show that a thinning of oxide layer and increasing the oxide area result in softening of breakdown. It is observed that the breakdown statistics appear to follow Weibull characteristics. As revealed by simulations, the Weibull slope changes linearly with oxide thickness, while not having a significant change when the area is varied and when the amount of the applied stress is varied. It is shown that the simulation results are well correlated with the experimental data reported in the literature. In this thesis, studying the conduction through the oxide using percolation model, it was discovered that a critical or a quasi-critical phenomenon occurs depending on the oxide dimensions. The criticality of the phase-transition results in a hard breakdown while the soft breakdown occurs due to a quasi-critical nature of percolation for ultra-thin oxides. In the later part of the thesis, a quantum percolation model is studied in order to explain and model the stress induced leakage current. It is explained that due to the wave nature of electrons, the SILC can be modeled as a tunneling path through the stressed oxide with the smaller tunneling threshold compared to the virgin oxide. In addition to the percolation model, a Markov chain theory is introduced to simulate the movement of electron as a random walk inside the oxide, and the breakdown is simulated using this random-walk of electron through the accumulated traps inside the oxide. It is shown that the trapping-detrapping of electrons results in an electrical noise in the post-breakdown current having 1/f noise characteristics. Using simulation of a resistor network with Markov theory, the conductance of the oxide is computed. An analytical study of a 2-D site percolation system is conducted using recursive methods and useful closed-form expressions are derived for specialized networks.

In the last three decades, the electronic industry has registered a tremendous progress. The continuous and aggressive downsizing of the transistor feature sizes (CMOS scaling) has been the main driver of the astonishing growth and advancement of microelectronic industry. Currently, the CMOS scaling is almost reaching its limits. The gate oxide is now only a few atomic layers thick, and this extremely thin oxide causes a huge leakage current through the oxide. Therefore, a further reduction of the gate oxide thickness is extremely difficult and new materials with higher dielectric constant are being explored. However, the phenomena of oxide breakdown and reliability are still serious issues in these thin oxides. Oxide breakdown exhibits a soft breakdown behavior at low voltages, and this is posing as one of the most crucial reliability issues for scaling of the ultra-thin oxides. In addition, the stress-induced leakage current (SILC) due to oxide has emerged as a scaling problem for the non-volatile memory technologies. In this dissertation, a percolation modeling approach is introduced to study and understand the dramatic changes in the conductivity of a disordered medium. Two different simulation methods of percolative conduction, the site and bond percolation, are studied here. These are used in simulating the post-breakdown conduction inside the oxide. Adopting a Monte-Carlo method, oxide breakdown is modeled using a 2-D percolation theory. The breakdown statistics and post-breakdown characteristics of the oxide are computed using this model. In this work, the effects of different physical parameters, such as dimension and the applied stress are studied. The simulation results show that a thinning of oxide layer and increasing the oxide area result in softening of breakdown. It is observed that the breakdown statistics appear to follow Weibull characteristics. As revealed by simulations, the Weibull slope changes linearly with oxide thickness, while not having a significant change when the area is varied and when the amount of the applied stress is varied. It is shown that the simulation results are well correlated with the experimental data reported in the literature. In this thesis, studying the conduction through the oxide using percolation model, it was discovered that a critical or a quasi-critical phenomenon occurs depending on the oxide dimensions. The criticality of the phase-transition results in a hard breakdown while the soft breakdown occurs due to a quasi-critical nature of percolation for ultra-thin oxides. In the later part of the thesis, a quantum percolation model is studied in order to explain and model the stress induced leakage current. It is explained that due to the wave nature of electrons, the SILC can be modeled as a tunneling path through the stressed oxide with the smaller tunneling threshold compared to the virgin oxide. In addition to the percolation model, a Markov chain theory is introduced to simulate the movement of electron as a random walk inside the oxide, and the breakdown is simulated using this random-walk of electron through the accumulated traps inside the oxide. It is shown that the trapping-detrapping of electrons results in an electrical noise in the post-breakdown current having 1/f noise characteristics. Using simulation of a resistor network with Markov theory, the conductance of the oxide is computed. An analytical study of a 2-D site percolation system is conducted using recursive methods and useful closed-form expressions are derived for specialized networks.