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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 31 to 40 of 552 (0.098 seconds)Spelling suggestions: "subject:"chemicalsolutiondeposition"" "subject:"chemicalcomposition""
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Numerical Simulation of Showerhead performance in Chemical Vapor DepositionLin, Yi-Cheng 01 July 2003 (has links)
Low pressure chemical vapor deposition (LPCVD) is one of the important technics in the semiconductor process recently. The computer simulation is the best efficient method on the process research. This research use numerical method to study the performance of showerhead parameters, and to confer the flow field distribution and deposition rate under different design parameters in LPCVD of silicon (Si).
In this simulation, the CVD reactor modelings are constructed and discredited by using implicit finite volume method. The grids are arranged in a staggered manner for the discretization of the governing equations. Then the SIMPLE-type algorithm is used to solve all of the discretized algebra equations. The variable parameters are: (1) the inlet velocity, (2) the holes diameter of showerhead, (3) the showerhead size.
The results show that using the showerhead can adjust the flow filed distribution and it is better for film thickness uniformity. The holes diameter and distribution density have relations with film uniformity. We also proved that the growth rate increase with the inlet velocity under the some conditions.
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| 32 |
The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor depositionWong, Michael Ming. January 2003 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.
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| 33 |
The design, processing, and characterization of group III-nitride diode devices grown by metalorganic chemical vapor depositionZhu, Tinggang. January 2003 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.
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| 34 |
Characterization of growth and thermal behaviors of thin films for the advanced gate stack grown by chemical vapor depositionTaek Soo, Jeon 27 April 2011 (has links)
Not available / text
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| 35 |
The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor depositionWong, Michael Ming 27 July 2011 (has links)
Not available / text
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| 36 |
The design, processing, and characterization of group III-nitride diode devices grown by metalorganic chemical vapor depositionZhu, Tinggang 27 July 2011 (has links)
Not available / text
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| 37 |
Design and synthesis of volatile compounds for chemical vapor deposition of electronic materialsMatthews, Jason Shastri 05 1900 (has links)
No description available.
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| 38 |
Electroless deposition of copper for microelectronic applicationsKrishnan, Vidya 08 1900 (has links)
No description available.
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| 39 |
Carbon deposition for artificial heart valves using liquid reagent CVDWatson, Stuart Kent 08 1900 (has links)
No description available.
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| 40 |
Feasibility study of the chemical vapor infiltration of rheniumEllzey, Karen Elizabeth 05 1900 (has links)
No description available.
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