Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2005. / Includes bibliographical references. Also available in electronic version.

En dépit du développement rapide de la médecine, les maladies cardiovasculaires restent la première cause de mortalité dans le monde. En France, chaque année, plus de 50 000 personnes meurent subitement en raison d'arythmies cardiaques. L'identification des patients à risque élevé de décès soudain est toujours un défi. Pour détecter les arythmies cardiaques, actuellement Holter est généralement utilisé pour enregistrer les signaux électrocardiogramme (ECG) à 1~3 dérivations pendant 24h à 72h. Cependant l'utilisation de Holter est limitée parmi la population en raison de son encombrement (pas convivial) et de son coût. Un Holter mono puce portable nommé SoC-Holter qui permet d'enregistrer 1 à 4 dérivations est introduit. Le déploiement d'un réseau de capteurs sans fil exige que chaque SoC-Holter soit peu encombrant et peu cher, et consomme peu d’énergie. Afin de minimiser la consommation d'énergie et le coût du système, la technologie Complementary Metal Oxide Semiconductor (CMOS) (0.35μm) est utilisée pour la première implémentation de SoC-Holter. Puis une nouvelle méthode de détection basée sur Acquisition Comprimée (CS) est introduite pour résoudre les problèmes de consommation d'énergie et de capacité de stockage de SoC-Holter. Le principe premier de cette plate-forme est d'échantillonner les signaux ECG sous la fréquence de Nyquist ‘sub-Nyquist’ et par la suite de classer directement les mesures compressées en états normal et anormal. Minimiser le nombre de fils qui relient les électrodes à la plate-forme peut rendre l’utilisateur de SoC-Holter plus confortable, car deux électrodes sont très proches sur la surface du corps. La différence ECG enregistrée est analysée à l'aide de Vectocardiogramme (VCG). Les résultats expérimentaux montrent qu'une approche intégrée, à faible coût et de faible encombrement (SoC-Holter) est faisable. Le SoC-Holter consomme moins de 10mW en fonctionnement. L'estimation des paramètres du signal acquis est effectuée directement à partir de mesures compressées, éliminant ainsi l'étape de la reconstruction et réduisant la complexité et le volume des calculs. En outre, le système fournit les signaux ECG compressés sans perte d'information, de ce fait il réduit significativement la consommation d'énergie pour l'envoi de message et l’espace de stockage mémoire. L'effet de placement des électrodes est évalué sur la QRS complexe lorsqu'il a enregistré avec deux électrodes adjacentes. La méthode est basée sur l'algorithme de ‘QRS-VCG loop alignment’. La méthode moindre carré est utilisée pour estimer la corrélation entre une boucle VCG observée et une boucle de référence en respectant les transformations de rotation et la synchronisation du temps. Les emplacements d'électrodes les moins sensibles aux interférences sont étudiés. / According to the figures released by World Health Organization (WHO), cardiovascular disease is the number one cause of death in the world. In France every year more than 50,000 people die suddenly due cardiac arrhythmias. Identification of high risk sudden death patients is still a challenge. To detect cardiac arrhythmias, currently Holter is generally used to record 1~4 leads electrocardiogram (ECG) signals during 24h to 72h. However the use of Holter is limited among the population due to its form factor (not user-friendly) and cost. An integrated single chip wearable Holter named SoC-Holter that enables to record 1 to 4 leads ECG is introduced. Deployment of wireless sensor network requires each SoC-Holter with less power consumption, low-cost charging system and less die area.To minimize energy consumption and system cost, Complementary Metal Oxide Semiconductor (CMOS) technology (0.35μm) is used to prototype the first implementation of SoC-Holter. Then a novel method based on Compressed Sensing (CS) technique is introduced for solving the problems of power consumption and storage capacity of SoC-Holter. The main principle underlying this framework is to sample analog signals at sub-Nyquist rate and to classify directly compressed measurement into normal and abnormal state. Minimizing the wire connected electrodes to the platform can make the carrier more comfortable because two electrodes are attached closely on the surface of the body. Recording difference ECG is analyzed using Vectorcardiogram (VCG) theory. Experimental results show that an integrated, low cost, and user-friendly SoC-Holter is feasible. SoC-Holter consumes less than 10mW while the device is operating. It takes advantage of estimating parameters directly from compressed measurements, thereby eliminating the reconstruction stage and reducing the computational complexity on the platform. In addition, the framework provides compressed ECG signals without loss of information, reducing significantly the power consumption for message sending and memory storage space. The effect of electrode placement is evaluated by estimating QRS complex in recorded ECG signals by two adjacent electrodes. The method is based on the QRS-VCG loop alignment algorithm that estimates Least Square (LS) between an observed VCG loop and a reference loop with respect to the transformations of rotation and time synchronization. The electrode location with less sensitive to interference is investigated.

Three-Dimensional (3D) optical range-imaging is a field experiencing rapid growth, expanding into a wide variety of machine vision applications, most recently including consumer gaming. Time of Flight (ToF) cameras, akin to RADAR with light, sense distance by measuring the round trip time of modulated Infra-Red (IR) illumination light projected into the scene and reflected back to the camera. Such systems generate 'depth maps' without requiring the complex processing utilised by other 3D imaging techniques such as stereo vision and structured light. Existing range-imaging solutions within the ToF category either perform demodulation in the analogue domain, and are therefore susceptible to noise and non-uniformities, or by digitally detecting individual photons using a Single Photon Avalanche Diode (SPAD), generating large volumes of raw data. In both cases, external processing is required in order to calculate a distance estimate from this raw information. To address these limitations, this thesis explores alternative system architectures for ToF range imaging. Specifically, a new pixel concept is presented, coupling a SPAD for accurate detection of the arrival time of photons to an all-digital Phase- Domain Delta-Sigma (PDΔΣ) loop for the first time. This processes the SPAD pulses locally, converging to estimate the mean phase of the incoming photons with respect to the outgoing illumination light. A 128×96 pixel sensor was created to demonstrate this principle. By incorporating all of the steps in the range-imaging process – from time resolved photon detection with SPADs, through phase extraction with the in-pixel phase-domain ΔΣ loop, to depth map creation with on-chip decimation filters – this sensor is the first fully integrated 3D camera-on-achip to be published. It is implemented in a 130nm CMOS imaging process, the most modern technology used in 3D imaging work presented to date, enabled by the recent availability of a very low noise SPAD structure in this process. Excellent linearity of ±5mm is obtained, although the 1σ repeatability error was limited to 160mm by a number of factors. While the dimensions of the current pixel prevent the implementation of very high resolution arrays, the all-digital nature of this technique will scale well if manufactured in a more advanced CMOS imaging process such as the 90nm or 65nm nodes. Repartitioning of the logic could enhance fill factor further. The presented characterisation results nevertheless serve as first validation of a new concept in 3D range-imaging, while proposals for its future refinement are presented.

Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented. / Singapore-MIT Alliance (SMA)

Thesis (Ph. D.)--University of Florida, 2005. / Title from title page of source document. Document formatted into pages; contains 157 pages. Includes vita. Includes bibliographical references.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references (leaves 59-61). Also available in electronic version. Access restricted to campus users.

Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show excellent rectifying performance. Due to the ultra-thin nature of MoS2, the operation of hybrid vdWHs is gate-tunable, and we further discover such gate-tunability depends on the layer number of MoS2, i.e., the screening effect. The detailed study in such hybrid vdWHs provides valuable information for understanding the switching performance of junctions contain 2D materials.

This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for scientific imaging applications. CMOS APS offer a number of advantages over the established charge-coupled device (CCD) technology, primarily in the areas of low power consumption, high-speed parallel readout and random (X-Y) addressing, increased system integration and improved radiation hardness. The investigation used a range of newly designed Test Structures in conjunction with a range of custom developed test equipment to characterise device performance. Initial experimental work highlighted the significant non-linearity in the charge conversion gain (responsivity) and found the read noise to be limited by the kTC component due to resetting of the pixel capacitance. The major experimental study investigated the contribution to dark signal due to hot-carrier injection effects from the in-pixel transistors during read-out and highlighted the importance of the contribution at low signal levels. The quantum efficiency (QE) and cross-talk were also investigated and found to be limited by the pixel fill factor and shallow depletion depth of the photodiode. The work has highlighted the need to design devices to explore the effects of individual components rather than stand-alone imaging devices and indicated further developments are required for APS technology to compete with the CCD for high-end scientific imaging applications. The main areas requiring development are in achieving backside illuminated, deep depletion devices with low dark signal and low noise sampling techniques.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 143-145). Also available in electronic format on the Internet.

Orientadores: Peter Jurgen Tatsch, Stanislav A. Moshkalev / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-21T09:15:24Z (GMT). No. of bitstreams: 1 Nunes_AlcineiMoura_D.pdf: 5060090 bytes, checksum: 2e93ff0bc8213b48460167d7e4cbbcc3 (MD5) Previous issue date: 2012 / Resumo: Neste trabalho foram desenvolvidas cinco aplicações de processos de corrosão por plasmas frios (temperatura ambiente), utilizando reatores dos tipos RIE (Corrosão por Íon Reativo) e ICP (Plasma Acoplado Indutivamente): Afinamento de porta de transistor CMOS - métodos convencionais como fotogravação, com resolução maior que 2 ?m, e corrosão por plasma em um reator RIE com as misturas gasosas SF6/CF4/CHF3 e SF6/CF4/N2, foram utilizados na obtenção de estruturas submicrométricas. A pressão foi variada de 50 mTorr a 150 mTorr e a potência de 30 W a 85 W. Corrosão de estruturas GaAs e AlGaAs para aplicação em transistores HEMT - as corrosões foram realizadas em um reator RIE com misturas de gás contendo SiCl4/Ar para a corrosão e O2/SF6/Ar para processo de limpeza da câmara; Corrosão de corpo para fabricação de sensores de pressão - foi utilizado um reator ICP e plasma de mistura gasosa SF6/Ar; Corrosão profunda para separação de patilhas utilizando métodos convencionais - foi utilizado um reator ICP para corrosão profunda dos canais. As misturas gasosas foram SF6/Ar, com polarização do eletrodo inferior para corrosão de Si (silício), e O2/Ar para remoção de fotorresiste; Teste de resistência de máscaras de Ni-P, Ni-B e SiO2 em processos de corrosão profunda e do tipo Bosch - as máscaras foram testadas em um reator ICP com plasma de misturas gasosas SF6/Ar e C4/F8. Em cada uma das aplicações foi feito um estudo sobre seus principais requerimentos, a fim de se obter o melhor compromisso entre os parâmetros do processo de corrosão / Abstract: This thesis is based on etching processes applications in cold plasmas (room temperature) using RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma), as reactors, applied to specific areas of microelectronics and MEMS devices in semiconductors industries and laboratories. Five applications are presented: Thinning gate CMOS Transistor - conventional methods such as photolithography with resolution greater than 2 ?m and RIE reactor with gaseous mixtures: SF6/CF4/CHF3 and SF6/CF4/N2 were used to obtain structures below 1 ?m; GaAs and AlGaAs structures etching for HEMT transistors application - RIE reactor and mixtures containing SiCl4/Ar for etching and O2/SF6/Ar for cleaning were used; Bulk etching for pressure sensors - ICP reactor and gas mixture SF6/Ar were used; Deep Si etching for die separating - ICP reactor and gas mixtures SF6/Ar with bias for channel etching and O2/Ar for photoresist removal were used; Ni-P, Ni-B and SiO2 masks testing in deep etching processes - ICP reactor and gas mixtures as SF6/Ar and C4/F8 were used. In each applications a study of its main requirements was made, to achieve a better commitment between the parameters of the etching process / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor em Engenharia Elétrica