<p> In this thesis, the current-voltage (I-V) behaviour of Liquid Organic Field-Effect Transistor (LOFET) was systematically studied with respect to the gate voltage, channel length and channel fluid. LOFETs in both internal and external gate modes were successfully fabricated in four-probe configuration. </p> <p> It was discovered that the effect of gate voltage on the source-to-drain current of LOFETs was significant. The drain current clearly increased when the gate voltage increased. This phenomenon was found in all LOFETs samples with different channel fluids and channel lengths. In addition, it was also proved that anions are the majority carriers in LOFETs. The concentration of anions inside the LOFET channel increased while applying a larger voltage to the gate, resulted in an increase of the drain current. This achievable gate modulation set up a solid foundation for further research on the manipulation of ionic and molecular species. </p> <p>It was also obtained that the drain current was changed with variable channel lengths. The current through the LOFET channel decreased while the channel length increased. At the same time, the difference between drain current in various channels evidently increased when the gate voltage increased from 0 to 5V. This was found to be due to the anion concentration change with varying gate voltages. </p> <p> The drain currents through LOFET channels filled with fluids of different polarities were also measured. It was observed that when the polarity of the molecule increased from that of 4,4'-Dihydroxybiphenyl to that of 2-Amino-4 Phenylphenol, the drain current increased significantly. At the same time, the difference between drain current in specific solutions was also more significant, when applying higher voltage to the gate. Combining these results with the gate modulation above, there is great potential of developing new sensing techniques and even logic operation in the future. </p> <p> This work represents a step towards a new group of cheap and effiecient electronic components of LOFETs. Guided by systemic observations from the effects of gate voltage, channel length and fluid structure, there is no doubt that LOFET will become a more attractive research topic because of its promising advantages, such as easy fabrication, low cost and its highly sensitive response. </p> / Thesis / Master of Applied Science (MASc)

In this study numerical modelling of a moderate pressure DC glow discharge plasma is car- ried out in 1D and 2D geometry. The governing equations include continuity equations for the plasma species (electrons, positive ions and metastable atoms), the electron energy equation (EEE), Poisson equation for the electric

Due to their extraordinary electronic properties, Quantum Dots (QDs) are potentially very useful nanoscale devices and research tools. As their electrons are confined in all three dimensions, the energy spectra of QDs is descrete, similar to atoms and molecules. Because the gaps between these energy levels is inversely related to the size of the QD, very small QDs are desirable. Carbon nanotubes have long been touted as fundamental units of nanotechnology, due to their structural, optical and electronic properties, many of which are a result of the confinement of electrons in the trans-axial plane of the nanotube. It is known that their band gap structure is altered under deformation of their cross section. It is proposed that one way to fabricate a very small quantum dot is by confining electrons in the nanotube so that they may not freely move along its length. A structure to produce this confinement has been described elsewhere, namely the carbon nanotube cross, consisting of two carbon nanotubes, with the the one draped over the other at ninety degrees. It is thought that this structure will induce local physical deformations in the nanotube, resulting in local changes in electronic structure of the top nanotube at the junction of the cross. These band gap shifts may cause metal-semiconductor transitions, resulting in tunnel barriers that axially the confine electrons in the nanotube. This thesis investigates the possibility that the carbon nanotube cross may exhibit QD behavior at the junction of the cross, due to these local band gap shifts. A device for carbon nanotube growth, using Chemical Vapor Deposition, has been designed, and may be built using microfabrication techniques. This device consists of electrodes (for electrical measurements of the nanotubes) and catalyst regions (to initiate nanotube growth), lithographically patterned in a configuration that promotes carbon nanotube formation. Unfortunately, due to fabrication issues, this effort is a work in progress, and these devices have not yet been constructed. However, an experimental methodolgy has been developed, which provides a framework for eventually building a carbon nanotube cross, and investigating the possibility of QD behavior at the junction of the cross. This structure has also been investigated computationally. Molecular dynamics simulations were used to obtain equilibrium geometries of the carbon nanotube cross, and it was found that their are many different meta stable states, corresponding to different types of nanotube, and different physical arrangements of these nanotubes. The electronic structure of the carbon nanotube cross was calculated using the density functional theory. Band gap energies similar to experimental values were obtained. A one-to-one spatial correlation between deformation and band gap and conduction band shifts were observed in the top carbon nanotube of the nanotube cross. Small tunnel barriers, inferred from both the calculated band gap and LUMO energies, are observed, and could well be sufficient to confine electrons along the axis of the nanotube. The results described in this thesis, while not definitive, certainly indicate that a QD probably would form at the junction of a carbon nanotube cross, and that further investigation, both experimental and computational, is warranted.

SYNTHESIS, CHARACTERIZATION, AND ELECTRICAL PROPERTIES OF DIAZOPHENYLENE AND DIAZODIPHENYLENE BRIDGED Co, Ni, Cu, Ce, AND Er PHTHALOCYANINE POLYMERS Alkan, Cemil M. Sc., Department of Polymer Science and Technology Supervisor: Prof.Dr. Leyla Aras Co- Supervisor: Prof.Dr. G&uuml / ng&ouml / r G&uuml / nd&uuml / z September 2004, 112 pages In this research, diazophenylene and diazodiphenylene bridged metal-phthalocyanine polymers were produced from diazonium salt of diaminophenylene/bensidin and pre-synthesized tetraamino metal phthalocyanines. Tetraamino metal phthalocyanine complexes of Co, Ni, Cu, Ce, and Er were obtained by reducing tetranitro metal phthalocyanine complexes synthesized from 3-nitrophthalic anhydride, urea, metal salt, and ammonium molybdate catalyst. Complexes and polymers were characterized by Fourier Transform Infrared Radiation (FTIR) and UV-Visible spectroscopies. X-Ray analysis showed that there were short range orientations in the polymers. Thermal analysis of the complexes and the polymers were done by differential scanning calorimetry and thermal gravimetric analysis at a heating rate of 10&amp / #61616 / Cmin&amp / #61485 / 1 under nitrogen atmosphere. Ash analysis was performed to determine the metal content of the polymers. Viscosity and ebullioscopy measurements of the soluble part of the polymers were carried out in THF at 25&amp / #61616 / C. Scanning electron microscopy were used for morphology investigations of the polymers. Four probe conductivity measurements showed that electrical conductivity of the polymers increased according to the metallic conductivity of the metal at the center of the phthalocyanine units. When doped with iodine, the polymer samples showed 104 fold increase in their conductivities. Current-Voltage (I-V) measurements showed that the polymers were optically sensitive and semiconductors. Electrochemical analysis of the soluble part of the polymers were determined in tributylamine perchlorite+dichloromethane mixture utilizing cyclic voltammetry (CV).

This diploma thesis deals with the tracking of the maximum power point for photovoltaic panels and the methods used to achieve it. On this basis, two methods were designed and programmed and subsequently tested on three types of photovoltaic panels. In conclusion methods were appraised.

The master thesis deals with design of a switched DC power supply with output parameters of 30 V 60 A. The power supply uses the connection of two single switch forward converters with opposite phase. The topology was chosen based on a comparison of specific schematics in the first part. The body of the thesis is covered in chapter which deals with design and analysis of power circuits of the converter. The chapter describes detailed design of pulse transformers, dimensioning of semiconductors and cooling system of the converter. For lower power losses, the system of synchronous rectifying is chosen at the output of the circuit. The regulation of the output is based on cascade structure with a superior voltage and dependent current loop. Appropriate over current protection is provided by sensing the output current and using current transformers for primary current measure.

In this doctoral thesis the two dimensional material graphene has been studied in depth with particular respect to Zener tunnelling devices. From the hexagonal structure the Hamiltonian at a Dirac point was derived with the option of including an energy gap. This Hamiltonian was then used to obtain the tunnelling properties of various graphene nano-devices; the devices studied include Zener tunnelling potential barriers such as single and double graphene potential steps. A form of the Landauer formalism was obtained for graphene devices. Combined with the scattering properties of potential barriers the current and conductance was found for a wide range of graphene nano-devices. These results were then compared to recently obtained experimental results for graphene nano-ribbons, showing many similarities between nano-ribbons and infinite sheet graphene. The methods studied were then applied to materials which have been shown to possess three dimensional Dirac cones known as topological insulators. In the case of Cd3As2 the Dirac cone is asymmetrical with respect to the z-direction, the effect of this asymmetry has been discussed with comparison to the symmetrical case.

Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. Among them,one of the most important and critical factors is the formationof low resistivity Ohmic contacts and high-temperature stableSchottky diodes on silicon carbide. In this thesis, different metals (TiW, Ti, TiC, Al, and Ni)and different deposition techniques (sputtering andevaporation) were suggested and investigated for this purpose.Both electrical and material characterizations were performedusing various techniques, such as I-V, C-V, RBS, XRD, XPS,LEED, SEM, AFM, and SIMS. For the Schottky contacts to n- and p-type 4H-SiC, sputteredTiW Schottky contacts had excellent rectifying behavior afterannealing at 500 ºC in vacuum with a thermally stableideality factor of 1.06 and 1.08 for n- and p-type,respectively. It was also observed that the SBH for p-type SiC(ΦBp) strongly depends on the choice the metal with alinear relationship ΦBp= 4.51 - 0.58Φm, indicating no strong Fermi-level pinning.Finally, the behavior of Schottky diodes was investigated byincorporation of size-selected Au nano-particles in Ti Schottkycontacts on silicon carbide. The reduction of the SBH isexplained by using a simple dipole layer approach, withenhanced electric field at the interface due to the small sizeof the circular patch (Au nano-particles) and large differenceof the barrier height between two metals (Ti and Au) on both n-and p-SiC. For the Ohmic contacts, titanium carbide (TiC) was used ascontacts to both n- and p-type 4H-SiC epilayers as well as onAl implanted layers. The TiC contacts were epitaxiallydeposited using a co-evaporation method with an e-beam Tisource and a Knudsen cell for C60, in a UHV system at low substrate temperature(500 ºC). In addition, we extensively investigatedsputtered TiW (weight ratio 30:70) as well as evaporated NiOhmic contacts on both n- and p-type epilayers of SiC. The bestOhmic contacts to n-type SiC are annealed Ni (&gt;950ºC)with the specific contact resistance of ≈ 8× 10-6Ω cm2with doping concentration of 1.1 × 10-19cm-3while annealed TiW and TiC contacts are thepreferred contacts to p-type SiC. From long-term reliabilitytests at high temperature (500 ºC or 600 ºC) invacuum and oxidizing (20% O2/N2) ambient, TiW contacts with a platinum cappinglayer (Pt/Ti/TiW) had stable specific contact resistances for&gt;300 hours. <b>Keywords</b>: silicon carbide, Ohmic and Schottky contacts,co-evaporation, current-voltage, capacitance-voltagemeasurement, power devices, nano-particles, Schottky barrierheight lowering, and TLM structures.

<p>Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. Among them,one of the most important and critical factors is the formationof low resistivity Ohmic contacts and high-temperature stableSchottky diodes on silicon carbide.</p><p>In this thesis, different metals (TiW, Ti, TiC, Al, and Ni)and different deposition techniques (sputtering andevaporation) were suggested and investigated for this purpose.Both electrical and material characterizations were performedusing various techniques, such as I-V, C-V, RBS, XRD, XPS,LEED, SEM, AFM, and SIMS.</p><p>For the Schottky contacts to n- and p-type 4H-SiC, sputteredTiW Schottky contacts had excellent rectifying behavior afterannealing at 500 ºC in vacuum with a thermally stableideality factor of 1.06 and 1.08 for n- and p-type,respectively. It was also observed that the SBH for p-type SiC(Φ_Bp) strongly depends on the choice the metal with alinear relationship Φ_Bp= 4.51 - 0.58Φ_m, indicating no strong Fermi-level pinning.Finally, the behavior of Schottky diodes was investigated byincorporation of size-selected Au nano-particles in Ti Schottkycontacts on silicon carbide. The reduction of the SBH isexplained by using a simple dipole layer approach, withenhanced electric field at the interface due to the small sizeof the circular patch (Au nano-particles) and large differenceof the barrier height between two metals (Ti and Au) on both n-and p-SiC.</p><p>For the Ohmic contacts, titanium carbide (TiC) was used ascontacts to both n- and p-type 4H-SiC epilayers as well as onAl implanted layers. The TiC contacts were epitaxiallydeposited using a co-evaporation method with an e-beam Tisource and a Knudsen cell for C₆₀, in a UHV system at low substrate temperature(500 ºC). In addition, we extensively investigatedsputtered TiW (weight ratio 30:70) as well as evaporated NiOhmic contacts on both n- and p-type epilayers of SiC. The bestOhmic contacts to n-type SiC are annealed Ni (>950ºC)with the specific contact resistance of ≈ 8× 10^-6Ω cm²with doping concentration of 1.1 × 10^-19cm^-3while annealed TiW and TiC contacts are thepreferred contacts to p-type SiC. From long-term reliabilitytests at high temperature (500 ºC or 600 ºC) invacuum and oxidizing (20% O₂/N₂) ambient, TiW contacts with a platinum cappinglayer (Pt/Ti/TiW) had stable specific contact resistances for>300 hours.</p><p><b>Keywords</b>: silicon carbide, Ohmic and Schottky contacts,co-evaporation, current-voltage, capacitance-voltagemeasurement, power devices, nano-particles, Schottky barrierheight lowering, and TLM structures.</p>

In this study, silicon nanocrystals (NC) were synthesized in silicon dioxide matrix by ion implantation followed by high temperature annealing. Annealing temperature and duration were varied to study their effect on the nanocrystal formation and optical properties. Implantation of silicon ions was performed with different energy and dose depending on the oxide thickness on the silicon substrate. Before device fabrication, photoluminescence (PL) measurement was performed for each sample. From PL measurement it was observed that, PL emission depends on nanocrystal size determined by the parameters of implantation and annealing process. The peak position of PL emission was found to shifts toward higher wavelength when the dose of implanted Si increased. Two PL emission bands were observed in most cases. PL emission around 800 nm originated from Si NC in oxide matrix. Other emissions can be attributed to the luminescent defects in oxide or oxide/NC interface. In order to see electroluminescence properties Light Emitting Devices (LED) were fabricated by using metal oxide semiconductor structure, current-voltage (I-V) and electroluminescence (EL) measurements were conducted. I-V results revealed that, current passing through device depends on both implanted Si dose and annealing parameters. Current increases with increasing dose as one might expect due to the increased amount of defects in the matrix. The current however decreases with increasing annealing temperature and duration, which imply that, NC in oxide behave like a well controlled trap level for charge transport. From EL measurements, few differences were observed between EL and PL results. These differences can be attributed to the different excitation and emission mechanisms in PL and EL process. Upon comparision, EL emission was found to be inefficient due to the asymmetric charge injection from substrate and top contact. Peak position of EL emission was blue shifted with respect to PL one, and approached towards PL peak position as applied voltage increased. From the results of the EL measurements, EL emission mechanisms was attributed to tunneling of electron hole pairs from top contact and substrate to NC via oxide barrier.