This diploma thesis is focused on the study of electric and dielectric properties of transistors based on ionic liquids. The measurements were performed on organic electrochemical transistors with a semiconducting channel made of PEDOT:PSS, which were firstly prepared on ITO substrates, later they were printed using 3D print. Ionic liquid NO4 (1-butyl-3-methylimidazolium hydrogensulfate) was used for measuring of the properties. Electrical properties were determined by measuring volt-ampere characteristics, dielectric properties were measured by impedance spectroscopy.

L’objectif de ce mémoire de maîtrise est de caractériser une Décharge à Barrière Diélectrique (DBD) à la pression atmosphérique dans l’azote en régime homogène. L’objectif est d’une part de mettre en évidence les différents paramètres fondamentaux de ces décharges (température électronique, densité électronique, densité d’espèces excitées et métastables) mais aussi leurs évolutions spatio-temporelles. Dans ce contexte une électrode fractionnée a été réalisée afin de caractériser la décharge le long du flux de gaz et des mesures de spectroscopie d’émission optique résolues spatialement et temporellement ont été utilisées afin d’étudier la physico-chimie de ces décharges. Des variations de tension de claquage et de courant de décharge ont pu être observées entre l’entrée et la sortie du réacteur plasma. Cette variation a pu être reliée à une modification de la population de métastables d’azote N2(A) le long du flux de gaz. De plus, aucune variation significative de la température électronique n’a été relevé. Dans ce travail, des effets d’étalement de la décharge de Townsend ont été mis en évidence grâce à une méthode simple et rapide d'estimation de la surface de décharge. La décharge s’initie d’abord en sortie à cause d’une plus forte population d’espèces énergétiques par rapport à l’entrée. Les mauvaises estimations de surface de décharge conduisent à de mauvaises estimations des valeurs des capacités du circuit équivalent et donc à des paramètres électriques tels que le courant de décharge et la tension appliquée au gaz erronés. Ceci peut donner lieu à de mauvaises interprétations de la physique des DBD. La méthode proposée peut s’appliquer avec ou sans électrode fractionnée ainsi qu’en présence d’espèces réactives appropriées pour le dépôt de couches minces fonctionnelles et multifonctionnelles. / The objective of this master thesis is to characterize a Dielectric Barrier Discharge (DBD) at atmospheric pressure in nitrogen gas in a homogeneous regime. The objective is on the one hand to highlight the different fundamental parameters of these discharges (electronic temperature, electronic density, density of excited and metastable species) but also their spatio-temporal evolutions. In this context a structured electrode was made to characterize the discharge along the gas flow lines as well as optical emission spectroscopy measurements to study the physical chemistry of these discharges. Variations in breakdown voltage and discharge current could be observed between the entrance and the exit of the plasma reactor. This variation could be related to a change in the metastable population of nitrogen N2(A) along the gas flow. In addition, no significant variation in the electronic temperature was noted. In this work, spreading effects of the Townsend discharge were highlighted by a simple and quick method of estimating the discharge area. The discharge is initiated at the exit due to a larger population of energy species compared to the entrance. Wrong discharge area estimates lead to poor estimates of capacitance values of the equivalent circuit and thus to incorrect electrical parameters such as discharge current and gas voltage. This can lead to misinterpretations of DBD physics. The proposed method can be applied with or without fractional electrode, and also in the presence of reactive species suitable for thin-film deposition.

The aim of this diploma thesis is to conduct optical and photovoltaic characterization of derivatives of diketopyrrolopyrrole (DPP) as materials suitable for fabrication of bulk heterojunction organic solar cells. The charge transfer from donor material (DPP) to acceptor material (PCBM) is studied by a quenching of fluorescence. The photovoltaic response is studied by current – voltage characteristic which can tell us crucial parameters such as shor circuit current density Jsc, open circuit voltage Voc, fill factor FF and power conversion efficiency PCE. Optical characterization was carried out for symmetrical DPP derivatives (U69 and U97) which both contained diphenylaminstilbene moiety and differed in N-alkyl group. On the other hand photovoltaic characterization was conducted for analogous but asymmetrical materials (U70 and U99). Material U29 was characterized as well but its properties proved to be very poor. Both these characterizations tell us that materials with shorter solubilization groups (U69 and U99) are more suitable candidates. Achieved PCE for U70 was 0,74 % and for U99 up to 1,39 %. From these values one can say that small molecule organic materials can be used for fabrication of solar cells.

The Master´s thesis deals with issues of operational performance of two photovoltaic power plants. In the thesis is stated the history of photovoltaics, description of photovoltaic effect, used materials and production technology of the most used material in PV industry – Silicon. The basic parts and parameters of photovoltaic power plant are described. Thesis also solves, how could be done the first and periodically control due to relevant directives. The ways of diagnostics potentional failures, methods of measuring and the exam of monitoring system are stated. Practice part is focused on measuring and comparing operational performance of FVE Kurdějov and FVE Šakvice II. Operational performance was calculated from exported data for years 2014 and 2015. The thesis also contains measuring of each string connected to inventors, which are installed on the power plant. The result is an identification of strings with decreased operational performance. Based on that was created recommendations for optimalization and increase of the performance. The last part is software for simulation of photovoltaic power plant. This SW calculates potentional energy, which could be produced in a day with available data export. The calculation is defined by parameters, which are assigned.

In the present work a Metal / organic / inorganic semiconductor hybrid heterostructure (Ag / DiMe−PTCDI / GaAs) was built under UHV conditions and characterised in situ. The aim was to investigate the influence of the organic layer in the surface properties of GaAs(100) and in the electrical response of organic−modified Ag / GaAs Schottky diodes. The device was tested by combining surface−sensitive techniques (Photoemission spectroscopy and NEXAFS) with electrical measurements (current−voltage, capacitance−voltage, impedance and charge transient spectroscopies). Core level examination by PES confirms removal of native oxide layers on sulphur passivated (S−GaAs) and hydrogen plasma treated GaAs(100) (H+GaAs) surfaces. Additional deposition of ultrathin layers of DiMe−PTCDI may lead to a reduction of the surface defects density and thereby to an improvement of the electronic properties of GaAs. The energy level alignment through the heterostructure was deduced by combining UPS and I−V measurements. This allows fitting of the I−V characteristics with electron as majority carriers injected over a barrier by thermionic emission as a primary event. For thin organic layers (below 8 nm thickness) several techniques (UPS, I−V, C−V, QTS and AFM) show non homogeneous layer growth, leading to formation of voids. The coverage of the H+GaAs substrate as a function of the nominal thickness of DiMe−PTCDI was assessed via C−V measurements assuming a voltage independent capacitance of the organic layer. The frequency response of the device was evaluated through C−V and impedance measurements in the range 1 kHz−1 MHz. The almost independent behaviour of the capacitance in the measured frequency range confirmed the assumption of a near geometrical capacitor, which was used for modelling the impedance with an equivalent circuit of seven components. From there it was found a predominance of the space charge region impedance, so that A.C. conduction can only takes place through the parallel conductance, with a significant contribution of the back contact. Additionally a non linear behaviour of the organic layer resistance probably due to the presence of traps was deduced. ( ) ω ' R QTS measurements performed on the heterostructure showed the presence of two relaxations induced by deposition of the organic layer. The first one is attributed to the presence of a deep trap probably located at the metal / organic interface, while the second one has very small activation energy ( ~ 20 meV) which are probably due to disorder at the organic film. Those processes with small activation energies proved to be determinant for fitting the I−V characteristics of DiMe−PTCDI organic modified diodes using the expressions of a trapped charge limited current regime TCLC. Such a model was the best analytical approach found for fitting the I−V response. Further improving probably will involve implementation of numerical calculations or additional considerations in the physics of the device.

Синтезированы мемристорные сэндвич-структуры Zr/ZrO2-nt/Au диаметром 140 мкм на основе нанотубулярного слоя диоксида циркония толщиной 1.7 мкм и внутренним диаметром нанотрубок 55 нм. Проведена аттестация образцов методами сканирующей электронной и конфокальной микроскопии. Исследованы вольт-амперные характеристики полученных устройств в статическом и импульсном режимах резистивного переключения. Определены параметры резистивного переключения. Установлены механизмы проводимости, доминирующие в различных состояниях структуры. Продемонстрирована возможность формирования квантовых филаментов, состоящих из кислородных вакансий, в оксидном слое. Показана перспективность применения данных структур в качестве мемристорных элементов памяти. / Memristor Zr/ZrO2-nt/Au structure based on the zirconium oxide nanotubular layer with the thickness of 1.7 μm and the nanotubes inner diameter of 55 nm was synthesized. Attestation of the samples was performed with the methods of scanning electron and confocal microscopy. Current-voltage curves of the fabricated devices in static and pulsed modes of resistance switching were studied. Conduction mechanisms that dominate in different structure states were established. The formation of quantum filaments which consist of oxygen vacancies was shown to be possible in the oxide layer. The perspective of using these structures as memristor memory elements was shown.

Les cannabinoïdes sont une large classe de molécules qui agissent principalement sur les neurones, affectant la sensation de douleur, l'appétit, l'humeur, l'apprentissage et la mémoire. Des récepteurs cannabinoïdes spécifiques (CBR) ont été identifiés dans les neurones et d'autres types de cellules. Cependant, l'activation des CBR ne peut pas modifier directement l'excitabilité électrique des neurones, car les CBR ne génèrent pas de signaux électriques par eux-mêmes. Au lieu de cela, le potentiel membranaire et la signalisation électrique dans toutes les cellules excitables, y compris les neurones, sont générés par des canaux ioniques intégrés dans la membrane cellulaire. Récemment, il a été démontré que le cannabinoïde synthétique WIN55,212-2 affecte la mémoire en activant les récepteurs CB1, entraînant des changements de signalisation qui affectent le courant Ih généré par les canaux cycliques (HCN) activés par l'hyperpolarisation. Cependant, il a également été démontré que les cannabinoïdes régulent directement la fonction de plusieurs canaux ioniques, indépendamment de l'activation du CBR. Nous examinons ici si les cannabinoïdes, le 9-tétrahydrocannabidiol (THC) et le cannabidiol (CBD), que l'on trouve dans le cannabis sativa, peuvent réguler directement les canaux HCN1. En utilisant une pince de tension à deux électrodes (TEVC), sur des ovocytes de Xenopus, qui n'expriment pas de CBR, nous surveillons les changements dans la relation courant-tension, la cinétique de déclenchement et la dépendance à la tension des courants HCN1 dans des concentrations croissantes de cannabinoïdes. Nos données suggèrent que le CBD et le THC modulent directement le courant de HCN1. Étant donné que les cannabinoïdes sont des molécules thérapeutiques prometteuses pour le traitement de plusieurs troubles neurologiques, comprendre quelles cibles ils affectent, le mécanisme de leur régulation et comment ils se lient à des cibles potentielles sont des étapes essentielles de leur utilisation en tant que thérapies efficaces et du développement de cibles plus puissantes et plus efficaces médicaments spécifiques. / Cannabinoids are a broad class of molecules that act primarily on neurons, affecting pain sensation, appetite, mood, learning and memory. Specific cannabinoid receptors (CBRs) have been identified in neurons, and other cell types. However, activating CBRs cannot directly alter electrical excitability in neurons, since CBRs do not generate electrical signals on their own. Instead, membrane potential and electrical signaling in all excitable cells, including neurons, are generated by ion channels embedded in the cell membrane. Recently, it has been shown that the synthetic cannabinoid WIN55,212-2 effects memory by activating CB1 receptors, leading to signaling changes that affect the Ih current generated by hyperpolarization-activated cyclic-nucleotide gated (HCN) channels. However, cannabinoids have also been shown to directly regulate the function of several ion channels, independently of CBR activation. Here we examine whether cannabinoids, 9-tetrahydrocannabidiol (THC) and cannabidiol (CBD), which are found in cannabis sativa, can directly regulate HCN1 channels. Using two-electrode voltage clamp (TEVC), on Xenopus oocytes, which do not express CBRs, we monitor changes in the current-voltage relationship, gating kinetics, and voltage-dependence of HCN1 currents in increasing concentrations of cannabinoids. Our data suggests CBD and THC directly modulate HCN1 current. Since cannabinoids are promising therapeutic molecules for the treatment of several neurological disorders, understanding what targets they affect, the mechanism of their regulation, and how they bind to potential targets are critical steps in their use as effective therapies and the development of more potent and target specific drugs.

Durant ces dernières années, l’apparition de nouvelles architectures (FDSOI, FinFETs ou NW-FETs) et l’utilisation de nouveaux matériaux (notamment SiGe) ont permis de repousser les limites des performances des dispositifs MOS et de contourner l’effet canal court inhérent à la miniaturisation des composants. Cependant, pour toutes ces nouvelles architectures, la résistance de contact se dégrade au fil des nœuds technologiques. Celle-ci dépend fortement de deux paramètres physiques : la concentration de dopants actifs proches de la surface du semi-conducteur et de la hauteur de barrière Schottky du contact siliciuré. De multiples procédés avancés ont été proposé pour améliorer ces deux paramètres physiques (pré-amorphisation, recuit laser, ségrégation de dopants, etc…). Afin d’optimiser les conditions expérimentales de ces nouvelles techniques de fabrication, il est primordial de pouvoir caractériser avec fiabilité leur impact sur les deux grandeurs physiques citées. Dans le cadre de cette thèse, deux thématiques dédiées à l’étude de chacun des paramètres sont abordées, explicitant les méthodes de caractérisation développées ainsi que des exemples concrets d’applications. La première partie concerne l’étude de la concentration de dopants actifs proches de la surface du semi-conducteur. Dans cet axe, nous avons mis en place une méthode d’Effet Hall Différentiel (DHE). Cette technique combine gravures successives et mesures par effet Hall conventionnel afin d’obtenir le profil de concentration de dopants actifs en fonction de la profondeur. Nous avons développé et validé une méthode de gravure chimique et de mesure électrique pour des couches ultra-minces de SiGe et de Si dopées. Les profils de concentration générés ont une résolution en profondeur inférieure à 1 nm et ont permis d’étudier de façon approfondie dans les premiers nanomètres proches de la surface de couches fabriquées grâce à des techniques d’implantation et de recuit avancées comme par exemple, la croissance en phase solide activée par recuit laser. La deuxième partie porte sur la mesure de hauteurs de barrière Schottky pour des contacts siliciurés. Durant cette étude, nous avons transféré une technique se basant sur des diodes en tête bêche pour caractériser l’impact de la ségrégation de différentes espèces à l’interface siliciure/semi-conducteur sur la hauteur de barrière Schottky d’un contact en siliciure de platine. Cette méthode de mesure associée à des simulations physiques a permis d’une part, d’extrairer avec fiabilité des hauteurs de barrières avec une précision de 10meV et d’autre part, d’effectuer une sélection des meilleures conditions de ségrégation de dopants pour la réduction de la hauteur de barrière Schottky. Pour conclure, ce projet a rendu possible le développement de méthodes de caractérisation pour l’étude de matériaux utilisés en nanoélectronique. De plus, nous avons pu apporter des éclaircissements concernant l’impact de techniques d’implantation ionique alternatives sur des couches de Si et SiGe ultrafines, et ce, dans le but de réduire la résistance de contact entre siliciure et semi-conducteur dans le module source-drain de transistors ultimes. / During the past few decades, the emergence of new architectures (FDSOI, FinFETs or NW-FETs) and the use of new materials (like silicon/germanium alloys) allowed to go further in MOS devices scaling by solving short channel effect issues. However, new architectures suffer from contact resistance degradation with size reduction. This resistance strongly depends on two parameters: the active dopant concentration close to the semi-conductor surface and the Schottky barrier height of the silicide contact. Many solutions have been proposed to improve both of these physical parameters: pre-amorphisation, laser annealing, dopant segregation and others. In order to optimize the experimental conditions of these fabrication techniques, it is mandatory to measure precisely and reliably their impact on cited parameters.Within the scope of this thesis, two parts are dedicated to each lever of the contact resistance, each time precising the developed characterization method and concrete application studies. The first part concerns the study of the active dopant concentration close to the semi-conductor surface. In this axis, we developed a Differential Hall Effet method (DHE) which can provide accurate depth profiles of active dopant concentration combining successive etching processes and conventional Hall Effect measurements. To do so, we validated layer chemical etching and precise electrical characterization method for doped Si and SiGe. Obtained generated profiles have a sub-1nm resolution and allowed to scan the first few nanometers of layers fabricated by advanced ion implantation and annealing techniques, like solid-phase epitaxy regrowth activated by laser annealing. In the second part, we focused on the measurement of Schottky barrier height of platinum silicide contact. We transferred a characterization method based on back-to-back diodes structure to measure platinum silicide contacts with different dopant segregation conditions. The electrical measurements were then fitted with physical models to extract Schottky barrier height with a precision of about 10meV. This combination between measurements and simulations allowed to point out the best ion implantation and annealing conditions for Schottky barrier height reduction.To conclude, thanks to this project, we developed highly sensitive characterization methods for nanoelectronics application. Moreover, we brought several clarifications on the impact of alternative ion implantation and annealing processes on Si and SiGe ultra-thin layers in the perspective of contact resistance reduction in FDSOI source-drain module.

Diese Arbeit gibt einen tiefgehenden Einblick in verschiedene Aspekte von auf (In,Ga)N/GaN Heterostrukturen basierenden Leuchtdioden (LEDs), mittels Molekularstrahlepitaxie entlang der Achse von Nanodrähten (NWs) auf Si Substraten gewachsen. Insbesondere wurden die Wachstumsparameter angepasst, um eine Koaleszierung der Nanodrähte zu vermindern. Auf diese Weise konnte die durch die NW-LEDs emittierte Intensität der Photolumineszenz (PL) um einen Faktor zehn erhöht werden. Die opto-elektronischen Eigenschaften von NW-LEDs konnten durch die Verwendung von Indiumzinoxid, anstatt von Ni/Au als Frontkontakt, verbessert werden. Zudem wurde demonstriert, dass auch selektives Wachstum (SAG) von GaN NWs auf AlN gepufferten Si Substraten mit einer guten Leistungsfähigkeit von Geräte vereinbar ist und somit als Wegbereiter für eine neue Generation von NW-LEDs auf Si dienen kann. Weiterhin war es möglich, strukturierte Felder von ultradünnen NWs durch SAG und thermische in situ Dekomposition herzustellen. In den durch die NW-LEDs emittierten Elektrolumineszenzspektren (EL) wurde eine Doppellinenstruktur beobachtet, die höchstwahrscheinlich von den kompressiven Verspannungen im benachbarten Quantentopf, durch die Elektronensperrschicht verursachten, herrührt. Die Analyse von temperaturabhängigen PL- und EL-Messungen zeigt, dass Ladungsträgerlokalisierungen nicht ausschlaggebend für die EL-Emission von NW-LEDs sind. Die Strom-Spannungs-Charakteristiken (I-V) von NW-LEDs unter Vorwärtsspannung wurden mittels eines Modells beschrieben, in das die vielkomponentige Natur der LEDs berücksichtigt wird. Die unter Rückwärtsspannung aktiven Transportmechanismen wurden anhand von Kapazitätstransientenmessungen und temperaturabhänigigen I-V-Messungen untersucht. Dann wurde ein physikalisches Modell zur quantitativen Beschreibung der besonderen I-V-T Charakteristik der untersuchten NW-LEDs entwickelt. / This PhD thesis provides an in-depth insight on various crucial aspects of light-emitting diodes (LEDs) based on (In,Ga)N/GaN heterostructures grown along the axis of nanowires (NWs) by molecular beam epitaxy on Si substrates. In particular, the growth parameters are adjusted so as to suppress the coalescence of NWs; in this way the photoluminescence (PL) intensity emitted from the NW-LEDs can be increased by about ten times. The opto-electronic properties of the NW-LEDs can be further improved by exclusively employing indium tin oxide instead of Ni/Au as top contact. Furthermore, the compatibility of selective-area growth (SAG) of GaN NWs on AlN-buffered Si substrates with device operation is demonstrated, thus paving the way for a new generation of LEDs based on homogeneous NW ensembles on Si. Ordered arrays of ultrathin NWs are also successfully obtained by combining SAG and in situ post-growth thermal decomposition. A double-line structure is observed in the electroluminescence (EL) spectra emitted by the NW-LEDs; it is likely caused by compressive strain introduced by the (Al,Ga)N electron blocking layer in the neighbouring (In,Ga)N quantum well. An in-depth analysis of temperature dependent PL and EL measurements indicates that carrier localization phenomena do not dominate the EL emission properties of the NW-LEDs. The forward bias current-voltage (I-V) characteristics of different NW-LEDs are analysed by means of an original model that takes into account the multi-element nature of LEDs based on NW ensembles by assuming a linear dependence of the ideality factor on applied bias. The transport mechanisms in reverse bias regime are carefully studied by means of deep level transient spectroscopy (DLTS) and temperature dependent I-V measurements. The physical origin of the detected deep states is discussed. Then, a physical model able to describe quantitatively the peculiar I-V-T characteristics of NW-LEDs is developed.

The work presented in this thesis consists of two distinct parts. The first years of my work focused on the development and improvement of a new equipment built to study magnetic and electrical properties, particularly applying microwaves in reflection and transmission conditions. The sample space in conventional cryostats with superconducting magnets is usually smaller than 10-mm-diameter. Our equipment consists of a hollow cylindrical cryostat having a 33-mm-diameter hole all along its vertical axis. These characteristics enable the measurement of large samples and the use of big resonant cavities to get to a wider microwave (MW) range, particularly in transmission measurements. The cryostat has a superconducting magnet made of a solenoid that applies a magnetic field from -5 T to 5 T, and a temperature controller that works in the range 1.8 - 300 K. The system is cooled down with nitrogen and helium and the temperature can be controlled with the precision required by each experiment using a heater and a needle valve. Different probes for a wide range of experiments in our cryostat have been developed in order to be as versatile as possible. Following this idea each one has been divided in two halves that can be combined as it is preferred in each experiment. Each probe is made of a 8-to-10-mm-diameter stainless steel tube that is used to protect and give some stiffness to the measuring device. A coaxial cable and different waveguides are added to these stainless steel jackets, so we end up having nine halves, four upper parts that can be combined with five lower parts. There are three waveguides working in the frequency ranges 33-50 GHz (WR22), 50-75 GHz (WR15) and 75-110 GHz (WR10), and a coaxial cable that maintains the fundamental mode at a frequency of 60 GHz. In the extra lower part a 16-pin Fischer connector is added at the bottom in order to be able to perform more resistance experiments. Once the probes have been built, they have been tested to make sure the system is able to reach high vacuum and to be cooled down. Problems found along the way have been solved and at the end all the probes work properly. Different sample holders have been designed and built according to the needs in each experiment. The system has been tested by reproducing experimental results with Mn12-acetate, as quantum tunneling and magnetic avalanches, and by obtaining new results on microwave transmission in thin TiN films. The second part of the thesis focuses on the measurements of thin TiN films in a dilution refrigerator working with a mixture of 3He and 4He that enables experiments at a few tens of millikelvins. The cryostat also contains a superconductor magnet which can apply a magnetic field up to 5 T. Low-temperature transport properties of nanoperforated superconducting TiN films have been experimentally studied. Resistance measurements have been performed in the critical region of the superconductor-insulator transition (SIT), applying the magnetic field perpendicular to the plane of the structure or the dc current through the sample. SIT is a transition from a superconductor to an insulator state by localizing the Cooper pairs. The evolution of the SIT with temperature, magnetic field and dc current has been investigated in detail. Characteristic parameters have been determined for as-cast thin films using the theory of quantum corrections to conductivity. Disorder-driven and field-induced SITs have been measured. Commensurability effects have been observed down to the lowest experimental temperature, and are emphasized in the more disordered samples. The SIT has been observed for a dc current applied across the sample as changes in the curvature at zero bias current. Experiments prove that electronic transport in the nanoperforated samples is mediated by Andreev conversion. Finally, the existence of the superinsulator state has been experimentally proved. / El treball que es presenta en aquesta tesi consta de dues parts ben diferenciades. La primera pretén el desenvolupament d’un equip experimental concebut per a l’estudi de propietats magnètiques i elèctriques en materials diversos i, en especial, el treball amb radiació de microones en condicions de reflexió i transmissió. La segona s’ha centrat en les mesures de transport d’una capa fina superconductora de nitrur de titani (TiN) de 5 nm de gruix en un criòstat de dilució.