No description available.

This report describes an experimental study of the conduction and absorption mechanisms of Germanium in the temperature range 4.2 - 1.5 K. The results of these studies were mainly devoted to the developments of very far infrared detectors. Germanium (Ge) is a well-known semiconductor element used widely, when doped with small concentration of impurities, for detection of far infrared wavelengths up to 100~m. For doping concentrations less 16 3 than 1.0 x 10 atoms/em, the absorption of radiation in the range 100- 1000~m is very weak Because of the lack of the proper absorption mechanisms, except for some photo-hopping absorption in compensated samples around 1000llm.16 -3 In the range of doping between 1-8 x 10 cm ,there exists additional thermal activation energy not present in the lower concentrations. It was thought that this activation energy results from impurity interactions in this doping range, and hence a delocalized energy band is thus formed above the ground state level. However, the electrical conduction, the width of this band and its position, and the relevance of this band to the marked bolometric effect for 10o-lOOOWU wavelength detections are not yet clear. This thesis presents further study on this band together with its relation to the conduction and absorption mechanisms. Comparative studies were usually made for two samples of Ge differing in doping configuration, one of which does not have this additional activation energy (low concentration) . The firs two chapters give a review of the absorption and conduction mechanisms in Ge at low temperatures, and the performance relations and measurements for different types of infrared detectors. In this report, the conduction mechanism is studied for the two samples, and includes galvanometric properties, thermal properties and energy scattering processes for the carriers in the delocalized band. The absorption characteristics, 1n lOO-lOOO~ru range of the two samples were investigated. Germanium elements with absorbing surfaces are also studied using two different techniques, namely, surface ion implantation and metal film deposition. The mutual effects of the implanted surface and the bulk material are discussed and suggestions for the future of this technique are given. Finally, the design and performance of the constructed high sensitivity far infrared Ge detectors using the higher concentration sample are given. Theoretical noise limitations were reached in these detectors. Heasurements and practicaI. astronomical applications are also given.

Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the first time in solution-deposited zinc-tin-oxide (ZTO). The impact of the compliance current on device operation, including the SET and RESET voltages, pre-SET, RESET and post-RESET currents, the resistance ratio between the low and high resistance states, retention, and the endurance, is investigated for an isolated Al dot/ZTO/Ir blanket device and for Al/ZTO/Pt crossbar RRAM devices. A gradual forming process is devised to improve device stability and performance. It is found that the device performance depends critically on the compliance current density that is used to limit the breakdown conduction during the SET operation. In addition, it was found that the conduction and switching mechanisms are consistent with the filament model of formation and rupture of conductive filaments. / Graduation date: 2012

The structure and the energy band gap of hydrogenated amorphous silicon carbide are theoretically revised. In the light of defect pool model, density of states distribution is investigated for various regions of mobility gap. The films are deposited by plasma enhanced chemical vapor deposition system with various gas concentrations at two different, lower (30 mW/cm2) and higher (90 mW/cm2), radio frequency power densities. The elemental composition of hydrogenated amorphous silicon carbide films and relative composition of existing bond types are analyzed by x-ray photoelectron spectroscopy measurements. The thicknesses, deposition rates, refractive indices and optical band gaps of the films are determined by ultraviolet visible transmittance measurements. Uniformity of the deposited films is analyzed along the radial direction of the bottom electrode of the plasma enhanced chemical vapor deposition reactor. The molecular vibration characteristics of the films are reviewed and analyzed by Fourier transform infrared spectroscopy measurements. Electrical characteristics of the films are analyzed by dc conductivity measurements. Conduction mechanisms, such as extended state, nearest neighbor and variable range hopping in tail states are revised. The hopping conductivities are analyzed by considering the density of states distribution in various regions of mobility gap. The experimentally measured activation energies for the films of high carbon content are too low to be interpreted as the difference between Fermi level and relevant band edge. This anomaly has been successfully removed by introducing hopping conduction across localized tail states of the relevant band. In other words, the second contribution lowers the mobility edge towards the Fermi level.

Made available in DSpace on 2016-06-02T20:15:32Z (GMT). No. of bitstreams: 1 5887.pdf: 17427536 bytes, checksum: 86a72410b26eb5474b5d0a693e193449 (MD5) Previous issue date: 2013-12-19 / Financiadora de Estudos e Projetos / Multiferroic are materials which have at least two of the three ferroics orders: ferromagnetism, ferroelectricity and/or ferroelasticity. The coupling between these properties, make multiferroic materials of great technological and scientific interest, mainly in the design of new devices such as sensors and spintronic devices. The lead iron tungstate Pb(Fe2=3W1=3)O3 (PFW) is a relaxor multiferroic with ferroelectric transition TC ~ 180K and antiferromagnetic TN ~ 340K, it is a member of the relaxor ferroelectrics family with perovskite structure, in which the two types of cations (Fe3+ e W6+) are randomly distributed in the B site, causing the formation of polar nanoregions (or clusters) of order/disorder at microscopic scale, which would be the origin of the relaxor behavior. Lead iron niobate Pb(Fe1=2Nb1=2)O3 (PFN) is a ferroelectric with diffuse phase transition (DPT) around TC ~ 380K and antiferromagnetic, with the G-type ordering below the Néel temperature, reported in TN ~ 143K. This material has a high dielectric constant, and excellent ferroelectric properties. The Pb2+, at site A, and Nb5+, at site B are responsible for the ferroelectric order, as the Fe3+ at site B is responsible to provide the necessary magnetic moment for the magnetic ordering. In this work, the electrical conduction and relaxation mechanism of multiferroics PFW and PFN ceramics were investigated. The PFW and PFN samples were prepared by solid state reaction method through two stages. This method was effective to obtain samples with majoritary perovskite phase (95,6% and 95,7%), respectively. After the densification process through sintering methods used in this work (conventional sintering, hot pressing and spark plasma), the perovskite phase was increased, being almost 100 %. The samples of PFW and PFN obtained by the different densification techniques, were dense and practically free of pores. For the analysis of the dielectric response of the samples, it was proposed in this work, an analysis protocol, which was effective to find the responsible mechanisms for the dielectric response of the studied materials. Two relaxation processes were identified for each studied sample, which were labeled as: PR-1, PR-2 or PR *. These processes can be attributed to the interfacial polarization and polarization by hopping, occurring due to the presence of defects in the lattice, such as the oxygen vacancies and lead vacancies. From the dependence of the DC electrical conductivity versus temperature, it was possible to identify regions with different mechanisms of electrical conduction for the samples of PFW and PFN. These mechanisms are, thermally activated at high temperatures, hopping of small polarons at intermediate temperatures and variable range hopping at low temperatures. / Multiferróicos são materiais que têm pelo menos duas das três ordens ferróicas: ferromagnetismo, ferroeletricidade e/ou ferroelasticidade. O acoplamento entre essas propriedades, faz com que os materiais multiferróicos despertem um grande interesse científico e tecnológico, principalmente na concepção de novos dispositivos, como sensores e dispositivos de spintrônica. O tungstanato de ferro e chumbo Pb(Fe2=3W1=3)O3 (PFW) é um multiferróico relaxor com transição ferroelétrica TC ~ 180K e antiferromagnética TN ~ 340K, ele é membro da família dos ferroelétricos relaxores com uma estrutura perovskita, em que os dois tipos de cátions (Fe3+ e W6+) são aleatoriamente distribuídos no sítio B, fazendo com que em escala microscópica existam nanoregiões polares (ou clusters) de ordem/desordem neste sítio, que seriam a origem do comportamento relaxor. O niobato de ferro e chumbo Pb(Fe1=2Nb1=2)O3 (PFN) é um ferroelétrico com transição de fase difusa (TFD) ao redor de TC ~ 380K, e antiferromagnético, com ordenamento do tipo-G abaixo da temperatura de Néel reportada em TN ~ 143K. Ele ainda apresenta uma alta constante dielétrica, além de excelentes propriedades ferroelétricas. Neste material o Pb2+, no sítio A, e Nb5+, no sítio B são responsáveis pelo ordenamento ferroelétrico, enquanto o Fe3+ no sítio B é responsável em fornecer o momento magnético necessário para o ordenamento magnético. Neste trabalho, os mecanismos de condução e relaxação elétrica das cerâmicas multiferróicas de PFW e PFN foram investigados. As amostras de PFW e PFN foram preparadas por reação de estado sólido através do método de dois estágios, que se mostrou eficaz na obtenção de amostras com fase perovskita majoritaria (95,6% e 95,7%), respectivamente. De modo geral, essas amostras ao passar pelo processo de densificação através dos métodos de sinterização utilizados nesse trabalho (sinterização convencional, sinterização por prensagem uniaxial a quente e sinterização por spark plasma), tiveram suas fases perovskitas majoritarias aumentadas, chegando à praticamente 100%. As amostras de PFW e PFN, obtidas pelas diferentes técnicas de densificação, mostraram-se densas e praticamente livres de poros. Para análise da resposta dielétrica apresentada por essas amostras, foi proposto neste trabalho um protocolo de análise, que se mostrou eficaz em descrever o comportamento da resposta dielétrica apresentado pelas mesmas. Foram identificados dois processos de relaxação para cada amostra em estudo, os quais foram identificados por: PR-1, PR-2 ou PR*. Esses processos podem ser atribuídos à polarização interfacial e à polarização por salto, os quais ocorrem pela presença de defeitos na rede, tais como, as vacâncias de oxigênio e as vacâncias de chumbo. Através da dependência da condutividade elétrica DC em função da temperatura, foi possível identificar regiões com diferentes mecanismos de condução para as amostras de PFW e PFN. Dentre eles estão, ativação térmica em altas temperaturas, hopping de pequenos polarons em temperaturas intermediárias e hopping de alcance variável em baixas temperaturas.

Ternary chalcopyrite compounds are the semiconductors with suitable properties to be used as absorber materials in thin film solar cells. AgInSe2 is a promising candidate with its several advantages over the widely used CuInSe2. The purpose of this study was to optimize the physical properties of the Ag-In-Se (AIS) thin films that were deposited by e-beam evaporation of Ag3In5Se9 single crystal powder for solar cell applications by means of post-annealing process under nitrogen atmosphere. The as-grown AIS thin films were annealed at 200, 300 and 400oC and their structural, optical, electrical and photoelectrical properties were examined to observe the effects of post-annealing process. Structural characterization of the films was performed by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses. Optical properties of the films were investigated by optical transmittance measurements. Electrical and photoelectrical properties of the films were examined by temperature dependent conductivity, photoconductivity under different illumination intensities and spectral photoresponse measurements. It was discovered that the annealing of AIS thin films at 200oC resulted in the best physical properties for solar cell applications. The obtained films were polycrystalline with mixed binary and ternary crystalline phases, such as Ag3In5Se9, AgInSe2 and InSe, and showed n-type conductivity with room temperature conductivity value of 2.3x10-6 (Ohm&shy / cm)-1. The band gap energy of the 200oC-annealed films was determined as 1.68 eV from spectral photoresponse measurements. The results of the study revealed that the inadequate Ag incorporation and segregation and/or reevaporation of Se atoms at high annealing temperatures were the major problems encountered in producing single phase polycrystalline AgInSe2 thin films. The required stoichiometry of thin films should be maintained during the growth of the films by means of an alternative deposition procedure and the films should be selenized during post-annealing process.

Ces travaux de thèse ont porté sur l’élaboration d’électrodes déformables pour la récupération d’énergie houlomotrice. En effet, la conversion de l’énergie mécanique des vagues en électricité est possible via un système entièrement souple et basé sur la technologie des polymères électroactifs (ou EAP). Ces matériaux ont la capacité de se déformer sous stimuli électrique, d’où la nécessité de développer des matériaux conducteurs déformables. Le matériau EAP choisi pour l’étude est un élastomère silicone. La formulation de composites à matrice élastomère silicone chargée en particules conductrices carbonées (graphite, nanofeuillets de graphite et nanotubes de carbone) est ainsi la piste suivie pour composer des électrodes déformables. Deux méthodes de mélange, en voie fondu, ont été explorées. La première utilise un mélangeur planétaire, et la seconde utilise en plus un mélangeur tri-cylindre. L’influence sur les propriétés électriques des composites, de la méthode de mélange, de la nature de la charge conductrice ainsi du taux de charges, a été analysée. Aussi, l’étude de la percolation électrique ainsi que l’étude des mécanismes de conduction mis en jeux dans les différents composites ont été réalisées, et complétées par l’observation de la morphologie en microscopie optique et en microscopie électronique. Le comportement mécanique des composites en traction a également été analysé. Enfin, les propriétés couplées électro-mécaniques des composites les plus prometteurs ont été testées. Les mesures permettent de proposer une formulation à base de nanotubes de carbone comme électrode déformable. / This PhD work presents the development of stretchable electrodes for wave energy harvesting. Indeed, it is possible to convert the mechanical energy of the waves into electricity thanks to a flexible system based on electroactive polymer (EAP) technology. As EAPs have the ability to deform under electrical stimuli, deformable conductive materials are needed. In this study, the chosen EAP is a silicone elastomer. Composites formulated with silicone elastomer matrix filled with carbonaceous conductive particles (graphite, graphite nanoplatelets and carbon nanotubes) were thus developed. Two mixing methods, by melt compounding, have been explored. The first uses a planetary mixer, and the second uses a three roll-mill. The influence of the mixing method, the nature of the fillers and the filler rate on the electrical properties of the composites has been analyzed. The morphology, as well as the percolation and the conduction mechanisms have been studied. The tensile properties of the composites were also analyzed. Finally, the electromechanical coupled properties of the most promising composites were tested, allowing us to propose a formulation as a stretchable electrode.

Cette thèse porte sur l’intégration de condensateurs accordables à base de BaxSr1-xTiO3 (BST), pour réaliser des dispositifs radiofréquences reconfigurables destinés aux antennes de téléphones portables. L’enjeu industriel principal est d’obtenir des condensateurs avec une forte accordabilité, de faibles pertes diélectriques et de faibles courants de fuite, en jouant sur la composition chimique du matériau et en contrôlant la chimie des défauts liés aux lacunes d’oxygène. La stratégie adoptée dans cette étude pour atteindre cet objectif est de doper le BST par du Mn en substitution du Ti et par du Cu en addition. Une étude complète de ces deux cas de dopage simple, réalisée à la fois sur des céramiques et des couches minces synthétisées à partir des mêmes solutions sol-gel, a dévoilé des mécanismes différents d’amélioration des propriétés diélectriques et électriques du matériau suivant le type de dopage. La complémentarité de ces deux dopants nous a alors conduit à explorer le codopage du BST en couche mince. Une architecture originale de codopage hétérogène a été mise en place, permettant de combiner les avantages des deux voies de dopage et de s’approcher fortement des spécifications imposées par le cahier des charges industriel. / This PhD work is about integration of BaxSr1-xTiO3 (BST) based tunable capacitors, in order to perform radiofrequency reconfigurable devices for cell phone antennas. The main industrial goal is to obtain capacitors with a high tunability, low dielectric losses and low leakage currents, by playing on the chemical composition of the material and by controlling the oxygen vacancy related defect chemistry. The strategy addressed in this study to reach this objective is doping the BST by Mn in substitution of Ti or by adding Cu. A full study of each case of doping, performed on both ceramics and thin films synthesized from the same sol-gel solutions, revealed different improvement mechanisms of the dielectric and electrical properties of the material according to the type of doping. The complementarity of the two doping ways has led us to investigate codoping of BST thin films. An original architecture of heterogeneous codoping has been set up, allowing to combine the benefits of each doping way and to closely meet the industrial specifications.

Синтезированы мемристорные сэндвич-структуры Zr/ZrO2-nt/Au диаметром 140 мкм на основе нанотубулярного слоя диоксида циркония толщиной 1.7 мкм и внутренним диаметром нанотрубок 55 нм. Проведена аттестация образцов методами сканирующей электронной и конфокальной микроскопии. Исследованы вольт-амперные характеристики полученных устройств в статическом и импульсном режимах резистивного переключения. Определены параметры резистивного переключения. Установлены механизмы проводимости, доминирующие в различных состояниях структуры. Продемонстрирована возможность формирования квантовых филаментов, состоящих из кислородных вакансий, в оксидном слое. Показана перспективность применения данных структур в качестве мемристорных элементов памяти. / Memristor Zr/ZrO2-nt/Au structure based on the zirconium oxide nanotubular layer with the thickness of 1.7 μm and the nanotubes inner diameter of 55 nm was synthesized. Attestation of the samples was performed with the methods of scanning electron and confocal microscopy. Current-voltage curves of the fabricated devices in static and pulsed modes of resistance switching were studied. Conduction mechanisms that dominate in different structure states were established. The formation of quantum filaments which consist of oxygen vacancies was shown to be possible in the oxide layer. The perspective of using these structures as memristor memory elements was shown.

L’amélioration des systèmes électroniques pour le déploiement de l'avion tout électrique dépend de la capacité des composants passifs, tels que les condensateurs, à réduire leur volume, leur masse et leur coût, et augmenter leurs performances et leur fiabilité, particulièrement dans l’environnement aéronautique. Dans ce contexte, cette thèse a eu pour objectif l’étude et le développement de nouvelles technologies de condensateurs pour des applications avioniques. Dans la première partie des travaux, nous abordons l’évaluation de condensateurs céramique de puissance. La technologie céramique constitue, en effet, l’une des rares solutions matures capables de répondre aux exigences des équipementiers. La caractérisation, l’analyse des mécanismes de défaillance, de leurs effets et de leur criticité (AMDEC) ainsi que l’étude de fiabilité et de robustesse de composants commerciaux présentant des architectures originales (condensateurs multi-chips) ont été réalisées. Ces résultats ont été complétés par une étude plus amont sur la caractérisation de céramiques frittées par frittage flash (SPS). Les permittivités colossales de ces matériaux permettraient d’accroitre la fiabilité et la miniaturisation des condensateurs tout en conservant de fortes valeurs de capacité et de tension nominale. La seconde partie, plus fondamentale, a été consacrée au développement de nanoparticules céramique/polymère coeur-écorce pour des applications de condensateurs enterrés, opérant aux radiofréquences. La synthèse et les caractérisations physico-chimiques des nanocomposites ainsi que les procédés de fabrication de condensateurs en couches épaisses sont, en premier lieu, décrits. Une méthode de caractérisation électrique large bande a été mise au point pour permettre l’analyse des propriétés diélectriques et des mécanismes de conduction des nanoparticules. Les performances des dispositifs ont été recherchées en fonction de la température et des procédés de mise en forme. En outre, la durabilité en température de ces derniers a été évaluée. / The improvement of electronic systems for the deployment of all-electric aircrafts depends on the ability of passive components, such as capacitors, to reduce their volume, weight and cost, and to increase their performance and reliability, particularly in the aeronautical environment. In this context, the objective of this thesis was to study and develop novel capacitor technologies for avionics. In the first part of this work, the evaluation of power ceramic capacitors has been discussed. Indeed, the ceramic technology appeared to be one of the few mature solutions meeting the requirements of OEMs. The characterization, the failure mode, effects and criticality analysis (FMECA) and reliability and robustness assessment of commercial components using original architectures (multi-chip capacitors) have been performed. These results have been completed by a more advanced study on the characterization of new ceramics sintered by spark plasma sintering (SPS). The colossal permittivity of these materials could allow to increase reliability and miniaturization of capacitors while maintaining high values of capacitance and voltage rating. The second part, more fundamental, is devoted to the development of core-shell ceramic/polymer nanoparticles for embedded capacitors operating at radiofrequencies. The synthesis and the physicochemical characterization of the nanocomposites as well as the manufacturing processes of the thick film capacitors are first described. A new broadband electrical characterization methodology has been developed to analyze the dielectric properties and the conduction mechanisms of the nanoparticles. The effects of the temperature and the manufacturing process on the device performance have been investigated. In addition, the durability was evaluated.