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Rede de Bragg aplicada na monitoração da deformação mecânica de verniz acrílico durante a secagemOliveira, Fernanda Mantuan Dala Rosa de 15 February 2013 (has links)
CAPES, CNPq, Fundação Araucária / O presente trabalho mostra um estudo sobre a aplicação de um sensor ótico baseado em rede de Bragg em fibra (FBG) para monitorar o processo de secagem de polímeros. Testes realizados com verniz acrílico demonstraram que redes de Bragg podem ser utilizadas como sensores de deformação na análise de secagem de um filme polimérico sem a necessidade de encapsulação especial do sensor. O processo de secagem de um filme de verniz foi monitorado ao longo de 24 horas por duas redes de Bragg, uma atuando como sensor de deformação mecânica, e outra como sensor de temperatura. A perda de massa do filme também foi acompanhada ao longo do tempo. Os resultados obtidos permitem avaliar as deformações mecânicas e identificar três estágios do processo de secagem: evaporação da água e concentração dos sólidos, contato irreversível das partículas e processo de coalescência e, por fim, formação de um filme contínuo. / This work shows the application of an optical sensor based on fiber Bragg grating (FBG) to monitor the drying process of polymers. Tests carried out with acrylic varnish showed that a fiber Bragg grating can be used as a sensor to analyze the deformation of a polymeric film during the drying process without any special encapsulation of the sensor. The drying process of a varnish film was monitored over 24 hours by two Bragg gratings, one of them acting as a mechanical deformation sensor and the other one as temperature sensor. Measurements of mass loss were also performed. The results allow evaluating mechanical deformations and identifying three stages of drying: evaporation of water and concentration of solids, irreversible particle contact and coalescence process, and finally, formation of a continuous film.
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Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in SemiconductorsHathcox, Kyle Lee 12 1900 (has links)
The problem with which this investigation is concerned is that of demonstrating the applicability of a particular theory and technique to two materials of different band structure, InSb and HgSe, and in doing so, determining the deformation potentials of these materials. The theory used in this investigation predicts an inversion-asymmetry splitting and an anisotropy of the Fermi surface under uniaxial stress. No previous studies have ever verified the existence of an anisotropy of the Fermi surface of semiconductors under stress. In this work evidence will be given which demonstrates this anisotropy. Although the inversion-asymmetry splitting parameter has been determined for some materials, no value has ever been reported for InSb. The methods presented in this paper allow a value of the splitting parameter to be determined for InSb.
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Fracturing and deformation at the edges of tabular gold mining excavations and the development of a numerical model describing such phenomenaBrummer, Richard Kenneth 10 September 2014 (has links)
D.Ing. (Civil Engineering) / This thesis describes an Investigation Into the nature of the fracture and deformation mechanism which occur at the edges of tabular gold mining excavation. Published Information on these phenomena Is reviewed, and the necessary underground Investigation required to consolidate the previous work Is described. It Is concluded that the rock near the reef plane at the edges of these mining excavations Is subject to stresses sufficiently high to cause It to fracture through the formation of regular patterns of shear planes. These fractures can form In the solid rock some distance ahead of the mining excavation. Nearer the mining face, extension fractures form which result In slabbing or splitting of the exposed rock. An Idealization of the observed rock behavior Is proposed, which Is then incorporated with conventional boundary element techniques Into a numerical model (SEAMS) which Is capable of analyzing two Dimensional tabular mining excavations where the rock near the reef plane at the edge of the mining excavation fractures, deforms and sheds load. A Sensitivity analysis of the numerical model Is described which Identifies those mining parameters capable of being used to advantage In controlling the size of the fracture zone.
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Computational Study of Dislocation Based Mechanisms in FCC MaterialsYellakara, Ranga Nikhil 08 1900 (has links)
Understanding the relationships between microstructures and properties of materials is a key to developing new materials with more suitable qualities or employing the appropriate materials in special uses. In the present world of material research, the main focus is on microstructural control to cost-effectively enhance properties and meet performance specifications. This present work is directed towards improving the fundamental understanding of the microscale deformation mechanisms and mechanical behavior of metallic alloys, particularly focusing on face centered cubic (FCC) structured metals through a unique computational methodology called three-dimensional dislocation dynamics (3D-DD). In these simulations, the equations of motion for dislocations are mathematically solved to determine the evolution and interaction of dislocations. Microstructure details and stress-strain curves are a direct observation in the simulation and can be used to validate experimental results. The effect of initial dislocation microstructure on the yield strength has been studied. It has been shown that dislocation density based crystal plasticity formulations only work when dislocation densities/numbers are sufficiently large so that a statistically accurate description of the microstructure can be obtainable. The evolution of the flow stress for grain sizes ranging from 0.5 to 10 µm under uniaxial tension was simulated using an improvised model by integrating dislocation pile-up mechanism at grain boundaries has been performed. This study showed that for a same initial dislocation density, the Hall–Petch relationship holds well at small grain sizes (0.5–2 µm), beyond which the yield strength remains constant as the grain size increases.
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An analytical method for predicting permanent deformation of foundations under cyclic loadsBouckovalas, George. January 1982 (has links)
Thesis (Sc.D.)--Massachusetts Institute of Technology, Dept. of Civil Engineering, 1982. / Includes bibliographical references. / by George Bouckovalas. / Thesis (Sc.D.)--Massachusetts Institute of Technology, Dept. of Civil Engineering, 1982.
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Kinematic and dynamic simulation of human prosthetic knee jointsManzi, Steven Frank. January 1977 (has links)
Thesis: M.S., Massachusetts Institute of Technology, Department of Mechanical Engineering, 1977 / Includes bibliographical references. / by Steven F. Manzi. / M.S. / M.S. Massachusetts Institute of Technology, Department of Mechanical Engineering
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Shear strength and deformability of rock jointsYip, Chee-Kuen January 1979 (has links)
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Civil Engineering, 1979. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Bibliography: leaves 174-178. / by Chee-Kuen Yip. / M.S.
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Large deflection analysis of thin elastic structures by the assumed stress hybrid finite element method.Boland, Peter Lewis January 1976 (has links)
Thesis. 1976. Ph.D.--Massachusetts Institute of Technology. Dept. of Aeronautics and Astronautics. / Microfiche copy available in Archives and Aero. / Vita. / Bibliography: p.194-204. / Ph.D.
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A method to predict deformations for partially drained conditions in braced excavationsVon Rosenvinge, Theodore January 1980 (has links)
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Civil Engineering, 1980. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Bibliography: leaves 163-166. / by Theodore von Rosenvinge IV. / M.S.
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Investigation of the Effects of Compressive Uniaxial Stress on the Hole Carriers in P-type InSbVaughn, Bobby J. 12 1900 (has links)
The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples of InSb at 77 K, 64 K, and 12 K are reported. Unilaxial compressions as high as 6 kbar were applied to samples oriented in the {001} and {110} directions. The net hole concentration of the samples were about 5x10^13 cm^-3 at 77 K as determined from the Hall coefficient at 24 kilogauss. The net concentration of hole carriers decreases and then increases exponentially with stress at 77 k and 64 k, while at 12 k there is only a monotonic increase of carrier concentration with stress. Analysis of the hole concentration as a function of stress shows the presence of a deep acceptor level located about 90 meV above the valence band edge in additionb to the 10 meV vadmium acceptor level. The shallow acceptor level does not split with stress. The hole density data is represented very well by models which describe both the variation in the net density of states and motion of the acceptor levels as a function of stress.
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