The large volume of water produced during the extraction of oil presents a significant problem due to the high cost of disposal in an environmentally friendly manner. On average, an estimated seven barrels of water is produced per barrel of oil in the US alone and the associated treatment and disposal cost is an estimated $5-10 billion. Besides making oil-water separation more complex, produced water also causes problems such as corrosion in the wellbore, decline in production rate and ultimate recovery of hydrocarbons and premature well or field abandonment. Water production can be more problematic during waterflooding in a highly heterogeneous reservoir with vertical communication between layers leading to unevenness in the flood front, cross-flow between high and low permeability layers and early water breakthrough from high permeability layers. Some of the different technologies that can be used to counteract this involve reducing the mobility of water or using a permeability block in the higher permeability, swept zones. This research was initiated to evaluate the potential effectiveness of the latter method, known as deep diverting gels (DDG) to plug thief zones deep within the reservoir and far from the injection well. To evaluate the performance of DDG, its injection was modeled, sensitivities run for a range of reservoir characteristics and conditions and an economic analysis was also performed. The performance of the DDG was then compared to other recovery methods, specifically waterflooding and polymer flooding from a technical and economic perspective. A literature review was performed on the background of injection profile control methods, their respective designs and technical capabilities. For the methods selected, Schlumberger's Eclipse software was used to simulate their behavior in a reservoir using realistic and simplified assumptions of reservoir characteristics and fluid properties. The simulation results obtained were then used to carry out economic analyses upon which conclusions and recommendations are based. These results show that the factor with the largest impact on the economic success of this method versus a polymer flood was the amount of incremental oil produced. By comparing net present values of the different methods, it was found that the polymer flood was the most successful with the highest NPV for each configuration followed by DDG.

The growth of barrier-type anodic alumina films formed by anodizing relatively rough substrates has been shown to proceed by high field ionic conduction. As a result of the ionic transport and the induced plasticity, smoothing of the oxide surfaces and the metal/oxide interfaces arises. However, such a smoothing model was deduced from topographical observations and, therefore little insight was gained about the transport mechanism leading to the flattening of the anodized specimens. Recently, the development of porous anodic alumina has been demonstrated to proceed by coupled ionic migration and material flow resulting from the field-induced mechanical stress. For rough metal surfaces, the electric field distribution is non-uniform across the specimen surface. Considering the square-dependence of the electrostrictive stress on the electric field and the distribution of the electric field across surface, a significant gradient of mechanical stress may arise across the anodic oxide layer during anodizing. As a result, stress-driven transport may participate, in addition to high field ionic conduction, to the smoothing of the specimen surface. Transport mechanisms were investigated during anodizing of patterned superpure aluminium specimens, by examination of the distributions of incorporated species, used as markers and tracers. The nature of the migration processes have been determined in correlation with the changes in the concentration of the tracer profiles as well as the variations in the anodic oxide film compositions.

No description available.

Doctoral thesis is dealing with the methods for analysis of surfaces by photoelectrons being emitted by X-ray radiation. The methods are: X-ray Photoelectron Spectroscopy - XPS, Angle-resolved XPS - ARXPS and X-ray Photoelectron Diffraction - XPD. The work is especially focused on a method of ARXPS, which is used for the depth compositional analysis of sample surfaces. To obtain an information about the depth composition from the measured ARXPS spectra, a calculation software in the Matlab environment has been developed. The software has been tested both for simulated and real sample data. For an experimental implementation of these methods, a complete manipulation system has been developed. It ensures the transport of samples inside a vacuum apparatus and the experiment itself. The system is controlled mainly by a software and enables to run the experiments automatically.

No description available.

This thesis is devoted to development of techniques to quantify chemical and mechanical influences during chemical mechanical polishing (CMP) near the surface of a polymer film, poly (biphenyl dianhydride-p-phenylenediamine) (BPDA-PDA). To quantify chemical modifications during CMP, an iterative algorithm has been proposed to extract depth profiles based on Ficks second law of diffusion in a multi-element system from data supplied by angle resolved x-ray photoelectron spectroscopy. It has been demonstrated that the technique can be used to quantify the depth of chemical modification of BPDA-PDA surfaces treated with alkaline solutions. Polymer chains near the surface realign themselves during CMP and polarized infrared spectroscopy is chosen in this thesis to quantify chain orientations induced by CMP to evaluate the mechanical influence. A theoretical framework based on a 44 matrix method for spectral simulation together with an oscillator model for BPDA-PDA has been used to obtain quantitative chain orientation information on a post-CMP BPDA-PDA sample by fitting simulated polarized infrared spectra to experimentally generated spectra. Verification of the oscillator model was established from the complex refractive indices of BPDA-PDA films, which were determined using a new method (R/T ratio method) developed in this thesis to extract complex refractive indices of films with biaxial symmetry from polarized transmission and reflection spectra.

The physical properties of the protective passive films formed on the surface of stainless steels under electrochemical polarization in different electrolytes were studied. The structure of these films was analyzed as a function of depth using photoelectron spectroscopy (PES). Depth profiling (using PES) of the surface layer was achieved by either changing the angle of incidence to achieve different analysis depths (ARXPS), by argon ion etching, or by varying the energy of the incoming x-rays by the use of synchrotron radiation. The use of hard x-rays with high resolution (HAXPES) provided novel quantified information about the nickel content underneath the passive films. A complex environment was found in these surface layers composed of an outermost monolayer of iron on top of a layer of chromium hydroxides covering an underlayer of chromium oxides. Molybdenum was enriched in the interface between the metal and oxide. Nickel is enriched underneath the passive film and therefore nickeloxides are only present in the surface layer in low concentrations. A comparison was performed on austenitic and duplex stainless prepared by hot isostatically pressed (HIP) or cast and forged processes. HIP stainless steel was produced using the burgeoning technique of pressing gas atomized powders together. The structure of these steels is far more homogenous with a lower porosity than that of the conventionally prepared equivalents. It was shown that hot HIP austenitic steel had better pitting corrosion resistance than its conventional counterpart. Finally, the duplex steel was cycled in a Li-ion battery to explore its potential application as a current collector. It was shown that the passive film formed in the organic solvents is similar in composition and thickness to the films formed in aqueous solutions. However, it is doubtful if steel could be used as current collector in batteries due to its high reactivity with lithium.

This thesis studies possible methods of semiconductor sample measurement by SIMS, with emphasis on testing different measurement parameters and sample preparation. Part of this master thesis deals with the design of a modified sample holder compatible with the used ToF-SIMS$^{5}$ instrument, IONTOF company, which is capable of tilting the sample by defined angle. This holder enables sample preparation in the main chamber of the instrument without the need of transferring the sample between instruments, which limits the probability of sample contamination. This sample holder was tested by ion machining of TIGBT sample edge and by imaging of a crater edge, created in previous measurement. Edge termination structures prepared by different techniques were measured on the TIGBT samples. Further measurements with the goal of optimizing the depth resolution for thin layers were done on Molybdenum-Silicon-multilayer X-Ray Mirror. Part of the measurements was focused on comparing depth profiles measured at low temperatures. For these measurements the samples with Indium multilayers in GaN substrate were used.

Although the passive films that form on stainless steels have been extensively studied, the concentration depth profiles are not fully understood. Their thinness makes passive films hard to study, but angle-resolved X-ray photoelectron spectroscopy (ARXPS) is a non-destructive technique that can be used to obtain depth information. An iterative approach to deconvolute ARXPS measurements into depth profiles is discussed, and the chemistry of passive films on a molybdenum-containing 316L stainless steel is investigated. Bipolar electrochemistry, in which the sample is placed along an electric field created by two driving electrodes in an electrolyte, is investigated as a screening tool. It is shown that the method is useful to create corrosion gradients on 304 stainless steel, both under pitting and non-pitting conditions. Chromium carbide thin films were deposited by magnetron sputtering with a variety of deposition parameters on stainless steel, and subsequently analyzed. It is shown that these films present a promising material system for protective coatings to improve the corrosion resistance of stainless steels while also maintaining other useful properties, such as low interfacial contact resistance. Particular attention is given to the electrochemical evaluation of the films, whose high carbon concentrations necessitates different interpretations of the electrochemical results compared to for stainless steels.

In this study, flash memory cells with high-k dielectric HfO2 as tunnel oxide and group IV (Si, Ge) nanocrystals were fabricated and tested. The device structure was grown by magnetron sputtering deposition method and analyzed by various diagnostic techniques such as X-ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy. The use of HfO2 tunnel oxide dielectric with high permittivity constant was one of the main purposes of this study. The ultimate aim was to investigate the use of Si and Ge nanocrystals together with HfO2 tunnel oxide in the memory elements. Interface structure of the fabricated devices was studied by XPS spectroscopy. A depth profile analysis was performed with XPS. Nanocrystal formations were verified using Raman spectroscopy technique. The final part of the study includes electrical characterization of memory devices fabricated using Si and Ge floating gate. C-V (Capacitance Voltage) and G-V (Conductance-Voltage) measurements and charge storage behaviour based on C-V measurements were performed. For comparison, structure of Si and Ge layers either in thin film or in the nanocrystal form were studied. A comparison of the C-V characteristics of these two structures revealed that the memory device with thin films do not confine charge carriers under the gate electrode as should be expected for a continuous film. On the other hand, the device with nanocrystals exhibited better memory behavior as a result of better confinement in the isolated nanocrystals. Trace amount of oxygen was found to be enough to oxidize Ge nanocrystals as confirmed by the Raman measurements. The charge storage capability is weakened in these samples as a result of Ge oxidation. In general, this work has demonstrated that high-k dielectric HfO2 and group IV nanocrystals can be used in the new generation MOS based memory elements. The operation of the memory elements are highly dependent on the material and device structures, which are determined by the process conditions.