Li-ion batteries have a huge potential for use in electrification of the transportation sector. The major challenge to be met is the limited energy storage capacity of the battery pack: both the amount of energy which can be stored within the space available in the vehicle (defining its range), and the aging of the individual battery cells (determining how long a whole pack can deliver sufficient energy and power to drive the vehicle). This thesis aims to increase our knowledge and understanding of structural changes induced by aging and usage of the Li-ion battery materials involved. Aging processes have been studied in commercial-size Li-ion cells with two different chemistries. LiFePO4/graphite cells were aged under different conditions, and thereafter examined at different points along the electrodes by post mortem characterisation using SEM, XPS, XRD and electrochemical characterization in half-cells. The results revealed large differences in degradation behaviour under different aging conditions and in different regions of the same cell. The aging of LiMn2O4-LiCoO2/Li4Ti5O12 cells was studied under two different aging conditions. Post mortem analysis revealed a high degree of Mn/Co mixing within individual particles of the LiMn2O4-LiCoO2 composite electrode. Structural changes induced by lithium insertion were studied in two negative electrode materials: in Li0.5Ni0.25TiOPO4 using in situ XRD, and in Ni0.5TiOPO4 using EXAFS, XANES and HAXPES. It was shown that Li0.5Ni0.25TiOPO4 lost most of its long-range-order during lithiation, and that both Ni and Ti were involved in the charge compensation mechanism during lithiation/delithiation of Ni0.5TiOPO4, with small clusters of metal-like Ni forming during lithiation. Finally, in situ XRD studies were also made of the reaction pathways to form LiFeSO4F from two sets of reactants: either FeSO4·H2O and LiF, or Li2SO4 and FeF2. During the heat treatment, Li2SO4 and FeF2 react to form FeSO4·H2O and LiF in a first step. In a second step LiFeSO4F is formed. This underlines the importance of the structural similarities between LiFeSO4F and FeSO4·H2O in the formation process of LiFeSO4F.

This study targets methodology development using Photoelectron Spectroscopy (PES) as a tool for investigating material surfaces. When analysing samples with X-ray Photoelectron Spectroscopy (XPS) and Hard X-ray Photoelectron Spectroscopy (HAXPES), it is important to know the probing depth of the samples. The probing depth can show where possible chemical changes may occur in the material. This information together with chemical shifts can be used to help understand why a material acts in a certain way and how to chemically change it to strengthen it, reduce aging, hinder certain interactions and more. By calculating the inelastic mean free path (IMFP) the probing depth is approximated. One hard and two soft materials were analysed during the thesis. The hard material comprises the investigation of the technological relevant oxidation layer on silicon, a layer that is rather well defined and is used here as a model compound to validate the method. The investigation of the soft material has bearing on studies of organic solar cells and consider conductive polymer films poly(benzimidazobenzophenanthroline) (BBL) and its pyridine analogue PyBBL. The hard material silica (SiO2) was analysed with photoelectron spectroscopy using Ga Kα (9258 eV) x-rays, while the soft solar cell polymers were analysed with both Al Kα (1486 eV) and Ga Kα (9258 eV). For each of the materials a few different samples with varied film thicknesses were studied to obtain a conclusive mean value. Atomic force microscopy (AFM) was done on all the samples after the XPS and HAXPES measurements to study the topography and surface roughness to validate the IMFP results. The results show that SiO2 had an IMFP of 17.97 nm, which is within the calculated values from other sources. The silica samples also had a low surface roughness which further confirms the accuracy of the results. The polymer samples show a high disparity of the IMFP from the Al Kα measurements as well as a high surface roughness from the AFM. The values from the Ga Kα measurements were within the expected range but show signs of contamination. Thus, the results for the polymer samples were not reliable

Les mémoires à pont conducteur (CBRAM) sont une option actuellement étudiée pour la prochaine génération de mémoires non volatiles. Le stockage des données est basé sur la commutation de la résistivité entre les états de résistance élevée (HRS) et faible (LRS). Sous polarisation électrique, on suppose qu'un trajet conducteur est créé par la diffusion des ions de l'électrode active dans l'électrolyte solide. Récemment, une attention particulière a été portée sur les dispositifs contenant un élément semi-conducteur tel que le tellure, fonctionnant avec des courants réduits et présentant moins de défaillances de rétention. Dans ces « subquantum CBRAMs », le filament est censé contenir du tellure, ce qui donne une conductance de 1 atome (G₁atom) significativement réduite par rapport aux CBRAMs standard et permettant ainsi un fonctionnement à faible puissance. Dans cette thèse, nous utilisons la spectroscopie de photoélectrons par rayons X (XPS) pour étudier les réactions électrochimiques impliquées dans le mécanisme de commutation des CBRAMs à base de Al₂O ₃ avec des alliages ZrTe et TiTe comme électrode active. Deux méthodes sont utilisées: i) spectroscopie de photoélectrons par rayons X de haute énergie non destructive (HAXPES) pour étudier les interfaces critiques entre l'électrolyte (Al₂O ₃ ) et les électrodes supérieure et inférieure et ii) les faisceaux d'ions à agrégats gazeux (GCIB), une technique de pulvérisation qui conduit à une dégradation plus faible de la structure, avec un profilage en profondeur XPS pour évaluer les distributions des éléments en profondeur. Des mesures ToF-SIMS sont également effectuées pour obtenir des informations complémentaires sur la répartition en profondeur des éléments. Le but de cette thèse est de clarifier le mécanisme de changement de résistance et de comprendre les changements chimiques aux deux interfaces impliquées dans le processus de « forming » sous polarisation positive et négative ainsi que le mécanisme de « reset ». Pour cela, nous avons effectué une comparaison entre le dispositif vierge avec un état formé, i.e. l'échantillon après la première transition entre HRS et LRS et un état reset, i.e. l'échantillon après la première transition entre LRS et HRS.L'analyse du « forming » positif pour les dispositifs ZrTe / Al₂O ₃ a montré une libération de Te liée à l’oxydation de Zr due au piégeage de l'oxygène de l'Al₂O ₃ sous l’effet du champ électrique. D'autre part, pour les dispositifs TiTe / Al₂O ₃, la présence d'une couche importante d'oxyde de titane à l'interface avec l'électrolyte a provoqué une dégradation permanente de la cellule en polarisation positive. Pour le « forming » négatif, nos résultats montrent un mécanisme hybride, à savoir une combinaison de formation de lacunes d'oxygène dans l'oxyde provoquée par la migration de O2- entraîné par le champ électrique vers l'électrode inférieure et la libération de tellure pour former des filaments conducteurs. De plus, les résultats obtenus par profilométrie XPS et ToF-SIMS ont indiqué une possible diffusion de Te dans la couche d'Al₂O ₃. Lors du « reset », il y a une recombinaison partielle des ions oxygène avec les lacunes d'oxygène près de l'interface TiTe / AlAl₂O ₃ avec une perte de Te. Un mécanisme hybride a également été observé sur les dispositifs ZrTe / Al₂O ₃ pendant le « forming » négatif. En tenant compte du rôle important de la migration d'oxygène dans la formation / dissolution des filaments, nous discutons également des résultats obtenus par XPS avec polarisation électrique in- situ (sous ultravide) pour mieux comprendre le rôle de l'oxydation de surface et des interfaces dans la commutation résistive. / Conducting bridging resistive random accessmemories (CBRAMs) are one option currently investigated for the next generation of non volatile memories. Data storage is based on switching the resistivity between high (HRS) and low (LRS) resistance states. Under electrical bias,a conductive path is assumed to be created by ions diffusion from the active electrode into the solid electrolyte. Recently, special attention has been drawn to devices containing an elemental semiconductor such as tellurium, operating with reduced currents and less retention failures. In these subquantum CBRAM cells, the filament is thought to contain tellurium , yielding a 1-atomconductance (G₁atom) significantly reduced compared to standard CBRAMs and thus allowing low power operation. In this thesis, we use X-rayphotoelectron spectroscopy (XPS) to learn about electrochemical reactions involved in the switching mechanism of Al₂O₃ based CBRAMswith ZrTe and TiTe alloys as active electrode. Two methods are used: i) non-destructive Hard X-ray photoelectron spectroscopy (HAXPES) to investigate the critical interfaces between the electrolyte (Al₂O₃) and the top and bottom electrodes and ii) Gas Cluster Ion Beams (GCIB), a sputtering technique that leads to lower structure degradation, combined with XPS depth profiling to evaluate chemical depth distributions. To FSIMS measurements are also performed to get complementary in-depth chemical information.The aim of this thesis is to clarify the driving mechanism and understand the chemical changes at both interfaces involved in the forming process under positive and negative polarization as well as the mechanism of the reset operation. For that,we performed a comparison between as-grown state, i.e. the pristine device with a formed state,i.e. the sample after the first transition between HRS and LRS, and reset state, i.e. the sample after the first transition between LRS and HRS.Conducting bridging resistive random access memories (CBRAMs) are one option currently investigated for the next generation of non-volatile memories. Data storage is based on switching the resistivity between high (HRS) and low (LRS) resistance states. Under electrical bias,a conductive path is assumed to be created byions diffusion from the active electrode into the solid electrolyte. Recently, special attention has been drawn to devices containing an elemental semiconductor such as tellurium, operating with reduced currents and less retention failures. In these subquantum CBRAM cells, the filament is thought to contain tellurium , yielding a 1-atom conductance (G₁atom) significantly reduced compared to standard CBRAMs and thus allowing low power operation. In this thesis, we use X-ray photoelectron spectroscopy (XPS) to learn about electrochemical reactions involved in the switching mechanism of Al₂O₃ based CBRAMs with ZrTe and TiTe alloys as active electrode. Twomethods are used: i) non-destructive Hard X-rayphotoelectron spectroscopy (HAXPES) toinvestigate the critical interfaces between the electrolyte (Al₂O₃) and the top and bottom electrodes and ii) Gas Cluster Ion Beams (GCIB), a sputtering technique that leads to lower structure degradation, combined with XPS depth profiling to evaluate chemical depth distributions. To FSIMS measurements are also performed to get complementary in-depth chemical information.The aim of this thesis is to clarify the driving mechanism and understand the chemical changes at both interfaces involved in the forming process under positive and negative polarization as well as the mechanism of the reset operation. For that,we performed a comparison between as-grown state, i.e. the pristine device with a formed state,i.e. the sample after the first transition between HRS and LRS, and reset state, i.e. the sample after the first transition between LRS and HRS.

Within this thesis, a comprehensive study of the initial growth process of pure Fe3O4 films and Fe3O4/NiO bilayers on Nb:SrTiO3(001) substrates including the thermal interdiffusion behavior of these bilayers is presented. The sensitive interplay between magnetic, electronic and structural properties of these materials has been investigated in detail. In the first study, the initial growth behavior of high-quality ultrathin magnetite films on SrTiO3(001) deposited by reactive molecular beam epitaxy depending on the deposition temperature has been analyzed. For this purpose, the growth process has been monitored in situ and during the deposition by grazing incidence x-ray diffraction (GIXRD). The second part provides a comparative study of Fe3O4/NiO bilayers grown on both MgO(001) and Nb:SrTiO3(001) substrates exploring morphological, structural and magnetic properties. These structures have been investigated by means of x-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), x-ray reflectivity (XRR) and diffraction (XRD), as well as vibrating sample magnetometry (VSM). Subsequently, thermal stability of these bilayers and the thermally induced interdiffusion process have been studied successively accompanied by a comprehensive characterization of the fundamental electronic, structural and magnetic properties using additional techniques such as angle resolved hard x-ray photoelectron spectroscopy (AR-HAXPES) and x-ray magnetic circular dichroism (XMCD). Finally, an alternative pathway for the preparation of ultrathin nickel ferrite films through interdiffusion is provided.

Ce travail de thèse est focalisé sur la détermination, de manière non-destructive, d'interfaces profondément enterrées dans des empilements multi-couches utilisés dans les conditions de technologie réelles au travers d'une méthode innovante basée sur la photoémission avec utilisation de rayons-x de haute énergie (HAXPES) et l'analyse du fond continu inélastique. Au cours de cette thèse, une procédure numérique a été développée pour quantifier la correspondance entre la mesure du fond continu faite par HAXPES et la simulation du fond continu représentative d'une distribution en profondeur donnée. Cette méthode permet de trouver la distribution en profondeur d'un élément grâce à une procédure semi automatisée. Dans un premier temps cette méthode a été testée en étudiant une couche ultra fine de lanthane enterrée à une profondeur >50 nm dans un dispositif de grille métallique high-k. L'influence des paramètres utilisés lors de l'analyse y est étudiée et révèle l'importance principale d'un paramètre en particulier, la section efficace de diffusion inélastique. La combinaison de mesures HAXPES avec l'analyse du fond continu inélastique utilisant cette nouvelle méthode permet d'augmenter la profondeur de sonde jusqu'à un niveau sans précédent. Ainsi l'échantillon peut être sondé jusqu'à 65 nm sous la surface avec une haute sensibilité à une couche nanométrique. Dans un second temps, la méthode précédemment validée d'analyse de fond continu inélastique est combinée avec une étude haute résolution des niveaux de cœur dans un échantillon servant de source dans un transistor à haute mobilité. Les deux analyses sont complémentaires puisqu'elles permettent d'obtenir la distribution en profondeur des éléments ainsi que leur environnement chimique. Le résultat donne une description complète des diffusions élémentaires dans l'échantillon suivant les différentes conditions de recuit. / This thesis tackles the challenge of probing in a non-destructive way deeply buried interfaces in multilayer stacks used in technologically-relevant devices with an innovative photoemission method based on Hard X-ray PhotoElectron Spectroscopy (HAXPES) and inelastic background analysis. In this thesis, a numerical procedure has been implemented to quantify the matching between a HAXPES measured inelastic background and a simulated inelastic background that is representative of a given depth distribution of the chemical elements. The method allows retrieving depth distributions at large depths via a semi-automated procedure. First, this method has been tested by studying an ultra-thin layer of lanthanum buried at depth >50 nm in a high-k metal gate sample. The influence of the parameters involved in the analysis is studied unraveling the primary importance of the inelastic scattering cross section. The combination of HAXPES with inelastic background analysis using this novel method maximizes the probing depth to an unprecedented level, allowing to probe the sample up to 65 nm below the surface with a high sensitivity to a nm-thick layer. Second, the previously-checked inelastic background analysis is combined with that of high resolution core-level spectra in the case of the source part of a high electron mobility transistor. The two analyses are complementary as they allow retrieving the elemental depth distribution and the chemical state, respectively. The result gives a complete picture of the elemental intermixing within the sample when it is annealed at various temperatures. / Denne afhandling omhandler problemet med at probe dybt begravede grænseflader i multilags stacks, som bruges i teknologisk relevante devices, med en innovativ fotoemissions metode, der er baseret på Hard X-ray PhotoElectron Spectroscopy (HAXPES) og analyse af den uelastiske baggrund. I afhandlingen er en numerisk procedure blevet implementeret til at kvantificere forskellen mellem en HAXPES målt uelastisk baggrund og en modelleret baggrund, som svarer til en given dybdefordeling af atomerne. Metoden muliggør, med en halv-automatisk procedure, at bestemme dybdefordelingen i store dybder. Metoden er først blevet testet ved at studere et ultra-tyndt lag af lanthan, som er begravet i en dybde > 50 nm i en high-k-metal-gate prøve. Indflydelsen af parametrene der ingår i analysen er blevet studeret for at opklare den primære betydning af det anvendte uelastiske spredningstværsnit. Kombinationen af HAXPES med analyse af den uelastiske baggrund og brug af den nye numeriske metode giver en hidtil uset probe-dybde, som giver mulighed for at probe den atomare sammens ætning i op til 65 nm dybde under overfladen og med høj følsomhed af et kun nm tykt lag. Dernæst er den uelastiske baggrundsanalyse blevet kombineret med højopløst core-level spektroskopi for at studere de aktive dele i en høj-elektronmobilitets transistor. De to analyser er komplementære, idet de henholdsvis bestemmer den atomare fordeling og atomernes kemiske bindingstilstand. Resultatet giver et fuldstændigt billede af atomernes omfordeling i prøven når denne opvarmes til forskellige temperaturer.

Materials exhibiting new functionalities due to interdependent electric (e.g. conductivity) and magnetic properties are potentially interesting for spintronics applications. We have investigated electronic and magnetic properties by means of x-ray spectroscopies and SQUID magnetometry in several magnetic materials, often in the form of thin films, which have shown promising properties for applications. One of the main subjects has been studies of inter-diffusion between layers in multilayer structures, which is an important factor for spin-dependent transport and magnetic properties. These studies have been performed by high kinetic (HIKE) photoemission spectroscopy where high photon energies increase the bulk sensitivity in comparison to soft x-ray photoemission spectroscopy. Cu/Ni multilayers were studied mainly as a model system and revealed a diffusion process that was dependent on layer thicknesses and capping materials. CoFeB/MgO/CoFeB, which is used as a magnetic field sensor in hard drives, has recently been shown to exhibit a perpendicular magnetic anisotropy (PMA) switchable by electric fields. We have studied both the interface quality and magnetic properties of thin CoFeB layers exhibiting PMA. Layered structures of full Heusler alloys Co2MnGe/Rh2CuSn have been proposed as a promising candidate for current-perpendicular-to-plane giant magneto-resistance sensors. Using HIKE,we have shown that diffusion of atoms, mainly Mn, occurs at temperatures lower than what is used in device fabrication, which likely contributes to the limited magneto-resistance values obtained. Lately, a large body of research has been performed on semiconductors doped with transition metal elements with the hope to find a ferromagnetic semiconductor at room temperature, a foundation for new devices combining spin and charge in their functionality. We have investigated Co and Fe doping in ZnO for different concentrations of the dopants and different annealing temperatures. The Co and Fe atoms are shown to forms clusters for which antiferromagnetic interactions are dominating.

With an increasing demand for renewable energy sources, research efforts on different solar cell technologies are increasing rapidly. The dye-sensitized solar cell (DSC) is one such technology, taking advantage of light absorption in dye molecules. The liquid based DSC contains several interesting and important interfaces, crucial for the understanding and development of the solar cell performance. Examples of such interfaces include dye-semiconductor, electrode-electrolyte and solute-solvent interfaces. Ultimately, complete interfaces with all these components included are of particular interest. One major challenge is to understand the key functions of these systems at an atomic level and one way to achieve this is to use an element specific and surface sensitive tool, such as photoelectron spectroscopy (PES). This thesis describes the use and development of PES for studying interfaces in the DSC. The materials part of the thesis focuses on interfaces in DSCs studied with PES and the methodology development parts focus on methods to use PES for investigations of solvated heterogeneous interfaces of interest for photoelectrochemical systems such as the DSC. More specifically, beginning with standard vacuum techniques, dye molecules bound to a semiconductor surface have been studied in terms of energy level alignment, surface coverage and binding configuration. To increase the understanding of solvation phenomena present in the liquid DSC, liquid jet experiments have been performed in close combination with theoretical quantum calculations. As a step towards an in-situ method to measure a complete, functioning (in operando) solar cell, methodology development and measurements performed with higher sample pressures are described using new high pressure X-ray photoelectron spectroscopy techniques (HPXPS).

The physical properties of the protective passive films formed on the surface of stainless steels under electrochemical polarization in different electrolytes were studied. The structure of these films was analyzed as a function of depth using photoelectron spectroscopy (PES). Depth profiling (using PES) of the surface layer was achieved by either changing the angle of incidence to achieve different analysis depths (ARXPS), by argon ion etching, or by varying the energy of the incoming x-rays by the use of synchrotron radiation. The use of hard x-rays with high resolution (HAXPES) provided novel quantified information about the nickel content underneath the passive films. A complex environment was found in these surface layers composed of an outermost monolayer of iron on top of a layer of chromium hydroxides covering an underlayer of chromium oxides. Molybdenum was enriched in the interface between the metal and oxide. Nickel is enriched underneath the passive film and therefore nickeloxides are only present in the surface layer in low concentrations. A comparison was performed on austenitic and duplex stainless prepared by hot isostatically pressed (HIP) or cast and forged processes. HIP stainless steel was produced using the burgeoning technique of pressing gas atomized powders together. The structure of these steels is far more homogenous with a lower porosity than that of the conventionally prepared equivalents. It was shown that hot HIP austenitic steel had better pitting corrosion resistance than its conventional counterpart. Finally, the duplex steel was cycled in a Li-ion battery to explore its potential application as a current collector. It was shown that the passive film formed in the organic solvents is similar in composition and thickness to the films formed in aqueous solutions. However, it is doubtful if steel could be used as current collector in batteries due to its high reactivity with lithium.

Within this thesis, (ultra)thin NiFe2O4 (NFO) and CoFe2O4 (CFO) films are prepared via reactive molecular beam epitaxy (RMBE) on MgO(001) and SrTiO3(001) substrates and are characterized in terms of their structural, electronic, and magnetic properties. In a first step, the structural properties of ultrathin off-stoichiometric NixFe(3-x)O4 films (0<x<1.5) deposited via RMBE on MgO(001) are investigated in situ during film deposition by means of synchrotron radiation-based x-ray diffraction (XRD) and ex situ after film growth by high energy surface x-ray diffraction (HESXRD). In the second major step of this work, a more extensive study on the dependence of the cationic ratio in NixFe(3-x)O4 thin films (0<x<2.07) grown on MgO(001) is conducted. The film surface structure and chemical composition is characterized in situ by low energy electron diffraction (LEED) and laboratory-based soft x-ray photoelectron spectroscopy (XPS), respectively. Film thicknesses are determined via analysis of x-ray reflectivity (XRR) data, while the film structure is analyzed by XRD measurements. Further, chemical properties and the electronic structure of the NFO films with focus on the cationic valencies of Ni and Fe cations with varying x is investigated by means of (angle-resolved) hard x-ray photoelectron spectroscopy [(AR-)HAXPES]. Complementary x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) investigations are conducted to obtain information on the cationic site occupancies and on the element-specific magnetic moments. The latter are compared to magnetic properties characterized via superconducting quantum interference device (SQUID) magnetometry. In a third step, the type of substrate is changed to SrTiO3(001) to investigate the influence of a larger strain applied by the substrate to NFO films with varying thicknesses. Structural characterization at the surfaces and in the films is conducted by means of LEED, XRR, and (grazing incidence) XRD, whereas XPS and HAXPES provide information on the chemical composition and electronic structure in the near-surface region and in deeper subsurface layers, respectively. Magnetic properties are characterized by SQUID magnetometry. In a fourth step, an alternative pathway for the formation of ferrite thin films is demonstrated exemplarily for CoFe2O4 films on SrTiO3(001), which are formed by interdiffusion of Fe3O4/CoO bilayers. The interdiffusion process was monitored via XRR, soft XPS and AR-HAXPES to determine the bilayer/film structure, stoichiometry, and chemical properties. Analysis of complementary XAS measurements provides additional information on the occupancies of Fe and Co cations during interdiffusion. Final SQUID magnetometry measurements are performed to gain information on the magnetic properties before and after complete interdiffusion. Overall, within this thesis, it was demonstrated that NFO and CFO thin films can be prepared in high structural quality with sharp interfaces and surfaces, which is crucial for the applicability in the fields of spintronics and spincaloritronics.

This work addresses the growth of ultrathin magnetite (Fe3O4) and cobalt ferrite (CoFe2O4) films and their thorough structural, electronic, and magnetic characterization. In a first step, ultrathin Fe3O4 films are grown on SrTiO3(001) substrates by reactive molecular beam epitaxy (RMBE) and the substrate-induced anomalous strain behavior of the films is investigated by complementary high-resolution transmission electron microscopy (HRTEM) and (grazing incidence) X-ray diffraction [(GI)XRD] measurements. Next, an additional CoO film is deposited on similar Fe3O4/SrTiO3(001) heterostructures to demonstrate an alternative route for the synthesis of cobalt ferrite films through the thermally mediated interdiffusion of both oxide films. The evolution from the initial bilayer stacks to completely reacted cobalt ferrite films is extensively monitored by soft and hard X-ray photoelectron spectroscopy (soft XPS and HAXPES) and (GI)XRD. Complete intermixing and formation of single cobalt ferrite films is confirmed by angular-resolved HAXPES (AR-HAXPES) and X-ray reflectivity (XRR). The study of the cationic distribution resulting from this novel synthesis technique and its effects on the magnetic properties of the cobalt ferrite films is the subject of the subsequent part. Here, X-ray magnetic circular dichroism (XMCD) and superconducting quantum interference device (SQUID) magnetometry serve as key investigation techniques, which are further complemented by AR-HAXPES and atomic force microscopy (AFM) measurements. In a final step, highly crystalline cobalt ferrite films with different cationic stoichiometries are grown on MgO substrates using RMBE while their growth behavior is captured in real-time using operando XRD. Further structural characterization of the films is carried out by low-energy electron diffraction and XRR, whereas HAXPES and SQUID provide fundamental information on the electronic, chemical, and magnetic properties of the films.