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Focused ion beam direct fabrication of micro-optical elements: features compared with laser beam and electron beam direct writingFu, Yongqi, Ngoi, Kok Ann Bryan 01 1900 (has links)
Three types of focused ion beam machine: focused ion beam milling (FIB milling), focused ion beam lithography (FIB lithography), and focused ion beam direct deposition (FIB deposition), are described in detail to compare with electron beam lithography (EBL) and laser beam direct writing (LBW). A diffractive optical element (DOE) with continuous relief, six-annulus, relief depth of 1.17µm, and diameter of 65 µm, fabricated by use of the FIB milling, is cited as an example to illustrate the FIB milling and the comparison with the EBL and the LBW. Micro-cylindrical lens with dimension of 2.8µm×7.5µm×0.95µm in width, length and height, NA=0.2, is given as another fabrication example to illustrate the FIB deposition, which is a unique function for all the direct writing methods. They are all superiors to the EBL and the LBW in the case that optical elements need to be directly fabricated in local area of a device. / Singapore-MIT Alliance (SMA)
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Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides / Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devicesAlshehri, Bandar 07 October 2016 (has links)
Les matériaux semi-conducteurs à base de nitrures disposant de largeur de bande interdite allant de 0,7 à 6 eV, connaissent un intérêt sans cesse croissant pour le développement de dispositifs optoélectroniques du futur. Le but de ces travaux est d’étudier, de concevoir et de développer une photodiode de type PIN à base de matériaux InxGa1-xN et GaN déposés par MOCVD et MBE. Elle est étudiée en considérant différentes configurations de la couche absorbante InGaN, à savoir une couche simple épaisse (SL) ou des puits quantiques (MQW). Toutefois en jouant sur la composition x en indium de la couche InGaN, cela permet la mise au point de différente longueur d'onde d'absorption dans la structure PIN. Des analyses structurales, microstructurales et optiques ont été réalisées par RX, TEM, PL, AFM et MEB pour des photodiodes PIN avec une couche absorbante InGaN de composition en indium variant de 10 à 50%. Nous avons pu vérifier que la qualité du matériau se dégradait lorsque l'on augmentait la teneur en indium et que cela impactait sur les performances de composants. La conception de la structure PIN a été définie pour différentes géométries de photodiode (de 25 à 104 μm²). Des caractérisations statiques et dynamiques de dispositifs fabriquées ont été réalisées afin d'obtenir la réponse de la photodiode. Pour les photodiodes à grande échelle, la valeur de photocourant a atteint un maximum de 3,2 mA démontrant une fréquence de coupure de 940 MHz. La μ-photodiode a révélé 395 μA de photocourant et une fréquence de coupure 1,45 GHz. / III-Nitrides semi-conductor materials with flexible bandgap has revealed a major interest for the future development of optoelectronic devices. The aim of this work is to study, design and develop a PIN photodiode based on InxGa1-xN and GaN materials deposited by MOCVD and MBE. Different configurations are considered for the InGaN absorbent layer: a single layer (SL) and multiple quantum wells (MQW). In order to observe the shift in the absorption wavelength, the composition of the InGaN layer ranges from10 to 50%. Structural, microstructural and optical analysis are performed using XRD, TEM, PL, AFM and SEM. We have verified that the material quality promptly degrades when increasing the indium content which impacts on the device performances. The design of the PIN structure is governed by the limitation of the active surface (from 25 to 104 μm²) in order to limit the global capacitance. Different prototypes are fabricated in clean room before characterization. Static and dynamic characterizations have been realized to qualify the photodiode response. We have investigated the influence of the indium content on the electrical performance. For the large-scale photodiodes, photocurrent value has reached a maximum of 3.2 mA with laser power of 75 mW demonstrating cut-off frequency of 940 MHz. μ-photodiode has revealed 395 μA of maximal photocurrent with cut-off frequency of 1.45 GHz.
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Design and fabrication of experimental facilities in mechanical systems laboratory at Ohio UniversityDesmier, Glenville C. January 1994 (has links)
No description available.
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Hole control in photonic crystal fibresChen, Yong January 2014 (has links)
Photonic crystal fibres (PCFs) are special fibres with air holes which run along the whole fibre length. These holes not only determine the fibres' unique properties, but also provide a new degree of freedom for fibre modications. In this thesis, we focus on hole control in PCFs from two perspectives: during their fabrication and after they have been made. We found for the first time that the direct information of viscosity was not necessary for description of the fibre drawing process. This conclusion matched our experimental results without recourse to any adjustable fitting parameters. By post-processing of PCFs, which modifies the cladding and core structure and shape, we have achieved a series of novel devices for both linear and nonlinear applications. We have demonstrated fibre devices with cores resembling Young's double slits that have good performance in terms of compatibility and intensity enhancement for a specific application in fibre optic spectrometers. The bulk of this thesis reports on higher-order modes and their nonlinear applications. We achieved all-fibre, low loss and broadband mode converters in highly nonlinear PCFs (HNPCFs) which converted the fundamental mode (LP01) to a higher-order mode (LP02), which can then be converted back if necessary. This higher-order mode has been used for supercontinuum (SC) generation and four wave mixing (FWM) at wavelengths unobtainable for the fundamental mode. This is achieved by utilising the profound dispersion properties of the higher-order mode. We also demonstrated another kind of mode conversion: from the fundamental mode to a Bessel-like beam or its Fourier transform version, an annular beam. Three different methods were implemented experimentally to achieve this non-diffractive, self-healing beam.
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A High Performance Automatic Mode-matched Mems GyroscopeSonmezoglu, Soner 01 September 2012 (has links) (PDF)
This thesis, for the first time in the literature, presents an automatic mode-matching system that uses the phase relationships between the residual quadrature and drive signals in a gyroscope to achieve and maintain the frequency matching condition, and also the system allows controlling the system bandwidth by adjusting the closed loop parameters of the sense mode controller, independently from the mechanical sensor bandwidth. There are two mode-matching methods, using the proposed mode-matching system, presented in this thesis. In the first method, the frequency matching between the resonance modes of the gyroscope is automatically accomplished by changing the proof mass potential. The main motivation behind the first method is to tune the sense mode resonance frequency with respect to the drive mode resonance frequency using the electrostatic tuning capability of the sense mode. In the second method, the mode-matched gyroscope operation is accomplished by using dedicated frequency tuning electrodes that only provides a capability of tuning the sense mode resonance frequency generating an electrostatic spring effect on the sense frame, independently from the proof mass potential. This study mainly focuses on the second method because the proof mass potential variation is not desired during the gyroscope operation since the proof mass potential directly affects the drive and sense mode dynamics of the gyroscope. Therefore, a single-mass fully-decoupled gyroscope including the dedicated frequency tuning electrodes are designed. To identify mode shapes and mode frequencies of the designed gyroscope, FEM simulations are performed. The designed gyroscopes are fabricated using SOI-based SOG process. The fabrication imperfections are clarified during the formation of the structural layer of the gyroscope. Next, the closed loop controllers are designed for the drive amplitude control, sense force-feedback, quadrature cancellation, and mode-matching regarding the phase relationship between the quadrature and drive signals. Mode-matching is achieved by using a closed loop controller that provides a DC tuning potential. The mode-matching system consisting of vacuum packaged sensor, drive amplitude control, sense force-feedback, quadrature cancellation, and mode-matching modules is implemented on a printed circuit board (PCB), and then the system level tests are performed.
Tests illustrate that the mode-matching system operates in a desired manner. Test results demonstrate that the performances of the studied MEMS gyroscopes are improved up to 2.6 times in bias instability and 2 times in ARW under the mode-matched condition compared to the mismatched (~200 Hz) condition, reaching down to 0.73 ° / /hr and 0.024 ° / /&radic / hr, respectively. At the mode-matched gyroscope operation, the better performance is obtained to be bias instability of 0.87
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Stability-aware simplification of curve networksNeveu, William 07 1900 (has links)
La conception de réseaux de courbes nécessite la considération de plusieurs facteurs: la stabilité de la structure, l'efficience matérielle, et l'aspect esthétique - des objectifs complexes et interdépendants rendant la conception manuelle difficile.
Nous présentons une nouvelle méthode permettant de simplifier des réseaux de courbes destinés à la fabrication. Pour un ensemble de courbes 3D donné, notre algorithme en sélectionne un sous-ensemble stable. Bien que la stabilité soit traditionnellement mesurée par l'ordre de grandeur des déformations entraînées par des charges prédéfinies, une telle approche peut s'avérer limitante. Elle ne tient ni compte des effets de vibration pour les structures de grandes tailles, ni des multiples possibilités de forces appliquées pour les structures et objets de plus petite taille. Ainsi, nous optimisons directement pour une déformation minimale avec la charge dans le pire des cas (de l'anglais "worst-case").
Notre contribution technique est une nouvelle formulation de la simplification de réseaux de courbes pour la stabilité dans le pire des cas. Celle-ci mène à un problème d'optimisation semi-définie positive en nombres entiers (MI-SDP). Malgré que résoudre ce problème MI-SDP directement est irréaliste dans la plupart des cas, une intuition physique nous mène à un algorithme vorace efficace. Enfin, nous démontrons le potentiel de notre approache à l'aide plusieurs réseaux de courbes et validons l'efficacité de notre méthode en la comparant de façon quantitative à des approaches plus simples. / Designing curve networks for fabrication requires simultaneous consideration of structural stability, cost effectiveness, and visual appeal - complex, interrelated objectives that make manual design a difficult and tedious task. We present a novel method for fabrication-aware simplification of curve networks, algorithmically selecting a stable subset of given 3D curves. While traditionally, stability is measured as the magnitude of deformation induced by a set of predefined loads, predicting applied forces for common day objects can be challenging. Instead, we directly optimize for minimal deformation under the worst-case load. Our technical contribution is a novel formulation of 3D curve network simplification for worst-case stability, leading to a mixed-integer semi-definite programming problem (MI-SDP). We show that while solving MI-SDP directly is impractical, a physical insight suggests an efficient greedy heuristic algorithm. We demonstrate the potential of our approach on a variety of curve network designs and validate its effectiveness compared to simpler alternatives using numerical experiments.
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Microfabrication of an Implantable silicone Microelectrode array for an epiretinal prosthesisMaghribi, M January 2003 (has links)
Thesis (Ph.D.); Submitted to the Univ. of California, Davis, CA (US); 10 Jun 2003. / Published through the Information Bridge: DOE Scientific and Technical Information. "UCRL-LR-153347" Maghribi, M. 06/10/2003. Report is also available in paper and microfiche from NTIS.
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Injection Locked Synchronous Oscillators (SOs) and Reference Injected Phase-Locke Loops (PLL-RIs)Lei, Feiran 25 August 2017 (has links)
No description available.
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Εγκατάσταση και μελέτη αντιδραστήρα τεχνολογικού πλάσματος ραδιοσυχνοτήτων για εφαρμογές στη νανοτεχνολογίαΚονισπολιάτης, Χρήστος 13 October 2013 (has links)
Μια από τις σημαντικότερες τεχνικές εγχάραξης σε μίκρο και νάνο-κλίμακα είναι αυτή της ξηρής εγχάραξης με πλάσμα. Η παρούσα εργασία είχε σαν σκοπό την κατασκευή διάταξης επεξεργασίας ψυχρού πλάσματος χαμηλής πίεσης που να λειτουργεί στο πεδίο των ραδιοσυχνοτήτων, με την προοπτική να χρησιμοποιηθεί για την επεξεργασία πολυμερών και άλλων υλικών που χρησιμοποιούνται στις μονώσεις υψηλών τάσεων ώστε να βελτιωθούν διάφορες ιδιότητές τους όπως η επιφανειακή υδροφοβία και η αντοχή στη ρύπανση. Ειδικότερα:
Στο πρώτο κεφάλαιο γίνεται εισαγωγή του αναγνώστη στην επεξεργασία πλάσματος και συγκεκριμένα στην εγχάραξη και τους φυσικούς και χημικούς μηχανισμούς της. Αναλύεται η διάταξη RIE, η οποία εφαρμόζεται κατά την κατασκευή του συστήματος.
Στο δεύτερο κεφάλαιο περιγράφεται ο σχεδιασμός και η κατασκευή της διάταξης επεξεργασίας, η οποία αποτελείτε από διακριτά μέρη όπως οι θάλαμοι, το πνευματικό σύστημα, το αντλητικό σύστημα και το σύστημα τροφοδοσίας της ισχύος. Δόθηκε ιδιαίτερη προσοχή στη λεπτομερή περιγραφή του κάθε εξαρτήματος που ενσωματώθηκε και ο εξειδικευμένος ρόλος του, ενώ τα αναλυτικά κατασκευαστικά σχέδια παρατίθενται στο παράρτημα.
Στο τρίτο κεφάλαιο γίνεται βασικός χαρακτηρισμός του αντιδραστήρα. Δηλαδή, παρουσιάζονται οι ηλεκτρικές μετρήσεις οι οποίες ταυτίζονται με τη βιβλιογραφία, παρουσιάζονται οπτικές μετρήσεις από τις οποίες γίνεται ταυτοποίηση ενεργών σωματίων, τα οποία επίσης είναι σύμφωνα με τη βιβλιογραφία παρόμοιων συστημάτων και τέλος, γίνεται ενδεικτική επεξεργασία πολυμερούς και έλεγχος του αποτελέσματος, το οποίο είναι η πιστή απόδοση μοτίβου και ρυθμός εγχάραξης 30nm/min.
Στο τέταρτο και τελευταίο κεφάλαιο προτείνονται μελλοντικές εργασίες και βελτιώσεις. / One of the most prominent etching techniques at micro and nano-scale is dry plasma etching. This work’s purpose was the fabrication of a cold plasma low pressure radio-frequency processing rig, with the prospect of being used for polymer and other materials processing, that are used in high voltage insulators, in order to improve their surface properties such as hydrophobicity and pollution resistance. In particular;
In the first chapter the reader is being introduced in plasma processing and in particular in etching and physical and chemical mechanisms. RIE set-up, which is to be applied in our rig, is being analyzed.
In the second chapter the design and fabrication of the processing rig are being described, which includes parts like the chambers, the pneumatic system, the pumping system and the power delivery system. Special care has been given for a detailed description of every added component and its specialized role, while their analytical mechanical designs are collocated in the appendix.
In the third chapter a basic characterization of the reactor is being delivered. Namely, we present electrical measurements which correspond precisely to bibliography and we also present optical measurements from which identification of reactive species is derived, also in accordance to bibliography. Finally, a polymeric substrate is indicatively processed and the result is the faithful pattern transfer by an etching rate of 30nm/min.
In the fourth and last chapter, suggestions for future work and improvements are made.
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Large Enhancement in Metal Film Piezoresistive Sensitivity with Local Inhomogenization for Nanoelectromechanical SystemsMohansundaram, S M January 2013 (has links) (PDF)
High performance and low cost sensors based on microelectromechanical systems (MEMS) have become commonplace in today's world. MEMS sensors, such as accelerometers, gy- roscopes, pressure sensors, and microphones, are routinely used in consumer electronics, automobiles, industrial and aerospace applications. Basically, all these devices mea- sure tiny displacements of micromachined mechanical structures in response to external stimuli. One of the widely used techniques to detect these displacements is piezoresistive sensing. Piezoresistive sensors are popular in MEMS due to their simplicity and robustness.
Traditionally, silicon has been the material of choice for piezoresistors due to its high strain sensitivity or gauge factor. Whereas metal lm piezoresistors typically have low gauge factor that puts them out of favour when compared to silicon. But metal lm piezoresistors have several advantages compared to their semiconductor counterparts, including simple and low-cost fabrication, low resistivity and generally low noise. Low resistance sensors become desirable particularly when the devices are scaled down to nanoelectromechanical systems (NEMS), where signal-to-noise ratio (SNR) performance becomes crucial. Enhancing the gauge factor of metal lms while keeping their low resistance advantage can dramatically improve their SNR performance for NEMS.
This thesis reports a simple method we have developed to enhance the gauge factor of metal lm piezoresistors. We demonstrate this method on specially designed micro- cantilever devices. Using controlled electromigration, we are able to engineer the microstructure of gold lm and transform it into a locally inhomogeneous conductor which resembles a percolation network. This results in more than 100 times higher gauge factor at low to moderate sensor resistance. The SNR possible with our piezoresistor at high frequencies exceeds that of most available systems by at least an order of magnitude. Our locally inhomogeneous metal lm piezoresistor is a promising candidate for high-performance NEMS-based sensors of the future.
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