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The focus of this thesis is the study of the field electron emission (FEE) of diamond and related films synthesized by plasma enhanced chemical vapor deposition. The diamond and related films with different morphologies and compositions were prepared in a microwave plasma-enhanced chemical vapor deposition (CVD) reactor and a hot filament CVD reactor. Various analytical techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy were employed to characterize the surface morphology and chemical composition.<p>The influence of surface morphology on the field electron emission property of diamond films was studied. The emission current of well-oriented microcrystalline diamond films is relatively small compared to that of randomly oriented microcrystalline diamond films. Meanwhile, the nanocrystalline diamond film has demonstrated a larger emission current than microcrystalline diamond films. The nanocone structure significantly improves the electron emission current of diamond films due to its strong field enhancement effect.<p>The sp2 phase concentration also has significant influence on the field electron emission property of diamond films. For the diamond films synthesized by gas mixture of hydrogen and methane, their field electron emission properties were enhanced with the increase of methane concentration. The field electron emission enhancement was attributed to the increase of sp2 phase concentration, which increases the electrical conductivity of diamond films. For the diamond films synthesized through graphite etching, the growth rate and nucleation density of diamond films increase significantly with decreasing hydrogen flow rate. The field electron emission properties of the diamond films were also enhanced with the decrease of hydrogen flow rate. The field electron emission enhancement can be also attributed to the increase of the sp2 phase concentration. <p>In addition, the deviation of the experimental Fowler-Nordheim (F-N) plot from a straight line was observed for graphitic nanocone films. The deviation can be mainly attributed to the nonuniform field enhancement factor of the graphitic nanocones. In low macroscopic electric field regions, electrons are emitted mainly from nanocone or nanocones with the largest field enhancement factor, which corresponds to the smallest slope magnitude. With the increase of electric field, nanocones with small field enhancement factors also contribute to the emission current, which results in a reduced average field enhancement factor and therefore a large slope magnitude.

The focus of this thesis is the study of the field electron emission (FEE) of diamond and related films synthesized by plasma enhanced chemical vapor deposition. The diamond and related films with different morphologies and compositions were prepared in a microwave plasma-enhanced chemical vapor deposition (CVD) reactor and a hot filament CVD reactor. Various analytical techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy were employed to characterize the surface morphology and chemical composition.<p>The influence of surface morphology on the field electron emission property of diamond films was studied. The emission current of well-oriented microcrystalline diamond films is relatively small compared to that of randomly oriented microcrystalline diamond films. Meanwhile, the nanocrystalline diamond film has demonstrated a larger emission current than microcrystalline diamond films. The nanocone structure significantly improves the electron emission current of diamond films due to its strong field enhancement effect.<p>The sp2 phase concentration also has significant influence on the field electron emission property of diamond films. For the diamond films synthesized by gas mixture of hydrogen and methane, their field electron emission properties were enhanced with the increase of methane concentration. The field electron emission enhancement was attributed to the increase of sp2 phase concentration, which increases the electrical conductivity of diamond films. For the diamond films synthesized through graphite etching, the growth rate and nucleation density of diamond films increase significantly with decreasing hydrogen flow rate. The field electron emission properties of the diamond films were also enhanced with the decrease of hydrogen flow rate. The field electron emission enhancement can be also attributed to the increase of the sp2 phase concentration. <p>In addition, the deviation of the experimental Fowler-Nordheim (F-N) plot from a straight line was observed for graphitic nanocone films. The deviation can be mainly attributed to the nonuniform field enhancement factor of the graphitic nanocones. In low macroscopic electric field regions, electrons are emitted mainly from nanocone or nanocones with the largest field enhancement factor, which corresponds to the smallest slope magnitude. With the increase of electric field, nanocones with small field enhancement factors also contribute to the emission current, which results in a reduced average field enhancement factor and therefore a large slope magnitude.

In the study, the effect of current density and rotation speed of grinding disk on characters of Ni-Diamond composite coating are investigated. Experimental results show that current density and film thickness are almost linearly depend. When the current density is increased, the film thickness is increased, too. And it can cover diamond particles much more efficiently. The rotation speed of grinding disk is 20 rpm, the average deposition rate is approx. 2£gm/min in 5 ASD. When reduce the current density to 2.5ASD, the average deposition rate reduce to approx. 1.08£gm/min. The current density is 5 ASD, the covered area of diamond particle in Ni-Diamond composite coating is 60% when the rotation speed of grinding disk is 0rpm. Increasing the rotation speed up to 100 rpm, the covered area of diamond particle in Ni-Diamond composite coating is down to 24% because diamond particle can`t stay in the same position in a long period. Secondary, we use composite electroplating on grinder in process to grind CVD diamond films, the effect of current density and loads on grinding characters of CVD diamond films by using the composite electroplating on grinder in process are investigated. The load is 4.2 kg, the surface roughness Ra is about 0.2 £gm when composite coating grind CVD diamond with no electroplating. But the current density is up to 2.5 ASD, Ra can down to 0.12£gm. The load is increasing to 6.3 kg, the Ra of CVD diamond films is about 0.16£gm.

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The work function of hydrogen-terminated, polycrystalline diamond was studied using ultraviolet photoelectron spectroscopy. Polycrystalline diamond films were deposited onto molybdenum substrates by electrophoresis for grain sizes ranging from 0.3 to 108 microns. The work function and electron affinity were measured using 21.2 eV photons from a helium plasma source. The films were characterized by x-ray photoelectron spectroscopy to determine elemental composition and the sp2/sp3 carbon fraction. The percentage of (111) diamond was determined by x-ray diffraction, and scanning electron microscopy was performed to determine average grain size. The measured work function has a maximum of 5.1 eV at 0.3 microns, and decreases to 3.2 eV at approximately 4 microns. Then the work function increases with increasing grain size to 4.0 eV at 15 microns and then asymptotically approaches the 4.8 eV work function of single crystal diamond at 108 microns. These results are consistent with a 3-component model in which the work function is controlled by single-crystal (111) diamond at larger grain sizes, graphitic carbon at smaller grain sizes, and by the electron affinity for the intervening grain sizes.

The effects of methane (CH4), diborone (B2H6) and nitrogen (N2) concentrations on the structure and photoelectron emission properties of chemical vapor deposition (CVD) polycrystalline diamond films were studied. The diamond films were grown on single-crystal Si substrates using the hot-tungsten filament CVD technique. Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) were used to characterize the different forms of carbon in the films, and the fraction of sp3 carbon to sp3 plus sp2 carbon at the surface of the films, respectively. Scanning electron microscopy (SEM) was used to characterize the surface morphology of the films. The photoelectron emission properties were determined by measuring the energy distributions of photoemitted electrons using ultraviolet photoelectron spectroscopy (UPS), and by measuring the photoelectric current as a function of incident photon energy.

Neste trabalho investigamos a dinâmica de crescimento de filmes de diamante sintetizados por meio de deposição química a vapor ativada por plasma de microondas (CVD). A caracterização foi feita utilizando, fundamentalmente, microscopia de força atômica (AFM). Analisamos o comportamento da rugosidade dos filmes como função da escala de observação e do tempo de deposição. Dessa maneira verificamos a existência de leis de potência para o crescimento e determinamos os expoentes críticos associados a essas leis. Os resultados obtidos estão em bom acordo com o processo de crescimento descrito pela equação estocástica KPZ. Os mecanismos principais são a deposição aleatória de partículas na superfície, o crescimento lateral e a dessorção. / Diamond films have been grown by Microwave Plasma assisted Chemical Vapor Deposition (CVD). The characterization has been made mainly by Atomic Force Microscopy (AFM). We could analyze the roughness behavior with the scale of observation and with the deposition time. We could determine the critical exponents associated with these laws. The results suggest that the growth process is in good agreement with the stochastic growth equation known as KPZ. The most important mechanisms are the random deposition, the lateral growth and the desorption.

Neste trabalho investigamos a dinâmica de crescimento de filmes de diamante sintetizados por meio de deposição química a vapor ativada por plasma de microondas (CVD). A caracterização foi feita utilizando, fundamentalmente, microscopia de força atômica (AFM). Analisamos o comportamento da rugosidade dos filmes como função da escala de observação e do tempo de deposição. Dessa maneira verificamos a existência de leis de potência para o crescimento e determinamos os expoentes críticos associados a essas leis. Os resultados obtidos estão em bom acordo com o processo de crescimento descrito pela equação estocástica KPZ. Os mecanismos principais são a deposição aleatória de partículas na superfície, o crescimento lateral e a dessorção. / Diamond films have been grown by Microwave Plasma assisted Chemical Vapor Deposition (CVD). The characterization has been made mainly by Atomic Force Microscopy (AFM). We could analyze the roughness behavior with the scale of observation and with the deposition time. We could determine the critical exponents associated with these laws. The results suggest that the growth process is in good agreement with the stochastic growth equation known as KPZ. The most important mechanisms are the random deposition, the lateral growth and the desorption.