Thesis (Ph. D.)--University of Washington, 2001. / Vita. Includes bibliographical references (leaves 152-158).

Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.

Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references (leaves 125-132). Also available via World Wide Web.

Thesis (M.S.)--University of Texas at El Paso, 2009. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

Thesis (M. S.)--Chemical and Biomolecular Engineering, Georgia Institute of Technology, 2008. / Hess, Dennis, Committee Member ; Teja, Amyn, Committee Member ; Kohl, Paul, Committee Chair ; Allen, Sue Ann Bidstrup, Committee Co-Chair.

Thesis (M.S. in materials science and engineering)--Washington State University, May 2007. / Includes bibliographical references.

This thesis reports the first detailed study of the stoichiometry control mechanisms and physical properties of ZnO films deposited by dc planar magnetron sputtering of a Zn target in a reactive Ar/0₂ atmosphere. Control of film stoichiometry was achieved using a subsidiary rf discharge at the substrate and a reactive gas baffle surrounding the target. The reactive gas baffle was shown to enhance film oxidation by decreasing the metal flux to the substrate and increasing the oxygen partial pressure near the substrate. Rutherford backscattering analysis of film stoichiometry demonstrated that the effect of the rf discharge was to increase the O/Zn composition ratio. This oxidation was shown to occur through preferential resputtering and preferential evaporation of excess Zn and by activation and ion plating of oxygen species. Resputtering and evaporation rates were found to be enhanced above that expected for bulk Zn, due to the weak bonding of surface adatoms during film growth. Conducting ZnO films produced at various values of the rf-induced substrate bias voltage were characterized for electrical, optical and structural properties using Hall probe,. X-ray diffraction, electron microscope, and visible and infrared spectroscopy techniques. Films deposited at low substrate bias (0 to -50V) were found to have a large Zn excess (15%) resulting in low electron mobilities (1 cm²/Vs), high resistivities (10⁻² Ωcm) and were strongly absorbing in the visible. Films deposited at high substrate bias were nearly stoichiometric, optically transparent and had high electron mobilities (15 cm²/Vs) resulting in low resistivity (10⁻³ Ωcm). The optical properties of transparent conducting films for wavelengths 0.4 to 20 /im were modelled by the Drude theory of free electrons using measured electrical transport properties. The original goal of this work, to develop a heat mirror coating suitable for manufacture, was achieved by bias sputter deposition of ZnO onto uncooled polyester sheet at deposition rates approaching 75 nm/min. The best heat mirror films had a transmission to solar energy of 75% and an 85% reflection of 300 K blackbody radiation. / Science, Faculty of / Physics and Astronomy, Department of / Graduate

<p> High-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon dioxide, silicon nitride and silicon oxynitride. In particular, inductively coupled plasma chemical vapor deposition (ICP-CVD) offers several technological advantages for low temperature processing over other plasma-enhanced chemical vapor deposition (PECVD), such as higher plasma density, lower hydrogen content films, and lower cost. A new ICP-CVD system has been set up at McMaster University. </p> <p> The project focused on the calibration of this system and the establishment of its performance characteristics. A combination of 0 2/ Ar/SiH4 gases was used to deposit Si02 thin films on single-crystal Si wafers under various conditions. Substrate temperatures were calibrated from 200 to 400°C, and were found to linearly relate to heater temperatures. Calibration of the minimum reflected power showed that the ICP source is efficient to generate a stable plasma for 02, N2 and Ar gases within a wide range of flow rates from 3 to 1 OOsccm, while the reflected power remains below 10 Watts. Uniformity was found to be sensitive to many factors. Under optimal conditions, uniformity could be controlled better than 1% with a good shape of thickness distribution. The refractive indexes of the deposited films were measured with ellipsometry and showed an inverse relation with the ratio of oxygen to silane flow rate. </p> / Thesis / Master of Applied Science (MASc)

Thesis (M.S.)--Rochester Institute of Technology, 2006. / Typescript. Includes bibliographical references (leaves 145-146).

Charge trapping dynamics in Si/SiO2/Hf(1-x)SixO2 and III-V film stack systems are characterized using spectroscopic ellipsometry (SE) and second harmonic generation (SHG). For the first time, discrete absorption features within the bandgap of the SiO2 interfacial layer are identified using SE, and their relation to both intrinsic and process-induced defects is proposed. Sensitivity of the absorption features to process conditions is demonstrated and evidence that these defects contribute to Vfb roll-off is presented. Defects in the Hf(1-x)SixO2 films are probed with fs laser-induced internal multi-photon photo-excitation (IMPE) and time dependent electrostatic field induced second harmonic (TD-EFISH) generation. For the as deposited HfO2 films, a unique TD-EFISH response is identified and explained by resonant two photon ionization of a specific point defect and subsequent tunneling of the photoelectrons to the Si substrate. Charge trapping kinetics for all Hf(1-x)SixO2 films are investigated. Two characteristic trap cross sections are identified and found to be insensitive to dielectric film and process conditions, and associated with a surface “harpooning” mechanism. EFISH from non-centrosymmetric III-V media, including GaAs and In0.53Ga0.47As, is also studied. The anisotropic and time dependent SHG response from different chemically treated In0.53Ga0.47As surfaces is clearly distinguishable and associated with a process-induced change in the surface depletion field. / text