The effect of different factors on the operating characteristics of a semiconductor quantum dot (QD) laser is studied. Specifically, the following topics are included in the dissertation: 1) Effect of carrier-density-dependent internal loss in the optical confinement layer (OCL) on the characteristic temperature. Internal optical loss in a QD laser couples the confined-carrier level occupancy in QDs to the free-carrier density in the OCL. Due to this coupling, which is controlled by the threshold condition, the free-carrier density is increased and more temperature-sensitive, and also the confined-carrier level occupancy becomes temperature-dependent. As a result, the characteristic temperature of a laser is considerably reduced. Carrier-density-dependent internal loss also sets an upper limit for operating temperatures of a QD laser and constrains the shallowest potential well depth and the smallest tolerable size of a QD at which the lasing can be attained. The dependences of the characteristic temperature, maximum operating temperature, and shallowest potential well depth on the parameters of the structure are obtained. At the maximum operating temperature or when any parameter of the structure is equal to its critical tolerable value, the characteristic temperature reduces to zero. 2) Effect of excited-states in QDs on the light-current characteristic (LCC). The carrier capture from the three-dimensional reservoir (optical confinement layer – OCL) into the QD ground-state and escape from the ground-state to the OCL are assumed to occur via the QD excited-state. Such a two-step capture places a fundamental limitation on ground-state lasing—the output power saturates at high injection currents. The saturation power is controlled by the transition time between the excited- and ground-state in a QD. The longest, cut-off transition time exists, beyond which no ground-state lasing is possible. The following characteristics are analyzed versus the injection current density and the transition time: occupancies of the ground- and excited-state, free carrier density in the OCL, threshold current density, number of stimulated photons emitted, output power, internal and external differential quantum efficiencies. 3) Effect of longitudinal spatial hole burning (SHB) and multimode lasing on the LCC. The number of modes is shown to remain limited with increasing injection current. The maximum number of modes that can oscillate in a QD laser is analytically estimated. While this number increases with increasing surface density of QDs or cavity length, it remains limited (first increases and then decreases) with increasing scatter in the QD-size. The critical tolerable values of the structure parameters are derived beyond which higher-order longitudinal modes can not oscillate. It is notable that, in addition to the maximum tolerable scatter, there also exists the minimum scatter in the QD-size for each higher-order mode to start lasing. The threshold currents and output powers of modes are computed numerically. The power of the main mode is reduced due to lasing of higher-order modes and spatially nonuniform carrier distribution. As a new mode turns on, kinks appear in the LCCs of existing modes. SHB reduces the total optical power of a laser and contributes to nonlinearity of the overall LCC. The effect is more significant when any of the structure parameters is close to its critical tolerable value. The LCC becomes more linear with improving QD-size uniformity or increasing surface density of QDs or cavity length. / Ph. D.

In this thesis, our primary objective was to theoretically analyze the real world modulation bandwidth of a DTI QD laser and this was done by analyzing the effect of out-tunneling leakage of carriers from QDs, and by analyzing the effect of electron-hole asymmetry on the device characteristics. We are confronted with the following results: 1) Effect of Out-Tunneling Leakage on Modulation Bandwidth in Double Tunneling Injection Quantum Dot Lasers To purely focus on this effect, the conditions of instantaneous carrier exchange between the OCL and QW (on each side of the structure) and tunneling injection into QDs are assumed and closed-form analytical expressions for modulation bandwidth are obtained. The relative decrease in modulation bandwidth, due to this effect, in a DTI QD laser (from plots of modulation bandwidth vs j on increasing wout) is then shown to be small, and at ranges of injection currents of operational interest, nearly negligible. Consequently, it is shown that the DTI laser is a robust device in terms of sensitivity to out-tunneling leakage i.e. much effort need not be paid in suppressing this phenomenon. 2) Effect of Electron-Hole Asymmetry on Modulation Bandwidth of Double Tunneling Injection Quantum Dot Lasers On analyzing the effect of electron-hole asymmetry on the device characteristics of a DTI QD laser, it can be noted (from plots of modulation bandwidth vs injection current) that there is no reduction in the maximum modulation bandwidth i.e. electron-hole asymmetry does not indicate a reduction in the effectiveness of such a DTI design. This is shown to occur as the maximum modulation bandwidth depends on both, the effective differential non-stimulated recombination time as well the photon lifetime in the optical cavity. The photon lifetime being much smaller than the former acts as the dominating factor, and hence we see no appreciable change in the maximum modulation bandwidth. In the course of this analysis, we also see that the actual condition i.e. that of electron hole asymmetry is closer, among the cases of symmetry, to symmetry assuming hole parameters rather than electron parameters. As such, in cases where electron-hole symmetry must be used (in order to facilitate numerical simplifications), a recommendation of this study is to use hole parameters instead. / Master of Science / In this age of internet and optical communications, semiconductor lasers have a profound impact on the way we interact with our world. They act as intermediaries converting digital signals into optical pulses (in order to be transmitted) and then back into digital code. Understandably, the maximum speed at which these lasers can encode and decode information limits the speed of this entire communication network. This speed can be defined as the modulation bandwidth. A new design, the double tunneling-injection (DTI) quantum dot (QD) laser shows considerable promise, however its modulation bandwidth under real world operating conditions was yet to be analyzed. The aim of this thesis was to then theoretically analyze the real world modulation bandwidth of this new semiconductor laser design. This was done by analyzing the effect of unwanted leakage of carriers (out-tunneling) from the active region (Quantum Dots), and by analyzing the effect of electron-hole asymmetry on the device characteristics. The relative decrease in modulation bandwidth, due to leakage of carriers, in a DTI QD laser is then shown to be nearly negligible. Consequently, it is shown that the DTI QD laser is a robust device in terms of sensitivity to out-tunneling leakage, i.e., much effort need not be paid in suppressing this phenomenon. On analyzing the effect of electron-hole asymmetry on the device characteristics of a DTI QD laser, it is shown that there is no reduction in the maximum modulation bandwidth, i.e., electron-hole asymmetry does not indicate a reduction in the effectiveness of such a design. Thus, this analysis reiterates the fact that DTI QD lasers indeed show incredible potential to drastically improve modulation bandwidth and must be investigated further.

A set S of vertices in a graph G is a total dominating set if every vertex of G is adjacent to some vertex in S. The minimum cardinality of a total dominating set of G is the total domination number of G. Two vertices of G are said to be dotted (identified) if they are combined to form one vertex whose open neighborhood is the union of their neighborhoods minus themselves. We note that dotting any pair of vertices cannot increase the total domination number. Further we show it can decrease the total domination number by at most 2. A graph is total domination dot-stable if dotting any pair of adjacent vertices leaves the total domination number unchanged. We characterize the total domination dot-stable graphs and give a sharp upper bound on their total domination number. We also characterize the graphs attaining this bound.

Lab-on-chip systems have been developed for various applications like point of care diagnostics and compact imaging systems. Compact, on-chip imaging systems face a challenge in the integration of multicolor light sources on-chip. This is because of the unavailability of compact, individually addressable, multicolor light sources on a single planar substrate. Colloidal Quantum Dot based Light Emitting Diodes (QDLEDs), which have found wide appeal, due to their unique properties like their tunable and narrow emission bandwidth and easy fabrication, are ideal for lab-on-chip integration. Among different types of QDLED structures implemented, inorganic QDLEDs have shown great promise. We have demonstrated designs and fabrication strategies for creating QDLEDs with enhanced performance. In particular: (I) We introduce a sandwich structure with a spin coated inorganic hole transporting layer of nickel oxide underlying the QD layer and with a spin coated zinc oxide electron transporting layer, with patterning of anode and cathode on the substrate. Compared to the use of sputtered thin films, solution processed charge transporting layers (CTLs) improve robustness of the device, as crystalline ZnO shows low CB and VB edge energy levels, efficiently suppressing hole leakage current resulting in LEDs with longer lifetimes. We also use Atomic Layer Deposition to deposit an additional hole injecting layer to protect the QDs from direct contact with the anode. With this device design, we demonstrate a working lifetime of more than 12 hours and a shelf-life of more than 240 days for the devices. Our solution based process is applicable to micro-contact printed and also spin-coated QD films. QDLEDs with spin-coated CTLs show a lifetime increase of more than three orders of magnitude compared to devices made using sputtered CTLs. (II) We implement strategies of the enhancement of light extraction from the fabricated QDLEDs. We discuss the integration of a two dimensional grating structure based on a metal-dielectric-metal plasmonic waveguide with the metal electrode of a QDLED, with the aim of enhancing the light intensity by resonant suppression of transmitted light. The grating structure reflects the light coupled with the metal electrode in the QDLED and we found an increase of 34.72% in the electroluminescence intensity from the area of the pattern and an increase of 32.63% from photoluminescence of QDs deposited on a metal surface. (III) We demonstrate the capability of our fabricated devices as a light source by measuring intensity across stained cells with QDLEDs of two different wavelengths and show the correlation as expected with the absorption profile of the fluorescent dye. We measure the absorption from the biological samples using QDLEDs fabricated with various design modifications, as a quantification of the improvements in device performance, directly affecting to our target application. / text

Progress in the burgeoning field of organic electronics is enabling the development of novel technologies such as low-cost, printable solar cells and flexible, high-resolution displays. One exciting avenue of research in this field is nanostructured hybrid organics such as quantum dot (QD)-polymer devices. The incorporation of QDs can greatly improve a device’s efficiency and gives one the ability to tune its electrical and optical characteristics. In order for such technologies to be commercially viable, it is important to classify their mechanical integrity and reliability. Surprisingly little is known about the mechanical properties of QD-polymer thin films (<100 nm). This is in part due to challenges of: (1) isolating the mechanical response of a thin film from the underlying substrate, (2) obtaining a homogeneous dispersion of QDs in the film, and (3) the sensitivity of mechanical properties to the inherent rate dependence of polymer deformation (i.e., viscoelasticity). All of these challenges can introduce significant errors in the measurement of mechanical properties. Furthermore, the deformation mechanisms in nanocomposites are not well understood, so it is difficult to predict the effect of adding QDs on the mechanical behavior of films. In this thesis, these challenges are addressed for characterizing the mechanical properties of thin films of CdSe QD-poly[2-methoxy-5-2(2΄-ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV) nanocomposites using quasi-static nanoindentation testing. Elastic modulus, hardness, and creep are measured as a function of QD concentration and loading and unloading rates. The QDs' ligands are removed by pyridine treatment prior to mixing with MEH-PPV to improve dispersion. The films are prepared via spin-coating onto glass substrates and subsequent annealing in air. Efforts are taken in the mechanical testing to minimize errors due to viscoelastic creep and interference from the substrate. Transmission electron microscopy reveals that the QDs are relatively well-dispersed in the polymer matrix. It is observed that adding QDs increases the elastic modulus (E) and hardness (H) of the films, while reducing the viscoelastic creep. Both E and H increase linearly with the volume percent of QDs. E ranges from 14.5 GPa to 52.7 GPa for pure MEH-PPV (0% QDs) and 100% QD films, respectively, while H ranges from 220 MPa to 1430 MPa for the same films, respectively. The films behave viscoelastically at lower QD loading, but assume a more granular character as the loading approaches 100%.

A paracoccidioidomicose (PCM) é caracterizada como uma micose profunda e que acomete, principalmente, indivíduos do sexo masculino e de regiões agrícolas. A infecção ocorre através da inalação de propágulos fúngicos presentes no ambiente, atingindo inicialmente os pulmões e podendo se disseminar para outros órgãos. O diagnóstico precoce da doença previne a formação de sequelas e garante que o trabalhador dê continuidade a sua atividade de vida diária. Os testes de intradermorreação, imunodifusão dupla e ELISA são os mais utilizados no diagnóstico da PCM, no entanto, podem apresentar reatividade cruzada com outras doenças, como Histoplasmose, Candidíase e Criptococose. Em ensaios de Dot Blot com gp43 purificada, foi comprovada a eficiência deste teste para o sorodiagnóstico da PCM em pacientes durante terapia antimicótica, apresentando alta sensibilidade e especificidade. Portanto, objetiva-se com este trabalho utilizar a técnica do ensaio de Dot Blot com a glicoproteína de 43 KDa como um método de diagnóstico para a PCM infecção em indivíduos expostos ao Paracoccidioides brasiliensis na área rural de Alfenas. A prevalência de positividade nos testes Dot Blot, ELISA e IDR foi 57,57% 56,71% 68,83% respectivamente. A proporção de positivos no teste de Dot Blot foi maior no gênero masculino. A maioria dos indivíduos positivos situa-se na faixa etária acima dos 30 anos. Os resultados mostram uma maior concordância entre o teste Dot Blot e ELISA. Devido à dificuldade na padronização no teste Dot Blot e a uma melhor reprodutibilidade e rapidez do teste de ELISA, os resultados sugerem que o teste de ELISA seja mais adequado para levantamento da prevalência da PCM em áreas rurais. / The paracoccidioidomycosis (PCM) is characterized as a deep mycosis and that affects mainly males and agricultural regions. Infection occurs by inhalation of fungal propagules in the environment, initially reaching the lungs and may spread to other organs. Early diagnosis of the disease prevents the formation of sequels and ensures that the worker gives continuity to their activities of daily living. The intradermal tests, immunodiffusion and ELISA are the most used in the diagnosis of PCM, however, may show cross-reactivity with other diseases such as histoplasmosis, candidiasis and cryptococcosis. Therefore, the objective of this study was to use the technique of Dot Blot assay glycoprotein of 43 kDa as a diagnostic method for PCM infection in individuals exposed to P. brasiliensis in rural Alfenas. Different variables were tested in the standardization of Dot Blot assay using sera samples from patient’s positive and negative individuals. The prevalence of positivity in Dot Blot, ELISA and IDR tests was 57.57%, 56.71% and 68.83% respectively. Seropositivity in the Dot Blot test was higher in males. Most positive individuals lie in the age group above 30 years. The results show a better agreement between the Dot Blot and ELISA. Due to the difficulty in standardizing the Dot blot test a better reproducibility and speed of ELISA, the results suggest that ELISA is more suitable for survey of the prevalence of PCM in rural areas.

This thesis is composed of three projects including the AC magnetic susceptibility study of high-temperature superconductor YBa$_2$Cu$_3$O$_{7-\delta}$, the ionic-liquid gating study of the Mott insulator Sr$_2$IrO$_4$, and the single-electron study of quantum dot device with self-assembled nanocrystal PbS. Chapter 1 covers a general introduction to all three projects. The basic background and the motivation for each project are presented. Project I is covered in Chapter 2, Chapter 3, and Chapter 4. The first part of Chapter 2 is a theoretical introduction to the Bardeen-Cooper-Schrieffer theory of superconductivity with its main conclusions presented. This chapter builds a basis for the use of high pressure technique to YBa$_2$Cu$_3$O$_{7-\delta}$ in the later chapters. The rest of Chapter 2 reviews the work in the study of high-temperature superconductors, especially on YBa$_2$Cu$_3$O$_{7-\delta}$, on both experiments and theories and the possible applications of high-temperature superconductors. Chapter 3 introduces the YBa$_2$Cu$_3$O$_{7-\delta}$ sample preparation process and the characterisation. A dry cryomagnetic equipment was employed for the measurement. The results and the discussion are presented in Chapter 4. Project II is described in Chapter 5, Chapter 6, and Chapter 7. Chapter 5 firstly introduces the background knowledge of the gated material SrTiO$_3$ and the technical details of the ionic-liquid gating technique. Then the sample growth and the characterisation are presented. The fabrication process of Sr$_2$IrO$_4$ and SrTiO$_3$ (material for a control experiment) are described in Chapter 6. Chapter 7 covers the measurement and the result of the fabricated devices and related discussion. Project III ranges from Chapter 8, and Chapter 9. A literature review of quantum-dot devices and self-assembled nanocrystals is presented in Chapter 8. The experimental design of this nanocrystal quantum dot device is also included. Following it, the fabrication process of quantum-dot devices and the techniques used for fabrication are introduced in the start of Chapter 9. Chapter 9 also gives a description of the probe-station for measurements. The results and discussion of the measurements are covered in the last section of Chapter 9. Chapter 10 summarises and concludes the three projects stated above and gives some suggestions about the directions for future work.

Colloidal quantum dots (QDs) are promising candidates for the next generation of solar cells due to their tunable band gaps, solution processability and the potential for multiple exciton generation. However their stability and the reduction of surface defects are big challenges and effective surface passivation is needed. Passivations via organic ligands have been shown to be imperfect and hinder the charge transfer in devices. Three different QD systems, chosen as exemplars of different approaches to surface passivation, have been investigated with synchrotron-radiation (SR) depth- profiling X-ray photoelectron spectroscopy (XPS). With this technique the chemical composition of the top few nanometres of a sample can be studied with depth. The study of CdTe QDs with and without a chloride treatment revealed the presence of stoichiometric particles prior to, and the likely coexistence of Cl atoms and organic ligands on the surfaces of the QDs after the treatment. The chloride treatment led to a better surface passivation of the QDs resulting in photoluminescence quantum yields of up to 97.2%. Shell thickness estimations using a core/shell/shell model were performed of the chloride treated sample and XPS highlighted the complexity of the structure of the sample. CdTe QDs passivated by a thick CdSe shell were investigated. Indications for an improvement of the stability of the QDs against oxidation were found. The Se:Te ratio was equivalent to a CdSe shell of 0.3-0.4 nm which was significantly smaller than intended, indicating that the butylamine ligand exchange and/or the washing of the sample reduced the thickness of the CdSe shell drastically. The third system studied was PbS QDs that were passivated with a thin CdS shell. XPS of the thoroughly washed QDs confirmed the presence of Cd in an amount equivalent to a 0.13-0.18 nm thick shell. This is thicker than the 0.05 nm shell expected from absorption spectroscopy. A study of ageing of the PbS/CdS QDs revealed that oxidation took place on the surface of the QDs. It was found that sulfur oxidised in stages leading to highly oxidised SO4^2- components. Upon long-term ageing Pb oxidised more rapidly than S, and either some Pb and/or Cd migration or some decomposition of the QDs occurred. The PbS/CdS nanoparticles were more stable than a comparable PbS colloidal quantum dot sample from the literature. The study of the PbS/CdS QDs prior to and after the second wash- ing cycle after a mercaptopropionic acid (MPA) ligand exchange revealed, amongst other things, the removal of MPA and a reduction of the Cd:Pb ratio indicating that (parts of) the QDs decomposed through the ligand exchange or the washing. In addition to the results of the nanoparticles studied some limitations of the study of colloidal QDs with SR depth-profiling XPS are discussed.

This thesis studies p-i-n GaAs solar cells with self-assembled InAs quantum dots (QDs) inserted. The values of this work lie in three aspects. First, by comparing the cell performance with QDs in the i-region and the n-region, the photocurrent (PC) production from QDs by thermal activation and/or intermediate band (IB) absorption is proved to be much lower in efficiency than tunneling. Second, the efficiency of PC production from QDs, characterized by PC spectrum, is helpful to design QD-based photodetectors. Third, closely spaced InAs QD layers allow a strong inter-layer tunneling, leading to an effective PC production from QD deep states, potential for solar cell application. Fourth, from the temperature-dependent PC spectra the minority photohole thermal escape is found to be dominant on PC production from QDs in the n-region. The thermal activation energy reflects the potential variations formed by electron filling in QDs. Apart from InAs QDs, this thesis also explores the blinking correlation between two colloidal CdSe QDs. For QD distance of 1 µm or less, there is a bunched correlation at delay τ = 0, meaning that the two QDs blink synchronously. Such correlation disappears gradually as QD distance increases. The correlation is possibly caused by the stimulated emission between the two nearby QDs. / QC 20120507

Light manipulation is an important method to enhance the light-matter interactions in micro and nano photonic materials and structures by generating usefulelectric field components and increasing time and pathways of light propagationthrough the micro and nano materials and structures. For example, quantum wellinfrared photodetector (QWIP) cannot absorb normal incident radiation so thatthe generation of an electric field component which is parallel to the original incident direction is a necessity for the function of QWIP. Furthermore, the increaseof time and pathways of light propagation in the light-absorbing quantum wellregion will increase the chance of absorbing the photons.The thesis presents the theoretical studies of light manipulation and light-matter interaction in micro and nano photonic materials and structures, aiming atimproving the performance of optical communication devices, photonic integrateddevices and photovoltaic devices.To design efficient micro and nano photonic devices, it is essential to knowthe time evolution of the electromagnetic (EM) field. Two-dimensional and three-dimensional finite-difference time-domain (FDTD) methods have been adopted inthe thesis to numerically solve the Maxwell equations in micro and nano photonicmaterials and structures.Light manipulation in micro and nano material and structures studied in thisthesis includes: (1) light transport in the photonic crystal (PhC) waveguide, (2)light diffraction by the micro-scale dielectric PhC and metallic PhC structures(gratings); and (3) exciton-polaritons of semiconductor quantum dots, (4) surfaceplasmon polaritons at semiconductor-metallic material interface for subwavelengthlight control. All these aspects are found to be useful in optical devices of multiplebeam splitter, quantum well/dot infrared photodetectors, and solar cells. / QC 20120507