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Along with the growth of Taiwan¡¦s capital markets, the public tend to serve stocks as the main investment tool. Underwriting markets are also monitored by investors. Generally, Taiwanese firms¡¦ stocks possess ¡§honeymoon periods¡¨ after they went public, in which the stocks kept gaining prices for consecutive days. Due to the phenomenon, companies tend to went public once the requirements are satisfied. On the other hand, investors are willing to purchase such stocks, thus let the underwriting market prosper. The aspect of initial public offerings (IPOs) is also gaining attention of researchers. This research aims at examining the relation between Taiwanese firms¡¦ IPOs¡¦ initial return and the Monday effect and Intra-month effect. This thesis also tried to discover that whether Taiwanese IPOs possess differences between size and industry groups. The results indicate that Taiwanese IPOs have lower return if issued in Mondays, which is the Monday effect. The reason may be that the closed market in weekends allowed investors to spend more time to search and to analyze information and to hinder themselves from overreaction. In addition, when issuing companies are determining underwriting prices, they tend to serve discount as a risk compensation for the uninformed investors, thus when investors have more time to analyze their investment decisions, the issuing companies need not to discount to induce investors.

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This paper investigates the device behavior of a novel pseudo tri-gate ultrathin channel vertical MOSFET with source/drain tie (S/D tie), the PTG-SDT VMOS. The S/D tie (SDT) of this novel device circumvents short channel effect (SCEs). A double- surround-gate (the mid-gate and the spacer gate) is also presented to investigate the effect of S/D tie. According to the 2D simulation, three kinds of pseudo vertical MOSFETs are now proposed. The first one is to investigate the device characteristics of the new PTG-SDT VMOS. Our proposed structure also mitigates self-heating effect (SHEs), thereby enhancing the drain drive current and the thermal stability. Owing to its ultrathin channel (Tsi = 10 nm), the PTG-SDT VMOS has a very low subthreshold swing of 60 mV/dec, for channel lengths from 90 nm down to 40 nm. It is also found to control drain-induced barrier lowing (DIBL) and to have an excellent Gm of 4.5 mS/£gm at the channel length 40 nm. The second one, we proposed the ultrathin channel pseudo tri-gate vertical MOSFET with natural source/drain tie (NSDT), the big source/drain tie (BSDT), the SDT and the without source/drain tie (WSDT) VMOS. The PTG VMOS of this novel structure circumvents short channel effects (SCEs). A new natural S/D tie (N-SDT) is also presented to investigate of the PTG VMOS. According to 2D simulation, the PTG-NSDT also show the excellent thermal dissipated such as the lattice temperature in the drain-on-top configuration and drain-on-bottom configuration were improved 47% and 66% respectively, thereby enhancing the ON-state and OFF-state current ratio. In addition, the dependence of GIDL current on body bias and temperature is characterized and discussed when the source and drain interchanged. Although the PTG VMOS keep the double-surround-gate and S/D tie structure, the design flow is more simplify even increase the drain drive current and immunity the SHEs.

Proefschrift--Universiteit van Amsterdam. / In English. Thesis statement and summary in Dutch. Includes bibliographical references (p. [52]).

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010. / Committee Chair: Cressler, John; Committee Member: Citrin, David; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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