Wu, Chin Kong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2009. / Includes bibliographical references (p. 122-131). / Abstract also in Chinese. / ABSTRACT (English) --- p.i / ABSTRACT (Chinese) --- p.iii / ACKNOWLEDGMENTS --- p.v / TABLE OF CONTENTS --- p.vi / Chapter CHAPTER 1 --- Introduction --- p.1 / Chapter 1.1 --- Organic light-emitting- diode (OLED) --- p.2 / Chapter 1.2 --- Organic photovoltaics --- p.5 / Chapter 1.3 --- Organic field-effect transistor --- p.10 / Chapter CHAPTER 2 --- Properties of organic semiconductor --- p.17 / Chapter 2.1 --- Organic semiconductors --- p.17 / Chapter 2.2 --- Electronic structure of organic semiconductors --- p.18 / Chapter 2.3 --- Disorder and traps in organic semiconductors --- p.19 / Chapter 2.4 --- Charge carriers transport in organic semiconductors --- p.20 / Chapter 2.4.1 --- Polaron model --- p.21 / Chapter 2.4.2 --- Scher-Montroll model --- p.21 / Chapter 2.4.3 --- Gaussian disorder model --- p.23 / Chapter 2.5 --- Metal/organic interfaces --- p.25 / Chapter CHAPTER 3 --- Experimental details --- p.28 / Chapter 3.1 --- Sample preparation --- p.28 / Chapter 3.1.1 --- Organic semiconductors used in this thesis --- p.28 / Chapter 3.1.2 --- Cleaning of substrate --- p.29 / Chapter 3.1.3 --- Deposition of organic layer --- p.29 / Chapter 3.1.4 --- Deposition of metal --- p.31 / Chapter 3.2 --- Electrical characterization methods --- p.32 / Chapter 3.2.1 --- Current density 一 voltage (J-V) measurement --- p.32 / Chapter 3.2.2 --- Dark Injection Space-Charge-Limited (DI-SCL) transient current measurement --- p.38 / Chapter 3.2.3 --- Temperature varied J-V measurement --- p.43 / Chapter 3.2.4 --- Admittance spectroscopy --- p.44 / Chapter CHAPTER 4 --- Charge transport properties in single-organic-layer devices --- p.51 / Chapter 4.1 --- Experimental scheme --- p.51 / Chapter 4.2 --- Experimental results and discussion --- p.53 / Chapter 4.2.1 --- J-V measurements --- p.53 / Chapter 4.2.1.1 --- MTDATA --- p.53 / Chapter 4.2.1.2 --- NPB --- p.59 / Chapter 4.2.2 --- DI-SCL transient current measurement --- p.64 / Chapter 4.2.3 --- Admittance spectroscopy --- p.68 / Chapter 4.2.3.1 --- MTDATA --- p.68 / Chapter 4.2.3.2 --- NPB --- p.75 / Chapter 4.3 --- Conclusion --- p.79 / Chapter CHAPTER 5 --- Charge transport properties in double-organic-layer devices with organic-organic heterojunction --- p.81 / Chapter 5.1 --- Introduction --- p.81 / Chapter 5.2 --- Experimental scheme --- p.82 / Chapter 5.3 --- Experimental results and discussion --- p.84 / Chapter 5.3.1 --- ITO/MTDATA/NPB/A1 device --- p.84 / Chapter 5.3.2 --- ITO/MTDATA/Alq3/LiF/Al device --- p.105 / Chapter 5.4 --- Conclusion --- p.115 / Chapter CHAPTER 6 --- Conclusions and future work --- p.101 / Chapter 6.1 --- Conclusions --- p.118 / Chapter 6.2 --- Future work --- p.120 / REFERENCES --- p.122

Chan, Wing Chit = (La₀.₆₇Ca₀.₃₃MnO₃/La₀.₃₀Ca₀.₇₀MnO₃/La₀.₆₇Sr₀.₃₃MnO₃/La₀.₃₀Ca₀.₇₀MnO₃)多層薄膜的電子輸運特性 / 陳榮捷. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2009. / Includes bibliographical references. / Abstract also in Chinese. / Chan, Wing Chit = (La₀.₆₇Ca₀.₃₃MnO₃/La₀.₃₀Ca₀.₇₀MnO₃/La₀.₆₇Sr₀.₃₃MnO₃/La₀.₃₀Ca₀.₇₀MnO₃) duo ceng bo mo de dian zi shu yun te xing / Chen Rongjie. / Abstract --- p.i / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.viii / List of Tables --- p.xiii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Review of Magnetoresistance --- p.1 / Chapter 1.1.1 --- Giant magnetoresistance (GMR) --- p.4 / Chapter 1.1.2 --- Colossal magnetoresistance (CMR) --- p.7 / Chapter 1.2 --- Possible origins of CMR in manganites --- p.10 / Chapter 1.2.1 --- Double exchange mechanism --- p.10 / Chapter 1.2.2 --- Tolerance factor --- p.14 / Chapter 1.2.3 --- Jahn-Teller Distortion --- p.16 / Chapter 1.2.4 --- Magnetic phase diagram and charge ordering (CO) --- p.19 / Chapter 1.2.5 --- Phase separation and percolation theory --- p.23 / Chapter 1.2.6 --- Phase separation at the interfaces in thin films --- p.28 / Chapter 1.3 --- Our motivation --- p.29 / Chapter 1.4 --- Literature review of some manganite multilayer systems --- p.31 / Chapter 1.4.1 --- Ferromagnetic (FM)/antiferromagnetic (AF) multilayers --- p.31 / Chapter 1.4.2 --- Ferromagnetic (FM)/insulating oxides multilayers --- p.32 / Chapter 1.4.3 --- Ferromagnetic (FM)/ferromagnetic (FM) multilayers --- p.33 / Chapter 1.5 --- Scope of this thesis --- p.34 / References --- p.36 / Chapter Chapter 2 --- Instrumentation / Chapter 2.1 --- Thin film deposition --- p.40 / Chapter 2.1.1 --- Facing-target sputtering --- p.41 / Chapter 2.1.2 --- Vacuum system --- p.44 / Chapter 2.2 --- Characterization --- p.46 / Chapter 2.2.1 --- α-step profilometer --- p.46 / Chapter 2.2.2 --- x-ray diffraction (XRD) --- p.46 / Chapter 2.2.3 --- Resistance measurement --- p.49 / References --- p.51 / Chapter Chapter 3 --- Epitaxial growth and characterization of single layer thin films / Chapter 3.1 --- Introduction --- p.52 / Chapter 3.2 --- Fabrication of the sputtering targets --- p.52 / Chapter 3.3 --- Epitaxial growth of single layer thin films --- p.53 / Chapter 3.3.1 --- Substrate materials --- p.54 / Chapter 3.3.2 --- Deposition conditions --- p.55 / Chapter 3.3.3 --- Deposition procedures --- p.57 / Chapter 3.3 --- Characterization of single layer thin films --- p.58 / References --- p.63 / Chapter Chapter 4 --- La0 67Ca0.33MnO3/La030Ca0.70MnO3/La067Sr0.33MnO3/La0.30Ca070MnO3 multilayers / Chapter 4.1 --- Sample preparation --- p.64 / Chapter 4.2 --- Structure characterization of as-deposited samples --- p.68 / Chapter 4.3 --- Transport properties of as-deposited samples --- p.79 / Chapter 4.3.1 --- Series of samples with fixed Lao.3oCao.7oMn03 barrier layer thickness --- p.79 / Chapter 4.3.3.1 --- Samples with thin ferromagnetic layers: C20 and S20 series --- p.82 / Chapter 4.3.1.2 --- Series of samples with thick ferromagnetic layers --- p.87 / Chapter 4.3.1.3 --- Parallel resistors network --- p.96 / Chapter 4.3.2 --- Series of samples with varying Lao.3oCao.7oMn03 barrier layer thickness --- p.101 / Chapter 4.4 --- Discussion --- p.108 / References --- p.114 / Chapter Chapter 5 --- Conclusion / Chapter 5.1 --- Conclusion --- p.116 / Chapter 5.2 --- Future outlook --- p.119 / References --- p.121

Wai, Kwai Fong = 錳氧化物 - 鈮摻雜之鈦酸鍶異構結的電流電壓關係測量 / 韋桂芳. / "Sept 2007." / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Wai, Kwai Fong = Meng yang hua wu - ni shan za zhi tai suan si yi gou jie de dian liu dian ya guan xi ce liang / Wei Guifang. / Acknowledgement / Abstract / 論文摘要 / Table of content / List of Figures / List of Tables / Appendix A / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Structure and properties of perovskite manganites / Chapter 1.2 --- Magnetoresistance (MR) / Chapter 1.3 --- Giant Magnetoresistance (GMR) / Chapter 1.4 --- Colossal Magnetoresistance (CMR) / Chapter 1.4.1 --- Exchange interaction and CMR / Chapter 1.5 --- p-n junction / Chapter 1.5.1 --- Fundamentals of a p-n homojunction / Chapter 1.5.2 --- Deviations from the Ideal Diode / Chapter 1.5.2.1 --- Zener breakdown / Chapter 1.5.2.2 --- Avalanche / Chapter 1.5.3 --- Heterojunction / Chapter 1.6 --- Research motivation / Chapter 1.7 --- Scope of the thesis / References / Chapter Chapter 2 --- Experimental details / Chapter 2.1 --- Thin film deposition / Chapter 2.1.1 --- Facing target sputtering / Chapter 2.1.2 --- Vacuum system / Chapter 2.1.3 --- Deposition procedure / Chapter 2.2 --- Oxygen annealing system / Chapter 2.3 --- Silver electrode coating apparatus / Chapter 2.4 --- Characterization / Chapter 2.4.1 --- Alpha-step profilometer / Chapter 2.4.2 --- X-ray diffractometer / Chapter 2.4.3 --- Electrical transport property measurement / Chapter 2.4.3.1 --- Measurement of resistance as a function of temperature (RT) / Chapter 2.4.3.2 --- Measurement of I-V characteristics of a junction / References / Chapter Chapter 3 --- Epitaxial LSMO/STON heterojunction / Chapter 3.1 --- Sample preparation / Chapter 3.2 --- Results and Analysis / Chapter 3.2.1 --- Structural analysis / Chapter 3.2.2 --- R-T measurement / Chapter 3.2.3 --- I-V measurement / Chapter 3.2.3.1 --- Analysis of diffusion voltage and breakdown voltage / Chapter 3.2.3.2 --- Construction of energy band diagram of LSMO/STON at room temperature / Chapter 3.2.3.3 --- Investigating how the energy band structure varies with the temperature / Chapter 3.2.3.4 --- Further development of the energy band analyzing method to wide-p/narrow-n heteroj unction / Chapter 3.2.3.5 --- Forward-biased deviations from ideal / Chapter 3.2.3.6 --- Discussion on the reasons for deviations from ideal / Chapter 3.2.4 --- MR determination / References / Chapter Chapter 4 --- Epitaxial [LSMO/PCMO] multilayers and p-n junction / Chapter 4.1 --- [LSMO/PCMO]/NGO multi-layered thin films / Chapter 4.1.1 --- Sample preparation / Chapter 4.1.2 --- Results and analysis / Chapter 4.1.2.1 --- Structural analysis / Chapter 4.1.2.2 --- R-T measurement / Chapter 4.2 --- [LSMO/PCMO]/STON multi-layered junction / Chapter 4.2.1 --- Sample preparation / Chapter 4.2.2 --- Results and analysis / Chapter 4.2.2.1 --- Structural analysis / Chapter 4.2.2.2 --- R-T measurement / Chapter 4.2.2.3 --- I-V measurement / Chapter 4.2.2.3.1 --- Analysis of diffusion voltage and breakdown voltage / Chapter 4.2.2.3.2 --- Investigating the energy band structure as a function of temperature / Chapter 4.2.2.3.3 --- Forward-biased deviations from an ideal junction diode / Chapter 4.2.2.3.4 --- Review on MR calculation / Chapter 4.2.2.3.5 --- Analysis of MR of [LSMO(8 A ) /PCMO(8 A)]/STON and LSMO/STON / References / Chapter Chapter 5 --- [La0 4Ca0.6MnO3/La0.8Ca0.2MnO3］p-n junction / Chapter 5.1 --- Sample preparation / Chapter 5.2 --- Result and analysis / Chapter 5.2.1 --- Structural analysis / Chapter 5.2.2 --- R-T measurement / Chapter 5.2.3 --- I-V measurement / Chapter 5.2.3.1 --- Analysis of diffusion voltage and breakdown voltage / Chapter 5.2.3.2 --- Investigating the energy band structure as a function of temperature / Chapter 5.2.3.3 --- Forward-biased deviations from ideal / Chapter 5.2.3.4 --- MR analysis / Chapter Chapter 6 --- Conclusion / Chapter 6.1 --- Conclusion / Chapter 6.2 --- Future outlook

Fang, Qianying = 基於掃描探針顯微鏡(SPM)的關於鋁摻雜氧化鋅(ZnO:Al)局域電學性質之研究 / 方倩莹. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references (leaves 97-100). / Text in English; abstracts in English and Chinese. / Fang, Qianying = Ji yu sao miao tan zhen xian wei jing (SPM) de guan yu lü shan za yang hua xin (ZnO:Al) ju yu dian xue xing zhi zhi yan jiu / Fang Qianying. / Chapter I. --- Abstract / Chapter II. --- Acknowledgement / Chapter III. --- Table of contents / Chapter IV. --- List of figures / Chapter V. --- List of tables / Chapter 1 --- Introduction / Chapter 1.1 --- Motivations / Chapter 1.2 --- Outline of thesis / Chapter 2 --- Experimental Conditions and Techniques Used / Chapter 2.1 --- Sample preparation / Chapter 2.1.1 --- Radio frequency magnetic sputtering / Chapter 2.1.2 --- Substrates / Chapter 2.1.3 --- Thermal evaporation / Chapter 2.1.4 --- Thermal annealing / Chapter 2.2 --- Microscopic electrical measurement / Chapter 2.2.1 --- Conductive atomic force microscope (c-AFM) / Chapter 2.2.2 --- Scanning capacitance microscope (SCM) / Chapter 2.2.3 --- Surface Potential (SP) / Chapter 2.3 --- SEM and cathodoluminescence spectroscopy / Chapter 3 --- Calibrations / Chapter 3.1 --- Calibrations of c-AFM measurements / Chapter 3.1.1 --- Reproducible images / Chapter 3.1.2 --- Further statistical analysis / Chapter 3.1.3 --- Sample thickness effect / Chapter 3.1.4 --- Conclusions / Chapter 3.2 --- Calibrations of cathodeluminescence (CL) measurements / Chapter 3.2.1 --- Effect of removing residual magnetic field / Chapter 3.2.2 --- Effect of Faraday cup moving / Chapter 3.2.3 --- Time effect / Chapter 3.2.4 --- Effect of mirror shift / Chapter 3.2.5 --- Effect of electron beam shift / Chapter 3.2.6 --- Conclusions / Chapter 3.3 --- Calibrations of scanning capacitance microscope (SCM) measurements / Chapter 3.3.1 --- SCM images and morphological dependence of as-deposited AlOx/ZnO thin film / Chapter 3.3.2 --- Comparison between as-deposited and e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.3 --- SCM images and morphological dependence of e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.4 --- Conclusions / Chapter 4 --- Experimental Results and Data Analysis / Chapter 4.1 --- Conductive Atomic Force Microscope (c-AFM) / Chapter 4.1.1 --- Effect of scan rate / Chapter 4.1.2 --- Dual images and morphological dependence / Chapter 4.1.3 --- Statistic microscopic current-voltage (I-V) / Chapter 4.1.4 --- Schottky barrier at Pt-ZnO contact / Chapter 4.1.5 --- C-AFM artifact / Chapter 4.2 --- Scanning Capacitance Microscope (SCM) / Chapter 4.2.1 --- Dual images and morphological dependence / Chapter 4.2.2 --- Statistic microscopic SCM data-voltage (dC/dV-V) / Chapter 4.3 --- Surface Potential (SP) / Chapter 5 --- Discussions and Conclusion / Chapter 5.1 --- Mechanism / Chapter 5.2 --- Conclusions / Chapter 5.3 --- Future plan / Chapter 6 --- References

Bibliography: leaves 97-112. / vii, 112 leaves : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / Thesis (Ph.D.)--University of Adelaide, Dept. of Physiology, 2003

Graduation date: 1998

The behavior and application of organic semiconductor materials depend strongly on their molecular structure, and molecular interactions. Several studies of intermolecular interactions in functionalized polyacene materials are presented. The degree and onset of aggregation of a functionalized anthradithiophene derivative was studied as a function of concentration in two different host matrices. The molecular environment was found to influence the degree and onset, but not the nature of aggregate formed. The effect of aggregation on photoconductivity was also studied. In a blend of two different anthradithiophene derivatives, the intermolecular separation was found to affect the nature of the interaction, transitioning from energy transfer at large intermolecular distances to the formation of an emissive excited state complex at smaller intermolecular distances. This complex was shown to have effects on both photoluminescence and photoconductivity. Finally, a single molecule fluorescence microscopy system was built and characterized. Software was written to process data produced from the system and several classes of functionalized polyacenes were studied at the single molecule level. In particular, the photophysics and molecular orientation of various derivatives were quantified. A new solution-processable, photoconductive, polycrystalline host material was found to be suitable for single molecule imaging, and the molecular orientations of individual molecules were found to depend on both their molecular structures and their local nano-environment. / Graduation date: 2013

Oscar P. Manley. / "September 1, 1960." Based partly on a thesis submitted to the M.I.T. Dept. of Electrical Engineering, June, 1960. / Bibliography: p. 35. / Army Signal Corps Contract DA36-039-sc-78108. Dept. of the Army Task 3-99-20-001 and Project 3-99-00-000.

M.K. Wilkinson. / "May 7, 1952." / Bibliography: p. 18. / Army Signal Corps Contract DA36-039 sc-100, Project no. 8-102B-0. Dept. of the Army Project no. 3-99-10-022.

ASTRACT Using an aqueous solution of ammonia hydroxide aqua, hydrosilicofluoric acid and boric acid, an oxynitride film can be deposited. The deposition rate and refractive index increase with the mole concentration of ammonia hydroxide aqua. However, the refractive index decreases as the mole concentration of ammonia hydroxide aqua becomes too high. The leakage current density as a function of mole concentration of ammonia hydroxide aqua was studied. The best experimental condition is found that incorporating ammonia hydroxide aqua of 0.8M will get good results. The SIMS depth profiles shows nitrogen and hydrogen concentration accumulate at SiON/Si interface. A deposition model is proposed and LPD-SiON can be suggested that it is a combination of N-less LPD-SiON film and N-rich accumulated layer at the interface. The best characteristics of LPD-SiON film are in the range of 110Å-thick to 210Å-thick. When the thickness scales down to 110Å, all the properties become poor. Photo-LPD-SiON process is proposed as a reference of Photo-LPD-SiO2. By mercury lamp illumination, the performances of J-E relationship and C-V characteristic become better. Nitrogen atomic concentration can increase by photo-enhancement checked by analysis of SIMS depth profile and FTIR spectrum. A novel technique of LPD process with applying a bias during the growth is proposed and it is called Bias-LPD-SiON. A model of Bias-LPD-SiON deposition mechanism is also proposed. On the negative bias substrate, high nitrogen atomic concentration can be attained. The J-E characteristic at positive bias of 0.1V and negative bias in a range of 0.1V to 1V are better than traditional LPD-SiON film. Then, the deposition rate of positive bias and negative bias LPD-SiON films at 0.1V can reach 32Å/min and 26Å/min, respectively. Therefore, high quality and high deposition rate can be prepared by Bias-LPD-SiON.