Thesis (doctoral)--Ludwig-Maximilians-Universität, Munich, 1934.

The high temperature, high pressure electrochemical behavior of A516 Gr. 70 carbon steel in aqueous alkaline sulfide solutions was studied by means of polarization tests and cyclic volt-ammetry. The effects of variation of temperature (90-150°C), sulfide concentration (0-3 m), scan rate (1-50 mV/s) and scan range, and the effects of stirring and polarization at the switching potentials between scans were investigated. Passivation was consistent with formation of a protective Fe₂O₃ film. An understanding of the electrochemical behavior of iron in the alkaline sulfide solutions was facilitated by the construction of E-pH diagrams for S-H₂0 and Fe-S-H₂O systems at 25, 100 and 150°C. Sulfide, S²-, currently considered to be stable only at extremely high pH, was excluded from the E-pH diagrams. Reference electrodes, compatible with sulfide solution, were designed for use with an autoclave. The response of the Ag/Ag₂S electrode (SSSE) to variation of temperature, sulfide and hydroxide concentration, and chloride addition was studied. Liquid junction potential and thermal liquid junction potential corrections were applied. The SSSE was not reliably predictable thermodynamically, but was stable and was proven effective in the polarization study. The electrochemical potentials of inert metal reference electrodes, Hg and Pt, were found to be consistent with the mixed potential between polysulfide Sײ⁻, and thiosulfate, S₂O₃²⁻. The Tafel slopes from anodic polarization curves of Pt in alkaline sulfide solutions were consistent with oxidation of HS⁻ to S₂0₃²⁻ at the mixed potential. At more noble potentials, oxidation to polysulfide occurred. Reaction path mechanisms were proposed. Understanding of sulfide oxidation aided in interpretation of the electrochemical behavior of steel in the alkaline sulfide solutions. / Applied Science, Faculty of / Mining Engineering, Keevil Institute of / Graduate

A dissertation submitted to the faculty of Engineering, University of the Witwatersrand, in fulfillment of the requirements for the degree of Master of Science in Engineering. / The role of chromite dissolution in the smelting of ferrochromium was investigated with the object of improving the throughput and chromium recovery of the process. The solubility of a typical Transvaal chromite in silicate slags with cao/si02 ratios from 0,03 to 0,55 at 1550·C and 1650·C was determined. Synthetic slags were melted in porous chromite crucibles and the slag underwent repeated reactions with the chromite grains as it penetrated the crucible wall. Finally the slag came into equilibrium with -''the ,original chromite towards the outer part of the crucible wall. Microprobe analysis of this slag yielded the maximum or saturated solubilities of the chromite constituents in the slag. The solubility of cr203 was found to be low (-1 per cent) while the remaining components' solubilities (A1203 -16 per cent, FeO)T 12 per cent and MgO-8 per cent) were significantly higher. CaO/Sio2 ratios greater than 0,1 lowered the solubility of Mg0 significantly (e.g. from 14,1 per cent to 5,8 per cent at 1650·C). The complete dissolution of this chromite in these slags requires the slag to contain less than the solubility limits of each of these species simultaneously. It was recommended that the best way to achieve this in practice would be a well-stirred slag bath containing suspended carbon particles, in which a cao/Sio2 ratio of less -than 0,1 was maintained. Further work to investigate the effect of slag composition (including Na20 and CaF2) on the kinetics of chromite reduction in such a system was recommended. / AC 2018

No description available.

No description available.

This investigation is an attempt to verify the original work done by George Antonoff and Anne Rowley, and to contribute specific data on the action of a magnetic field on aluminum cells. Experiments of the type they have described have been performed and an extensive set of data has been collected. It was thought that if the results of Antonoff and Rowley could be duplicated, further investigation would be warranted. However, the experiments have produced negative results. These results are described in detail in these chapters.

No description available.

The purpose of this work was to determine the liquidus surface of the cryolite-rich portion of the ternary system Na₃AlF₆-CaF₂-AlF₃ and to establish the effect of Al₂O₃ on the operation of the Hall cell electrolysis. A series of isotherm of the cryolite-rich portion were graphed. It was shown that pseudo-binary phase diagrams of Al₂O₃ and bulk composition in the cryolite-rich portion of the Na₃AlF₆-CaF₂-AlF₃ system were found to be simple eutectic. The temperatures and the alumina contents of the double solubility limit, two important parameters for the Hall cell, of the joins 95 Na₃AlF₆/5 AlF₃-Na₃AlF₆, 90 Na₃AlF₆/ 10 NaCaAlF₆ and 85 Na₃AlF₃/15 AlF₃-NaCaAlF₆ were determined. The cryolite liquidus temperature of the quaternary system Na₃AlF₆-CaF₂-AlF₃-Al₂O₃ was found to be expressed by: T_Liq.. (C) = 1009.4 + 4.059(CaF₂) - 1.167(CaF₂)² + 0.968 x (CaF₂)(AlF₃) - 0.105(CaF₂)(AlF₃)² + 0.073 x (CaF₂)²(AlF₃) + 0.002(CaF₂)² (AlF₃)² - 4.165 x (AlF₃) - 0.054(AlF₃)² - 5.33(Al₂O₃) for CaF₂ 3.8~11.25%, AlF₃ 5~20%. / M.S.

The main objective of this study was to determine fundamental information related to ionbeam-induced damage to gallium arsenide (GaAs). The study covers experimental results concerning defect creation in GaAs versus parameters such as implantation energy, nature of GaAs substrate, crystalline orientation, and annealing. Transport and deep level transient spectroscopy (DLTS) results are presented for 50 keV Si-implanted and RTA (rapid thermal annealing) GaAs with (100) and (211) substrate orientations. Several electron traps are identified and their possible origins discussed. It is observed that (211) GaAs, after Si-implantation and RTA, has higher residual damage than (100) oriented GaAs. The electrical properties of active GaAs on Cr-doped and undoped GaAs substrates are compared. The DLTS response of active layers on Cr-doped GaAs is significantly different from those on undoped GaAs. A viable explanation that accounts for this difference is presented. The effects of furnace annealing on electrical properties of 50 keV, 4 x 10¹³ cm⁻² Si-implanted GaAs are addressed. A correlation between the structural recovery and electrical activation is established. The effects of 2 and 6 MeV Si implantation followed by RTA on the electrical characteristics of GaAs are investigated in detail. MeV Si-implantation and RTA generates active buried layers in GaAs. The buried layer quality is found to be at least comparable to a similarly processed keV Si-implanted active GaAs layer. The deep traps in MeV-implanted GaAs are identified and explained in terms of their probable origins. The deep level behavior of MeV Si-implanted and RTA GaAs is distinctly different from keV Si-implanted and RTA GaAs. This difference is largely due to the dynamic annealing occurring during MeV implantation. MESFETs formed on MBE-grown Al_.35Ga_.65As and low temperature MBE-grown GaAs buffer layers have shown peculiar characteristics (improved transconductance, sharper carrier profile, variability in threshold voltage, significant backgating, etc.). The effects of Al_.35Ga_.65As buffers and low temperature GaAs buffers on the electrical properties of the overlying active GaAs are investigated. Transport, DLTS, and SIMS (Secondary Ion Mass Spectroscopy) measurements are employed to explain the abnormalities in buffered MESFETs. Deep states and impurities are identified in buffers; they appear to migrate toward the channel-buffer interface during processing. The defects originating from the buffer are correlated to the performance of MESFETs formed on them. The effects of ion processing parameters, substrate chemistry, buffer layers, and annealing on the electrical characteristics of active GaAs layers are identified. An understanding of these effects is extremely critical to obtain reproducible devices with desirable characteristics. / Ph. D.

Thesis (MEng) -- Stellenbosch University, 2014. / ENGLISH ABSTRACT: The copper sulphate leach solutions produced during the final pressure leach stages in base metal refinery processes contain low concentrations of other precious metals (OPMs, namely Rh, Ru and Ir ) and impurities in addition to the base metals (BMs) of interest. Se and Te impurities, in particular, must be removed from the leach solution before it is fed to copper electrowinning because these species have adverse effects on electrowinning efficiency. Currently, these elements are being precipitated from the leach solution with sulphurous acid. Se precipitation is satisfactory but Te removal still proves challenging. Previous studies have shown that tellurium can either be precipitated as cuprous telluride from copper sulphate solutions by reduction with sulphurous acid alone, or by the addition of SO2 as a precipitating agent and metallic copper as an additional precipitating agent. The objective of this study was to evaluate the effects of different process variables on Te and Se recovery in order to propose operating conditions at which increased tellurium precipitation can be achieved with minimal co-precipitation of base metals of interest (notably Cu and Ni). This would also aid in the development of a better understanding of tellurium and selenium precipitation mechanisms in CuSO4-H2SO4 medium. / AFRIKKANSE OPSOMMING: Die kopersulfaat logingsoplossing wat gedurende die finale druklogingstadia in basis metaal raffinaderye produseer word bevat, behalwe vir die basis metale van belang, ook lae konsentrasies ander edelmetale (AEM, naamlik Rh, Ru, en Ir) sowel as onsuiwerhede. Se en Te onsuiwerhede, in die besonder, moet vanuit die logingsoplossing verwyder word voordat die oplossing na die koper elektrowinning gevoer word omdat hierdie spesies negatiewe effekte op die elektrowinning effektiwiteit het. Hierdie elemente word tans met swaweligsuur vanuit die logingsoplossing gepresipiteer. Se presipitasie is voldoende, maar die Te verwydering bly steeds problematies. Vorige studies het getoon dat tellurium as kuprotelluried vanuit kopersulfaat oplossings presipiteer kan word deur middel van reduksie met swaweligsuur alleen, of met die byvoeging van SO2 as presipiteermiddel en metallieke koper as addisionele presipiteermiddel. Die doelwit van hierdie studie was om die effekte van verskillende prosesveranderlikes op Te en Se presipitasie te ondersoek ten einde bedryfstoestande voor te stel wat verbeterde tellurium presipitasie toelaat met minimale kopresipitasie van basis metale van belang (hoofsaaklik Cu en Ni). Dit sal ook bydra tot die ontwikkeling van ʼn beter begrip van die tellurium en selenium presipitasie meganisme in ʼn CuSO4-H2SO4 medium.