Using current technology, it is now possible to probe material at atomic length scales, increasing our fundamental understanding of material behavior and properties. Metastable β titanium alloys are a subset of titanium alloys with huge potential for the aerospace sector. However, they exhibit atomic transformations which, even after 60 years of research, are still disputed. For example, these alloys are strengthened using the ω phase, but the mechanism by which this phase forms and its stability are still in question. The aim of this PhD project was to investigate the strengthening of metastable Ti-15wt.%Mo by understanding the stability and transformation pathways which make the metastable β titanium alloy class unique. Athermal ω shares the same composition as the β matrix and is formed by rapid cooling from the β phase field. The classical theory of athermal ω formation is based upon a diffusion-less mechanism in which consecutive pairs of {111}β planes collapse together. However, latest high-resolution electron microscope observations have suggested chemical alterations occur as well, which give reason to challenge this classical formation mechanism. Two novel methods were explored to determine the nature of the ω phase: 1) electron imaging of thin material at different collection angles and 2) total X-ray scattering analysis of large volumes of material. Complementary techniques are invaluable since thin foil artefacts were identified. In particular, a new B2 structured phase in the Ti-15wt.%Mo alloy was observed only in thin electron transparent material. Experimental data from the two new methods were compared to simulations. It was found that a frozen phonon description of the ω structure provided a best fit in both scenarios. The results are therefore consistent with the classical theory of ω formation but the collapse of the {111}β planes towards the ω phase is not considered complete.

Dans cette thèse, différentes techniques de microscopie électronique à transmission et à balayage (STEM : scanning transmission electron microscopy) ont été améliorées et appliquées à plusieurs structures essentiellement à base de semiconducteurs. La création de nouveaux matériaux et dispositifs a été à l'origine du développement des civilisations et des méthodes de caractérisation expérimentales sont nécessaires pour étudier les nouvelles structures afin de les comprendre et de les améliorer. Avec le développement des nanotechnologies, la microscopie électronique est devenu un outil indispensable du fait de sa grande résolution spatiale et de la pléthore d'information qu'elle permet d'obtenir.Dans la première partie de cette thèse, les nombreux développements réalisés sont présentés. Plusieurs sous-techniques du STEM ont été améliorés : création de moirés obtenus par balayage (SMF : scanning moiré fringes), nano-diffraction électronique en mode précession (NPED : nano-beam precession diffraction) et haute résolution en STEM (HR-STEM). Ces développements permettent d'obtenir des cartographies quantitatives sur les déformations et les champs électriques et indirectement des informations chimiques.Dans la deuxième partie, les techniques développés sont utilisés pour étudier différentes structures et les résultats sont comparés à ceux d'autres techniques comme l'holographie et le contraste de phase différentielle (DPC : differentail phase contrast). Dans une structure photovoltaïque à base de matériaux II-VI, une accumulation d'un matériau II a été détectée aux interfaces grâce aux mesures des déformations. Des champs de déformations très faibles capitaux pour le fonctionnement des isolants topologiques à base de HgTe ont été mesurés. Des cartographies de déformation très précises ont été obtenues dans des transistors SiGe. Dans des couches AlN/GaN des cartographies de déformation et de champs électriques ont pu être réalisés simultanément révélant l'importance des dislocations. Des domaines d'inversion coeur-coquille ont été mis en évidence pour la première fois. Ils ont été observés dans de nombreux fils de GaN élaborés par épitaxie par jet moléculaires. Les positions des atomes dans un domaine d'inversion ont pu être mesurés à quelques picomètres près et comparés à des calculs ab-initio. / In this work, different scanning transmission electron microscopy (STEM) techniques have been developed and applied to several material systems. The creation of novel materials and devices has been a backbone of society’s development and characterization methods are needed to investigate these materials in order to understand and improve them. With the advent of nanotechnology, electron microscopy has become an invaluable tool, as it is able to visualize the atomic structure of thin samples and produces a plethora of quantifiable signals.In a first part, the numerous developments realized in this thesis are presented. Several STEM based techniques have been improved: scanning moiré fringes (SMF), nano-beam precession diffraction (NPED) and high-resolution STEM (HR-STEM). These developments allow for more accurate strain measurements, the quantitative mapping of electric fields and to realize accurate chemical profiles.In a second part, the developed methods are applied to different material systems and compared to more classical techniques, like holography and differential phase contrast (DPC). In a II/VI solar cell structure the interface chemistry is determined from strain with atomic resolution. Very faint strain gradients that are vital for the topological insulator properties of HgTe are measured. Accurate two-dimensional strain maps are obtained of a SiGe transistor. Simultaneous strain and electric field maps of m-plane AlN/GaN reveal the influence of dislocations in the material. Core-shell type inversion domains are described for the first time in GaN nanowires. They were found in many samples grown by molecular beam epitaxy. Thanks to quantitative analysis the exact atomic structure of inversion domains in GaN is described and compared to simulations.

The vectorial nature (polarization) of light plays a significant role in light-matter interaction that leads to a variety of optical devices. The polarization property of light has been exploited in imaging, metrology, data storage, optical communication and also extended to biological studies. Most of the past studies fully explored and dealt with the conventional polarization state of light that has spatially symmetric electrical field geometry such as linear and circular polarization. Recently, researchers have been attracted to light whose electric field vector varies in space, the so-called optical vector vortex beam (VVB). Such light is expected to further enhance and improve the efficiency of optical systems. For instance, a radially polarized light under focusing condition is capable of a tighter focus more than the general optical beams with a uniform polarization structure, which improves the resolution of the imaging system [1]. Interaction of ultrafast laser pulses with matter leads to numerous applications in material processing and biology for imaging and generation of microfluidic systems. A femtosecond pulse, with very high intensities of (10^{12} - 10^{13} W/cm^2), has the potential to trigger a phenomenon of optical breakdown at the surface and therefore induce permanent material modification. With such high intensities and taking into account the fact that most materials possess large bandgap, the interaction is completely nonlinear in nature, and the target material can be modified locally upon the surface and even further in bulk. The phenomenon of optical breakdown can be further investigated by studying the nonlinear absorption. Properties like very short pulse duration and the high irradiance of ultrashort laser pulse lead to more precise results during the laser ablation process over the long pulsed laser. The duration of femtosecond laser pulse provides a high resolution for material processing because of the significant low heat-affected zone (HAZ) beyond the desired interaction spot generated upon irradiating the material. Under certain condition, the interaction of intense ultrashort light pulses with the material gives rise to the generation of periodic surface structures with a sub-micron periodicity, i.e., much smaller than the laser wavelength. The self-oriented periodic surface structures generated by irradiating the material with multiple femtosecond laser pulses results in improving the functionality of the material's surface such as controlling wettability, improving thin film adhesion, and minimizing friction losses in automobile engines, consequently, influences positively on many implementations. In this work, we introduced a new method to study complex polarization states of light by imprinting them on a solid surface in the form of periodic nano-structures. Micro/Nanostructuring of diamond by ultrafast pulses is of extreme importance because of its potential applications in photonics and other related fields. We investigated periodic surface structures usually known as laser-induced periodic surface structures (LIPSS) formed by Gaussian beam as well as with structured light carrying orbital angular momentum (OAM), generated by a birefringent optical device called a q-plate (QP). We generated conventional nano-structures on diamond surface using linearly and circularly polarized Gaussian lights at different number of pulses and variable pulse energies. In addition, imprinting the complex polarization state of different orders of optical vector vortex beams on a solid surface was fulfilled in the form of periodic structures oriented parallel to the local electric field of optical light. We also produced a variety of unconventional surface structures by superimposing a Gaussian beam with a vector vortex beam or by superposition of different order vector vortex beams. This thesis is divided into five chapters, giving a brief description about laser-matter interaction, underlying the unique characterization of femtosecond laser over the longer pulse laser and mechanisms of material ablation under the irradiation of fs laser pulse. This chapter also presents some earlier studies reported in formation of (LIPSS) fabricated on diamond with Gaussian. The second chapter explains the properties of twisted light possessing orbital angular momentum in its wavefront, a few techniques used for OAM generation including a full explanation of the q-plate from the fabrication to the function of the q-plate, and the tool utilized to represent the polarization state of light (SoP), a Poincar'e sphere. Finally, the experimental details and results are discussed in the third and fourth chapters, respectively, following with a conclusion chapter that briefly summarizes the thesis and some potential application of our findings.

Crystallographic image processing (CIP) is a technique first used to aid in the structure determination of periodic organic complexes imaged with a high-resolution transmission electron microscope (TEM). The technique has subsequently been utilized for TEM images of inorganic crystals, scanning TEM images, and even scanning probe microscope (SPM) images of two-dimensional periodic arrays. We have written software specialized for use on such SPM images. A key step in the CIP process requires that an experimental image be classified as one of only 17 possible mathematical plane symmetry groups. The current methods used for making this symmetry determination are not entirely objective, and there is no generally accepted method for measuring or quantifying deviations from ideal symmetry. Here, we discuss the crystallographic symmetries present in real images and the general techniques of CIP, with emphasis on the current methods for symmetry determination in an experimental 2D periodic image. The geometric Akaike information criterion (AIC) is introduced as a viable statistical criterion for both quantifying deviations from ideal symmetry and determining which 2D Bravais lattice best fits the experimental data from an image being processed with CIP. By objectively determining the statistically favored 2D Bravais lattice, the determination of plane symmetry in the CIP procedure can be greatly improved. As examples, we examine scanning tunneling microscope images of 2D molecular arrays of the following compounds: cobalt phthalocyanine on Au (111) substrate; nominal cobalt phthalocyanine on Ag (111); tetraphenoxyphthalocyanine on highly oriented pyrolitic graphite; hexaazatriphenylene-hexacarbonitrile on Ag (111). We show that the geometric AIC procedure can unambiguously determine which 2D Bravais lattice fits the experimental data for a variety of different lattice types. In some cases, the geometric AIC procedure can be used to determine which plane symmetry group best fits the experimental data, when traditional CIP methods fail to do so.

No description available.

La Microscopie Electronique à Balayage Environnementale permet l'observation de liquides dans certaines conditions de pression et température. En travaillant en transmission, i.e. en mode STEM (Scanning Transmission Electron Microscopy), des nano-objets présents au sein du liquide peuvent même être analysés (mode « Wet-STEM»). Dans les solutions concentrées, l'arrangement du soluté peut changer être un paramètre microstructural important, qu’il est alors nécessaire de caractériser. Dans ce contexte, le but de ce travail est de développer la tomographie électronique sur des suspensions liquides en utilisant le mode STEM en ESEM, de manière à obtenir la structure 3D de nano-objets dispersés dans un liquide. Dans une première partie, le contraste entre des nanoparticules et le film d’eau est étudié en combinant des images expérimentales Wet-STEM (en 2D) et des simulations Monte Carlo. Deux types de nano-matériaux sont choisis : des nanoparticules d’or sphériques, de diamètre environ 40 nm, dispersées dans l’eau, ainsi qu’une suspension aqueuse de latex SBA-PMMA, contenant 3% de PMMA utilisé comme tensioactif stérique. La comparaison entre les résultats simulés et expérimentaux permet d’estimer comment le contraste entre l’eau et les nanomatériaux est affecté par l’épaisseur du film d’eau. Dans une deuxième partie, des expériences de tomographie sont réalisées à sec sur des films de polyuréthane contenant des nanotubes de carbone multiparois greffés ou non, en utilisant une platine développée précédemment au laboratoire. Le volume a pu être reconstruit correctement. Cependant, en effectuant une acquisition 3D sur des suspensions de latex SBA-PMMA, le contrôle de la température de l’échantillon s’est révélé insuffisant. Nous proposons une amélioration à la fois de la platine et des conditions d’observations permettant de mieux contrôler l’évaporation et la condensation de l’eau sur des échantillons liquides. La troisième partie est dévolue à une analyse approfondie d’une suspension de latex SBA-PMMA, de différentes concentrations (d’un état dilué à très concentré), les acquisitions étant effectuées avec les conditions optimisées. L’arrangement des particules de latex est comparé à des modèles issus de la littérature, et avec des résultats expérimentaux obtenus par cryo-SEM sur suspensions congelées. Nous présentons ensuite une étude du même latex en présence de tensioactif. La couche de tensioactif peut être mise en évidence dans les volumes reconstruits et segmentés. En conclusion, nous résumons les potentialités de la tomographie wet-STEM pour la caractérisation de nanomatériaux solides et liquides. Des perspectives sont proposées pour continuer dans l’exploration de ces potentialités et des limites de la technique. / ESEM (Environmental Scanning Electron Microscopy) allows the observation of liquids under specific conditions of pressure and temperature. When working in the transmission mode, i.e. in STEM (Scanning Transmission Electron Microscopy), nano-objects can even be analyzed inside the liquid (“wet-STEM” mode). Moreover, in situ evaporation of water can be performed to study the materials evolution from the wet to the dry state. This work aims at developing electron tomography on liquid suspensions using STEM-in-ESEM, to obtain the 3D structure of nano-objects dispersed in a liquid. In a first part, Monte Carlo simulations and 2D wet-STEM experimental images are combined to study the contrast. Two kinds of liquid nano-materials are chosen as the sample: spherical gold particles (diameter around 40 nm) in suspension in water; latex SBA-PMMA suspension, a copolymer derived from styrene and metacrylic acid esters in aqueous solution, 3% PMMA shell included as steric surfactant. The comparison between simulated and experimental results helps to determine how water can affect the contrast of hydrated nano-materials. Tomography experiments are then performed on dry PU-carbon nanotubes nanocomposites using a previously developed home-made tomography device, and the volume is well reconstructed. When performing tomography on latex suspension, limitations are found on the temperature control of samples. We propose an optimization of the device with new observations conditions to better control water evaporation and condensation of liquid samples. Afterwards, a full 3D analysis on SBA-PMMA latex from dilute suspension to very concentrated one is performed, and a further study is presented in presence of a surfactant. The encouraging reconstruction results are used to model the particles arrangement. This shows the potentialities of wet-STEM tomography for the characterization of both solid and liquid nano-materials.

Au début du XXIème siècle, la Microscopie Electronique à Transmission en mode Environnemental (ETEM) est devenue l’une des techniques les plus fiables de caractérisation de nanomatériaux dans des conditions simulant leur vie réelle. L’ETEM est maintenant en mesure de suivre l’évolution dynamique des nanomatériaux dans des conditions variables comme l’exposition à des températures élevées, l’observation en milieux liquide ou gazeux à diverses pressions. Parmi différents domaines de recherche et développement concernés, la catalyse peut bénéficier de manière significative des avancées permises par la microscopie électronique environnementale. Cette thèse, dédiée au développement de l’ETEM au laboratoire MATEIS, a commencé avec l’étude du système catalytique Pd-alumine. Les nanoparticules de Pd déposées sur alpha -Al2O3 et delta-Al2O3 sont très utilisées en physicochimie avec un impact environnemental important : en particulier dans le domaine de l’hydrogénation sélective, pour la synthèse de polymères ou l’hydrogénation de CO2 pour la production de méthane. Nous avons tout d’abord effectué des analyses 2D aux différentes étapes du processus de synthèse du catalyseur : imprégnation du précurseur, séchage et chauffage pour la calcination dans l’air à la pression atmosphérique. La motivation de cette approche a été de comparer des analyses post mortem avec des traitements en ETEM où l’évolution des nanoparticules peut être mesurée in situ et pas seulement « avant » et « après ». De manière générale, les études faites en ETEM en 2D donnent un aperçu limité sur la morphologie des objets et la distribution spatiale des nanoparticules supportées. Nous avons développé une nouvelle approche d’acquisition rapide pour collecter dans des temps très courts des séries d’images sous différents angles de vue pour la tomographie électronique, la rapidité de cette acquisition étant un prérequis pour appréhender correctement la morphologie d’un nano-système au cours de son évolution dynamique in situ. La technique a ensuite été utilisée pour l’étude de plusieurs systèmes où une acquisition tridimensionnelle rapide est indispensable, notamment sur un sujet concernant un enjeu sociétal important, la dépollution des moteurs diesel : l’oxydation de la suie a été étudiée in situ sur des supports à base de zircone entre 400 et 600°C et une pression de 2 mbar d’oxygène à différents degrés de combustion, ce qui a permis d’extraire des données cinétiques telle que l’énergie d’activation du processus. La tomographie électronique rapide a été également appliquée à des matériaux sensibles au faisceau électronique, comme des nanocomposites polymères et des objets biologiques, montrant le large spectre d’applications possibles pour cette technique, qui constitue un pas important vers la caractérisation operando 3D de nanomatériaux en temps réel. / In the beginning of the XXIst century, Environmental Transmission Electron Microscopy has become one of the reliable characterization techniques of nanomaterials in conditions mimicking their real life. ETEM is now able to follow the dynamic evolution of nanomaterials under various conditions like high temperature, liquid or various gas pressures. Among various fields of research, catalysis can benefit significantly from Environmental Microscopy. This contribution starts with the study of the Palladium-Alumina catalytic system. Pd nanoparticles supported by α-Al2O3 and δ-Al2O3 are of an important physicochemical and environmental interest, particularly in the field of selective hydrogenation in petrochemistry, for the synthesis of polymers or CO2 hydrogenation for methane production. We first performed 2D analyses at different steps of the synthesis process, then the same synthesis steps were performed under in situ conditions. The motivation of this approach was to compare post mortem treatments with ETEM observations. In general, 2D data provide limited insights on, for example, the morphology and position of supported nanoparticles. We have then developed a new fast acquisition approach to collect tomographic tilt series in very short times, enabling to reconstruct nano-systems in 3D during their dynamical evolution. Taking advantage of this approach, we have determined the activation energy for soot combustion on YSZ oxidation catalysts for diesel motors from volumetric data extracted from in situ experiments. Fast electron tomography was also applied to electron beam sensitive materials, like polymer nanocomposites and biological materials, showing the wide spectrum of possible applications for rapid 3D characterization of nanomaterials.

No description available.

Indium phosphide (InP) is an important III-V compound, with a variety of applications, for example, in light emitting diodes (LED), InP based photonic crystals and in semiconductor lasers, heterojunction bipolar transistors in integrated circuit applications and in transistors for microwave and millimeter-wave systems. The optical and electrical properties of this compound can be further tailored by ion implantation or prospectively by swift heavy ion beams. ¶ Thus knowledge of ion-induced disorder in this material is of important fundamental and practical interest. However, the disorder produced during heavy ion irradiation and the subsequent damage accumulation and recovery in InP is far from being completely understood. In terms of the damage accumulation mechanisms, the conclusions drawn in the numerous studies performed have often been in conflict with one another. A factor contributing to the uncertainties associated with these conflicting results is a lack of information and direct observation of the “building blocks” leading to the ultimate damage created at high ion fluences as an amorphous layer. These building blocks formed at lower fluence regimes by single ion impacts can be directly observed as isolated disordered zones and ion tracks for low energy and swift heavy ion irradiation, respectively. ¶ The primary aim of this work has thus been to obtain a better understanding of the disorder in this material through direct observations and investigation of disorder produced by individual heavy ions in both energy regimes (i.e. elastic and inelastic energy deposition regimes) especially with low ion fluence irradiations. In this thesis the heavy ion induced disorder introduced by low energy Au ions (100 keV Au+) and high energy Au (200 MeV Au+16) ion irradiation in InP were investigated using Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS/C) and Atomic Force Microscopy (AFM). ¶ The accumulation of damage due to disordered zones and ion tracks is described and discussed for both low energy and swift ion irradiation respectively. ¶ The in-situ TEM annealing of disordered zones created by 100 keV Au+ ion irradiation shows that these zones are sensitive to electron beam irradiation and anneal under electron energies not sufficient to elastically displace lattice atoms, i.e. subthreshold energies for both constituent atoms In and P. ¶ Ion tracks due to swift heavy ion irradiation were observed in this material and the interesting track morphology was described and discussed. The surface nanotopographical changes due to increasing fluence of swift heavy ions were observed by AFM where the onset of large increase in surface roughness for fluences sufficient to cause complete surface amorphization was observed. ¶ In addition to InP, the principle material of this project, a limited amount of TEM observation work has been performed on several other important compounds (apatite and monazite) irradiated by 200 MeV Au+ ions for comparative purposes. Again the observed segmental morphology of ion tracks were shown and possible track formation scenario and structure were discussed and similarities were drawn to the previously observed C60 cluster ion tracks in CaF2 as more knowledge and data base exist about defect dynamics and formation in that material.

Materials in smaller scales exhibit promising properties that are useful for wide variety of applications. Semiconductor quantum wells and quantum dots are two main examples of low-dimensional systems, where the quantum wells act as two-dimensional systems and the quantum dots act as zero-dimensional systems. Alternatively, semiconductor nanowires act as one-dimensional materials, and they exhibit promising and device applicable properties. These nanowires are relatively new class of materials compared to the quantum wells and the quantum dots. The semiconductor nanowires are expected to be the building blocks for future nanoelectronic and nano-optoelectronic device technology. Vapor-liquid-solid (VLS) mechanism is a widely used mechanism for the growth of semiconductor nanowires, where metal nanoparticles are used as the catalysts for the nanowires growth. This growth mechanism offers a flexibility to control the size, morphology and location of the semiconductor nanowires. In the VLS growth, changing the chemical composition of vapor constituents produce consequent compositional modulation in each nanowire. The compositional modulation along the nanowire axis produces axial nanowire heterostructures and in radial direction produces radial nanowire heterostructures. Such compositional modulation within an individual nanowire enables the designing of band structure of a nanowire and thereby allows the fabrication of single nanowire devices. These nanowire heterostructures show many potential properties and consequent applications. Although the semiconductor nanowire heterostructures are promising semiconductor nanostructures, the fundamental growth mechanisms of axial and radial nanowire heterostructures have not been explored sufficiently due to their complex nature of the growth. In this regard, this PhD thesis addresses the fundamental issues associated with axial and radial nanowire heterostructures. For such fundamental investigations, this PhD work chooses InAs/GaAs nanowire heterostructure system due to its potential applications. In fact, InAs/GaAs nanowire heterostructures are the first reported axial nanowire heterostructure system. However, no detailed investigations were reported on this system so far. The detailed nucleation and growth mechanisms associated with InAs/GaAs nanowire heterostructure system are explored in this thesis using electron microscopy investigations. This objective is achieved in the following steps. • InAs/GaAs nanowire heterostructures are grown using Au nanoparticles and metal-organic chemical vapor deposition (MOCVD) method. To determine the axial and radial growth evolution of InAs on GaAs nanowires, different InAs/GaAs nanowire heterostructures are produced by depositing InAs for different durations on GaAs nanowires. The GaAs nanowires are initially grown for 30 min and then the InAs is deposited on these nanowires for 1, 3, 5 and 30 min. • These InAs/GaAs nanowire heterostructures are subjected to scanning electron microscopy (SEM) and transmission electron microscopy (TEM) investigations. These investigations determine that, in the initial stages of the InAs axial growth (1 min), the Au particles move sidewards and subsequently downwards by maintaining an interface with the GaAs nanowire. Such a movement of Au catalysts is attributed to lower Au/GaAs interfacial energy than Au/InAs. The detailed TEM investigations show that this Au movement depends upon the crystallographic nature of the GaAs nanowire. The Au particle is always tend to move towards {112}B sidewall of the GaAs nanowire rather than its {112}A sidewalls. Increase in InAs growth duration shows that InAs branches evolve from GaAs-InAs core-shell structures. Such evolution is observed in following steps: (1) the movement of Au particle terminates when it encounters the radially grown InAs on GaAs nanowires; (2) further growth of InAs leads to the InAs nanowire growth from those terminated Au nanoparticles in the form of branches. • The TEM observations of InAs/GaAs nanowire heterostructures show that, in the initial stages of InAs radial growth on GaAs nanowires, InAs nucleates preferentially in the concave regions of the non-planar sidewalls of the GaAs nanowire. The further growth of InAs leads to the preferential formation of InAs shell structure at the regions of concave regions. Such heterogeneous formation of shell structure resembles InAs nanoring structures around GaAs nanowire cores. InAs growth on the planar {112} sidewalls of GaAs nanowires with hexagonal cross sections shows different growth phenomena to the above described InAs nanorings formation. In this case, InAs preferentially nucleates on {112}A sidewalls of the GaAs nanowires and with further deposition of InAs, the complete shell structure of InAs form with {110} sidewalls on the GaAs nanowire cores. • In addition to the above mentioned investigations, to observe the growth evolution of GaAs on InAs nanowires, GaAs is grown for 3 and 30 min on InAs nanowires. The TEM investigations of these nanostructures show that the axial GaAs/InAs hetero-interface contains an InGaAs transition segment in contrast to the sharp InAs/GaAs (InAs on GaAs) hetero-interface. The different nature of hetero-interfaces is attributed to the different affinities between Au catalysts and Ga or In. The radial growth of GaAs on InAs nanowires show that the GaAs shell has grown in wurtzite structure around the wurtzite structured InAs nanowire cores. Overall, through the extensive SEM and TEM investigations, this PhD thesis addresses the fundamental issues related to the growth of axial and radial nanowire heterostructures. Such fundamental investigations are expected to advance the processing and application prospective of the semiconductor nanowires and their associated heterostructures.