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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
101

MBE-grown Fe ferromagnetic quantum dots /

So, Tak Ki. January 2003 (has links)
Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references (leaves 61-62). Also available in electronic version. Access restricted to campus users.
102

Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy

Brown, Terence D. January 2003 (has links) (PDF)
Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004. / May, Gary, Committee Chair; Doolittle, William, Committee Member; Brown, April, Committee Member; Wang, Zhong Lin, Committee Member; Ralph, Stephen, Committee Member. Includes bibliography.
103

Heteroepitaxial growth of InN on GaN by molecular beam epitaxy /

Ng, Yee-fai. January 2002 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2002. / Includes bibliographical references (leaves 102-106).
104

Growing of GaN on vicinal SiC surface by molecular beam epitaxy /

Cheung, Sau-ha. January 2002 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2002. / Includes bibliographical references (leaves 68-71).
105

Molecular beam epitaxial growth of GaN on Si(111) substrate

Xu, Zhongjie, 徐忠杰 January 2010 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
106

Growth of Bi2Se3 on Si substrate by molecular beam epitaxy

Kan, Xin., 阚欣. January 2011 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
107

Growth of niobium oxide thin films by molecular beam epitaxy

Hadamek, Tobias 16 February 2015 (has links)
For this thesis niobium oxides (NbO [subscript x]) with the goal of obtaining phase pure epitaxial NbO₂ were grown under variable conditions by molecular beam epitaxy (MBE) on different substrates, mostly (111) oriented strontium titanate. The films were characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) and from that their epitaxial relationship to the substrate was determined. With X-ray photoelectron spectroscopy (XPS) the oxidation states and stoichiometry of the films were determined. Asymmetric NbO₂ Nb 3d core-level spectra are clearly seen for the first time in XPS. Additionally, the film thickness was measured by X-ray reflectivity (XRR). Judging from the XPS spectra and diffraction data the goal to grow epitaxial NbO₂ of high phase-purity was achieved. / text
108

Epitaxial regrowth based fabrication process for vertical cavity lasers

Gazula, Deepa 28 August 2008 (has links)
Not available / text
109

Molecular-beam epitaxial growth of low-dark-current avalanche photodiodes

Hurst, Jeffrey Byron, 1977- 29 August 2008 (has links)
The quaternary material system In[subscript x]Ga[subscript 1-x]As[subscript y]P[subscript 1-y] is an important material system for optoelectronic devices, specifically covering optimum fiber optic wavelengths. Among the limitations of using this material system concerning photodetector performance is generation of carriers due to material defects and impurities. This dissertation reports on the growth optimization of InGaAs using molecular-beam epitaxy for low-dark-current avalanche photodiodes through the study of the effects of the growth conditions on dark current. An optimum growth temperature of 545°C and arsenic beam equivalent pressure of 2x10⁻⁵ Torr was found for producing the lowest dark current density. Avalanche photodiodes were implemented with a dark current density 80 mA/cm² at 90% of the breakdown voltage.
110

Pattern formation and evolution in thin polymer films

Masson, Jean-Loup Didier 28 March 2011 (has links)
Not available / text

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