Thesis advisor: Ilija Zeljkovic / The discovery of topological phases has ushered in an era of new materials with exotic electronicproperties; one particular area of excitement is realizing and studying topologically superconducting systems. These topological superconductors are theorized to host exotic excitations that can be applied towards making fault tolerant quantum computations. One way to achieve this is depositing thin films of topological insulators onto superconducting substrates. Molecular beam epitaxy offers precise control for fabricating thin film heterostructures down to the single layer limits. In this thesis I will present my work on the synthesis of thin film topological insulators grown epitaxially on both an iron based superconductor FeT e0.55Se0.45 as well as a cuprate superconductor Bi2Sr2CaCu2Ox+8. Additionally I will cover the scanning tunneling microscopy/spectroscopy characterization of the emergent phenomena on the surface as well as at the interface of these heterostructures. This work presents a viable platform for exploring the emergence of superconductivity in topologically insulating materials, as well as demonstrates the importance of a clean interface. / Thesis (PhD) — Boston College, 2022. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.

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Thesis (M.S.)--University of Texas at El Paso, 2008. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

published_or_final_version / Industrial and Manufacturing Systems Engineering / Master / Master of Philosophy

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by Won Hon Kit. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1997. / Includes bibliographical references (leaves 66-70). / by Won Hon Kit. / Acknowledgment --- p.i / Abstract --- p.ii / Chapter Chapter1 --- Introduction --- p.1 / Chapter 1.1 --- Uniqueness of ZnxCd/1-x Se --- p.1 / Chapter 1.2 --- The Choice of OMVPE --- p.1 / Chapter 1.3 --- Epilayer Relaxation in Heteroepitaxy --- p.2 / Chapter 1.4 --- The Most Suitable Substrate --- p.4 / Chapter Chapter2 --- Experimental Procedures --- p.6 / Chapter 2.1 --- Degreasing and Etching --- p.6 / Chapter 2.2 --- Preheating --- p.6 / Chapter 2.3 --- OMVPE Growth --- p.6 / Chapter Chapter3 --- Characterization --- p.9 / Chapter 3.1 --- X-ray Diffraction --- p.9 / Chapter 3.2 --- EDX Spectroscopy --- p.13 / Chapter 3.3 --- Optical Reflectance --- p.15 / Chapter Chapter4 --- Data Analysis --- p.20 / Chapter 4.1 --- Control of Composition --- p.20 / Chapter 4.2 --- Structural Quality and Epilayer Relaxation --- p.22 / Chapter 4.3 --- Critical Point Energies --- p.24 / Chapter 4.4 --- Refractive Index and Extinction coefficient --- p.26 / Chapter Chapter5 --- Conclusions --- p.28 / List of Figures --- p.30 / Reference --- p.66

by Lee Wai Lok. / x and 1-x are in title are subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves [67]-[70]). / by Lee Wai Lok. / Abstract --- p.i / Chapter Chapter1 --- Introduction --- p.1-1 / Chapter 1.1 --- Epitaxial Growth --- p.1-2 / Chapter 1.1.1 --- Background of Epitaxy --- p.1-2 / Chapter 1.1.2 --- Operating Principle of OMVPE --- p.1-2 / Chapter 1.1.3 --- Problems in Heteroepitaxy --- p.1-3 / Chapter 1.2 --- Basic Requirements of a Semiconductor Laser --- p.1-3 / Chapter 1.3 --- Our work --- p.1-4 / Chapter Chapter2 --- OMVPE Growth --- p.2-1 / Chapter 2.1 --- Our OMVPE System Design --- p.2-1 / Chapter 2.1.1 --- Growth Environment --- p.2-2 / Chapter 2.1.2 --- Susceptor Temperature Control --- p.2-2 / Chapter 2.1.3 --- Reactor Pressure Control --- p.2-2 / Chapter 2.1.4 --- MO Vapor Handling Control --- p.2-2 / Chapter 2.1.4.1 --- MO Flow Control --- p.2-3 / Chapter 2.1.4.2 --- Flow Path Selection --- p.2-3 / Chapter 2.1.5 --- Cabinet with Air Extraction --- p.2-3 / Chapter 2.1.6 --- Chemical Scrubber --- p.2-4 / Chapter 2.2 --- System Calibration --- p.2-4 / Chapter 2.3 --- Materials Used --- p.2-5 / Chapter 2.3.1 --- Precursor Materials --- p.2-5 / Chapter 2.3.2 --- Hydrogen Gas --- p.2-5 / Chapter 2.3.3 --- Nitrogen Gas --- p.2-6 / Chapter 2.3.4 --- Substrate --- p.2-6 / Chapter 2.4 --- Fabrication Conditions --- p.2-6 / Chapter Chapter3 --- Characterization --- p.3-1 / Chapter 3.1 --- X-ray Diffraction --- p.3-1 / Chapter 3.2 --- EDX Spectroscopy --- p.3-2 / Chapter 3.3 --- Optical Reflectance --- p.3-4 / Chapter Chapter4 --- Data Analysis --- p.4-1 / Chapter 4.1 --- ZnSe/GaAs(100) --- p.4-1 / Chapter 4.1.1 --- Structural Analysis --- p.4-1 / Chapter 4.1.2 --- Stoichiometry --- p.4-2 / Chapter 4.1.3 --- Growth Rate --- p.4-3 / Chapter 4.1.4 --- Energies of Critical Points --- p.4-3 / Chapter 4.1.5 --- Reflectance --- p.4-4 / Chapter 4.2 --- ZnCdSe/InP(100) --- p.4-5 / Chapter 4.2.1 --- Structural Analysis --- p.4-5 / Chapter 4.2.1.1 --- Structural Quality --- p.4-5 / Chapter 4.2.1.2 --- Crystal Structure --- p.4-5 / Chapter 4.2.1.3 --- Lattice Parameter --- p.4-8 / Chapter 4.2.2 --- Composition Range --- p.4-8 / Chapter 4.2.3 --- Degree of Relaxation --- p.4-9 / Chapter 4.2.4 --- Comparison to Prior Art --- p.4-10 / Chapter 4.2.5 --- Growth Rate --- p.4-11 / Chapter 4.2.6 --- Energies of Critical Points --- p.4-12 / Chapter Chapter5 --- Conclusions --- p.5-1 / Appendix A Calculation of the actual MO Mass Flow --- p.6-1 / Appendix B Interpretation of in-plane Lattice Parameter --- p.6-3 / Appendix C Structure Factor of Wurtzite Lattice --- p.6-4 / References --- p.7-1

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