Interaction designers for mobile phones mainly focus on displays but have only little knowledge about sensor characteristics. Beside multitouch input, mobile devices provide versatile possibilities to interact in a physical, device-based manner due to their built-in hardware. Even though such interactions may provide many advantages in everyday life, they have limited visibility in interaction design. Interaction designers are seldom experts in gesture and pattern recognition and even prototypical implementations of simple mobile-based interactions need advanced technical knowledge. Hence, the potential for designing mobile device-based interactions is often not fully exploited. To contribute to a common knowledge of mobile device-based interactions, this paper proposes Mobile Spaces. This model aims at supporting designers of mobile applications to broaden their view on interaction possibilities with one or more collocated devices which go beyond the screen. We discuss the applicability of Mobile Spaces by means of several examples from research.

Beside traditional multitouch input, mobile devices provide various possibilities to interact in a physical, device-based manner due to their built-in hardware. Applying such interaction techniques allows for sharing content easily, e.g. by literally pouring content from one device into another, or accessing device functions quickly, e.g. by facing down the device to mute incoming calls. So-called mobile-based interaction techniques are characterized by movements and concrete positions in real spaces. Even though such interactions may provide many advantages in everyday life, they have limited visibility in interaction design due to the complexity of sensor processing. Hence, mobile-based interactions are often integrated, if any, at late design stages. To support testing interactive ideas in early design stages, we propose MilkyWay, a toolbox for prototyping collocated collaborative mobile-based interaction techniques. MilkyWay includes an API and a mobile application. It enables easily building up mobile interactive spaces between multiple collocated devices as well as prototyping interactions based on device sensors by a programming-by-demonstration approach. Appropriate sensors are selected and combined automatically to increase tool support. We demonstrate our approach using a proof of concept implementation of a collaborative Business Model Canvas (BMC) application.

Silicon Nanowire (SiNW) based reconfigurable fieldeffect transistors (RFETs) provide an additional gate terminal called the program gate which gives the freedom of programming p-type or n-type functionality for the same device at runtime. This enables the circuit designers to pack more functionality per computational unit. This saves processing costs as only one device type is required, and no doping and associated lithography steps are needed for this technology. In this paper, we present a complete design flow including both logic and physical synthesis for circuits based on SiNW RFETs. We propose layouts of logic gates, Liberty and LEF (Library Exchange Format) files to enable further research in the domain of these novel, functionally enhanced transistors. We show that in the first of its kind comparison, for these fully symmetrical reconfigurable transistors, the area after placement and routing for SiNW based circuits is 17% more than that of CMOS for MCNC benchmarks. Further, we discuss areas of improvement for obtaining better area results from the SiNW based RFETs from a fabrication and technology point of view. The future use of self-aligned techniques to structure two independent gates within a smaller pitch holds the promise of substantial area reduction.

CuI is a p-type transparent conductive semiconductor with unique optoelectronic properties, including wide band gap (3.1 eV), high hole mobility (>40 cm2 V−1 s−1 in bulk), and large room-temperature exciton binding energy (62 meV). The difficulty in epitaxy of CuI is the main obstacle for its application in advanced solid-state electronic devices. Herein, room-temperature heteroepitaxial growth of CuI on various substrates with well-defined in-plane epitaxial relations is realized by reactive sputtering technique. In such heteroepitaxial growth the formation of rotation domains is observed and hereby systematically investigated in accordance with existing theoretical study of domain-epitaxy. The controllable epitaxy of CuI thin films allows for the combination of p-type CuI with suitable n-type semiconductors with the purpose to fabricate epitaxial thin film heterojunctions. Such heterostructures have superior properties to structures without or with weakly ordered in-plane orientation. The obtained epitaxial thin film heterojunction of p-CuI(111)/n-ZnO(00.1) exhibits a high rectification up to 2 × 109 (±2 V), a 100-fold improvement compared to diodes with disordered interfaces. Also a low saturation current density down to 5 × 10−9 Acm−2 is formed. These results prove the great potential of epitaxial CuI as a promising p-type optoelectronic material.

Dihydro-1,2,4,5-tetrazine-3,6-dicarboxylate was introduced into the chemically stable UiO-66 structure by a postsynthetic linker exchange reaction to create an optical sensor material for the detection of oxidative agents such as nitrous gases. The incorporated tetrazine unit can be reversibly oxidized and reduced, which is accompanied by a drastic colour change from yellow to pink and vice versa. The high stability of the framework during redox reaction was proven by powder X-ray diffraction and nitrogen physisorption measurements.

The rise of NVRAM technologies promises to change the way we think about system architectures. In order to fully exploit its advantages, it is required to develop systems specially tailored for NVRAM devices. Not only this imposes great challenges, but developing full system architectures from scratch is undesirable in many scenarios due to prohibitive development costs. Instead, we analyze in this paper the behavior of an existing log-structured persistent key-value store, namely LevelDB, when run on top of an emulated NVRAM device. We investigate initial opportunities for improvement when adapting a system tailored for HDD/SSDs to run on top of an NVRAM environment. Furthermore, we analyze the behavior of the legacy DRAM caching component of LevelDB and whether more suitable caching policies are required.

No description available.

The full complex, spatial modulation of light at high frame rates is essential for a variety of applications. In particular, emerging techniques applied to scattering media, such as Digital Optical Phase Conjugation and Wavefront Shaping, request challenging performance parameters. They refer to imaging tasks inside biological media, whose characteristics concerning the transmission and reflection of scattered light may change over time within milliseconds. Thus, these methods call for frame rates in the kilohertz range. Existing solutions typically offer frame rate capabilities below 100 Hz, since they rely on liquid crystal spatial light modulators (SLMs). We propose a diffractive MEMS optical system for this application range. It relies on an analog, tilt-type micro mirror array (MMA) based on an established SLM technology, where the standard application is grayscale amplitude control. The new MMA system design allows the phase manipulation at high-speed as well. The article studies properties of the appropriate optical setup by simulating the propagation of the light. Relevant test patterns and sensitivity parameters of the system will be analyzed. Our results illustrate the main opportunities of the concept with particular focus on the tilt mirror technology. They indicate a promising path to realize the complex light modulation at frame rates above 1 kHz and resolutions well beyond 10,000 complex pixels.

In dem Vortrag wird die Entwicklung einer Finiten-Elemente-App für Android dargelegt, sowie die Vorteile im Postprozessing von einfachen Strukturen bei der Verwendung der Gestensteuerung erörtert.

This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices and mainly the SiC-MOSFET. The designed inverter offers a possibility to drive the power inverter with a very high efficiency, which can reach up to 99% for 16 kW rated power. The design is dedicated to the electric vehicle application, and it aims at • Providing a comparative study on some of the current discrete SiC devices in terms of the total losses and the thermal conductivity. In addition, a behavioral study of the effective channel mobility with temperature variation in the SiC MOSFET will be investigated. • Designing a gate driver which fits with the driving requirements of the SiC-MOSFET and provides a trade-off between the switching losses and the EMI behavior. • Designing a three-phase voltage source inverter with 16 kW rated power; the design includes minimizing the inverter losses and extracts the EMI model of the power inverter by considering the effects of the parasitic parameters; moreover a short guideline for selecting the heat-sink based on the static network is introduced. • Proposing a new and simplified carried-based PWM, this will reduce the harmonics in the output waveforms and enhance the utilization of the DC-link voltage. • Proposing a new strategy for compensating the dead-time effect in carrier based-PWM and to find out the proper dead-time level in VSI based on SiC –MOSFET. • Designing faults diagnosis and protection circuits in order to protect the power inverter from the common faults; overcurrent, short-circuit, overvoltage, and overtemperature faults.