Photodetectors are essential in optoelectronics as they allow the conversion of optical signals into electrical outputs. Silicon, germanium and III-V semiconductors currently dominate the photodetector market. In this dissertation I exploit the potential of layered materials to demonstrate a class of photodetectors able to challenge existing technological issues. I first demonstrate a fabrication method for high-mobility, chemical-vapour-deposited graphene devices which could help to increase the responsivity in graphene-based photodetectors. I then show three examples of graphene-based Schottky photodetectors working at the telecommunication wavelength $\lambda$=1550nm, two for free-space illumination and one for on-chip applications. These are able to achieve responsivities up to 1A/W with relatively-low operation voltage (-3V), similar to those achieved with germanium. I then target the mid-infrared range ($\lambda\sim$10$\mu$m), where emission from objects at room temperature has a peak. I show graphene-based pyroelectric bolometers with temperature coefficient of resistance up to 900\%/K, two orders of magnitude higher compared to current solutions based on thin oxide membranes. I present flexible photodetectors working in the visible range ($\lambda$=642nm) with gate-tunable graphene/MoS$_2$ heterostructures and show responsivity up to 45A/W, 82\% transparency, and low voltage operation (-1V). The responsivity is two orders of magnitude higher compared to semiconducting flexible membranes. Graphene/MoS$_2$ photodetectors can be bent without loss in performance down to a bending radius of 1.4cm. I finally report on the investigation of superconducting properties of layered materials with the target of realizing ultra-sensitive superconducting photodetectors. Unconventional superconductivity is induced in graphene by proximity with a cuprate superconductor. I used gating to turn semiconducting, few-layer MoS$_2$ into a superconductor, which allowed us to unveil the presence of a multi-valley transport in the superconducting state. Electrical properties of the layered superconductor NbSe$_2$ are then studied. I then used NbSe$_2$ ultrathin flakes to realize superconducting photodetectors at $\lambda$=1550nm, reaching a sensitivity down to few thousand photons.

This thesis presents the development of integrated silicon photonic devices. These devices are compatible with the present and near future CMOS technology. High-khorizontal grating couplers and waveguides are proposed. This work consists of simulations and device design, as well as the layout for the fabrication process, device fabrication, process development, characterization instrument development and electro-optical characterizations. The work demonstrates an alternative solution to costly silicon-on-insulator photonics. The proposed solution uses bulk silicon wafers and thin film deposited waveguides. Back-end deposited horizontal slot grating couplers and waveguides are realized by multi-layers of amorphous silicon and high-k materials. The achievements of this work include: A theoretical study of fully etched slot grating couplers with Al2O3, HfO2 and AIN, an optical study of the high-k films with spectroscopic ellipsometry, an experimental demonstration of fully etched SiO2 single slot grating couplers and double slot Al2O3 grating couplers, a practical demonstration of horizontal double slot high-k waveguides, partially etched Al2O3 single slot grating couplers, a study of a scheme for integration of the double slot Al2O3  waveguides with selectively grown germanium PIN photodetectors, realization of test chips for the integrated germanium photodetectors, and study of integration with graphene photodetectors through embedding the graphene into a high-k slot layer. From an application point of view, these high-k slot waveguides add more functionality to the current silicon photonics. The presented devices can be used for low cost photonics applications. Also alternative optical materials can be used in the context of this photonics platform. With the robust design, the grating couplers result in improved yield and a more cost effective solution is realized for integration of the waveguides with the germanium and graphene photodetectors. / <p>QC 20141114</p>