Thesis (M.S.)--University of Texas at El Paso, 2009. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references. Also available in electronic version. Access restricted to campus users.

Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1994. / Vita. Abstract. Includes bibliographical references (leaves 68-70). Also available via the Internet.

Thesis (M.S.) in Electrical Engineering--University of Maine, 2003. / Includes vita. Includes bibliographical references (leaves 55-57).

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Wang Xiaofeng = Hf基高K介电薄膜的微观结构和电子结构研究 / 王晓峰. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references (leaves 62-67). / Text in English; abstracts in English and Chinese. / Wang Xiaofeng = Hf ji gao K jie dian bo mo de wei guan jie gou he dian zi jie gou yan jiu / Wang Xiaofeng. / Table of Contents --- p.iv / List of Figures --- p.vii / List of Tables --- p.x / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Background --- p.3 / Chapter 2.1 --- Ideal high-k materials --- p.3 / Chapter 2.1.1 --- Current problems with Si02 and possible solutions --- p.3 / Chapter 2.1.2 --- Requirements on the high-k gate dielectric materials --- p.6 / Chapter 2.2 --- Recent results on high-k gate dielectrics --- p.8 / Chapter 2.2.1 --- A1203 --- p.8 / Chapter 2.2.2 --- Y203 and La203 --- p.9 / Chapter 2.2.3 --- Hf02 and Zr02 --- p.10 / Chapter 2.2.4 --- Pseudo-binary Alloys --- p.10 / Chapter 3 --- Experimental and Instrumentation --- p.13 / Chapter 3.1 --- Transmission electron microscopy (TEM) --- p.13 / Chapter 3.2 --- Transmission electron diffraction (TED) --- p.15 / Chapter 3.3 --- Electron energy loss spectroscopy (EELS) --- p.16 / Chapter 4 --- Data Analysis Methodology --- p.22 / Chapter 4.1 --- Diffraction analysis --- p.22 / Chapter 4.1.1 --- Ring ratio analysis for polycrystal diffraction pattern --- p.23 / Chapter 4.1.2 --- RDF analysis for amorphous materials --- p.24 / Chapter 4.2 --- Eliminating the plural scattering in EELS --- p.29 / Chapter 4.2.1 --- Removal of plural scattering from inner-shell edges --- p.30 / Chapter 4.2.2 --- Fourier-Ratio deconvolution --- p.30 / Chapter 4.2.3 --- "Demonstration using Co L2,3 core-loss spectrum" --- p.31 / Chapter 5 --- The Temperature Effect on the Microstructure of HfO2 Films --- p.37 / Chapter 5.1 --- Experimental --- p.38 / Chapter 5.2 --- Phase identification and crystallinity analysis of the Hf02 thin films --- p.38 / Chapter 5.2.1 --- Phase and crystallinity analysis from TEDs --- p.38 / Chapter 5.2.2 --- The phase and crystallinity evolution with the growth temperature --- p.39 / Chapter 5.3 --- The local symmetry of Hf atom in the films --- p.40 / Chapter 6 --- Effect of A1 Addition on the Microstructure and Electronic Structure of HfO2 Films --- p.43 / Chapter 6.1 --- Experimental --- p.44 / Chapter 6.2 --- RDF analysis of HfAlO films --- p.45 / Chapter 6.3 --- The local symmetry of Hf atom in the HfAlO films --- p.46 / Chapter 6.4 --- Loss functions of HfAlO films --- p.48 / Chapter 7 --- Comparison of A1 and Y Addition on the Microstructure of Hf02 Films --- p.56 / Chapter 7.1 --- Experimental --- p.57 / Chapter 7.2 --- Phase identification and crystallinity analysis of the alloy thin films --- p.57 / Chapter 7.2.1 --- Phase and crystallinity analysis from TEDs --- p.57 / Chapter 7.2.2 --- The phase and crystallinity evolution with the Y and A1 incorporation --- p.58 / Chapter 7.3 --- The local symmetry of Hf atom in the alloy thin films --- p.59 / Chapter 8 --- Conclusion --- p.61 / Bibliography --- p.62

Wang Lei. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / List of Figures --- p.vi / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Scaling issues of Metal-Oxide-Semiconductor field effect transistor --- p.1 / Chapter 1.2 --- Alternative high-k gate dielectrics --- p.4 / Chapter 1.3 --- Overview of this thesis --- p.9 / References --- p.10 / Chapter Chapter 2 --- Deposition and characterization techniques for ultrathin HfO2 films --- p.11 / Chapter 2.1 --- Introduction --- p.11 / Chapter 2.2 --- Ultrathin Hf02 Films Growth and Post Deposition Modification --- p.11 / Chapter 2.2.1 --- Ultrahigh Vacuum Electron-beam Evaporation --- p.11 / Chapter 2.2.2 --- High Concentration Ozone Annealing --- p.12 / Chapter 2.2.3 --- Plasma Immersion Ion Implantation --- p.14 / Chapter 2.2.4 --- Rapid Thermal Annealing --- p.16 / Chapter 2.3 --- Compositional Characterization Techniques --- p.17 / Chapter 2.3.1 --- X-ray Photoelectron Spectroscopy --- p.17 / Chapter 2.3.2 --- Rutherford Backscattering Spectrometry --- p.18 / Chapter 2.4 --- Structural and Surface Morphological Characterization Techniques --- p.19 / Chapter 2.4.1 --- High-Resolution Transmission Electron Microscopy --- p.19 / Chapter 2.4.2 --- Ultrahigh Vacuum Scanning Tunneling Microscopy --- p.20 / Chapter 2.4.3 --- Ultrahigh Vacuum Atomic Force Microscopy --- p.22 / Chapter 2.5 --- Electrical Characterization --- p.24 / Chapter 2.5.1 --- Capacitance-voltage (C-V) Measurement --- p.24 / Chapter 2.5.2 --- Current-voltage (I-V) Measurement --- p.25 / References --- p.26 / Chapter Chapter 3 --- Control of interfacial silicate between Hf and SiO2 by high concentration ozone --- p.27 / Chapter 3.1 --- Introduction --- p.27 / Chapter 3.2 --- Experimental procedure --- p.28 / Chapter 3.3 --- Results and discussion --- p.29 / Chapter 3.4 --- Conclusion --- p.35 / References --- p.36 / Chapter Chapter 4 --- Electrical characteristics of postdepositon annealed ultrathin Hf02 films --- p.37 / Chapter 4.1 --- Introduction --- p.37 / Chapter 4.2 --- Capacitance of gate stack in metal-insulator-semiconductor structure --- p.38 / Chapter 4.3 --- Electrical characteristics of ultrathin HfO2 films by high temperature Ozone oxidation --- p.39 / Chapter 4.4 --- Electrical and structural properties of ultrathin HfO2 films by high temperature rapid thermal annealing --- p.46 / Chapter 4.5 --- Conclusion --- p.48 / References --- p.50 / Chapter Chapter 5 --- Effect of nitrogen incorporation on thermal stability of ultrathin Hf02 films --- p.51 / Chapter 5.1 --- Introduction --- p.51 / Chapter 5.2 --- Experimental procedure --- p.52 / Chapter 5.3 --- Results and discussion --- p.52 / Chapter 5.4 --- Conclusion --- p.58 / References --- p.59 / Chapter Chapter 6 --- Local characterization of ultrathin HfO2 films by in-situ Ultrahigh Vacuum Scanning Probe Microscopy --- p.61 / Chapter 6.1 --- Introduction --- p.61 / Chapter 6.2 --- Experimental procedure --- p.62 / Chapter 6.3 --- Morphology and structure of initial growth of HfO2 --- p.63 / Chapter 6.4 --- Local characterization of ultrathin HfO2 films by in-situ UHV-STM --- p.66 / Chapter 6.5 --- UHV c-AFM study of leakage path evolution in ultrathin Hf02 films --- p.71 / Chapter 6.6 --- Conclusion --- p.72 / References --- p.73 / Chapter Chapter 7 --- Conclusion --- p.74 / Publications --- p.76

Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor (MOSFET) and nonvolatile memory. ZrHfO has excellent gate dielectric properties and can be prepared into MOS structure with a low equivalent oxide thickness (EOT). Ruthenium (Ru) modification effects on the ZrHfO high-k MOS capacitor have been investigated. The bulk and interfacial properties changed with the inclusion of Ru nanoparticles. The permittivity of the ZrHfO film was increased while the energy depth of traps involved in the current transport was lowered. However, the barrier height of titanium nitride (TiN)/ZrHfO was not affected by the Ru nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer can be replaced by the novel floating gate structure composed of discrete nanodots embedded in the high-k film. By replacing the SiO2 layer with the ZrHfO film, promising memory functions, e.g., low programming voltage and long charge retention time, can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-ITO), and zinc oxide (nc-ZnO) have been successfully fabricated by the sputtering deposition method followed with the rapid thermal annealing process. Material and electrical properties of these kinds of memory devices have been investigated using analysis tools such as XPS, XRD, and HRTEM; electrical characterizations such as C-V, J-V, CVS, and frequency-dependent measurements. All capacitors showed an obvious memory window contributed by the charge trapping effect. The formation of the interface at the nc-RuO/ZrHfO and nc-ITO/ZrHfO contact regions was confirmed by the XPS spectra. Charges were deeply trapped to the bulk nanocrystal sites. However, a portion of holes were loosely trapped at the nanocrystal/ZrHfO interface. Charges trapped to the different sites lead to different detrapping characteristics. For further improving the memory functions, the dual-layer nc-ITO and -ZnO embedded ZrHfO gate dielectric stacks have been fabricated. The dual-layer embedded structure contains two vertically-separated nanocrystal layers with a higher density than the single-layer embedded structure. The critical memory functions, e.g., memory window, programming efficiency, and charge retention can be improved by using the dual-layer nanocrystals embedded floating gate structure. This kind of gate dielectric stack is vital for the next-generation nonvolatile memory applications.

Thesis (Ph. D.)--University of Washington, 2001. / Vita. Includes bibliographical references (leaves 152-158).

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