Present-day economic and environmental constraints push power systems to be operated closer to their limits. A common limiting factor for power transmission is the risk of voltage instability in recent years. As the ultimate countermeasure to voltage collapse, load shedding is normally considered the last resort, when there are no other alternatives to stop an approaching voltage collapse. The requirements of a practical load shedding scheme are to prevent a power system from voltage collapse and to maximize its reliability. In order to design such a scheme, the following tasks are equally important: 1. Recognizing the approaching voltage collapse. 2. Determining the best load shedding locations. 3. Minimizing the amount of load shedding. This thesis firstly investigates the widely used undervoltage load shedding schemes (UVLS) and the single-port impedance match (SPIM) based schemes. The findings explain the difficulties faced by them. An original load shedding oriented voltage stability monitoring scheme, which involves developing a new multi-port network equivalent, is then developed. With the help of the multi-port network equivalent, the monitoring scheme can not only recognize the approaching voltage collapse in time, but also can easily rank the load buses based on their weakness. The results of ranking are consistent with those obtained from modal analysis method. This thesis then proposes a practical event-driven load shedding scheme based on the experiences learned from the schemes implemented by various utilities. The scheme involves developing a multistage method, which is to optimize the amount of load shedding. A general design procedure for the scheme is presented in the thesis. Using a real 2038 bus system as an example, the design methodology is described in detail. The methodology is expected to help power system engineers develop their own load shedding schemes. A practical emergency demand response scheme is also developed and presented in the appendix. It is aimed at choosing the proper demand response participants and minimizing the total cost while achieving a certain level of operation reserves. / Power Engineering and Power Electronics

Advanced digital modulation schemes used in the wireless applications, result in the modulated RF signals with high peak to average power ratio which requires linear amplification. On the other hand, the demand for a longer talk time with less battery volume and weight, especially in hand-held radio units, necessitate more power efficient methods to be utilized in power amplifier design. But improved linearity and efficiency have always been contradicting requirements demanding innovative power amplifier and linearizer design techniques. Dynamically varying the load impedance and bias point of a transistor according to the varying envelope of the incoming RF signal also known as Dynamic Load Modulation (DLM) and Dynamic Supply Modulation (DSM), respectively, are two separate methods for improving the efficiency in power amplifier design. In this dissertation, a combination of both variable gate bias and tunable load concepts is applied in an amplifier structure consisting of two transistors in parallel. A novel computer aided design methodology is proposed for careful selection of the load and biasing points of the individual transistors. The method which is based on load-pull analysis performs sweeps on the gate bias voltages of the active devices and input drive level of the amplifier in order to obtain ranges of biases that result in the generation of IMD sweet spots. Following that, the amplifier is designed employing the load line theory and bias switching at the same time in order to enhance the efficiency in reduced drive levels while extending the output 1 dB compression point to higher values at higher drives. Tunable matching networks are implemented utilizing varactor stacks in a &Pi / con

Advanced digital modulation schemes used in the wireless applications, result in the modulated RF signals with high peak to average power ratio which requires linear amplification. On the other hand, the demand for a longer talk time with less battery volume and weight, especially in hand-held radio units, necessitate more power efficient methods to be utilized in power amplifier design. But improved linearity and efficiency have always been contradicting requirements demanding innovative power ampli

In wireless communication systems, multiple standards have been implemented to meet the past and present demands of different applications. This proliferation of wireless standards, operating over multiple frequency bands, has increased the demand for radio frequency (RF) components, and consequently power amplifiers (PA) to operate over multiple frequency bands. In this research work, a systematic approach for the synthesis of a novel dual-band matching network is proposed and applied for effective design of PA capable of maintaining high power efficiency at two arbitrary widely spaced frequencies. The proposed dual-band matching network incorporates two different stages. The first one aims at transforming the targeted two complex impedances, at the two operating frequencies, to a real one. The second stage is a dual-band filter that ensures the matching of the former real impedance to the termination impedance to 50 Ohm. Furthermore, an additional transmission line is incorporated between the two previously mentioned stages to adjust the impedances at the second and third harmonics without altering the impedances seen at the fundamental frequencies. Although simple, the harmonic termination control is very effective in enhancing the efficiency of RF transistors, especially when exploiting the Class J design space. The proposed dual-band matching network synthesis methodology was applied to design a dual-band power amplifier using a packaged 45 W gallium nitride (GaN) transistor. The power amplifier prototype maintained a peak power efficiency of about 68% at the two operating frequencies, namely 800 MHz and 1.9 GHz. In addition, a Volterra based digital predistortion technique has been successfully applied to linearize the PA response around the two operating frequencies. In fact, when driven with multi-carrier wideband code division multiple access (WCDMA) and long term evolution (LTE) signals, the linearized amplifier maintained an adjacent channel power ratio (ACPR) of about 50 dBc and 46 dBc, respectively.

<p>This dissertation examines the use of artificial structured materials -- known as metamaterials -- in two antenna applications in which conventional dielectric materials are otherwise used. In the first application, the use of metamaterials to improve the impedance matching of planar phased array antennas over a broad range of scan angles is explored. A phased array antenna is composed of an array of antenna elements and enables long-distance signal propagation by directional radiation. The direction of signal propagation is defined as the scan angle. The power transmission ratio of a phased array is the ratio of the radiated power to the input power, and depends on the scan angle. The variation in the power transmission ratio is due to the different mutual coupling contributions between antenna elements at different scan angles. An optimized stack of dielectric layers, known as a wide-angle impedance matching layer (WAIM), is used to optimize the power transmission ratio profile over a broad range of scan angles. In this work, the use of metamaterials to design anisotropic WAIMs with access to a larger range of constitutive parameters -- including magnetic permeability -- to offer an improved power transmission ratio at a broad range of scan angles is investigated. </p> <p>In the second antenna application, a strategy to create maximally transmissive and minimally reflective electromagnetic radome materials using embedded metamaterial inclusions is introduced. A radome is a covering used to protect an antenna from weather elements or provide structural function such as the prevention of aerodynamic drag. A radome should be made from a fully transparent and non-refractive material so that radiated fields from and to the enclosed antenna are not disrupted. The aim of this research was to demonstrate that embedded metamaterial inclusions can be used to isotropically adjust the dielectric properties of a composite material to a desired value. This strategy may lead to the creation of a structural material with electromagnetic properties close to air, thus reducing the detrimental scattering effects often associated with conventional radome materials.</p> <p>Chapter 1 introduces the concept of metamaterials and discusses the use of subwavelength metallic structures to artificially engineer constitutive parameters such as permeability of permittivity. In Chapter 2, the analytical formulations that enable the characterization of the transmission performance of a planar phased array covered with anisotropic impedance matching layers are developed. Chapter 3 discusses the design rules that must govern the design parameters of anisotropic WAIMs realizable using metamaterials, and also presents examples of anisotropic impedance matching layers that provide a maximum power transmission ratio for most scan angles. In addition, numerical and experimental results on a metamaterial placed over a phased array are presented. In Chapter 4, the feasibility of using metamaterials to realize a minimally transparent and fully transmissive radome material is numerically investigated. In Chapter 5, experimental results that corroborate earlier numerical simulation results are analyzed.</p> / Dissertation

Αντικείμενο αυτής της διπλωματικής εργασίας είναι ο σχεδιασμός ενός αναλογικού ενισχυτικού κυκλώματος χαμηλού θορύβου το οποίο θα λειτουργεί σε υψηλές συχνότητες. Ο ενισχυτής αυτός προορίζεται για χρήση στο analog front end κυκλωμάτων τα οποία θα υποστηρίζουν πρωτόκολλα μεταφοράς πληροφορίας σε δίκτυα ισχύος (Power Line Communication, Internet of Things). Για τον σχεδιασμό γίνεται η χρήση της κλασικής θεωρίας μικροηλεκτρονικών κυκλωμάτων αλλά και της μικροκυματικής θεωρίας. Παρουσιάζονται οι διάφορες τοπολογίες των τρανζίστορ BJT, γίνεται μία παρουσίαση των βασικότερων πηγών θορύβου και αναφέρονται βασικές αρχές των S παραμέτρων και της προσαρμογής εμπέδησης. Ο ενισχυτής κοινού εκπομπού απορρίφθηκε καθώς αποδείχθηκε αμφίπλευρος οπότε καταλήξαμε στην επιλογή της cascode τοπολογίας η οποία προσδίδει ευστάθεια, απομόνωση και καλή γραμμικότητα. Η απόλυτη προδιαγραφή που τέθηκε για το θόρυβο δεν επιτεύχθηκε και οπότε αναφέραμε τους λόγους που οδήγησαν σε αυτό και προτείναμε πιθανές λύσεις μέσω άλλων υλοποιήσεων. / The subject of this diploma thesis is the design of a low noise high-frequency analogue amplifier. The amplifier is designed to be used in the analog front end of circuits designed to support protocols that control the transmission of information over power lines (internet of things). To achieve this goal we make use of classic microelectronics theory but also microwave theory. The topologies of the BJT transistors are presented, we also go through the basic noise production reasons and we also make a short reference on the s-parameters and on the basic principles of impedance matching. The common emitter amplifier proved to be bilateral, so the cascode amplifier, which provides stability, isolation and linearity, was preferred. The noise specification was not achieved so we present the basic reasons of this, as well as we propose possible solutions.

No description available.

In wireless communication systems, multiple standards have been implemented to meet the past and present demands of different applications. This proliferation of wireless standards, operating over multiple frequency bands, has increased the demand for radio frequency (RF) components, and consequently power amplifiers (PA) to operate over multiple frequency bands. In this research work, a systematic approach for the synthesis of a novel dual-band matching network is proposed and applied for effective design of PA capable of maintaining high power efficiency at two arbitrary widely spaced frequencies. The proposed dual-band matching network incorporates two different stages. The first one aims at transforming the targeted two complex impedances, at the two operating frequencies, to a real one. The second stage is a dual-band filter that ensures the matching of the former real impedance to the termination impedance to 50 Ohm. Furthermore, an additional transmission line is incorporated between the two previously mentioned stages to adjust the impedances at the second and third harmonics without altering the impedances seen at the fundamental frequencies. Although simple, the harmonic termination control is very effective in enhancing the efficiency of RF transistors, especially when exploiting the Class J design space. The proposed dual-band matching network synthesis methodology was applied to design a dual-band power amplifier using a packaged 45 W gallium nitride (GaN) transistor. The power amplifier prototype maintained a peak power efficiency of about 68% at the two operating frequencies, namely 800 MHz and 1.9 GHz. In addition, a Volterra based digital predistortion technique has been successfully applied to linearize the PA response around the two operating frequencies. In fact, when driven with multi-carrier wideband code division multiple access (WCDMA) and long term evolution (LTE) signals, the linearized amplifier maintained an adjacent channel power ratio (ACPR) of about 50 dBc and 46 dBc, respectively.

Please read the abstract (Summary) in the section 00front of this document / Dissertation (MEng (Electronic Engineering))--University of Pretoria, 2007. / Electrical, Electronic and Computer Engineering / MEng / Unrestricted

[pt] A utilização de transformadores de impedância banda larga possibilita o acoplamento de forma eficiente das linhas convencionais de 50 (ômegas) dos sistemas de alta freqüência aos componentes optoeletrônicos de alta velocidade de baixa impedância, tais como lasers semicondutores (tipicamente com 3 a 5 (ômegas) de resistência de entrada). Uma das principais restrições para a realização de um transformador de impedância planar para uso em sistemas de comunicações ópticas é a sua dimensão física. A fim de se obter um transformador de impedância compacto, de dimensões compatíveis com às dos dispositivos optoeletrônicos, foram analisadas diferentes configurações. Inicialmente foi analisada a configuração coplanar (CPW) utilizando substrato de altíssima constante dielétrica. Devido às limitações encontradas nesta configuração, são propostas, aqui, duas outras soluções. As duas novas configurações propostas associam ao substrato bulk convencional de alumina, filmes de elevada constante dielétrica. Foi desenvolvida uma técnica para caracterizar a constante dielétrica e as perdas dos filmes especialmente fabricados para este trabalho. As análises teóricas mostraram que as configurações propostas apresentam desempenho muito superior ao desempenho das configurações convencionais CPW. Foi implementado o transformador de impedância utilizando uma das soluções propostas e seu desempenho foi avaliado experimentalmente. / [en] Wide-band transmission line impedance transformer enables efficient coupling of 50 (ômegas) transmission line circuits to low impedance high-speed optoelectronic components such as semiconductor lasers (typically with input resistance of 3 to 5 [ômegas]). The physical dimensions of the planar transmission line transformer have to be properly chosen to allow its use in optical communication systems. In order to design a high performance impedance transformer with physical dimensions compatible with optoelectronic components, several possibilities were investigated. A CPW configuration with very high dielectric constant bulk substrate has been analyzed. Simulations have shown some limitations in the performance of this configuration. Then, two new configurations were introduced. Both configurations are obtained using high dielectric constant films and alumina bulk substrate. A new technique has been developed in order to characterize the dielectric constant and the losses of the films specially made for this thesis. Simulations have shown that the performance of both new configurations is much better than the conventional CPW configuration performance. The planar transmission line impedance transformer has been constructed using a new configuration and its performance has been experimentally evaluated.