Orientador: Marceloi Ornaghi Orlandi / Banca: José Antônio Malmonge / Banca: Neftali Lenin Villarreal Carreño / Resumo: Nanoestruturas unidimensionais (1D) é foco de intensivos estudos para possibilitar a fabricação de dispositivos nano escalares e sensores. As nanofitas de óxidos metálicos como In2O3 e SnO2 têm sido estudadas devido as suas excelentes propriedades elétricas e sensoras. A dopagem intencional desses óxidos pode modificar suas propriedades e render novas aplicações, pois nanofitas de óxido de índio dopadas de estanho (ITO) possuem alta condutividade elétrica e alta transmitância na região do espectro visível. O objetivo desse trabalho foi estudar o crescimento de nanoestruturas de In2O3 dopado com estanho (ITO) sintetizadas via fase vapor pelo processo de redução carbotérmica com a co-evaporação dos óxidos. Os materiais obtidos nas sínteses foram caracterizados por difração de raios X, espectroscopia no ultravioleta-visível, medidas elétricas e microscopia eletrônica. Para esse estudo foram variadas algumas condições de síntese objetivando obter nanofitas de ITO que apresentassem boa homogeneidade estrutural e morfológica. Na primeira etapa do estudo variou-se a razão óxido/carbono nos materiais de partida, e os resultados mostraram que as variadas proporções de óxidos e carbono influenciam nas fases de crescimento das nanoestruturas. A síntese que apresentou melhor homogeneidade teve seu tempo de patamar variado e, por fim, variou-se o fluxo de gás de arraste, sendo que esses dois parâmetros não influenciam significativamente na homogeneidade do material obtido. Desta forma, otimizou-se as condições de síntese sem que houvesse prejuízo na qualidade do material obtido, o que é importante visando aplicações tecnológicas do material. Além disso, com base nos resultados de microscopia eletrônica e nas reações químicas que ocorrem durante a síntese um mecanismo de crescimento das nanoestruturas foi proposto. / Abstract: 1D nanostructures is the main focus of many studies due to the possibility to produce devices with high performance.Nanobelts of the metallic oxides In2O3 and SnO2 have been studied because its excellent electrical and sensing properties. The intentional doping of the oxides can modify its properties and yield new applications because tin doped indium oxide nanobelts (ITO) have high electrical conductivity and high transmittance in the visible spectrum. The aim of this work was to study the growth of tin doped In2O3 (ITO) nanostructures synthesized by vapor phase using the Carbothermal reduction process with the co-evaporation of oxides. The materials obtained after the synthesis were characterized by X-ray diffraction, spectroscopy in the ultraviolet-visible, electrical measurements and electron microscopy. For this study were used different conditions of synthesis, aiming to obtain ITO nanobelts with good structural and morphological homogeneity. In the first stage of the study the parameter altered was ratio ranged oxide / carbon in the starting material, and the results showed that different proportions of oxides and carbon influenced the phases that nanostructures were obtained. The synthesis that presented the best homogeneity had his time varied and, finally, ranged up the flow of gas drag of level varied, and that these two parameters did not significantly affect the homogeneity of the material. Thus, the conditions for synthesis were optimized with no loss in quality of material, which is important for technological applications of the material. Furthermore, based on the results of electron microscopy and chemical reactions that occur during the synthesis, and a growth mechanism nanostructures was proposed. / Mestre

Made available in DSpace on 2014-06-11T19:25:32Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-07-08Bitstream added on 2014-06-13T19:32:43Z : No. of bitstreams: 1 lucindo_ja_me_ilha.pdf: 4031068 bytes, checksum: 3eb0babe24686f1deb0c263ea98155e4 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Nanoestruturas unidimensionais (1D) é foco de intensivos estudos para possibilitar a fabricação de dispositivos nano escalares e sensores. As nanofitas de óxidos metálicos como In2O3 e SnO2 têm sido estudadas devido as suas excelentes propriedades elétricas e sensoras. A dopagem intencional desses óxidos pode modificar suas propriedades e render novas aplicações, pois nanofitas de óxido de índio dopadas de estanho (ITO) possuem alta condutividade elétrica e alta transmitância na região do espectro visível. O objetivo desse trabalho foi estudar o crescimento de nanoestruturas de In2O3 dopado com estanho (ITO) sintetizadas via fase vapor pelo processo de redução carbotérmica com a co-evaporação dos óxidos. Os materiais obtidos nas sínteses foram caracterizados por difração de raios X, espectroscopia no ultravioleta-visível, medidas elétricas e microscopia eletrônica. Para esse estudo foram variadas algumas condições de síntese objetivando obter nanofitas de ITO que apresentassem boa homogeneidade estrutural e morfológica. Na primeira etapa do estudo variou-se a razão óxido/carbono nos materiais de partida, e os resultados mostraram que as variadas proporções de óxidos e carbono influenciam nas fases de crescimento das nanoestruturas. A síntese que apresentou melhor homogeneidade teve seu tempo de patamar variado e, por fim, variou-se o fluxo de gás de arraste, sendo que esses dois parâmetros não influenciam significativamente na homogeneidade do material obtido. Desta forma, otimizou-se as condições de síntese sem que houvesse prejuízo na qualidade do material obtido, o que é importante visando aplicações tecnológicas do material. Além disso, com base nos resultados de microscopia eletrônica e nas reações químicas que ocorrem durante a síntese um mecanismo de crescimento das nanoestruturas foi proposto. / 1D nanostructures is the main focus of many studies due to the possibility to produce devices with high performance.Nanobelts of the metallic oxides In2O3 and SnO2 have been studied because its excellent electrical and sensing properties. The intentional doping of the oxides can modify its properties and yield new applications because tin doped indium oxide nanobelts (ITO) have high electrical conductivity and high transmittance in the visible spectrum. The aim of this work was to study the growth of tin doped In2O3 (ITO) nanostructures synthesized by vapor phase using the Carbothermal reduction process with the co-evaporation of oxides. The materials obtained after the synthesis were characterized by X-ray diffraction, spectroscopy in the ultraviolet-visible, electrical measurements and electron microscopy. For this study were used different conditions of synthesis, aiming to obtain ITO nanobelts with good structural and morphological homogeneity. In the first stage of the study the parameter altered was ratio ranged oxide / carbon in the starting material, and the results showed that different proportions of oxides and carbon influenced the phases that nanostructures were obtained. The synthesis that presented the best homogeneity had his time varied and, finally, ranged up the flow of gas drag of level varied, and that these two parameters did not significantly affect the homogeneity of the material. Thus, the conditions for synthesis were optimized with no loss in quality of material, which is important for technological applications of the material. Furthermore, based on the results of electron microscopy and chemical reactions that occur during the synthesis, and a growth mechanism nanostructures was proposed.

Made available in DSpace on 2016-06-02T20:36:45Z (GMT). No. of bitstreams: 1 5302.pdf: 3050627 bytes, checksum: d14aad95482698e7d39d217f3b9d0922 (MD5) Previous issue date: 2011-11-22 / Universidade Federal de Sao Carlos / In this study, in the first step, Indium tin oxide nanoparticles were synthesized via a non-aqueous route involving the solvothermal treatment of indium (III) acetylacetonate and tin (IV) chloride in polyethylene glycol Mw=1000. The use of microwave heating reduced the reaction time considerably when compared to traditional heating methods. An analysis by transmission electron microscopy (TEM) revealed particles of relatively uniform sizes and shapes. The high crystallinity of the material was observed by high resolution transmission electron microscopy (HRTEM). The nanocristal size founded by count was 5,1nm. A powder X-ray diffraction analysis indicated that all the materials were crystalline. Infrared spectra confirmed the presence of organic material on the nanoparticle surface. By thermogravimetric analysis (TGA) determined that 11.3% of the total mass corresponds to the polymer. Resistivity values below 10-1 Ω.cm were obtained in thin films and pellets, and semiconductor behavior. In the second step, a model to control the covered area of graphene oxide (GO) sheets by ITO nanoparticles was proposed. The method used was add graphene oxide at the synthetic route to obtain pure ITO. The composites were characterized by XRD, FT-IR, TGA and TEM. XRD results for the synthesized materials confirmed the diffraction patterns of ITO in the different composites synthesized. Through the analysis of FT-IR was possible confirm the presence of the polymer formed on the surface of the oxide nanoparticle and functional groups of graphene oxide sheets. The polymer attached on the oxide surface is responsible for the strong interaction between the ITO and graphen oxide sheets. TEM images for the samples with different cover percentage showed the controller achieved with the synthesis proposed. The composite with 100 or 10% of metal oxides covering the sheets surface did not show the presence of nanocrystals out sheets. The percent value of the covered area obtained of 15% founded by image J analisys is near to the calculated value. From this value we can say that the model works well to control the covered area of GO by nanocristals. The electrical resistivity values found are comparable to the pure ITO, however, with a smaller amount of ITO. / Neste estudo, na primeira etapa, nanopartículas de óxido de índio dopado com estanho foram sintetizadas por uma rota não aquosa envolvendo o tratamento solvotermal de acetilacetonato de índio (III) e cloreto de estanho (IV) em polietilenoglicol de massa molecular 1000. O uso de aquecimento auxiliado por microondas reduziu o tempo de reação quando comparado aos métodos tradicionais de aquecimento. A análise por microscopia eletrônica de transmissão (TEM) mostrou partículas com tamanho e forma relativamente uniformes. A alta cristalinidade do material foi observada por microscopia eletrônica de alta resolução (HRTEM). O tamanho dos nanocristais obtidos por contagem foi de 5,1 nm. A análise de difração de Raios-X (DRX) indicou a cristalinidade do material. O espectro de infravermelho (FT-IR) confirmou a presença do material orgânico na superfície das nanopartículas. Pela análise termogravimétrica (TGA) determinou que 11,3% da massa total corresponde ao polímero. Resistividade abaixo de 10-1 Ω.cm foi obtido no filme e na pastilha, com comportamento semicondutor do óxido. Na segunda etapa, um modelo de controlar a área das folhas de óxido de grafeno (OG) coberta por nanocristais foi proposto. O método usado foi adicionar óxido de grafeno à rota de síntese do ITO puro. Os compósitos foram caracterizados por DRX, FT-IR, TGA e TEM. Os resultados de difração de Raios-X confirmaram o padrão de difração do ITO nos diferentes compósitos. Pela análise de FT-IR foi possível confirmar a presença do polímero na superfície das nanoparticulas e os grupos funcionais das folhas de óxido de grafeno. O polímero ligado na superfície do óxido e responsável pela forte interação entre o ITO e as folhas de óxido de grafeno. As imagens de TEM para as amostras com porcentagens de cobertura diferente mostraram o controle alcançado com o método de síntese proposto. Os compósitos com 100% e 10% de óxido metálico cobrindo a superfície das folhas mostraram que não ocorreu a formação de nanopartículas fora das folhas. O valor de 15 % de porcentagem de área coberta obtido é próximo ao valor calculado. A partir deste valor, pode-se dizer que o modelo funciona bem para controlar a área de OG coberta por nanocristais. Os valores de resistividade elétrica encontrados são comparáveis ao ITO puro, no entanto, com uma quantidade menor de ITO.

Neste trabalho é apresentado o estudo teórico-experimental a respeito das propriedades piezoresistivas de dois tipos de materiais com estrutura amorfa. O primeiro material estudado é o carbono semelhante ao diamante e o segundo é o óxido de estanho dopado com índio. O estudo compreende o levantamento bibliográfico sobre os materiais, projeto teórico e prático de estruturas individuais de testes e piezoresistores configurados em ponte completa, além da realização das caracterizações elétricas, mecânicas e térmicas de acordo com um arranjo experimental proposto. As caracterizações experimentais foram implementadas usando a técnica de flexão de uma viga engastada e a teoria das pequenas deflexões. Os diferentes materiais caracterizados e analisados apresentaram o efeito piezoresistivo e um sinal de sensibilidade mecânica condizente com as características esperadas para estes filmes. Ambos os filmes respondem as variações da temperatura de forma linear e apresentam uma direção de dependência com a temperatura. Os filmes de carbono amorfo hidrogenado livre de dopantes apresentam curvas de corrente e tensão características indicando um mecânismo de condução elétrica complexo devido a sua diversidade de microestruturas e relacionado aos parâmetros de processos de deposição. Os filmes com nitrogênio são mais estáveis termicamente com coeficientes da ordem de - 4900 ppm/ºC. Os resultados encontrados indicam a existência de dois tipos de portadores de cargas responsáveis pela mobilidade média, resistividade e efeito piezoresistivo. Os filmes de óxido de estanho dopado com índio livre e com 5 % e 10 % de oxigênio no plasma apresentam características de diminuição da resistência elétrica com o esforço mecânico e exibem efeitos de piezoresistividade na faixa de - 12 a - 23. Amostras destes filmes com oxigênio apresentaram um fator de sensibilidade mecânica muito baixa e são menos estáveis termicamente que as amostras livres de oxigênio. Os filmes estudados podem ser usados em aplicações envolvendo extensiometria ou mesmo em sensores de pressão piezoresistivos após adequação do processo de deposição e de recozimentos térmicos. / This tesis presents the piezoresistivity theoretical and experimental study for two materials with amorphous structure. The first material is the Diamond Like Carbon and the other is the Indium Tin Oxide. The work includes the bibliographic study, theoretical and practical design of structures for testing individual and piezoresistors configured in bridge, in addition to the completion of the characterizations electrical, mechanical and thermal according to a proposed experimental arrangement. The experimental characterizations have been implemented using the technique of cantilever and the theory of small deflections. The different materials analyzed showed the piezoresistive effect with some order of magnitude and a sign of sensitivity to mechanical stress of tension consistent with the characteristics expected for these types of films. Both films respond to changes in temperature in a very linear and have a direction of dependency with the temperature according to the literature. The films of free doping have curves of current and voltage characteristics for this type of material indicating a mechanism of electric conduction very complex because of its diversity of microstructures and processes related to the parameters of the deposition and films with nitrogen are more thermally stable with coefficients of order of - 4900 ppm/ºC. The results indicate the existence of two types of charge carriers responsible for the average mobility and hence the resistivity and the piezoresistive effect. The films of indium tin oxide free and with some oxygen content in plasma presents characteristics of decreased electrical resistance to mechanical stress and exhibit effects of piezoresistive in the range of - 12 to - 23. Samples of these films with oxygen showed a factor of very low mechanical sensitivity and are less stables to thermal effect the samples free of oxygen. The films studied can be used in certain applications such strain gauges or even in piezoresistive pressure sensors, after adequate process of deposition and thermal annealing.

Magister Legum - LLM / South Africa

Lower back pain remains one of the most common problems in public health throughout the industrialized world (Strine and Hootman) (Shiri, Solovieva and K.). The prevalence is about 39-54% annually and 60-65% in a lifetime (Hillman, Wright and Rajaranam) (Leboeuf-Yde, N. and Lauritzen). In the United States, lower back pain is the second most common cause of disability, and is the highest cause of disability among men (Center for Disease Control, 2009). An individual quantitative physical examination to detect muscle deficiencies would be very useful for proper placement of workers in demanding physical jobs where back injuries are common. Trunk muscle extensor endurance might be the best approach for this issue.

Transparent patch antennas are microstrip patch antennas that have a certain level of optical transparency. Highly transparent patch antennas are potentially suitable for integration with solar panels of small satellites, which are becoming increasingly important in space exploration. Traditional patch antennas employed on small satellites compete with solar cells for surface area. However, a transparent patch antenna can be placed directly on top of solar cells and resolve the issue of competing for limited surface real estate. For such an integration, a high optical transparency of the patch antenna is required from the solar cells' point of view. On the other hand, the antenna should possess at least acceptable radiation properties at the same time. This dissertation focuses on some of the most important concerns from the perspective of small satellite applications. For example, an optimization method to simultaneously improve both optical transparency and radiation efficiency of the antenna is studied. Active integrated antenna design method is extended to meshed patch applications in an attempt to improve the overall power efficiency of the front end communication subsystem. As is well known, circular polarization is immune from Faraday rotation effect in the ionosphere and thus can avoid a 3-dB loss in geo-satellite communication. Therefore, this research also aims to present design methods for circularly polarized meshed patch antennas. Moreover, a meshed patch antenna capable of supporting a high communication data rate is investigated. Lastly, other types of transparent patch antennas are also analyzed and compared to meshed patches. In summary, many properties of transparent patch antennas are examined in order to meet different design requirements.

No description available.

Starting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields. The use of transparent conducting oxide (TCO) in the field of sensor applications has increased and has been the subject of extensive research. Good electrical properties, good optical properties, wide band gap, portability, easy processing, and low cost has led to the extensive research on TCO for sensor applications. For this research purpose two specific types of sensor applications namely, light sensing and humidity sensing were considered. For this purpose, two sets of metal-oxide-semiconductor field effect transistors (MOSFET) with one set having transparent aluminum doped zinc oxide and the other having indium tin oxide respectively as their gate metal was fabricated. The MOSFETs were fabricated using a four level mask and tested.

A heater designed to monitor surface temperature fluctuations during pool boiling experiments while the bubbles were simultaneously being observed has been fabricated and tested. The heat source was a transparent indium tin oxide (ITO) layer commercially deposited on a fused quartz substrate. Four copper-nickel thin film thermocouples (TFTCs) on the heater surface measured the surface temperature, while a thin layer of sapphire or fused silica provided electrical insulation between the TFTCs and the ITO. The TFTCs were micro-fabricated using the liftoff process to deposit the nickel and copper metal films. The TFTC elements were 50 microns wide and overlapped to form a 25 micron by 25 micron junction. TFTC voltages were recorded by a DAQ at a sampling rate of 50 kHz. A high-speed CCD camera recorded bubble images from below the heater at 2000 frames/second. A trigger sent to the camera by the DAQ synchronized the bubble images and the surface temperature data. As the bubbles and their contact rings grew over the TFTC junction, correlations between bubble behavior and surface temperature changes were demonstrated. On the heaters with fused silica insulation layers, 1-2 C temperature drops on the order of 1 ms occurred as the contact ring moved over the TFTC junction during bubble growth and as the contact ring moved back over the TFTC junction during bubble departure. These temperature drops during bubble growth and departure were due to microlayer evaporation and liquid rewetting the heated surface, respectively. Microlayer evaporation was not distinguished as the primary method of heat removal from the surface. Heaters with sapphire insulation layers did not display the measurable temperature drops observed with the fused silica heaters. The large thermal diffusivity of the sapphire compared to the fused silica was determined as the reason for the absence of these temperature drops. These findings were confirmed by a comparison of temperature drops in a 2-D simulation of a bubble growing over the TFTC junction on both the sapphire and fused silica heater surfaces. When the fused silica heater produced a temperature drop of 1.4 C, the sapphire heater produced a drop of only 0.04 C under the same conditions. These results verified that the lack of temperature drops present in the sapphire data was due to the thermal properties of the sapphire layer. By observing the bubble departure frequency and site density on the heater, as well as the bubble departure diameter, the contribution of nucleate boiling to the overall heat removal from the surface could be calculated. These results showed that bubble vapor generation contributed to approximately 10% at 1 W/cm^2, 23% at 1.75 W/cm^2, and 35% at 2.9 W/cm^2 of the heat removed from a fused silica heater. Bubble growth and contact ring growth were observed and measured from images obtained with the high-speed camera. Bubble data recorded on a fused silica heater at 3 W/cm^2, 4 W/cm^2, and 5 W/cm^2 showed that bubble departure diameter and lifetime were negligibly affected by the increase in heat flux. Bubble and contact ring growth rates demonstrated significant differences when compared on the fused silica and sapphire heaters at 3 W/cm^2. The bubble departure diameters were smaller, the bubble lifetimes were longer, and the bubble departure frequency was larger on the sapphire heater, while microlayer evaporation was faster on the fused silica heater. Additional considerations revealed that these differences may be due to surface conditions as well as differing thermal properties. Nucleate boiling curves were recorded on the fused silica and sapphire heaters by adjusting the heat flux input and monitoring the local surface temperature with the TFTCs. The resulting curves showed a temperature drop at the onset of nucleate boiling due to the increase in heat transfer coefficient associated with bubble nucleation. One of the TFTC locations on the sapphire heater frequently experienced a second temperature drop at a higher heat flux. When the heat flux was started from 1 W/cm^2 instead of zero or returned to zero only momentarily, the temperature overshoot did not occur. In these cases sufficient vapor remained in the cavities to initiate boiling at a lower superheat.