In-situ x-ray photoemission (XPS) and ex-situ FTIR studies of nanoporous organosilicate glass (OSG) films point to the separate roles of radicals vs. VUV photons in the carbon abstraction. The studies indicate that reaction with O2 in presence of VUV photons (~123 nm) result in significant carbon abstraction within the bulk and that the kinetics of this process is diffusion-limited. In contrast, OSG exposed to atomic O (no VUV) results in Si-C bond scission and Si-O bond formation, but this process is self-limiting after formation of ~1 nm thick SiO2 surface layer that inhibits further diffusion. Therefore, the diffusion-dominated kinetics of carbon abstraction observed for OSG exposed to O2 plasma is definitively attributed to the diffusion of O2 down OSG nanopores, reacting at photo-activated sites, rather than to the diffusion of atomic O. Pretreatment of OSG by 900 eV Ar+ ion bombardment also results in formation of 1 nm thick SiO2-like surface overlayer that inhibits O2 diffusion, inhibiting VUV+O2 and O2 plasma-induced reactions, and that the effectiveness of this treatment increases with ion kinetic energy. On the contrary, organosilicate glass (OSG) films with backbone carbon (-Si-R-Si-) exhibit significantly enhanced resistance to carbon loss upon exposure to O2 plasma, radicals and VUV+O2 compared to films with terminal methyl groups (Si-CH3). Films incorporating backbone carbon chains (-Si-R-Si-) were deposited from 1,2 bis (triethoxysilyl) ethane (BTESE) precursor by ebeam or plasma cross-linking. The radical effects on BTESE film indicates negligible carbon loss or Si oxidation, combined with C-O bond formation, under conditions where OSG films with terminal methyl groups exhibit > 80% carbon loss within the surface region of the film. C-O bond formation is never observed for terminal CH3 groups. Further, backbone carbon (-Si-R-Si-) films exposed to VUV+O2 exhibit self-limiting, minimal net carbon loss. This indicates that plasma-induced Si-C bond rupture still occurs in the linking unit, but with a low probability of simultaneous rupture of both Si-C bonds required for abstraction of an in-line methylene bridging group. The data thus demonstrate that OSG films containing backbone carbon groups exhibit greatly reduced rates of carbon loss in the presence of O2 plasma, radicals or VUV+O2 compared to films with terminal carbon groups due to fundamentally different patterns of Si-C bond scission. The results demonstrate the potential of backbone carbon low-k films to resist plasma induced damage.

Aujourd’hui plusieurs obstacles technologiques et limitations physiques s’opposent à la poursuite de la miniaturisation de la technologie CMOS : courants de fuite, effet de canal court, effet de porteurs chauds et fiabilité des oxydes de grille. Le transistor à un électron (SET) fait partie des composants émergents candidats pour remplacer les transistors CMOS ou pour constituer une technologie complémentaire à celle-ci. Ce travail de thèse traite de l’amélioration des caractéristiques électriques du transistor à un électron en optimisant ses jonctions tunnel. Cette optimisation commence tout d’abord par une étude des modes de conduction à travers la jonction tunnel. Elle se conclut par le développement d’une jonction tunnel optimisée basée sur un empilement de matériaux diélectriques (principalement Al2O3, HfO2 et TiO2) ayant des propriétés différentes en termes de hauteurs de barrières et de permittivités relatives. Ce manuscrit présente, la formulation des besoins du SET et de ses jonctions tunnel, le développement d’outils de simulation appropriés - basés sur les matrices de transmission - pour la simulation du courant des jonctions tunnel du SET, l’identification des stratégies d’optimisation de ces dernières, grâce aux simulations et finalement l’étude expérimentale et l’intégration technologique des jonctions tunnel optimisées dans le procédé de fabrication de SET métallique en utilisant la technique de dépôt par couches atomiques (ALD). Ces travaux nous ont permis de prouver l’intérêt majeur de l’ingénierie des jonctions tunnel du SET pour accroitre son courant à l’état passant, réduire son courant de fuite et étendre son fonctionnement à des températures plus élevées. / Today, several technological barriers and physical limitations arise against the miniaturization of the CMOS: leakage current, short channel effects, hot carrier effect and the reliability of the gate oxide. The single electron transistor (SET) is one of the emerging components most capable of replacing CMOS technology or provide it with complementary technology. The work of this thesis deals with the improvement of the electrical characteristics of the single electron transistor by optimizing its tunnel junctions. This optimization initially starts with a study of conduction modes through the tunnel junction. It concludes with the development of an optimized tunnel junction based on a stack of dielectric materials (mainly Al2O3, HfO2 and TiO2), having different properties in terms of barrier heights and relative permittivities. This document, therefore, presents the theoretical formulation of the SET’s requirements and of its tunnel junctions, the development of appropriate simulation tools - based on the transmission matrix model- for the simulation of the SET tunnel junctions current, the identification of tunnel junctions optimization strategies from the simulations results and finally the experimental study and technological integration of the optimized tunnel junctions into the metallic SET fabrication process using the atomic layer deposition (ALD) technique. This work allowed to demonstrate the significance of SET tunnel junctions engineering in order to increase its operating current while reducing leakage and improving its operation at higher temperatures.