Dans ce travail nous avons découvert un nouvel oxyphosphate PbFe3O(PO4)3 dont nous avons déterminé la structure par diffraction des rayons X sur monocristal entre 293 K et 973 K (monoclinique, groupe d’espace P21/m, a = 7,55826 Å, b = 6,3759 Å, c = 10,4245 Å et β = 99,956°, Z = 2, à température ambiante). La mesure de la susceptibilité magnétique statique et les mesures de chaleur spécifiques effectuées sur monocristaux révèlent l’existence d’une séquence inhabituelle de transitions de phase de type ferromagnétiques à Tc1 = 31,8 K, T2 = 23,4 K et Tc3 = 10 K. La mesure de la susceptibilité alternative suggère l’existence d’une dynamique type vitreuse entre ~20 K et Tc3. Nous avons réussi une première extraction des valeurs des exposants critiques (β, γ et δ) par les mesures de la susceptibilité magnétique alternative à la fois sur les poudres et les monocristaux de PbFe3O(PO4)3 et nous avons trouvé des valeurs compatibles avec celles prédites par la théorie du champ moyen.Nous avons aussi étudié et caractérisé les poudres de la série des composés AFe3O(PO4)3 (A=Ca, Sr, Pb) par la diffraction des rayons X, la microsonde Castaing (EPMA) couplée avec spectroscopie à dispersion de longueur d’onde (WDS), la spectroscopie optique et Raman, les mesures calorimétriques (DSC et chaleur spécifique) et les mesures magnétiques. Les mesures d’aimantation, de susceptibilité magnétique et de chaleur spécifique effectuées sur les poudres de la série des composés AFe3O(PO4)3 (A=Ca, Sr, Pb) ont confirmé la succession des trois transitions du second ordre de type ferromagnétique s’étendant sur l’intervalle de température 32 – 8 K. Les mesures de la réflexion diffuse révèlent l’existence de deux bandes d’absorption à 1047 et 837 nm dans les poudres de PbFe3O(PO4)3 et de SrFe3O(PO4)3, avec des sections efficaces ~10-20 cm2 typiques des transitions intraconfigurationnelles interdites de spin et dipolaire électrique forcée.L’exploration du système PbO-Fe2O3-P2O5 a conduit à la découverte d’une nouvelle phase de type Langbeinite et de composition chimique Pb3Fe4(PO4)6, dont la structure cristalline est déterminée par diffraction des rayons X à température ambiante sur monocristaux (P 21 3, Z=4, a=9,7831(2) Å). Cette phase ne subit aucune transition de phase sur la gamme de température 350 – 6 K et ne présente aucun type d’ordre à longue portée jusqu’à 2 K. / A new oxyphosphate compound PbFe3O(PO4)3 has been discovered. Its crystal structure was characterized by single crystal X-ray diffraction (XRD) between 293 and 973 K (monoclinic symmetry P 21/m, a = 7.5826 Å, b = 6.3759 Å, c = 10.4245 Å and  = 99.956 °, Z = 2, at room temperature). DC magnetic susceptibility and specific heat measurements performed on single crystals unveiled an unusual sequence of second order ferromagnetic-like phase transitions at Tc1 = 31.8 K, T2 = 23.4 K and Tc3 ~ 10 K. AC magnetic susceptibility suggests a glassy-like dynamics between ~ 20 K and Tc3. A first extraction of the critical exponents (β,γ,δ) was performed by ac magnetic susceptibility in both PbFe3O(PO4)3 powders and single crystals and the values were found to be consistent with mean-field theory.AFe3O(PO4)3 (A= Ca, Sr and Pb) powder compounds were studied by means of X-Ray diffraction (XRD), from 300 to 6 K in the case of A=Pb, electron-probe microanalysis (EPMA) coupled with wavelength dispersion spectroscopy (WDS), Raman and diffuse reflectance spectroscopies, specific heat and magnetic properties measurements. Magnetization, magnetic susceptibility and specific heat measurements carried out on AFe3O(PO4)3 (A= Ca, Sr and Pb) powders firmly establish a series of three ferromagnetic (FM)-like second order phase transitions spanned over the 32 – 8 K temperature range. Diffuse reflectance measurements reveal two broad absorption bands at 1047 and 837 nm, in both PbFe3O(PO4)3 and SrFe3O(PO4)3 powders, with peak cross sections ~10-20 cm2 typical of spin-forbidden and forced electric dipole transitions.Further exploration of the PbO-Fe2O3-P2O5 system led to the discovery of a new langbeinite phase, Pb3Fe4(PO4)6, the crystal structure of which was solved by room temperature single crystal XRD (P 21 3, Z=4, a=9,7831(2) Å). This phase does not undergo any structural phase transition down to 6 K nor any kind of long range ordering down to 2 K.

Adições de Ti-C e Cr refinam o grão em nanocompósitos de Nd-Fe-B, aumentando substancialmente o valor de seu campo coercivo Hc. Isto motivou a investigação do efeito da adição de Ti-C e Cr em nanocompósitos de Pr-Fe-B e em outros nanocompóstitos à base de Nd-Fe-B. Fitas metálicas das composições (Pr9,5Fe84,5B6)0,97-x(TiC)0,03Crx (x = 0; 0,0025; 0,005; 0,0075; 0,01) e (Nd9,5Fe84,5B6)0,97-x (TiC)0,03Crx (x = 0,005; 0,01) foram produzidas por resfriamento rápido. Medidas de magnetização em campos magnéticos de até 90 kOe mostraram que os materiais contendo Cr possuem Hc substancialmente maior do que os demais sem. Para um nanocompósito de Pr com 1% Cr, o campo coercivo obtido foi Hc = 12,5 kOe, enquanto que para um nanocompósito de Pr com 0% Cr obtivemos um Hc = 5,1 kOe. O produto energético máximo da amostra com 1% Cr foi de, aproximadamente, 13,6 MGOe, valor este limitado pela remanência. Uma análise do difratograma de raios X mostrou que as fitas à base de Pr-Fe-B com 1%Cr consistem basicamente de uma fase Pr2Fe14B dura e uma fase α-Fe mole. Uma espectroscopia Mössbauer foi realizada em 300 K e mostrou uma redução dos campos hiperfinos devido à adição do Cr. Também foi realizada uma microscopia eletrônica de transmissão na amostra Pr-Fe-B com 1% Cr e os resultados mostraram que o nanocompósito possui um tamanho de grão maior do que o material sem Cr, sendo que a microestrutura majoritária são de grãos constituídos de α-Fe, de tamanho médio de 100 nm, imersos numa matriz de Pr2Fe14B. / Submitted by Marcelo Teixeira (mvteixeira@ucs.br) on 2014-05-30T15:59:14Z No. of bitstreams: 1 Dissertacao Vinicius Cappellano de Franco.pdf: 2554552 bytes, checksum: ca6455aec67ec4bd99efc6bdb3497dc6 (MD5) / Made available in DSpace on 2014-05-30T15:59:14Z (GMT). No. of bitstreams: 1 Dissertacao Vinicius Cappellano de Franco.pdf: 2554552 bytes, checksum: ca6455aec67ec4bd99efc6bdb3497dc6 (MD5) / The addition of both Ti and Cr-C refine the grains in nanocomposites of Nd-Fe-B, increasing substantially the coercive field Hc . This motived our investigation of the effect of the addition of Ti-C and Cr to nanocomposites of Pr-Fe-B and Nd-Fe-B. Ribbons compositions (Pr9,5Fe84,5B6)0,97-x(TiC)0,03Crx (x = 0; 0,0025; 0,005; 0,0075; 0,01) and (Nd9,5Fe84,5B6)0,97-x (TiC)0,03Crx (x = 0,005; 0,01) were produced by melt-spinning. Magnetization measures in fields up to 90 kOe showed that materials containing Cr have substantially higher Hc than the other materials without Cr. For a Pr nanocomposites with 1% Cr, the coercive field Hc was 12.5 kOe, while for a Pr nanocomposites with 0% Cr, Hc = 5.1 kOe. For the sample with 1% Cr, the maximum energy product was approximately 13.6 MGOe, a value limited by the remanence. The X-ray diffractogram analysis showed that the ribbons based on Pr-Fe-B with 1% Cr consist basically of a Pr2Fe14B hard phase and an α-Fe soft phase. Mössbauer spectroscopy was performed at 300 K and showed a reduction of the hyperfine field due to the addition of Cr. Transmission electronic microscopy of the Pr-Fe-B sample with 1% Cr showed that the nanocomposites have a grain size larger than the material without Cr, the microstructure consisting of α Fe grains, with an average size of 100 nm, in a matrix of Pr2Fe14B.

Adições de Ti-C e Cr refinam o grão em nanocompósitos de Nd-Fe-B, aumentando substancialmente o valor de seu campo coercivo Hc. Isto motivou a investigação do efeito da adição de Ti-C e Cr em nanocompósitos de Pr-Fe-B e em outros nanocompóstitos à base de Nd-Fe-B. Fitas metálicas das composições (Pr9,5Fe84,5B6)0,97-x(TiC)0,03Crx (x = 0; 0,0025; 0,005; 0,0075; 0,01) e (Nd9,5Fe84,5B6)0,97-x (TiC)0,03Crx (x = 0,005; 0,01) foram produzidas por resfriamento rápido. Medidas de magnetização em campos magnéticos de até 90 kOe mostraram que os materiais contendo Cr possuem Hc substancialmente maior do que os demais sem. Para um nanocompósito de Pr com 1% Cr, o campo coercivo obtido foi Hc = 12,5 kOe, enquanto que para um nanocompósito de Pr com 0% Cr obtivemos um Hc = 5,1 kOe. O produto energético máximo da amostra com 1% Cr foi de, aproximadamente, 13,6 MGOe, valor este limitado pela remanência. Uma análise do difratograma de raios X mostrou que as fitas à base de Pr-Fe-B com 1%Cr consistem basicamente de uma fase Pr2Fe14B dura e uma fase α-Fe mole. Uma espectroscopia Mössbauer foi realizada em 300 K e mostrou uma redução dos campos hiperfinos devido à adição do Cr. Também foi realizada uma microscopia eletrônica de transmissão na amostra Pr-Fe-B com 1% Cr e os resultados mostraram que o nanocompósito possui um tamanho de grão maior do que o material sem Cr, sendo que a microestrutura majoritária são de grãos constituídos de α-Fe, de tamanho médio de 100 nm, imersos numa matriz de Pr2Fe14B. / The addition of both Ti and Cr-C refine the grains in nanocomposites of Nd-Fe-B, increasing substantially the coercive field Hc . This motived our investigation of the effect of the addition of Ti-C and Cr to nanocomposites of Pr-Fe-B and Nd-Fe-B. Ribbons compositions (Pr9,5Fe84,5B6)0,97-x(TiC)0,03Crx (x = 0; 0,0025; 0,005; 0,0075; 0,01) and (Nd9,5Fe84,5B6)0,97-x (TiC)0,03Crx (x = 0,005; 0,01) were produced by melt-spinning. Magnetization measures in fields up to 90 kOe showed that materials containing Cr have substantially higher Hc than the other materials without Cr. For a Pr nanocomposites with 1% Cr, the coercive field Hc was 12.5 kOe, while for a Pr nanocomposites with 0% Cr, Hc = 5.1 kOe. For the sample with 1% Cr, the maximum energy product was approximately 13.6 MGOe, a value limited by the remanence. The X-ray diffractogram analysis showed that the ribbons based on Pr-Fe-B with 1% Cr consist basically of a Pr2Fe14B hard phase and an α-Fe soft phase. Mössbauer spectroscopy was performed at 300 K and showed a reduction of the hyperfine field due to the addition of Cr. Transmission electronic microscopy of the Pr-Fe-B sample with 1% Cr showed that the nanocomposites have a grain size larger than the material without Cr, the microstructure consisting of α Fe grains, with an average size of 100 nm, in a matrix of Pr2Fe14B.

When a permanent magnet is considered for an application, the quantity that quantifies the usability of that material is the magnetic energy product (BH)max. In today’s world, rare earth transition metal permanent magnets like Nd-Fe-B, Sm-Co possesses the maximum magnetic energy product. But still for the industrial application, the ferrite permanent magnets are the primary choice over these rare transition metal magnets. Thus, in the present context, the magnetic energy product of the low cost ferrite system makes it unsuitable for the high magnetic energy application. In this regard, exchange spring magnets which combine the magnetization of the soft phase and coercivity of the hard magnetic phases become important in enhancing the magnetic energy product of the system. In this thesis, the exchange spring behaviour is reported for the first time in hard/soft oxide nanocomposites by microstructural tailoring of hard Barium Ferrite and soft Nickel Zinc Ferrite particles. We have analyzed the magnetization reversal and its correlation with the coercivity mechanism in the Ni0.8Zn0.2Fe2O4/BaFe12O19 exchange spring systems. Using this exchange spring concept, we could enhance the magnetic energy product in Iron Oxide/ Barium Calcium Ferrite nanocomposites compared to the bare hard ferrite by ~13%. The presence of the exchange interaction in this nanocomposite is confirmed by the Henkel plot. Moreover, a detailed Reitveld study, magnetization loop and corresponding variation of the magnetic energy product, Henkel plot analysis and First Order Reversal Curve analysis are performed on nanocomposites of hard Strontium Ferrite and soft Cobalt Ferrite. We have proved the exchange spring behaviour in this composite. In addition, we could successfully tailor the magnetization behaviour of the soft Cobalt Ferrite- hard Strontium Ferrite nanocomposite from non exchange spring behaviour to exchange spring behaviour, by tuning the size of the soft Cobalt Ferrite in the Cobalt Ferrite/Strontium Ferrite nanocomposite. The relative strength of the interaction governing the magnetization process in the composites has been studied using Henkel plot and First Order Reversal Curve method. The FORC method has been utilized to understand the magnetization reversal behaviour as well as the extent of the irreversible magnetization present in both the nanocomposites, having smaller and larger particle size of the Cobalt Ferrite. It has been found that for the all the studied composites, the pinning is the dominant process for magnetization reversal. The detailed structural analysis using thin film XRD, angle dependent magnetic hysteresis and remanent coercivity measurement, coercivity mechanism by micromagnetic analysis and First Order Reversal Curve analysis are performed for thin films of Strontium Ferrite which are grown on c-plane alumina using Pulsed Laser Deposition (PLD) at two different oxygen partial pressures. The magnetic easy directions of both the films lie in the out of plane direction where as the in plane direction corresponds to the magnetic hard direction. Depending on the oxygen partial pressure during deposition, the magnetization reversal changes from S-W type reversal to Kondorsky kind of reversal. Thus, the growth parameter for the Strontium Ferrite single layer which will be used further as a hard layer for realizing oxide exchange spring in oxide multilayer, is optimized. The details of the magnetic and structural properties are analyzed for Nickel Zinc Ferrite thin film grown on (100) MgAl2O4. We have obtained an epitaxial growth of Nickel Zinc Ferrite by tuning the growth parameters of PLD deposition. The ferromagnetic resonance and the angle dependent hysteresis loop suggest that, the magnetic easy direction for the soft Nickel Zinc Ferrite lie in the film plane whereas the out of plane direction is the magnetic hard direction. Using the growth condition of respective Nickel Zinc Ferrite and Strontium Ferrite, we have realized the exchange spring behaviour for the first time in the trilayer structure of SrFe12O19 (20 nm)/Ni0.8Zn0.2Fe2O4(20 nm)/ SrFe12O19 (20 nm) grown on c-plane alumina (Al2O3) using PLD. The FORC distribution for this trilayer structure shows the single switching behaviour, corresponding to the exchange spring behaviour. The reversible ridge measurement shows that the reversible and the irreversible part of the magnetizations are not coupled with each other.

Magnetostrictive materials belong to an important class of smart magnetic materials which have potential applications as ultrasonic transducers, sensors, actuators, delay lines, energy harvesting devices etc. Although, magnetostrictive property is exhibited by almost all ferro and ferrimagnetic materials, the R-Fe type (R represents rare earth elements) intermetallic compounds display maximum promise owing to the large magnetostriction exhibited by them at ambient temperature. Among the several R-Fe type compounds, Tb-Fe and Sm-Fe alloys are found to exhibit maximum room temperature positive and negative magnetostriction respectively. Recently, Fe-Ga based alloys have gained significant interest as newly emerging magnetostrictive material due to a good combination of magnetic and mechanical properties. These magnetostrictive materials in thin film form are of interests for several researchers both from fundamental and applied perspectives. Currently, many researchers are exploring the possibility of using magnetostrictive thin films in micro- and nano-electromechanical systems (MEMS and NEMS). Three material systems viz. Fe-Ga, Tb-Fe and Sm-Fe in thin film form have been chosen for our investigations. DC magnetron sputtering and e-beam evaporation techniques were used for deposition of these thin films on Si (100) substrates. Several aspects such as evolution of microstructure, film surface morphology, structure and change in film composition with different processing conditions were investigated in detail, as the existing literature could not provide a clear insight. Further, detailed magnetic characterizations of these films were carried out and established a process-structure-property correlation. The thesis is divided into seven chapters. The first chapter presents a brief introduction of magnetostrictive phenomena and the physics behind its origin. A brief history of evolution of magnetostrictive materials with superior properties is also brought out. Introduction to the material systems considered for the present study has also been presented. Discussions on various aspects like crystal structures, magnetic properties, and phase diagrams of these material systems are also included in this chapter. Magnetostriction in thin films and its importance in current technological applications are discussed in short. Further, a summary of existing literature on thin films of these materials has been narrated to highlight the perspective of the work done in subsequent chapters. In addition to this, a clear picture of the grey area for further investigations has been provided. Formulation of detailed scope of work for this study is also provided in this chapter. Details of different experimental techniques used in this study for deposition and characterization of these films are given in chapter 2. In the third chapter of the thesis a detailed study on the structural, microstructural and magnetic properties of Fe-Ga films deposited using dc magnetron sputtering technique are presented. The effect of sputtering parameters such as (i) Ar pressure, (ii) sputtering power, (iii) substrate temperature and (iv) deposition time/film thickness on the magnetic properties of the films are discussed in detail. All the films are found to be polycrystalline in nature with A2 type structure as evidenced from grazing incidence X-ray diffraction (GIXRD) and transmission electron microscope (TEM) studies. Surface morphology of the films are found to be affected with processing conditions considerably. Thermomagnetic behaviour of the films studied using a Superconducting Quantum Interference Device (SQUID) magnetometer under zero field cooled (ZFC) and field cooled (FC) conditions are also presented. The sputtering parameters are also found to influence the magnetic properties of the films through modifications in microstructure, surface morphology and film compositions. Irrespective of the sputtering parameters, room temperature (RT) deposited Fe-Ga films are found to exhibit large magnetic coercively and large saturation magnetic field as compared to the bulk alloy of similar compositions which are not desirable for micromagnetic device applications. A significant improvement in the magnetic properties of the films was obtained in the films deposited at higher substrate temperatures and is correlated with modifications in grain size and film surface roughness. These films are also found to exhibit better magnetostriction than the RT deposited films. Further, the magnetic properties of Fe-Ga films as a function of film thickness in the range 2 – 480 nm are also presented. The nature of variation of coercively with film thickness was correlated with grain size effect and explained successfully with the help of random anisotropy model. In the fourth chapter, studies on the microstructural and magnetic properties of Tb-Fe films were presented. It was reported earlier that TbxFe100-x films exhibit in-plane magnetic anisotropy for the films with x > 42 at.% of Tb and out-of-plane anisotropy for the composition 28 < x < 42. Presence of these anisotropies is technologically important for different applications. We have studied the magnetic properties of Tb-Fe films in these two composition range. TbxFe100-x films with 54  x  59 were prepared using dc magnetron sputtering technique under varying Ar pressure and sputtering power and the details about microstructural and magnetic properties are presented in this chapter. All the films are found to be amorphous in nature. While the composition of the film is found to remain constant with sputtering power, the Fe concentration in the film is found to be depleted with increase in Ar pressure. Magnetic properties are found to change from superparamagnetic to ferromagnetic behaviour with increase in sputtering power. Curie temperature of the films are found to be low (below RT) and is explained based on sperimagnetic ordering of magnetic sub-lattices. The perpendicular magnetic anisotropy (PMA) or out-of-plane anisotropy behaviour of Tb-Fe films were not studied in detail as a function of film thickness. We have successfully prepared TbxFe100-x films with 29  x  40 using e-beam evaporation technique using alloy target composition of TbFe in order to study the PMA behaviour as a function of film thickness. The thickness of the films was varied from 50 to 800 nm. All the films are found to be amorphous and columnar growth structure with fine channels of voids are observed from the TEM studies. Detailed magnetization and thermomagnetic measurements were carried out using SQUID magnetometer at different temperatures. The out-of-plane magnetic coercivity of the films was found to increase with film thickness and then decreases with further increase in thickness. Maximum coercivity of ~ 20 kOe has been obtained for the 400 nm thick film. Magnetic domain patterns were studied using magnetic force microscopy (MFM) technique and the observed magnetic properties are correlated with domain pattern and microstructures. Although there are several reports on device applications of Sm-Fe thin films which exhibit negative magnetostriction, a comprehensive study on the effect of different process parameters on the magnetic properties and its correlation with structure and microstructure is still elusive. Hence, Sm-Fe films were deposited on Si (100) substrate using dc magnetron sputtering technique under varying Ar pressure and sputtering power. Effect of these parameters on the microstructural and magnetic properties of the films was studied in detail and is presented in chapter 5. The curie temperature of the films was found to increase with increase in sputtering power and Ar pressure. This was attributed to increase in film thickness and size of islands (atomic clusters). Coercivity as low as 30 Oe has been achieved in the film deposited at 15 mTorr Ar pressure. The Curie temperature for the films deposited at higher Ar pressure (10 and 15 mTorr) are found to be above RT. Maximum saturation magnetostriction of ~ - 390 -strains has been achieved in the film deposited at 15 mTorr Ar pressure. Rapid thermal processing (RTP) experiments were also carried out to increase the magnetic ordering in the films deposited at low Ar pressure (5 mTorr) by imparting structural ordering. Large improvement in magnetization and Curie temperature of the film was observed after RTA. However, this could be attributed to the formation of nano-crystalline Fe phase as evidenced from the TEM studies and thermomagnetic measurements. An overall summary of the experimental results has been presented in chapter 6. The scope of work for further study in future has also been highlighted in chapter 7.

Spintronics (spin based electronics) is a relatively new topic of research which is important both from the fundamental and technological point of view. In conventional electronics charge of the electron is manipulated and controlled to realize electronic devices. Spintronics uses charge as well as the spin degree of freedom of electrons, which is completely ignored in the charge based devices. This new device concept brings in a whole new set of device possibilities with potential advantages like higher speed, greater efficiency, non-volatility, reduced power consumption etc. The first realization of the spintronic device happened in 1989, owing to the discovery of the Giant Magneto-resistive (GMR) structure showing a large resistance change by the application of an external magnetic field. Nobel Prize in Physics is awarded for this discovery in 2007. In less than ten years, such devices moved from the lab to commercial devices, as read head sensors in hard disc drives. This new sensor led to an unprecedented yearly growth in the area l density of bits in a magnetic disc drive. Since 2005, another spintronic device known as Magnetic Tunnel Junction (MTJ) which shows a better performance replaced the existing GMR structures in the read heads. Another device which can potentially replace Si based Dynamic Random Access Memory (DRAM) is Magneto-resistive Random Access Memory (MRAM). Being magnetic it is non-volatile, which means not only it retains its memory with the power turned off but also there is no constant power required for frequent refreshing. This can save a lot of power(~ 10-15 Watts in a DRAM), which is quite significant amount for any portable device which runs under battery. Prototype of a commercial MRAM is also made during 2004-2005 by Infineon and Freescale Semiconductors. Recent development has shown switching of magnetic moment by spin-polarised currents (known as spin transfer torque), electric fields, and photonic fields. Instead of Oersted field switching in the conventional MRAM devices, spin torque effect can also be used to switch a magnetic element more efficiently. Recently Spin-Torque MRAM has gained lot of interest due to it’s less power consumption during the writing process. A continuous research effort is going on in realizing other proposed spintronic devices, such as Spin Torque Oscillator, Spin Field Effect Transistor , Race Track Memory etc. which are yet to get realized or yet to make their entry in the commercial devices. Spintronics can be divided in to two broad subfields viz.(1) Semiconductor Spintronics and (2) Metallic Spintronics. Most of the devices belong to the second class whereas the former one is rich in fundamental science and not yet cleared its path towards the world of application. Any spintronic device requires ferromagnetic material which is generally the source of spin polarized electrons. For semiconductor spintronic devices, the main obstacle is the non-existence of the ferromagnetic semiconductor above room temperature (RT). So the development in this direction is very much dependent on the material science research and discovery of novel material systems. Almost a decade back, Dilute Magnetic Semiconductors (DMS) are proposed to behaving RT ferromagnetism. As a result an intense theoretical and experimental research is being carried out since then on these materials. Still a general consensus is lacking both in terms of theory as well as experiment. There are many methodologies and thin film deposition protocols have been followed by different research groups to realize spintronic device concepts. The deposition techniques such as magnetron sputtering, molecular beam epitaxy have been found very efficient for growing metallic spintronic devices. For semiconductor spintronics especially in the area of Dilute Magnetic Semiconductors (DMS) pulsed laser ablation is also considered to be a viable technique. Even though pulsed laser ablation is a very powerful technique to prepare stoichiometric multi-component oxide films, it’s viability for the growth of metallic films and multilayer is considered to be limited. In this regard, we have used pulsed laser ablation to prepare pure and Co doped ZnO films, to examine the magnetic and magneto-transport behavior of these oxides. In addition extensive work has been carried out to optimize and reproducibly prepare metallic multilayer by Pulsed Laser Deposition to realize Spin Valve (SV) effect, which proves the viability of this technique for making metallic multilayer. This thesis deals with the study of Pulsed Laser Deposition(PLD) deposited DMSs and metallic SVs. The thesis is organized into seven chapters as described below: • Chapter:1 This chapter gives an introduction to Spintronics and the different device structures. It is followed by a brief description of the motivation of the present work. Since magnetism is at the heart of the spintronics, next we attempt to introduce some of the basic concepts in magnetism, which are related to the topics discussed in the following chapters. We discuss about various exchange interactions responsible for the long range ferromagnetic ordering below Curie temperature in different compounds. Other magnetic properties are also discussed. Then another important phenomenon called magnetic anisotropy is brought in. We discuss the origin of different types of anisotropy in materials. These anisotropies are also responsible for magnetic domain formation. Then a description of the different types of domain walls are introduced. Unlike conventional electronics, spintronics deals with spin polarized current. A short description of spin polarization from the band picture and concept of half-metal is introduced. The next part (Section-I) of this chapter gives an overview of the challenges in semiconductor spintronics. The spin injection efficiency from a ferromagnetic metal to a semiconductor is found to be poor. This problem is attributed to the conductivity mismatch at the interface. DMS materials can be potential candidates in order to solve this problem. Ferromagnetism in these proposed materials cannot be explained in terms of the standard exchange mechanisms. A model was first proposed for the hole doped system based on Zener model. A more apt model for the n-doped high dielectric materials is then proposed based on Bound Magnetic Polarons (BMP). These models for the unusual ferromagnetism are briefly discussed. Although ferromagnetism is observed by different groups, often questions are raised about the intrinsic origin of this behavior and the topic is still under debate. In this study we have tried to correlate the magnetic property with the transport property as the transport properties are generally not affected much by the presence of external impurities and probes the intrinsic property of the material. Transport and the magneto-transport in disordered materials in general are discussed. A specific model proposed for degenerate semiconductors, which is used for fitting our experimental data is explained. As the ferromagnetism in these materials are generally found to be related to the defects, different types of possible defects are described. Section-II deals with the metallic SV devices. In the history of spintronics, this is one of the most basic and most studied structures, but still having a lot of interest both fundamentally and technologically. A brief history of this discovery and a chronological progress in the device structure is discussed. Our work focuses on the metallic spin valve (SV) structures. Different types of SVs and their properties are explained. In a SV structure one of the ferromagnets (FM) is pinned using an adjuscent antiferromagnetic layer by an effect called exchange bias. A brief description of exchange bias and the effects of different parameters is given. This is followed by a discussion about the theory of GMR which deals with the spin dependent scattering at the bulk and at the interfaces, their relative contributions, effect of the band matching etc. A simple resistor model is used to explain the qualitative behavior of these SVs. The chapter is concluded with a brief summery and applications. • Chapter:2 This chapter provides a brief description of some of the experimental apparatus that are used to perform various experiments. The chapter is organized according to the general functionality of the techniques. This includes different thin film deposition techniques which are used depending on the requirements and also for comparing the properties of the samples, grown by different techniques. Structural, spectroscopic, magnetic and different microscopy techniques which are extensively used throughout, are discussed and their working principles are explained. This work also involves nano/microstructuring of devices. Mainly two structuring techniques are used viz. e-beam lithography and optical lithography by laser writer. In this section we will be discussing about these two techniques and other associated techniques like lift-off, etching etc. Effect of different parameters on the device structures are highlighted. • Chapter:3 Chapter-3 deals with the synthesis and characterization of the pure and 5% Co doped ZnO bulk samples. First a brief introduction about the ZnO crystal structure, band structure and other properties are given followed by the synthesis technique followed in our study. Synthesis is done by low temeperature in organic co-precipitation method. This liquid phase synthesis gives better homogeniety. As-grown sample is also sintered at a higher temperature. Structural study confirms the proper synthesis of the intended compound. Spectroscopic as well as magnetic study of the bulk doped sample indicates the presence of Co nano clusters in the low temperature synthesized sample, whereas after sintering indication of Co2+ is observed which reflects in the magnetic property as well. These samples are used as target material for laser ablation. • Chapter:4 Chapter-4 presents the results of the pure and Co doped ZnO thin film samples. Thin films are grown by PLD method on r-plane Sapphire substrates. Details of the growth technique and the deposition parameters are explained. Our result shows that 5% Co doped ZnO thin film is ferromagnetic in nature as expected in a DMS material, although the film is grown using a paramagnetic target. We also report that pure ZnO grown in an oxygen deficient condition giving ferromagnetic behavior. Not only that, the obtained saturation moment is much higher compared to the Co doped sample. We have demonstrated that the FM can be tuned by tuning the oxygen content and FM disappears when the film is annealed in an oxygen environment .But for the Co doped sample magnetic property could not be tuned much as Co doping stabilizes the surface states. To exclude the possibilities of the extrinsic origin we have done a detailed magneto-transport study for both doped and undoped films. For ZnO, we have shown a one to one correlation of the magnetic and magneto-transport data which further supports the fact that the obtained magnetic behavior is intrinsic. Fitting of the magnetorsistance (MR) data for the pure and Co doped ZnO samples is done using a semi-empirical formula, consisting of both positive and negative MR terms originally proposed for degenerate semiconductors .Excellent agreement of the experimental data is found with the formula. For pure ZnO sample we have extracted the mobility, carrier concentration etc .by Hall measurement. The fabrication steps of Hall bar sample which involves optical lithography and ion beam etching are discussed. 3D e-e interaction induced transport mechanism is found to be dominant in case of oxygen deficient pure ZnO. • Chapter:5 Chapter-5 demonstrates the tuning of band gap of ZnO by alloying with MgO. By changing the ZnO:MgO ratio in PLD grown films, we could tune the band gap over a wide range. Composition alanalysis is done by Rutherford Back-Scattering. Structural and spectroscopic studies are carried out, which shows tuning of band gap upon alloying with MgO. We could tune ZnO band gap from 3.3eV to 3.92eV by30% MgO alloying, while retaining the Wurtzite crystal structure. • Chapter:6 Chapter-6 demonstrates the metallic Pseudo Spin Valve (PSV) structures grown by sputtering and by PLD. Main focus of this chapter is to show that, PLD can be aviable technique for making metallic PSV and Spin Valve (SV) structures. This is almost an unexplored technique for growing metallic thin film SVs, as it is evident in the literature. NiFe and Co are used as the soft and hard FM layers respectively, Au and Cu are used as the spacer layer. FeMn is used for pinning the Co layer in case of the SV structures. The first section describes the properties of these materials and then substrate preparation, deposition parameters etc. are explained in details. Properties of sputter deposited PSV structures are also described. Thickness variation of different layers, double PSV structure and angular variation of the MR properties are presented. Generally two measurement geometries are followed for the SV measurements viz.(1) Current In Plane (CIP) and (2) Current Perpendicular to Plane(CPP). We have carried out MR studies in both the measurement geometries. Measurement in CPP geometry is much more involved than CIP and need structuring with multiple lithography steps. CPP measurement geometry scheme and the process steps are discussed. For this measurement a special ac bridge technique is followed which is also discussed. In the next part we have demonstrated PSV and SV structures, grown, using PLD in an Ultra High Vacuum (UHV) system. Not only that, we have obtained a CIPMR as high as 3.3%. PLD is generally thought to be a technique for oxide deposition and metallic multilayers are not deposited due to particulate formation, high enegy of the adatom species which can lead to inter-mixing at the interface etc. But in this study we have shown that by properly tuning the deposition parameters, it is possible to grow SVs using PLD. We have found the roughness of the PLD grown films are much lower compared to the sputtered films. For top SV structures we have obtained exchange bias even in the absence of applied field during deposition. This effect is observed by performing magnetic and magneto-resistance measurements. Effect of different layer thicknesses, field annealing etc. are discussed. Two different spacer layers are used and their properties are compared. We have found that the interface engineered structures are giving highest MR among the different samples. Then a conclusion of our study is presented followed by a discussion on the difficulties and challenges faced for optimizing the PLD grown SVs. • Chapter:7 Finally, in Chapter-7, various results are summarized and a broad outlook is given. Perspectives for the continuation of the present work is also given.

Carbon nanotubes (CNTs) have been recognized as potential candidates for mainstream device fabrication and technologies. CNTs have become a topic of interest worldwide due to their unique mechanical and electrical properties. In addition, CNTs possess high aspect ratio and low density that make them an important material for various technological applications. The field of carbon nanotube devices is rapidly evolving and attempts have been made to use CNTs in the fabrication of devices like field emitters, gas sensors, flow meters, batteries, CNT-field effect transistors etc. These molecular nanostructures are proposed to be an efficient hydrogen storage material. CNT cylindrical membranes are reported to be used as filters for the elimination of multiple components of heavy hydrocarbons from petroleum and for the filtration of bacterial contaminants of size less than 25 nm from water. Recently, CNT bundles have been proposed to be a good material for low-temperature sensing. CNTs have also been considered as promising filler materials due to extraordinary characteristics mentioned above. Fabrication of nanocomposites using CNTs as reinforcing material has completely renewed the research interest in polymer composites. The conductive and absorptive properties of insulating polymer doped with conducting filler are sensitive to the exposure to gas vapors and hence they can be used in monitoring various gases. The application of fiibre reinforced polymer composites in aeronautic industry are well known due to their high mechanical strength and light weight. Also, the conductive composite materials can be used for electromagnetic shielding. Desired properties in CNT-composites can be attained by adding small amount of CNTs in comparison to traditional filler materials. Due to high aspect ratio and low density of CNTs, percolation threshold in CNT-polymer composites can be achieved at 0.1 vol % as compared to ~16 vol. % in case of carbon particles. The research work ׽0.1 vol. %, as compared to reported in this thesis includes the preparation of multiwall carbon nanotube (MWNTs) and MWNT-polystyrene composites, experimental investigations on low temperature charge transport, and magnetic properties in these systems. This thesis contains 7 chapters. Chapter 1 provides an overview of CNTs and CNT-polymer composites. This chapter briefly describes the methods for synthesizing CNTs and fabricating CNT-polymer composites, charge transport mechanisms in CNTs and composites, and their magnetic properties as well. Chapter 2 deals with the concise introduction of various structural characterization tools and experimental techniques employed in the present work. An adequate knowledge of the strengths and limitations of experimental equipment can help in gathering necessary information about the sample, which helps in studying and interpreting its physical properties correctly. Chapter 3 describes the synthesis of MWNTs and their use as filler material for the fabrication of composites with polystyrene (PS). The characterization results of as-prepared MWNT and composites show that MWNTs possess high aspect ratio (~4000), and are well dispersed in the composite samples (thickness ~50-70 µm). The composite samples are prepared by varying the MWNT concentration from 0.1 to 15 wt %. The as¬fabricated composites are electrically conductive and expected to display novel magnetic properties since MWNTs are embedded with iron (Fe) nanoparticles. Chapter 4 presents the study of charge transport properties of aligned and random MWNTs in the temperature range 300-1.4 K. The low temperature electrical conductivity follows the weak localization (WL) and electron-electron (e-e) interaction model in both samples. The dominance of WL and e-e interaction is further verified by magneto-conductance (MC) measurements in the perpendicular magnetic field up to 11 T at low temperatures. The MC data of these samples consists of both positive and negative contributions, which originates from WL (at lower fields and higher temperatures) and e-e interaction (at higher fields and lower temperatures). Chapter 5 contains the results of charge transport studies in MWNT-PS composite near the percolation threshold (~0.4 wt %) at low temperatures down to 1.4 K. Metallic-like transport behavior is observed in composite sample of 0.4 wt %, which is quite unusual. In general, the usual activated transport is observed for systems near the percolation threshold. The unusual weak temperature dependence of conductivity in MWNT-PS sample at percolation threshold is further verified from the negligible frequency dependence of conductivity, in the temperature range from 300 to 5 K. Chapter 6 accounts on the experimental results of magnetization studies of MWNTs and MWNT-PS composites. The observation of maxima in coercivity and squareness ratio at 1 wt % of Fe-MWNT in a polymer matrix show the dominance of dipolar interactions among the encapsulated Fe-nanorods within MWNTs. The hysteresis loop of 0.1 wt % sample shows anomalous narrowing at low temperatures, which is due to significant contribution from shape anisotropy of Fe-nanorods. Chapter 7 presents brief summary and future perspectives of the research work reported in the thesis.

Both cuprates and manganites belong to the transition metal oxides. The physics of these compounds is characterized by a dualism of local electron interaction and itinerant charge motion. In the present work, several key issues of metallic cuprates and manganites are addressed on a theoretical level, while close connection to recent experimental work is kept. The work is based on the notion of spin and orbital liquids, representing elegant tools to handle the strongly correlated nature of the metallic state in an efficient and transparent manner. A concise introduction to the physics of cuprates and manganites as well as to the methods employed is presented at the beginning of the work. In a subsequent part, we show that the peculiar magnetic response of metallic cuprates upon impurity doping can be successfully explained within a spin-liquid picture. The remainder of the work is devoted to the metallic state of manganites. Elaborating on the notion of an orbital liquid, the interplay of electron correlations, orbital degeneracy, and double exchange is studied. Thereby, the unconventionally large incoherent optical spectrum of metallic manganites and the pronounced softening of the magnon spectrum observed in experiment can be explained. Finally, a theory of the metal-insulator transition of manganites is presented which is based upon the newly introduced notion of orbital polarons. In general, we believe the close agreement of our results with experiment to strongly support the validity of our approach, giving new insight into the spectacular and sometimes as-tonishing physics of transition metal oxides.

Low-dimensional (D) materials, such as graphene, transition metal dichalcogenides and chalcogenide nanowires, are attractive for spintronics and valleytronics due to their unique physical and chemical properties resulting from low dimensionality. Emerging concepts of spintronics devices will greatly benefit from using 1D and 2D materials, which opens up new ways to manipulate spin. A majority of 1D and 2D materials is non-magnetic, thus their applications in spintronics are limited. The exploration, design and synthesis of new 1D and 2D materials with intrinsic magnetism and high spin-polarization remains a challenge. In addition, the valley polarization and spin-valley coupling properties of 2D materials have attracted great attention for valleytronics, which not only manipulates the extra degree of freedom of electrons in the momentum space of crystals but also proposes a new way to store the information. The computational investigation of magnetic and electronic properties of low-dimensional materials is the subject of this thesis. We have systematically investigated geometric, electronic, magnetic and valleytronic properties of several 2D and 1D materials by using the density functional theory. These investigations not only theoretically show rich and adjustable magnetic properties of...

Verbindungen mit Spinellstruktur im quasiternären System &amp;quot;LiO0.5-MnOx-FeOx&amp;quot; finden industriell als keramische Werkstoffe in der Elektrotechnik und Elektronik Verwendung. So werden Lithium-Mangan-Spinelloxide der Form Li1+xMn2-xO4 (x =&amp;gt; 0) als Kathodenmaterial für wiederaufladbare Lithiumbatterien untersucht. Sowohl Lithium- als auch Manganferrit finden Einsatz als steuerbare Komponenten in der Mikrowellentechnik und Manganferrite als Leistungsüberträger in Spulen und Transformatoren der Hochfrequenztechnik. Für einen solchen technischen Einsatz sind die Kenntnisse der Bedingungen für die Synthese phasenreiner Spinelle und deren Struktur unerlässlich. Die Darstellung der Spinelle erfolgte im Rahmen dieser Arbeit aus gefriergetrockneten Lithium-Mangan-Eisenformiaten. Diese Precursoren zeichnen sich durch hohe Reaktivität und exakte Metallionenstöchiometrie aus. Der Zersetzungsablauf von gefriergetrockneten Li-Mn(II)-Fe(III)-Formiaten unter Argon wurde mittels thermischer Analyse, gekoppelt mit der Massenspektroskopie, sowie durch Röntgenpulveraufnahmen der Zwischenprodukte untersucht. Aus den vorzersetzten Precursoren gewünschter Zusammensetzung wurden unter kontrollierten Temperatur- und Sauerstoffpartialdruckbedingungen einphasige Spinelloxide dargestellt. Die so erhaltenen Verbindungen mit Spinellstruktur wurden mittels Röntgenbeugung und Strukturverfeinerung sowie XANES- und Mößbauerspektroskopie und magnetischen Messungen untersucht. Aus der Kombination dieser Methoden konnten Schlussfolgerungen bezüglich der Struktur, Kationenverteilung und Eigenschaften der jeweiligen Spinelle gewonnen werden. Im Mittelpunkt der Arbeit steht die in der Literatur nicht beschriebene Mischkristallreihe LixMn1+xFe2?2xO4, die Mn(II) und Mn(III) oder Mn(III) und Mn(IV) für x &amp;lt; 0.5 oder x &amp;gt; 0.5 enthält. Mit zunehmendem x-Wert vergrößert sich der Anteil von Lithiumionen auf Tetraeder-plätzen. Bei einem Wert x = 4/7 erreicht dieser Anteil 100%. Unter Einbeziehung der Ergebnisse der Mößbaueruntersuchungen ergeben sich für die Spinellverbindungen mit x = 2/7, 3/7 und 4/7 die folgenden Kationenverteilungen: (Li1.04Mn2+2.81-[delta]Fe3+3.15Mn3+[delta])A[Li0.96Fe3+6.85Mn3+6-[delta]Mn2+0.19+[delta]]BO28 (Li2.37Mn2+1.0-*Fe3+2.98Mn3+0.65+*)A[Li0.63Fe3+5.02Mn3+8.35-*Mn2+*]BO28 (Li4.0Fe3+2.37Mn3+0.63)A[Fe3+3.63Mn3+9.37Mn4+1.0]BO28. Eine theoretisch vorhersehbare Zunahme der Sättigungsmagnetisierung bei kleinen x-Werten wird durch Abnahme der kooperativen Kopplungseffekte mit Abnahme des Eisengehaltes nicht beobachtet. Zusammenfassend kann festgehalten werden, dass die Darstellung phasenreiner Spinelloxide aus den vorzersetzten gefriergetrockneten Li-Mn-Fe-Formiaten im gesamten Bereich zwischen den bekannten quasibinären Spinellverbindungen MnFe2O4, Li0.5Fe2.5O4, LiMn2O4 und Li4/3Mn5/3O4 im quaternären System Li-Mn-Fe-O unter jeweils definierten pO2/T-Bedingungen möglich ist. Die Synthesetemperaturen sind teilweise um 100°C bis 200°C niedriger als bei vergleichbaren Proben aus den Festkörpereaktionen. Manganreiche Spinelle außerhalb dieses Bereiches konnten nicht synthetisiert werden.