Taking into account the technological demand for the controlled preparation of atomically precise graphene nanoribbons (GNRs) with well-defined properties, the present thesis is focused on the investigation of the role of the underlying metal substrate in the process of building GNRs using bottom-up strategy and on the changes in the electronic structure of GNRs induced by the GNR-metal interaction. The combination of surface sensitive synchrotron-radiation-based spectroscopic techniques and scanning tunneling microscopy with in situ sample preparation allowed to trace evolution of the structural and electronic properties of the investigated systems. Significant impact of the substrate activity on the growth dynamics of armchair GNRs of width N = 7 (7-AGNRs) prepared on inert Au(111) and active Cu(111) was demonstrated. It was shown that unlike inert Au(111) substrate, the mechanism of GNRs formation on Ag(111) and Cu(111) includes the formation of organometallic intermediates based on the carbon-metal-carbon bonds. Experiments performed on Cu(111) and Cu(110), showed that a change of the balance between molecular diffusion and intermolecular interaction significantly affects the on-surface reaction mechanism making it impossible to grow GNRs on Cu(110). It was demonstrated that deposition of metals on spatially aligned GNRs prepared on stepped Au(788) substrate allows to investigate GNR-metal interaction using angle-resolved photoelectron spectroscopy. In particular intercalation of one monolayer of copper beneath 7-AGNRs leads to significant electron injection into the nanoribbons, indicating that charge doping by metal contacts must be taken into account when designing GNR/electrode systems. Alloying of intercalated copper with gold substrate upon post-annealing at 200°C leads to a recovery of the initial position of GNR-related bands with respect to the Fermi level, thus proving tunability of the induced n-doping. Contrary, changes in the electronic structure of 7-AGNRs induced by the deposition of Li are not reversible.  It is demonstrated that via lithium doping 7-AGNRs can be transformed from a semiconductor into a metal state due to the partial filling of the conduction band. The band gap of Li-doped GNRs is reduced and the effective mass of the conduction band carriers is increased.

The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been studied to determine an optimum material combination for minimizing the leakage current, while maximizing the breakdown field. The leakage current and breakdown characteristics were observed to have a strong dependence on the top electrode material. Devices with Al top electrodes exhibited significantly higher breakdown voltages compared to devices with Au, Ni, Cu and Ag electrodes. Introducing an Al diffusion barrier dramatically increased the breakdown field and reduced the leakage current for capacitors with Ag, Au and Cu top electrodes. The electrical characteristics were found to relate well to material properties, of the contacting metals, such as ionization potential and diffusion coefficient.

The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been studied to determine an optimum material combination for minimizing the leakage current, while maximizing the breakdown field. The leakage current and breakdown characteristics were observed to have a strong dependence on the top electrode material. Devices with Al top electrodes exhibited significantly higher breakdown voltages compared to devices with Au, Ni, Cu and Ag electrodes. Introducing an Al diffusion barrier dramatically increased the breakdown field and reduced the leakage current for capacitors with Ag, Au and Cu top electrodes. The electrical characteristics were found to relate well to material properties, of the contacting metals, such as ionization potential and diffusion coefficient.

Neuf ans sont passés depuis la découverte du graphène, tous très dense de travaux de recherche et publications que, petit à petit, ont mieux illuminé les propriétés de ce matériau extraordinaire. Avec une meilleure compréhension de ses meilleures qualités, une idée plus précise des applications que mieux pourront profiter de son use a été défini. Dispositifs à haute fréquence, comme mélangeurs et amplificateurs de puissance, et l'électronique Flexible et Transparent sont les domaines les plus prometteurs. Dans ces domaines une grande attention est dévouée à deux sujets : la réduction des dimensions des transistors à base de graphène, pour réduire le temps de propagation des porteurs de charge et atteindre des pourcentages de transport balistique toujours plus élevés ; et l'optimisation des parasites de contact. Tout les deux sont très bénéfiques pou la maximisation des figures de mérite du dispositif. En cette thèse, deux modèles ont été développés pour aborder ces sujets : le premier est dédié aux transistors quasi-balistiques de graphène de grande surface comme aussi aux transistors graphène nano-ruban. Ceci démontre la corrélation entre le transport balistique et diffusive et la longueur du dispositif, et extrait les courants DC grand signal et les transconductances. Le second reproduit la conduction à haute fréquence à travers le graphène et son impédance parasite de contact. Le dernier modèle a aussi motivé la conception et fabrication d'un test bed RF sur une technologie dédié sur plastique, fait qui permet la caractérisation RF de l'impédance de contact et de l'impédance spécifique d'interface avec du graphène monocouche accru par CVD.

This thesis presents the RF and mechanical design of a metal-to-metal contact RF MEMS switch. Metal-to-metal contact RF MEMS switches are especially preferred in low frequency bands where capacitive switches suffer from isolation due to the limited reactance. Frequency band of operation of the designed switch is from DC to beyond X-band. Measured insertion loss of the structure is less than 0.2 dB, return loss is better than 30 dB, and isolation is better than 20 dB up to 20 GHz. Isolation is greater than 25 dB below 10 GHz. Hence, for wideband applications, this switch offers very low loss and high isolation. Time domain measurement is necessary for the investigation of the dynamic behavior of the devices, determination of the &lsquo / pull in&rsquo / and &lsquo / pull out&rsquo / voltages of the membranes, switching time and power handling of the devices. Also, failure and degradation of the switches can be monitored using the time domain setup. For these purposes a time domain setup is constructed. Moreover, failure mechanisms of the RF MEMS devices are investigated and a power electronic circuitry is constructed for the biasing of RF MEMS switches. Advantage of the biasing circuitry over the direct DC biasing is the multi-shape, high voltage output waveform capability. Lifetimes of the RF MEMS devices are investigated under different bias configurations. Finally, for measurement of complicated RF MEMS structures composed of large number of switches, a bias waveform distribution network is constructed where conventional systems are not adequate because of the high voltage levels. By this way, the necessary instrumentation is completed for controlling a large scale RF MEMS system.

No description available.

The continuous migration to smaller feature sizes puts high demands on materials and technologies for future ultra-large-scale integrated circuits. Particularly, the copper-based interconnect system will reach fundamental limits soon. Their outstanding properties make metallic carbon nanotubes (CNTs) an ideal material to partially replace copper in future interconnect architectures. Here, a low contact resistance to existing metal lines is crucial. The present thesis contributes to the theory and numerical description of electronic transport in metallic CNTs with metal contacts. Different theoretical approaches are applied to various contact models and electrode materials (Al, Cu, Pd, Ag, Pt, Au) are compared. Ballistic transport calculations are based on the non-equilibrium Greens function formalism combined with tight-binding (TB), extended Hückel theory (EHT) and density functional theory (DFT). Simplified contact models allow a qualitative investigation of both the influence of geometry and CNT length, and the strength and extent of the contact on the transport properties. In addition, such simple contact models are used to compare the influence of different electronic structure methods on transport. It is found that the semiempirical TB and EHT are inadequate to quantitatively reproduce the DFT-based results. Based on this observation, an improved set of Hückel parameters is developed, which remedies this insufficiency. A systematic investigation of different contact materials is carried out using well defined atomistic metal-CNT-metal structures, optimized in a systematic way. Analytical models for the CNT-metal interaction are proposed. Based on that, electronic transport calculations are carried out, which can be extended to large systems by applying the computationally cheap improved EHT. The metal-CNT-metal systems can then be ranked by average conductance: Ag ≤ Au < Cu < Pt ≤ Pd < Al. This corresponds qualitatively with calculated contact distances, binding energies and work functions of CNTs and metals. To gain a deeper understanding of the transport properties, the electronic structure of the metal-CNT-metal systems and their respective parts is analyzed in detail. Here, the energy resolved local density of states is a valuable tool to investigate the CNT-metal interaction and its influences on the transport. / Die kontinuierliche Verkleinerung der Strukturgrößen stellt hohe Anforderungen an Materialen und Technologien zukünftiger hochintegrierter Schaltkreise. Insbesondere die Leistungsfähigkeit kupferbasierte Leitbahnsystem wird bald an fundamentale Grenzen stoßen. Aufgrund ihrer hervorragenden Eigenschaften könnten metallische Kohlenstoffnanoröhren (engl. Carbon Nanotubes, CNTs) Kupfer in zukünftigen Leitbahnsystemen teilweise ersetzen. Dabei ist ein geringer Kontaktwiderstand mit vorhandenen Leitbahnen von entscheidender Bedeutung. Die vorliegende Arbeit liefert grundlegende Beiträge zur Theorie und zur numerischen Beschreibung elektronischer Transporteigenschaften metallischer CNTs mit Metallkontakten. Dazu werden verschiedene theoretische Ansätze auf diverse Kontaktmodelle angewandt und eine Auswahl von Elektrodenmaterialen (Al, Cu, Pd, Ag, Pt, Au) verglichen. Die Beschreibung ballistischen Elektronentransports erfolgt mittels des Formalismus der Nichtgleichgewichts-Green-Funktionen in Kombination mit Tight-Binding (TB), erweiterter Hückel-Theorie (EHT) und Dichtefunktionaltheorie (DFT). Vereinfachte Kontaktmodelle dienen der qualitativen Untersuchung des Einflusses von Geometrie und Länge der Nanoröhren, sowie von Stärke und Ausdehnung des Kontaktes. Darüber hinaus erlauben solch einfache Modelle mit geringem numerischen Aufwand den Einfluss verschiedener Elektronenstrukturmethoden zu untersuchen. Es zeigt sich, dass die semiempirischen Methoden TB und EHT nicht in der Lage sind die Ergebnisse der DFT quantitativ zu reproduzieren. Ausgehend von diesen Ergebnissen wird ein verbesserter Satz von Hückel-Parametern generiert, der diesen Mangel behebt. Die Untersuchung verschiedener Kontaktmaterialien erfolgt an wohldefinierten atomistischen Metall-CNT-Metall-Strukturen, welche systematisch optimiert werden. Analytische Modelle zur Beschreibung der CNT-Metall-Wechselwirkung werden vorgeschlagen. Darauf aufbauende Berechnungen der elektronischen Transporteigenschaften, können mit Hilfe der verbesserten EHT auf große Systeme ausgedehnt werden. Die Ergebnisse ermöglichen eine Reihung der Metall-CNT-Metall-Systeme hinsichtlich ihrer Leitfähigkeit: Ag ≤ Au < Cu < Pt ≤ Pd < Al. Dies korrespondiert qualitativ mit berechneten Kontaktabständen, Bindungsenergien und Austrittarbeiten der CNTs und Metalle. Zum tieferen Verständnis der Transporteigenschaften erfolgt eine detaillierte Analyse der elektronischen Struktur der Metall-CNT-Metall-Systeme und ihrer Teilsysteme. Dabei erweist sich die energieaufgelöste lokale Zustandsdichte als nützliches Werkzeug zur Visulisierung und zur Charakterisierung der Wechselwirkung zwischen CNT und Metall sowie deren Einfluss auf den Transport.