With the constant scaling of semiconductor devices, reliability of these devices is a huge concern. One of the biggest reliability issues is a phenomenon known as electromigration (EM) [1] [2]. Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms [27]. The damage induced by electromigration appears as the formation of voids and hillocks, resulting in electrical discontinuity. Based on previous Electromigration research [15], I have created a tool chain that identifies where electromigration is likely to occur in large-scale integrated circuits. Using this tool chain, it is possible to identify the mean-time to failure (MTTF) of several common and high priority circuits such as complex adders and memories. Furthermore, this tool chain allows designers to isolate weak-points in these circuits to improve the overall MTTF of the circuit. The result is that with a few simple changes, circuits can be redesigned to increase the MTTF, at minimal cost to the system.

An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The free spaces between the metal lines were refilled with a spin-on process of a low-k material. The persistence of barrier materials and copper against HF solutions, the gap fill behavior of the used spin on glass on different structure sizes and the main challenges which have to solve in the future are shown in this study.

An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The free spaces between the metal lines were refilled with a spin-on process of a low-k material. The persistence of barrier materials and copper against HF solutions, the gap fill behavior of the used spin on glass on different structure sizes and the main challenges which have to solve in the future are shown in this study.