No presente trabalho, foram investigados os efeitos de tratamentos térmicos em vapor d’água, em óxido nítrico e em hidrogênio nas propriedades físico-químicas e elétricas de filmes dielétricos crescidos termicamente e/ou depositadas por sputtering sobre lâminas de carbeto de silício. A caracterização foi realizada antes e após tratamentos térmicos nesses ambientes através de técnicas que utilizam feixes de íons. Em alguns casos, a caracterização elétrica também foi realizada. A investigação da incorporação e distribuição em profundidade de hidrogênio e oxigênio após tratamentos de SiO2/SiC e SiO2/Si em vapor d’água mostrou que há diferenças marcantes na interação da água com as duas estruturas. Observou-se maior incorporação de oxigênio no filme pré-existente de SiO2 sobre o SiC do que em SiO2/Si, evidenciando uma maior concentração de defeitos nos filmes sobre SiC. A incorporação de hidrogênio também foi maior nas estruturas SiO2/SiC, sendo observada em todas as regiões do filme de SiO2 crescido sobre SiC. Nos filmes crescidos sobre Si, no entanto, a incorporação deuse, principalmente, na região da superfície do filme de óxido. A interação do vapor d’água com estruturas SiO2/SiC e SiO2/Si com filmes depositados por sputtering também foi investigada. Foi constatada uma incorporação distinta da observada para essas estruturas quando seus óxidos foram crescidos termicamente. A incorporação de hidrogênio do vapor d’água em estruturas com filmes de SiO2 depositados por sputtering sobre SiC e sobre Si ocorre, principalmente, na interface SiO2/substrato. A distribuição em profundidade de oxigênio após a exposição a vapor d'água a 800°C revelou que ele é incorporado em toda a espessura dos óxidos depositados sobre ambos os substratos, evidenciando a alta mobilidade dos átomos de oxigênio nesses filmes de óxido. O crescimento térmico antes da deposição de SiO2 sobre o SiC levou à incorporação de menores quantidades de hidrogênio, quando comparadas com as estruturas relativas a filmes apenas depositados. No entanto, à medida que o tempo de oxidação térmica foi aumentado, observou-se maior incorporação de hidrogênio, o que foi atribuído à formação de defeitos no filme de óxido susceptíveis à interação com o mesmo. O crescimento térmico por um tempo curto seguido pela deposição de SiO2 e o crescimento térmico não seguido de outro tratamento levaram a menores incorporações de D do que a deposição não seguida de outro tratamento, o que pode ser correlacionado com as melhores características elétricas observadas nessas estruturas. Outro tema abordado foi a incorporação de hidrogênio através de tratamento térmico em 2H2, com e sem a presença de um eletrodo de platina, em filmes dielétricos crescidos em atmosfera de O2, NO e via tratamento térmico sequencial nesses dois gases. Quando o crescimento térmico em O2 foi seguido de tratamento em NO, foi observada uma forte troca isotópica entre o oxigênio da fase gasosa e o oxigênio do filme de SiO2, evidenciando a alta mobilidade dos átomos de oxigênio nesses filmes. A incorporação de hidrogênio mostrou-se fortemente dependente da rota utilizada no crescimento do filme dielétrico. Sem a presença do eletrodo de platina, o crescimento do filme dielétrico direto em NO foi a rota que apresentou a maior incorporação de hidrogênio. A presença de platina, por sua vez, promoveu um aumento na incorporação de hidrogênio nos filmes dielétricos obtidos através das três rotas de crescimento. Em todos os casos, observou-se que a incorporação de hidrogênio ocorre, principalmente, na região da interface entre o filme dielétrico e o SiC. A incorporação de maiores quantidades de hidrogênio foi associada com a presença de N previamente incorporado. A atmosfera reativa utilizada no crescimento térmico dos filmes dielétricos também mostrou influência nas características elétricas das estruturas analisadas. A caracterização por curvas C-V mostrou um aumento no deslocamento da tensão de banda plana após tratamentos térmicos em 2H2, indicando o aumento e/ou formação de carga positiva. Por fim, a interação de vapor d'água em estruturas de SiO2/SiC e de SiO2/Si com filmes crescidos termicamente e tratadas em NO foi investigada. Observou-se que as estruturas SiO2/SiC que foram submetidas a tratamentos térmicos em NO apresentaram menor incorporação de hidrogênio, devido à exposição a vapor d'água. Esse efeito também foi observado em estruturas SiO2/SiC quando o pós-tratamento em NO foi substituído por um póstratamento em argônio na mesma temperatura e tempo, indicando que a temperatura de tratamento é a responsável pelas menores incorporações de hidrogênio, não a reatividade do gás empregado. / In the present work, effects of thermal treatments in water vapor, in nitric oxide, and in hydrogen in the physicochemical and in the electrical properties of dielectric films thermally grown and/or deposited by sputtering on silicon carbide were investigated. The characterization was performed using ion beam analyses before and after thermal treatments in these atmospheres. In some cases, the electrical characterization was also performed. The investigation of the incorporation and depth distribution of hydrogen and oxygen after annealing of SiO2/SiC and SiO2/Si in water vapor evidenced that there are striking differences regarding water interaction with these two structures. It was observed larger oxygen incorporation in the pre-existent SiO2 film on SiC than in the SiO2/Si, which evidences higher concentration of defects in oxide films on SiC. The incorporation of hydrogen was also larger in SiO2/SiC structures, being observed in all regions of the dielectric film. In oxide films grown on Si, however, the incorporation occurred mainly in the surface region of the oxide. The interaction of water vapor with SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, was also investigated. A distinct incorporation was observed when comparing results from structures whose oxides were thermally grown. The incorporation of hydrogen from water vapor in structures in which SiO2 films were deposited by sputtering on SiC and on Si, occurred mainly in the SiO2/substrate interface. The oxygen depth distribution after exposure to water vapor at 800°C revealed that it was incorporated in all depths of the oxides that were deposited on both substrates, evidencing the high mobility of oxygen atoms in these oxide films. The thermal growth prior to SiO2 deposition on SiC led to the incorporation of smaller amounts of hydrogen, compared with structures with films that were only deposited. Nevertheless, as the thermal oxidation time increases, a larger incorporation of hydrogen was observed, which was attributed to the formation of defects in the oxide film that are more likely to interact with hydrogen. The thermal growth for short time followed by the deposition of SiO2 and the thermal growth not followed by any other treatment led to lower amounts of hydrogen, when compared with the deposition not followed by another treatment, which can be correlated with the improvement in the electrical characteristics observed in these structures. Another subject investigated was the incorporation of hydrogen by 2H2 anneal, with and without the presence of platinum, in dielectric films thermally grown in O2, NO, and in sequential thermal treatments in these two atmospheres. In the case of thermal growth in O2 followed by NO anneal, it was observed a notable isotopic exchange between oxygen from the gas phase and oxygen from the SiO2 film, evidencing that oxygen atoms are highly mobile in these films. The incorporation of hydrogen was showed to be highly dependent on the route employed in the dielectric film growth, being the direct growth of dielectric films in NO the one that presented larger incorporation without the presence of Pt electrode. The presence of this metal increases the incorporation of hydrogen in all dielectric films. In all cases, it was observed that the incorporation of hydrogen occurred mainly in the interface region between the dielectric film and the SiC. The incorporation of larger amounts of hydrogen was associated with the presence of N that was previously incorporated. The reactive atmosphere employed in the thermal growth of dielectric films also was observed to affect electrical characteristics in analyzed structures. The characterization by C-V measurements evidenced an increase in the flatband voltage shift after annealing in 2H2, indicating the increase and/or the formation of positive charge. Finally, the interaction of water vapor in SiO2/SiC and SiO2/Si structures with dielectric films thermally grown and annealed in NO was investigated. It was observed that SiO2/SiC structures that were submitted to NO anneal presented less hydrogen incorporation due to exposure to water vapor. This behavior was also observed in SiO2/SiC structures when the NO anneal was replaced by an annealing in Ar at the same temperature and time, indicating that the temperature of the annealing was responsible by the less incorporation of hydrogen instead of the reactivity of the gas employed.

Department of Chemistry / PhD (Chemistry) / This thesis is concerned with the computational study of naphthylisoquinoline alkaloids having antimalarial properties. The study was considered interesting because of the importance of gathering information on antimalarial molecules and because these molecules had not yet been studied computationally. The alkaloids considered in this study had been isolated from tropical lianas belonging to the Dioncophyllaceae and Ancistrodaceae families. They comprise alkaloids with both monomeric and dimeric structures. The monomeric structures consist of one unit and the dimeric ones of two units, with each unit containing a naphthalene moiety and an isoquinoline moiety. 33 monomeric molecules were studied, which represent a large portion of all the monomeric naphthylisoquinoline alkaloids isolated so far. Two dimeric molecules with antimalarial activity were investigated, namely, jozimine A2 and mbandakamine A. A third dimeric molecule, with a structure close to that of jozimine A2 but different activity (michellamine A, anti-HIV) was also calculated for comparison purposes. This work utilised electronic structures methods and involved the conformational study of all the molecules selected to identify the stabilising factors in vacuo and in solution. Two levels of theory (HF/ 6-31G (d,p) and DFT/B3LYP/ 6-31+G(d,p)) were utilised to compare their performance for compounds of this type, also in view of a future study extending to other compounds of the same class. The molecules were firstly studied in vacuo and secondly in three different solvents – chloroform, acetonitrile and water – characterized by different polarities and different H-bonding abilities. Quantum chemical calculations in solution were carried out using the Polarisable Continuum Model (PCM). The main stabilizing factors are the presence and types of intramolecular hydrogen bonds (IHBs), which are the dominant factors, and also the mutual orientation of the moieties. The possible IHBs comprise OH⋯O (or OH⋯N and NH⋯O for mbandakamine A) and other H-bond types interactions such as OH⋯ and CH⋯O (or CH⋯O and CH⋯N for mbandakamine A). The moieties prefer to be perpendicular one to another, which is a common tendency of aromatic vii systems. In monomeric structures, there may be only one OH⋯O and possibly also one of each of the other two types of IHBs interactions. In dimeric structures, there may be up to four (five in mbandakamine A) OH⋯O IHBs simultaneously and also other H-bond type interactions. The results provide a comprehensive picture of the molecular properties of these compounds, such as conformational preferences, dipole moments, HOMO-LUMO energy gaps, harmonic vibrational frequencies, solvent effect and influence of the solvent on molecular properties which respond to polarisation by the solvent. Altogether, these results may contribute to a better understanding of their biological activity and to the design of molecular structures with enhanced biological activity. This is the reason of focusing the efforts on the investigation of chemical and physical properties of these alkaloids molecules. / NRF

No description available.

The binding of molecular hydrogen to a metal center leads to the elongation of the H−H bond and subsequently to its cleavage along the reaction coordinate for the oxidative addition of H2. There has been considerable interest in the study of the activation of dihydrogen and map out the reaction coordinate for the homolysis of H2 on a metal center. A large number of H2 complexes reported to date possess H−H distances ranging from 0.8 to 1.0 Å. A relatively fewer examples of elongated dihydrogen complexes wherein the H−H distances fall in the range of 1.0 to 1.5 Å, are known. Study of the elongated dihydrogen complexes is of great significance because of its relevance in important catalytic processes such as hydrogenation, hydrogenolysis, and hydroformylation. Objectives The objectives of this work are as follows: (a) Synthesis and characterization of elongated dihydrogen complexes with chelating phosphine coligands by varying the electron donor ability. (b) Trap the various intermediate states in the process of oxidative addition of H2 to a metal center. (c) Map the reaction coordinate for the oxidative addition for the oxidative addition of H2 to a metal center. Results We have synthesized and characterized two new elongated dihydrogen complexes cis-[Ir(H)(η2-S2CH)(η2-H2)(PR3)2][BF4] (PR3 = PCy3, PPh3) wherein hydrogen atom undergoes site exchange between the H2 and the hydride sites. The dynamics of the exchange was studied using NMR spectroscopy. In addition, a series of ruthenium dihydrogen complexes of the type trans-[Ru(Cl)(η2-H2)(PP)][BF4] (PP = 1,2- Synopsis bis(diarylphosphino)ethane) has been synthesized and characterized wherein the aryl group is a benzyl moiety with a substituent (p-fluoro, H, m-methyl, p-methyl, p-isopropyl); in this series of complexes, a small increment in the electron donor ability (decrease in Hammett substituent constants) of the chelating phosphine ligand resulted in an elongation of the H−H bond by a small, yet significant amount. We also synthesized a series of 16-electron dicationic dihydrogen complexes bearing elongated dihydrogen ligand. In addition, we prepared a series of dihydrogen complexes of the type [RuCp/Cp*(PP)(η2-H2)][OTf] (PP = 1,2-bis(diarylphosphino)ethane, 1,2-bis(diarylphosphino)methane, 1,2-bis(dialkylphosphino)methane) bearing elongated H2 ligand (dHH = 1.0 to 1.17 Å); in this series of complexes as well, we found that the H−H bond distances increased as the donor ability of the chelating phosphines increased in small increments, along the reaction coordinate for the oxidative addition of H2 to a metal center. This investigation therefore, has established a very nice correlation between the H−H bond lengths and the Hammett substitutent constants (donor properties) resulting in the construction of dihydrogen complexes along the reaction coordinate for the oxidative addition of H2 to a metal center.